Abstract: A control device (10) according to an embodiment includes an initial write instruction unit (30) and a data write instruction unit (40). The initial write instruction unit (30), before accepting an information write request to a storage device (20) including a plurality of resistance change storage elements each of which stores information by using a difference of the resistance state, outputs to the storage device (20) a write instruction to bring the storage element into a first resistance state. The data write instruction unit (40), upon accepting a write request, outputs to the storage device (20) a write instruction to bring the storage element into the first resistance state or a second resistance state according to the write request.

Abstract: A leakage current of a MOS transistor that performs writing is reduced. The resistance change memory includes a memory cell, a write drive unit, a write control unit, and a well potential adjustment unit. The memory cell includes a resistance change element. The write drive unit applies a write voltage to the memory cell to perform writing of data. The write control unit outputs a write control signal for controlling the writing to the write drive unit. The well potential adjustment unit adjusts a well potential of a well region in which an element constituting the write drive unit is arranged according to the write voltage at time of the writing.

Abstract: A logic simulation device according to an aspect of the present disclosure includes an operation model of a resistance-change memory element. The resistance-change memory element is provided between two terminals. The operation model includes a register section for holding data, a truth table, and a determining section. The truth table defines a relationship between signal values of the two terminals, and data writing to the register section and data reading from the register section. The determining section performs determination about the data writing and the data reading on the basis of signal values inputted to the two terminals and the truth table.

Abstract: A memory system according to an aspect of the present disclosure includes a soft error generator that generates write data or read data considering a probability error by using a random number.

Abstract: A program causes an information processing apparatus to perform processing to receive a plurality of data used to determine an accident situation, perform display control to display a determination screen on a display device on the basis of the plurality of data, the determination screen including a first display area in which a plurality of determination items and determination results for determining the accident situation are displayed and a second display area in which proof data is displayed in determination items having the proof data corresponding to the determination results, receive an instruction based on a user operation performed on a prescribed determination result inside the first display area, and perform display control to display proof data for the prescribed determination result inside the second display area according to the instruction.

Abstract: Provided is a storage apparatus that reduces the power needed to write corrected data back to a memory. The storage apparatus includes a memory and a write control section. The memory stores data in units of multiple cells each representing a predetermined value. The write control section receives write-back data having a specific value in a position corresponding to at least one of the multiple cells, as well as a write-back command regarding the specific value. The write control section performs control to write the specific value only to the cell corresponding to the position indicative of the specific value in the write-back data.

Abstract: A standard potential used for reading is set flexibly according to the state of a storage device. A data memory cell group stores data. A reference memory cell group stores a plurality of reference potentials. A standard potential generating section selects a prescribed number of reference potentials from among the plurality of reference potentials stored in the reference memory cell group and generates the standard potential. A reference potential selection control section controls the selection by the standard potential generating section according to prescribed conditions. A sense amplifier amplifies data read out from the data memory cell group, by using the standard potential as a standard.

Abstract: The reference cells used for reading out data are tested efficiently so as to improve the reliability of the readout data. A memory circuit includes multiple memory arrays, a selection circuit, and a sense amplifier. The selection circuit selects values output from memory cells in any of the multiple memory arrays so as to supply a first value and a second value. A sense amplifier has a first input terminal and a second input terminal. The sense amplifier amplifies and outputs the first value supplied to the first input terminal in reference to the second value supplied to the second input terminal.

Abstract: The reference cells used for reading out data are tested efficiently so as to improve the reliability of the readout data. A memory circuit includes multiple memory arrays, a selection circuit, and a sense amplifier. The selection circuit selects values output from memory cells in any of the multiple memory arrays so as to supply a first value and a second value. A sense amplifier has a first input terminal and a second input terminal. The sense amplifier amplifies and outputs the first value supplied to the first input terminal in reference to the second value supplied to the second input terminal.

Abstract: A semiconductor storage device is provided, the semiconductor storage device including: a resistance element configured to generate a reference potential to be supplied to a sense amplifier; and a switch unit having at least two states including a state in which the reference potential to be supplied to the sense amplifier is generated by injection of a current to the resistance element, and a state in which a reference potential generated outside the semiconductor storage device is supplied to the sense amplifier.

Abstract: To provide a sense amplifier which is capable of implementing a large capacity, a high speed, and an increased data rate of a semiconductor storage device. A sense amplifier is provided, the sense amplifier including: first and second inverters including switches configured to control an activation state and an inactivation state, and having inputs and outputs cross-coupled to each other, respectively; and first and second switches configured to switch between connection and disconnection of each of the cross-coupled first and second inverters with respect to an input from a storage element.

Abstract: To provide a novel and improved semiconductor storage device which is capable of implementing a large capacity by enabling normal reading of a value from a storage element. A semiconductor storage device is provided, the semiconductor storage device including: a memory element; a reference element in a first resistance state for generating a reference potential for identifying a value held in the memory element; and a reference element in a second resistance state in which a resistance value of the reference element is higher than that in the first resistance state for generating the reference potential, in which when generating the reference potential, the number of reference elements in the first resistance state is larger than the number of reference elements in the second resistance state.

Abstract: A paper straw 10 is comprised of an elongated paper tube 30 and a bending structure 20 composed in the tube 30. The bending structure 20 is comprised of a plural stiff part 21 and a plural soft part 22 alternately turn around thereof and make a tubular form. The paper tube is made from paper or the material made from plant. The stiff part 21 may have a large thickness and the soft part 22 may have a smaller thickness.

Abstract: To provide a sense amplifier which is capable of implementing a large capacity, a high speed, and an increased data rate of a semiconductor storage device. A sense amplifier is provided, the sense amplifier including: first and second inverters including switches configured to control an activation state and an inactivation state, and having inputs and outputs cross-coupled to each other, respectively; and first and second switches configured to switch between connection and disconnection of each of the cross-coupled first and second inverters with respect to an input from a storage element.

Abstract: To provide a semiconductor storage device which is capable of setting a reference potential with a high reliability. A semiconductor storage device is provided, the semiconductor storage device including: a resistance element configured to generate a reference potential to be supplied to a sense amplifier; and a switch unit having at least two states including a state in which the reference potential to be supplied to the sense amplifier is generated by injection of a current to the resistance element, and a state in which a reference potential generated outside the semiconductor storage device is supplied to the sense amplifier.

Abstract: To provide a novel and improved semiconductor storage device which is capable of implementing a large capacity by enabling normal reading of a value from a storage element. A semiconductor storage device is provided, the semiconductor storage device including: a memory element; a reference element in a first resistance state for generating a reference potential for identifying a value held in the memory element; and a reference element in a second resistance state in which a resistance value of the reference element is higher than that in the first resistance state for generating the reference potential, in which when generating the reference potential, the number of reference elements in the first resistance state is larger than the number of reference elements in the second resistance state.

Abstract: A magnetic recording medium includes a nonmagnetic substrate and at least a magnetic layer, a protective layer, and a lubricating layer provided on the nonmagnetic substrate. The magnetic recording medium is characterized in that the lubricating layer is formed of a lubricating agent represented by general formulas (1), (2) or (3), in which substituents R1, R2, R3, and R4 in the lubricating agent represent organic groups, at least one of the substituents R1 and R2 at the end part of the lubricating agent and the substituents R3 and R4 contain a plurality of functional groups, and the shortest distance between the functional groups is a distance of three or more atoms, preferably five atoms. The magnetic recording medium may be used for a heat assisted recording method in which the temperature of the magnetic layer reaches 150° C. to 200° C.

Abstract: A heat-bonding apparatus and method of manufacturing a heat-bonded product not allowing the temperature of the object to be heat-bonded to overshoot greatly from a specified target temperature, and setting the temperature of the object to the target temperature in a shorter time and with higher efficiency and accuracy than the conventional when heat-bonding in vacuum. A heat-bonding apparatus having a vacuum chamber for housing an object to be heat-bonded and a buffer part, a heater for the buffer part in contact with the object in the chamber, a cooler for the buffer part, a sensor for detecting temperature of the object heated through the buffer part and a controller for controlling the temperature of the object to be the target temperature by adjusting heat discharge from the buffer part with the cooler based on the detected temperature of the object.

Abstract: [Object of the Invention] To decrease the load applied to a spine so as to prevent and treat lumbago, when carrying various shapes of goods with hands. [Solution] A load carrying supporter used for carrying goods by hands, comprising an attachment attached to a worker's body and a load supporter fixed to the attachment. The attachment attached around the worker's waist, and the load supporter has a high frictional resistance material facing outward from the worker's body. Most of the load is lead to the waist and the distance between the loading point and the spine becomes small. Therefore the pressure and the bending moment on the spine become very small.

Abstract: A heat-bonding apparatus and method of manufacturing a heat-bonded product without overheating during cooling thereof after the completion of the heat-bonding, where the object can be cooled in a shorter time than the conventional when the heat-bonding is performed in a vacuum. A heat-bonding apparatus having a vacuum chamber for housing an object to be heat-bonded and a buffer part, a heater for applying heat to the buffer part placed into contact with the object, an object temperature sensor for detecting a temperature of the object heated through the buffer part, a buffer temperature sensor for detecting a temperature of the buffer part, a vacuum breaker for breaking the vacuum, and a controller for operating the vacuum breaker to break the vacuum when a temperature difference between a temperature detected by the object temperature sensor and a temperature detected by the buffer temperature sensor falls within a range of specified temperature difference.