Abstract: To provide a thermal processing apparatus where a projection area perpendicular to the axis of a sealing structure and attachment structure of heat radiation heater is decreased and a chamber volume is decreased. The apparatus has a chamber for accommodating a workpiece of a thermal processing object, the chamber having a partition wall for partitioning inside from outside of the chamber, a heat radiation heater disposed penetrating the partition wall, wherein the heater has a ring seal arranged on an outer peripheral surface of the extension section, and hermetically sealing the chamber, and a heat blocking plate arranged between the heat radiation unit and the ring seal in the axial direction of the glass tube, for blocking heat radiated from the heat radiation unit to the ring seal, the heat blocking plate having an inner peripheral surface fitting along the extension section.

Abstract: A heat-bonding apparatus and method of manufacturing a heat-bonded product without overheating during cooling thereof after the completion of the heat-bonding, where the object can be cooled in a shorter time than the conventional when the heat-bonding is performed in a vacuum. A heat-bonding apparatus having a vacuum chamber for housing an object to be heat-bonded and a buffer part, a heater for applying heat to the buffer part placed into contact with the object, an object temperature sensor for detecting a temperature of the object heated through the buffer part, a buffer temperature sensor for detecting a temperature of the buffer part, a vacuum breaker for breaking the vacuum, and a controller for operating the vacuum breaker to break the vacuum when a temperature difference between a temperature detected by the object temperature sensor and a temperature detected by the buffer temperature sensor falls within a range of specified temperature difference.

Abstract: A heat-bonding apparatus and method of manufacturing a heat-bonded product not allowing the temperature of the object to be heat-bonded to overshoot greatly from a specified target temperature suitable for heat-bonding, and setting the temperature of the object to the target temperature in a shorter time and with higher efficiency and accuracy than the conventional when heat-bonding in vacuum. A heat-bonding apparatus having a vacuum chamber for housing an object to be heat-bonded and a buffer part, a heater for applying heat to the buffer part in contact with the object in the chamber, a cooler for discharging heat of the buffer part, a sensor for detecting temperature of the object heated through the buffer part and a controller for controlling the temperature of the object to be the target temperature by adjusting heat discharge from the buffer part with the cooler based on the detected temperature of the object.

Abstract: An excellent soldering apparatus and manufacturing method of soldered product are provided where a workpiece can be efficiently soldered in a short cycle time. The soldering apparatus includes a thermal radiation heater and two coolers for cooling the workpiece which sandwich the heater therebetween. The coolers are movable between a standby position and a cooling position and form a recessed portion in which the heater is placed. The coolers move to the standby position where the coolers are separated from the workpiece and stand by such that the heater is in a state of protruding from the recessed portion while the heater heats the workpiece. The coolers can move from the standby position to the cooling position to cool the workpiece.

Abstract: To provide a thermal processing apparatus where a projection area perpendicular to the axis of a sealing structure and attachment structure of heat radiation heater is decreased and a chamber volume is decreased. The apparatus has a chamber for accommodating a workpiece of a thermal processing object, the chamber having a partition wall for partitioning inside from outside of the chamber, a heat radiation heater disposed penetrating the partition wall, wherein the heater has a ring seal arranged on an outer peripheral surface of the extension section, and hermetically sealing the chamber, and a heat blocking plate arranged between the heat radiation unit and the ring seal in the axial direction of the glass tube, for blocking heat radiated from the heat radiation unit to the ring seal, the heat blocking plate having an inner peripheral surface fitting along the extension section.

Abstract: An excellent soldering apparatus and manufacturing method of soldered product are provided where a workpiece can be efficiently soldered in a short cycle time. The soldering apparatus includes a thermal radiation heater and two coolers for cooling the workpiece which sandwich the heater therebetween. The coolers are movable between a standby position and a cooling position and form a recessed portion in which the heater is placed. The coolers move to the standby position where the coolers are separated from the workpiece and stand by such that the heater is in a state of protruding from the recessed portion while the heater heats the workpiece. The coolers can move from the standby position to the cooling position to cool the workpiece.

Abstract: Disclosed herein is a storage control device that includes a temperature sensor, temperature information selection section, refresh command reception section and trigger issuance frequency setting section.

Abstract: The present disclosure provides a semiconductor device including: a semiconductor identifier holding portion configured to hold a semiconductor identifier for identifying a semiconductor device; and a control portion configured such that upon elapse of a predetermined time period following receipt of an externally input instruction to hold the semiconductor identifier, the control portion issues an instruction to the semiconductor device immediately downstream of the semiconductor device to hold a semiconductor identifier of the immediately downstream semiconductor device and that during the time period between the point in time at which the externally input instruction is received and the point in time at which the instruction is issued to the immediately downstream semiconductor device to hold the semiconductor identifier thereof, the control portion causes the semiconductor identifier holding portion to hold the externally input identifier.

Abstract: Disclosed here is a semiconductor memory device including: a semiconductor substrate; a plurality of pads formed on the semiconductor substrate and configured to permit data input and output; and a memory core block and an I/O block integrated on the semiconductor substrate. The data items are input and output to and from the plurality of pads at twice a maximum access rate in effect.

Abstract: The present disclosure provides a semiconductor device including: a semiconductor identifier holding portion configured to hold a semiconductor identifier for identifying a semiconductor device; and a control portion configured such that upon elapse of a predetermined time period following receipt of an externally input instruction to hold the semiconductor identifier, the control portion issues an instruction to the semiconductor device immediately downstream of the semiconductor device to hold a semiconductor identifier of the immediately downstream semiconductor device and that during the time period between the point in time at which the externally input instruction is received and the point in time at which the instruction is issued to the immediately downstream semiconductor device to hold the semiconductor identifier thereof, the control portion causes the semiconductor identifier holding portion to hold the externally input identifier.

Abstract: Disclosed herein is a storage control device that includes a temperature sensor, temperature information selection section, refresh command reception section and trigger issuance frequency setting section.

Abstract: Disclosed here is a semiconductor memory device including: a semiconductor substrate; a plurality of pads formed on the semiconductor substrate and configured to permit data input and output; and a memory core block and an I/O block integrated on the semiconductor substrate. The data items are input and output to and from the plurality of pads at twice a maximum access rate in effect.

Abstract: A magnetic recording medium includes a nonmagnetic substrate and at least a magnetic layer, a protective layer, and a lubricating layer provided on the nonmagnetic substrate. The magnetic recording medium is characterized in that the lubricating layer is formed of a lubricating agent represented by general formulas (1), (2) or (3), in which substituents R1, R2, R3, and R4 in the lubricating agent represent organic groups, at least one of the substituents R1 and R2 at the end part of the lubricating agent and the substituents R3 and R4 contain a plurality of functional groups, and the shortest distance between the functional groups is a distance of three or more atoms, preferably five atoms. The magnetic recording medium may be used for a heat assisted recording method in which the temperature of the magnetic layer reaches 150° C. to 200° C.

Abstract: The present invention provides a switching element that has a stable bistable characteristic and a high transition voltage and demonstrates excellent cyclic performance. The switching element has two stable resistance values with respect to the voltage applied between electrodes, wherein a first electrode layer, an organic bistable material layer, and a second electrode layer are successively formed as thin films on a substrate and the organic bistable material constituting the organic bistable material layer is a quinomethane-based compound or a monoquinomethane-based compound. A metal constituting the second electrode layer is diffused into the organic bistable material layer. It is preferred that the second electrode layer be formed by vapor deposition and the temperature of the substrate during the vapor deposition be 30-150° C.

Abstract: A switching device is discloses that exhibits two stable resistance values to a voltage applied between electrodes. The switching device comprises thin films of a first electrode layer, an organic bistable material layer and a second electrode layer sequentially formed on a substrate, and the organic bistable material is a specified quinone compound.

Abstract: A switching device contains a thin film containing an organic material disposed between at least two electrodes, and the organic material is, for example, a triphenylamine compound represented by the general formula (I):

Abstract: A switching device is discloses that exhibits two stable resistance values to a voltage applied between electrodes. The switching device comprises thin films of a first electrode layer, an organic bistable material layer and a second electrode layer sequentially formed on a substrate, and the organic bistable material is a specified quinone compound.

Abstract: The present invention provides a switching element that has a stable bistable characteristic and a high transition voltage and demonstrates excellent cyclic performance. The switching element has two stable resistance values with respect to the voltage applied between electrodes, wherein a first electrode layer, an organic bistable material layer, and a second electrode layer are successively formed as thin films on a substrate and the organic bistable material constituting the organic bistable material layer is a quinomethane-based compound or a monoquinomethane-based compound. A metal constituting the second electrode layer is diffused into the organic bistable material layer. It is preferred that the second electrode layer be formed by vapor deposition and the temperature of the substrate during the vapor deposition be 30-150° C.

Abstract: A compound useful for a positive charge type electrophotographic photoreceptor with high sensitivity for copiers and printers by using such a novel organic material as a charge transport substance in a photosensitive layer and an electrophotographic apparatus using the same. The compound has a structure represented by the following general formula (I). (In the general formula (I), R1, R2, R3, and R4 each is an alkyl group or the like; R5 and R6 each-is an aryl group or the like; and Z represents a structure having the following general formula (F-A), (F-B) or (F-C). (In the formulae, R7 and R8 each is an optionally substituted alkyl group; m and n each represents an integer of from 0 to 2; and X is a sulfur atom or an oxygen atom.).

Abstract: The present invention provides a switching element in which the compositional deviation of material is suppressed and that attains uniform bistability performance and is suitable for mass production. In a switching element comprising an organic bistable material, which exhibits two stable states in resistance under applied voltage, arranged between at least two electrodes, the organic bistable material comprises at least a compound having an electron-donating functional group and an electron-accepting functional group in each molecule. It is preferred that, for example, an aminoimidazole type compound, a pyridone type compound, a stilbene type compound or a butadiene type compound be used as the above compound.