Abstract: The present invention provides a CVD apparatus and a CVD method for use in forming an Al/Cu multilayered film. The Al/Cu multilayered film is formed in the CVD apparatus comprising a chamber for placing a semiconductor wafer W, a susceptor for mounting the semiconductor wafer W thereon, an Al raw material supply system for introducing a gasified Al raw material into the chamber and a Cu raw material supply system for introducing a gasified Cu raw material into the chamber. The Al/Cu multilayered film is formed by repeating a series of steps consisting of introducing the Al raw material gas into the chamber, depositing the Al film on the semiconductor wafer W by a CVD method, followed by generating a plasma in the chamber in which the Cu raw material gas has been introduced and depositing the Cu film on the semiconductor wafer W by a CVD method. The Al/Cu multilayered film thus obtained is subjected to a heating treatment (annealing), thereby forming a desired Al/Cu multilayered film.

Abstract: A CVD film forming apparatus includes a susceptor, provided in a process chamber, having a surface of an area smaller than that of a wafer. A process gas is supplied to a top surface of the wafer mounted on the susceptor, thereby forming a CVD film on the top surface. A film formation preventing gas is supplied in a direction from the rear surface of the wafer toward a peripheral edge thereof at a flow rate which prevents the process gas from flowing to the rear surface of the wafer.

Abstract: The present invention provides a CVD apparatus and a CVD method for use in forming an Al/Cu multilayered film. The Al/Cu multilayered film is formed in the CVD apparatus comprising a chamber for placing a semiconductor wafer W, a susceptor for mounting the semiconductor wafer W thereon, an Al raw material supply system for introducing a gasified Al raw material into the chamber and a Cu raw material supply system for introducing a gasified Cu raw material into the chamber. The Al/Cu multilayered film is formed by repeating a series of steps consisting of introducing the Al raw material gas into the chamber, depositing the Al film on the semiconductor wafer W by a CVD method, followed by generating a plasma in the chamber in which the Cu raw material gas has been introduced and depositing the Cu film on the semiconductor wafer W by a CVD method. The Al/Cu multilayered film thus obtained is subjected to a heating treatment (annealing), thereby forming a desired Al/Cu multilayered film.

Abstract: A CVD film forming apparatus includes a susceptor, provided in a process chamber, having a surface of an area smaller than that of a wafer. A process gas is supplied to a top surface of the wafer mounted on the susceptor, thereby forming a CVD film on the top surface. A film formation preventing gas is supplied in a direction from the rear surface of the wafer toward a peripheral edge thereof at a flow rate which prevents the process gas from flowing to the rear surface of the wafer.

Abstract: A hinge mechanism for use with a cover for opening and closing a hole. The mechanism is designed to support the cover and enable the cover to rotate through an angle greater than 90.degree. between an opened position and a closed position. The mechanism comprises an axle to be secured to the chamber, a support member having a first part rotatably supported by the axle and a second part spaced from the first part, a rotary member to be secured to the cover, the rotary member rotatably supported by the second part of the support member and capable of rotating around the support member when the cover is rotated, and a rotation-transmitting mechanism supported by the support member, connecting the rotary member to the axle to allow the support member to rotate in a first direction around the axle when the rotary member is rotated in a second direction opposite to the first direction.

Abstract: A cassette carrier unit for carrying a cassette, in which a plurality of substrates are housed, into and out of cassette chambers of the multi-chamber system including a hand on which the cassette is mounted. A multi-joined arm for supports the swingable hand, and a base supports the multi-joined swingable arm. The multi-joined arm includes a first shaft member rotatably attached to the hand, a second shaft member rotatably attached to the base, a third shaft member rotated associating with the first shaft member but in a direction reverse to the direction in which the first shaft member is rotated, and a fourth shaft member rotatably attached to the base and to which rotation drive force is transmitted. A first arm is rotatably attached to the first shaft member at the front end thereof and to the second shaft member at the base end thereof.

Abstract: A transfer apparatus for transferring a semiconductor wafer has a base provided with a rotary driving source, and four arms having the same length. A first inner arm has an end fixed to the rotary driving shaft, and the other end fixed to a first coupling shaft. A second inner arm has an end supported by the base such that it can rotate about a pivotal point, and the other end is rotatably connected to a second coupling shaft. A transmission mechanism is provided between the first and second coupling shafts. A first outer arm has an end rotatably connected to the first coupling shaft, and a second outer arm has an end fixed to the second coupling shaft. The other ends of the first and second outer arms are rotatably connected to a supporting plate having a wafer-holding portion. The four arms are arranged so as to have a link structure in the form of a parallelogram, which enables linear transfer of a wafer.