Abstract: According to one embodiment, a reticle chuck cleaner for cleaning a reticle chuck of an EUV exposure apparatus includes a substrate having a shape to be carried to the reticle chuck of the EUV exposure apparatus, and an adhesive formed on one of the main surfaces of the substrate.

Abstract: There is provided a reticle chuck cleaner A for cleaning a reticle chuck of an apparatus, as a reticle chuck cleaner that allows easy cleaning of a reticle chuck in a vacuum chamber of an apparatus without exposing the chamber to the atmosphere and contributes to improvement of the operating ratio of the apparatus, including: an adhesive layer 1 to be adhered to a chuck region of the reticle chuck; a support layer 2 laminated on the adhesive layer 1; and a substrate 3 having a shape capable of being carried to the reticle chuck, the support layer 2 and the substrate 3 being partially bonded together in an adhesive region 41 of a partial adhesive layer 4.

Abstract: According to one embodiment, an imprint mask includes a quartz plate. The quartz plate has a plurality of concave sections formed in part of an upper surface on the quartz plate, and impurities are contained in a portion between the concave sections in the quartz plate.

Abstract: According to one embodiment, a template substrate includes a substrate and a mask. The substrate includes a mesa region formed in a central portion of an upper surface of the substrate. The mesa region is configured to protrude more than a region of the substrate around the mesa region. An impurity is introduced into an upper layer portion of a partial region of a peripheral portion of the mesa region. The mask film is provided on the upper surface of the substrate.

Abstract: According to one embodiment, a reticle chuck cleaner for cleaning a reticle chuck of an EUV exposure apparatus includes a substrate having a shape to be carried to the reticle chuck of the EUV exposure apparatus, and an adhesive formed on one of the main surfaces of the substrate.

Abstract: According to one embodiment, a reticle chuck cleaner for cleaning a reticle chuck of an EUV exposure apparatus includes a substrate having a shape to be carried to the reticle chuck of the EUV exposure apparatus, and an adhesive formed on one of the main surfaces of the substrate.

Abstract: There is provided a reticle chuck cleaner A for cleaning a reticle chuck of an apparatus, as a reticle chuck cleaner that allows easy cleaning of a reticle chuck in a vacuum chamber of an apparatus without exposing the chamber to the atmosphere and contributes to improvement of the operating ratio of the apparatus, including: an adhesive layer 1 to be adhered to a chuck region of the reticle chuck; a support layer 2 laminated on the adhesive layer 1; and a substrate 3 having a shape capable of being carried to the reticle chuck, the support layer 2 and the substrate 3 being partially bonded together in an adhesive region 41 of a partial adhesive layer 4.

Abstract: According to one embodiment, an imprint mask includes a quartz plate. The quartz plate has a plurality of concave sections formed in part of an upper surface on the quartz plate, and impurities are contained in a portion between the concave sections in the quartz plate.

Abstract: An exposure mask includes: an insulative substrate; a light reflecting film provided on the substrate; a light absorbing film provided on the light reflecting film and forming a pattern in a center region on the substrate; and an interconnect provided on the substrate, the light reflecting film and the light absorbing film not being provided in a frame-shaped region surrounding the center region, and the interconnect being placed so that a portion of a laminated film composed of the light reflecting film and the light absorbing film located inside the frame-shaped region is electrically connected to a portion of the laminated film located outside the frame-shaped region.

Abstract: According to one embodiment, an imprint mask includes a quartz plate. The quartz plate has a plurality of concave sections formed in part of an upper surface on the quartz plate, and impurities are contained in a portion between the concave sections in the quartz plate.

Abstract: According to one embodiment, a mask inspection apparatus includes a decompression chamber, a holder, a light irradiation unit, a detection unit, an electrode, and a control unit. The holder is provided in the decompression chamber and holds a mask. The light irradiation unit irradiates a major surface of the mask held by the holder with a light. The detection unit is provided in the decompression chamber to detect electrons generated when the major surface of the mask is irradiated with the light. The electrode is provided between the holder and the detection unit and guides the electrons in a direction from the holder toward the detection unit. The control unit compares a detection result of the electrons detected by the detection unit with a reference value.

Abstract: According to one embodiment, a mask manufacturing method includes acquiring positional deviation information between an actual position of a pattern formed on a mask substrate and a design position decided at the time of designing the pattern; calculating an irradiating amount and an irradiating position of radiation to be irradiated to a predetermined area of a square on the mask substrate according to the calculated positional deviation information; and irradiating the radiation based on the calculated irradiating amount and the calculated irradiating position to form in a part of the mask substrate a heterogeneous layer of which volume is expanded more greatly than that of the surrounding mask substrate region.

Abstract: According to one embodiment, a mask manufacturing device includes a positional-deviation calculating unit that acquires positional deviation information between an actual position of a pattern formed on a mask substrate and a design position decided at the time of designing the pattern to a predetermined area of a square on the mask substrate; an irradiating-condition calculating unit that calculates an irradiating condition including an irradiating amount and an irradiating position of radiation to correct the positional deviation calculated to the predetermined area of a square on the mask substrate by using positional-deviation correction information, which indicates a relationship between the irradiating amount and the irradiating position of the radiation to the mask substrate and a pattern position change after irradiation of the radiation; and an irradiating unit that irradiates the mask substrate with the radiation under the irradiating condition calculated by the irradiating-condition calculating uni

Abstract: This invention discloses a photomask manufacturing method. A pattern dimensional map is generated by preparing a photomask in which a mask pattern is formed on a transparent substrate, and measuring a mask in-plane distribution of the pattern dimensions. A transmittance correction coefficient map is generated by dividing a pattern formation region into a plurality of subregions, and determining a transmittance correction coefficient for each of the plurality of subregions. The transmittance correction value of each subregion is calculated on the basis of the pattern dimensional map and the transmittance correction coefficient map. The transmittance of the transparent substrate corresponding to each subregion is changed on the basis of the transmittance correction value.

Abstract: A method of manufacturing an exposure mask includes generating or preparing flatness variation data relating to a mask blanks substrate to be processed into an exposure mask, the flatness variation data being data relating to change of flatness of the mask blank substrate caused when the mask blank substrate is chucked by a chuck unit of an exposure apparatus, generating position correction, data of a pattern to be drawn on the mask blanks substrate based on the flatness variation data such that a mask pattern of the exposure mask comes to a predetermined position in a state that the exposure mask is chucked by the chuck unit, and drawing a pattern on the mask blanks substrate, the drawing the pattern including drawing the pattern with correcting a drawing position of the pattern and inputting drawing data corresponding to the pattern and the position correction data into a drawing apparatus.

Abstract: A pattern is formed on a mask substrate. Positional deviation information between an actual position of the pattern formed on the mask substrate and a design position decided at the time of designing the pattern is calculated. A heterogeneous layer of which a volume expands more greatly than that of surrounding mask substrate region is formed in a predetermined position within the mask substrate so that volume expansion of the heterogeneous layer according to the positional deviation information is achieved.

Abstract: This invention discloses a photomask manufacturing method. A pattern dimensional map is generated by preparing a photomask in which a mask pattern is formed on a transparent substrate, and measuring a mask in-plane distribution of the pattern dimensions. A transmittance correction coefficient map is generated by dividing a pattern formation region into a plurality of subregions, and determining a transmittance correction coefficient for each of the plurality of subregions. The transmittance correction value of each subregion is calculated on the basis of the pattern dimensional map and the transmittance correction coefficient map. The transmittance of the transparent substrate corresponding to each subregion is changed on the basis of the transmittance correction value.

Abstract: There is disclosed a manufacturing method for exposure mask, which comprises acquiring a first information showing surface shape of surface of each of a plurality of mask substrates, and a second information showing the flatness of the surface of each of mask substrates before and after chucked on a mask stage of an exposure apparatus, forming a corresponding relation of each mask substrate, the first information and the second information, selecting the second information showing a desired flatness among the second information of the corresponding relation, and preparing another mask substrate having the same surface shape as the surface shape indicated by the first information in the corresponding relation with the selected second information, and forming a desired pattern on the above-mentioned another mask substrate.

Abstract: This invention discloses a photomask manufacturing method. A pattern dimensional map is generated by preparing a photomask in which a mask pattern is formed on a transparent substrate, and measuring a mask in-plane distribution of the pattern dimensions. A transmittance correction coefficient map is generated by dividing a pattern formation region into a plurality of subregions, and determining a transmittance correction coefficient for each of the plurality of subregions. The transmittance correction value of each subregion is calculated on the basis of the pattern dimensional map and the transmittance correction coefficient map. The transmittance of the transparent substrate corresponding to each subregion is changed on the basis of the transmittance correction value.

Abstract: A pattern verification-test method according to an embodiment of the present invention includes: deriving an illumination condition at a verification-test subject position in a photomask surface of a mask pattern as a verification or a test subject based on the verification-test subject position and illumination condition information about a distribution of an illumination condition in a photomask surface of exposure light incident on the mask pattern, performing lithography simulation on the mask pattern based on the derived illumination condition and the mask pattern, and verifying or testing the mask pattern based on a result of the lithography simulation.