Abstract: According to an aspect of the invention, there is provided a photomask evaluation method including, acquiring a pattern image of a photomask, generating sidewall angle data on the sidewall angle of a pattern from the pattern image, extracting a pattern outline from the pattern image to generate outline data, and running a lithographic simulation on the basis of the outline data and the sidewall angle data to calculate an exposure margin.

Abstract: A photomask is disclosed, which includes a substrate transparent to irradiation light, a low density diffraction area having a plurality of low-density arranged light reducing portions which are arranged at a low density on the transparent substrate at a period more than twice the wavelength of the irradiation light, and a high density diffraction area having a plurality of high-density arranged light reducing portions which are arranged at a high density on the transparent substrate at a period less than twice the wavelength of the irradiation light and have different optical characteristics from the low-density arranged light reducing portions.

Abstract: A mask substrate comprises a transparent substrate including a reference mark and a light shielding film formed on the transparent substrate.

Abstract: According to an aspect of the invention, there is provided a method for selecting a photomask substrate, including dividing a chip area scheduled to be arranged on the photomask substrate regarding a specific transfer pattern layer into a management pattern area in which an element pattern changed in shape by birefringence of the photomask substrate is arranged, and an area other than the management pattern area, setting a standard value of a size of birefringence of an area in which the management pattern area of the photomask substrate is arranged, inspecting the size of the birefringence of each of a plurality of photomask substrate candidates, and selecting a photomask substrate, in which the size of the birefringence satisfies the standard value, as a photomask substrate of the specific transfer pattern layer from the plurality of photomask substrate candidates.

Abstract: According to an aspect of the invention, there is provided a mask defect inspecting method including setting, for a mask to be inspected, an optical defect inspection sensitivity for defect inspection using light, setting, for the mask to be inspected, an EB defect inspection sensitivity for defect inspection using electron beams, associating pattern data on the mask to be inspected with information on a required defect inspection sensitivity to create defect inspection data, inputting the defect inspection data and the optical defect inspection sensitivity to an optical defect inspecting apparatus to carry out defect inspection on an area corresponding to the pattern data associated with the optical defect inspection sensitivity, and inputting the defect inspection data and the EB defect inspection sensitivity to an EB defect inspecting apparatus to carry out defect inspection on an area corresponding to the pattern data associated with the EB defect inspection sensitivity.

Abstract: According to an aspect of the invention, there is provided a mask defect repairing method of repairing a defect caused by a foreign object on a light transmissive photomask, the method including moving the foreign object on a light transmission section of the light transmissive photomask using a manipulator, and placing the foreign object on a shielding section of the light transmissive photo mask.

Abstract: A photomask comprises a substrate, a translucent film selectively formed on the substrate, and a shading film selectively formed on the translucent film, wherein when the substrate, the translucent film and the shading film have Young's moduli (MPa) E0 E1 and E2, and film thickness (m) d0, d1 and d2 respectively, internal stresses (MPa) of the translucent film and the shading film at room temperature are s1 and s2 respectively, a covering rate by the translucent film defined by an area in which the shading film is not formed is expressed as h, and coefficients are expressed as k1=1.3×10?8, k2=?9.5×10?2, k3=6.0×10?7, and k4=?5.2×10?2 respectively, the substrate, the translucent film and the shading film satisfy a condition given by the following expression: ? 1 E 0 · d 0 · { h · ( k 1 · S 1 E 1 · d 1 + k 2 ) + ( k 3 · S 2 E 2 · d 2 + k 4 ) } ? ? 1.4 × 10 - 4 ? ( m - 1 ) .

Abstract: A developing method comprises determining in advance the relation of resist dissolution concentration in a developing solution and resist dissolution speed by the developing solution, estimating in advance the resist dissolution concentration where the resist dissolution speed is a desired speed or more from the relation, and developing in a state in which the resist dissolution concentration in the developing solution is the estimated dissolution concentration or less.

Abstract: A pattern forming method includes developing a resist film on a main surface of a substrate by flowing a developing solution on the film to form a resist pattern, the developing the film including partitioning the surface into M (?2) regions and determining correction exposure dose for each of the M region, the determining the correction exposure dose including determining a correction exposure dose for an i-th (1?i?M) region so that an actual pattern dimension of a pattern on the i-th region matches a design pattern dimension based on a pattern opening ratio of a pattern to be formed on the substrate, the pattern being located on a region which is further upstream region than the i-th region with respect to an upstream direction of a flow of the solution, and forming the pattern by etching the substrate using the resist pattern as a mask.

Abstract: There is disclosed a manufacturing method for exposure mask, which comprises acquiring a first information showing surface shape of surface of each of a plurality of mask substrates, and a second information showing the flatness of the surface of each of mask substrates before and after chucked on a mask stage of an exposure apparatus, forming a corresponding relation of each mask substrate, the first information and the second information, selecting the second information showing a desired flatness among the second information of the corresponding relation, and preparing another mask substrate having the same surface shape as the surface shape indicated by the first information in the corresponding relation with the selected second information, and forming a desired pattern on the above-mentioned another mask substrate.

Abstract: A developing method comprises determining in advance the relation of resist dissolution concentration in a developing solution and resist dissolution speed by the developing solution, estimating in advance the resist dissolution concentration where the resist dissolution speed is a desired speed or more from the relation, and developing in a state in which the resist dissolution concentration in the developing solution is the estimated dissolution concentration or less.

Abstract: A method of manufacturing an exposure mask includes generating or preparing flatness variation data relating to a mask blanks substrate to be processed into an exposure mask, the flatness variation data being data relating to change of flatness of the mask blank substrate caused when the mask blank substrate is chucked by a chuck unit of an exposure apparatus, generating position correction data of a pattern to be drawn on the mask blanks substrate based on the flatness variation data such that a mask pattern of the exposure mask comes to a predetermined position in a state that the exposure mask is chucked by the chuck unit, and drawing a pattern on the mask blanks substrate, the drawing the pattern including drawing the pattern with correcting a drawing position of the pattern and inputting drawing data corresponding to the pattern and the position correction data into a drawing apparatus.

Abstract: An image data correction method includes preparing correction data for correcting a distortion of an image obtained by an image acquiring section, acquiring outline data of a desired pattern obtained by the image acquiring section, and correcting the outline data of the desired pattern using the correction data.

Abstract: A method for a substrate processing apparatus having a substrate holding mechanism and a chemical solution dispensing/sucking mechanism including a chemical solution dispensing port for supplying a first chemical solution and a chemical solution suction port, includes placing the target substrate on the substrate holding mechanism, laying out an auxiliary plate at a periphery of the substrate such that the two main faces are substantially flush with each other, supplying a second chemical solution onto the main faces, dispensing the first solution from the dispensing port and sucking the first and second solutions through the suction port, with the dispensing and suction ports brought into contact with the second solution, and while dispensing the first solution from the dispensing port and sucking the first solution through the suction port, scanning the dispensing/sucking mechanism such that the dispensing and suction ports are opposed to the main face of the substrate.

Abstract: There is disclosed a manufacturing method for exposure mask, which comprises acquiring a first information showing surface shape of surface of each of a plurality of mask substrates, and a second information showing the flatness of the surface of each of mask substrates before and after chucked on a mask stage of an exposure apparatus, forming a corresponding relation of each mask substrate, the first information and the second information, selecting the second information showing a desired flatness among the second information of the corresponding relation, and preparing another mask substrate having the same surface shape as the surface shape indicated by the first information in the corresponding relation with the selected second information, and forming a desired pattern on the above-mentioned another mask substrate.

Abstract: A developing method comprises determining in advance the relation of resist dissolution concentration in a developing solution and resist dissolution speed by the developing solution, estimating in advance the resist dissolution concentration where the resist dissolution speed is a desired speed or more from the relation, and developing in a state in which the resist dissolution concentration in the developing solution is the estimated dissolution concentration or less.

Abstract: A developing method comprises determining in advance the relation of resist dissolution concentration in a developing solution and resist dissolution speed by the developing solution, estimating in advance the resist dissolution concentration where the resist dissolution speed is a desired speed or more from the relation, and developing in a state in which the resist dissolution concentration in the developing solution is the estimated dissolution concentration or less.

Abstract: A developing method comprises determining in advance the relation of resist dissolution concentration in a developing solution and resist dissolution speed by the developing solution, estimating in advance the resist dissolution concentration where the resist dissolution speed is a desired speed or more from the relation, and developing in a state in which the resist dissolution concentration in the developing solution is the estimated dissolution concentration or less.

Abstract: A developing method comprises determining in advance the relation of resist dissolution concentration in a developing solution and resist dissolution speed by the developing solution, estimating in advance the resist dissolution concentration where the resist dissolution speed is a desired speed or more from the relation, and developing in a state in which the resist dissolution concentration in the developing solution is the estimated dissolution concentration or less.

Abstract: A substrate drying method according to the present invention comprises disposing a flat plate which has an opening and which is equal to a substrate or larger than the substrate above the substrate to have a predetermined space between the flat plate and the substrate and discharging a gas from the opening, and moving, by the gas, a removal target on the substrate outside the substrate.