Patents by Inventor Masamitsu Itoh

Masamitsu Itoh has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 5909030
    Abstract: The pattern transfer apparatus includes a first substrate on which a circuit pattern of an arbitrary semiconductor device is drawn, a first stage including a substrate holding mechanism for holding the first substrate, an illumination optical system for illuminating the circuit pattern of the semiconductor device drawn on the first substrate, a second stage on which a second substrate can be mounted, a reducing optical system or an equimultiple optical system for transferring a part of the circuit pattern of the semiconductor device drawn on the first substrate, and a mechanism for moving at least one of first and second elements, the first element being one of the first and second stages and the second element being the reducing optical system or an equimultiple optical system, wherein the first stage has a holding mechanism for holding one of substrates of at least two sizes and for changing a gripping force in accordance with the sizes of the substrates.
    Type: Grant
    Filed: August 7, 1997
    Date of Patent: June 1, 1999
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Shusuke Yoshitake, Masamitsu Itoh, Tadahiro Takigawa
  • Patent number: 5907393
    Abstract: This invention provides an exposure mask including a translucent film formed on a light-transmitting substrate and having a mask pattern, and a stabilized region formed in the boundary between the light-transmitting substrate and the translucent film or on at least the surface of the translucent film to prevent variations in physical properties of the translucent film.
    Type: Grant
    Filed: October 11, 1996
    Date of Patent: May 25, 1999
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Kenji Kawano, Shinichi Ito, Iwao Higashikawa, Masamitsu Itoh, Takashi Kamo, Hiroaki Hazama, Takayuki Iwamatsu
  • Patent number: 5792376
    Abstract: A plasma processing apparatus includes a first electrode which is substantially flat and has a substrate mounting region mounted with a substrate to be treated, a chamber for containing the first electrode, gas introducing means for introducing a predetermined gas into the chamber, gas exhausting means for exhausting the gas from the chamber, a second electrode constituted of one of a metal portion of the chamber and a metal plate provided inside the chamber, power supply means for supplying high-frequency power between the first electrode and the second electrode, and an insulative cover for covering a surface of the first electrode other than the substrate mounting region. The substrate mounting region is formed as a convex portion on the first electrode, and an outside shape thereof is smaller than that of the substrate. The substrate is mounted on the substrate mounting region so as to completely cover the substrate mounting region.
    Type: Grant
    Filed: December 29, 1995
    Date of Patent: August 11, 1998
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Hideki Kanai, Ikuo Yoneda, Masamitsu Itoh
  • Patent number: 5728494
    Abstract: This invention provides an exposure mask including a translucent film formed on a light-transmitting substrate and having a mask pattern, and a stabilized region formed in the boundary between the light-transmitting substrate and the translucent film or on at least the surface of the translucent film to prevent variations in physical properties of the translucent film.
    Type: Grant
    Filed: October 11, 1996
    Date of Patent: March 17, 1998
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Kenji Kawano, Shinichi Ito, Iwao Higashikawa, Masamitsu Itoh, Takashi Kamo, Hiroaki Hazama, Takayuki Iwamatsu
  • Patent number: 5629115
    Abstract: This invention provides an exposure mask including a translucent film formed on a light-transmitting substrate and having a mask pattern, and a stabilized region formed in the boundary between the light-transmitting substrate and the translucent film or on at least the surface of the translucent film to prevent variations in physical properties of the translucent film.
    Type: Grant
    Filed: January 11, 1996
    Date of Patent: May 13, 1997
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Kenji Kawano, Shinichi Ito, Iwao Higashikawa, Masamitsu Itoh, Takashi Kamo, Hiroaki Hazama, Takayuki Iwamatsu
  • Patent number: 5291536
    Abstract: A method for forming an X-ray exposure mask having an X-ray permeable film with a high visible-light transmissivity. The method includes the steps of forming an aluminum oxide anti-reflective film on an x-ray permeable film, placing an x-ray absorber on the anti-reflective film and etching with the x-ray absorber to form x-ray pattern.
    Type: Grant
    Filed: June 18, 1992
    Date of Patent: March 1, 1994
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Masamitsu Itoh, Shinji Sugihara, Ken-ichi Murooka
  • Patent number: 5188706
    Abstract: An X-ray mask can be manufactured by forming an X-ray transmitting thin film on a mask support, forming an X-ray absorber thin film on the X-ray transmitting thin film, and patterning the X-ray absorber thin film with a desired pattern to form an X-ray absorber pattern. Prior to the patterning, at least one inert element with an atomic number greater than that of neon is ion-implanted in the X-ray absorber thin film.
    Type: Grant
    Filed: March 16, 1990
    Date of Patent: February 23, 1993
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Masaru Hori, Masamitsu Itoh
  • Patent number: 5166962
    Abstract: An X-ray mask includes an X-ray transmitting thin film consisting of SiC, a W X-ray absorber formed on one surface of the thin film and having a predetermined pattern, and a support frame arranged on a peripheral portion of the thin film. The thin film is constituted by a plurality of SiC layers having different C/Si composition ratios. When the thin film is formed by a CVD method, the flow rate of a gas containing Si is fixed while a gas containing C or a diluted gas mixture of the gas containing C is changed. Consequently, the visible light transmittance of the thin film is improved.
    Type: Grant
    Filed: January 3, 1992
    Date of Patent: November 24, 1992
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Ken-ichi Murooka, Masamitsu Itoh
  • Patent number: 4311721
    Abstract: Distillers solubles are purified by a centrifugal separation to a degree above 50,000 which is the product of g x minute, or a filtration with addition of a filter aid. The clarified matter is purified by a molecular sieve ultrafiltration treatment, reverse osmosis or an organic solvent precipitation. The clarified matter or purified matter thus obtained is pulverized by spray drying, lyophilic drying or air drying.Said clarified matter, purified matter or pulverized matter is added to a fermentation medium or a feed as an available component.
    Type: Grant
    Filed: June 2, 1980
    Date of Patent: January 19, 1982
    Assignees: National Tax Administration Agency, Kibun Company Limited
    Inventors: Kiyoshi Yoshizawa, Kikuo Nojiro, Masamitsu Itoh, Hiroshi Kiuchi, Kazuo Horii
  • Patent number: 4278699
    Abstract: Distillers solubles are purified by a centrifugal separation to a degree above 50,000, which is the product of g.times.minute, or a filtration with addition of a filter aid. The clarified matter is purified by a molecular sieve treatment, ultrafiltration, reverse osmosis or an organic solvent precipitation. The clarified matter or purified matter thus obtained is pulverized by spray drying, lyophilic drying or air drying.Said clarified matter, purified matter or pulverized matter is added to a fermentation medium or a feed as an available component.
    Type: Grant
    Filed: January 26, 1977
    Date of Patent: July 14, 1981
    Assignees: National Tax Administration Agency, Kibun Company Limited
    Inventors: Kiyoshi Yoshizawa, Kikuo Nojiro, Masamitsu Itoh, Hiroshi Kiuchi, Kazuo Horii
  • Patent number: 4237232
    Abstract: Distillers solubles are purified by a centrifugal separation to a degree above 50,000, which is the product of g .times. minute, or a filtration with addition of a filter aid. The clarified matter is purified by a molecular sieve treatment, ultrafiltration, reverse osmosis or an organic solvent precipitation. The clarified matter or purified matter thus obtained is pulverized by spray drying, lyophilic drying or air drying.Said clarified matter, purified matter or pulverized matter is added to a fermentation medium or a feed as an available component.
    Type: Grant
    Filed: May 2, 1978
    Date of Patent: December 2, 1980
    Assignees: National Tax Administration Agency, Kibun Company Limited
    Inventors: Kiyoshi Yoshizawa, Kikuo Nojiro, Masamitsu Itoh, Hiroshi Kiuchi, Kazuo Horii