Patents by Inventor Masanaga Fukasawa

Masanaga Fukasawa has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20200373135
    Abstract: An etching method includes inputting, to a setting unit, at least electric power, a pressure, and a gas flow rate, performing etching processing in a chamber, on the basis of a value inputted to the setting unit, and calculating an ion energy distribution mathematical function, by using a measured value upon the etching processing.
    Type: Application
    Filed: July 3, 2018
    Publication date: November 26, 2020
    Inventor: MASANAGA FUKASAWA
  • Patent number: 10804313
    Abstract: The present technology relates to a semiconductor device and a solid-state imaging device of which crack resistance can be improved in a simpler way. The semiconductor device has an upper substrate that is constituted by a Si substrate and wiring layers laminated on the Si substrate and a second substrate that is constituted by a Si substrate and wiring layers laminated on the Si substrate and is joined to the upper substrate. In addition, a pad for wire bonding or probing is formed in the upper substrate, and pads for protecting corner or side parts of the pad for wire bonding or probing are radially laminated and provided in each of the wiring layers between the pad and the Si substrate of the lower substrate. The present technology can be applied to a solid-state imaging device.
    Type: Grant
    Filed: June 6, 2018
    Date of Patent: October 13, 2020
    Assignee: Sony Corporation
    Inventors: Yoshihisa Kagawa, Nobutoshi Fujii, Masanaga Fukasawa, Tokihisa Kaneguchi, Yoshiya Hagimoto, Kenichi Aoyagi, Ikue Mitsuhashi
  • Patent number: 10504839
    Abstract: Disclosed herein is a semiconductor device including: a substrate having a first conductive layer and a second conductive layer arranged deeper than the first conductive layer; a large-diameter concave portion having, on a main side of a substrate, an opening sized to overlap the first and second conductive layers, with the first conductive layer exposed in part of the bottom of the large-diameter concave portion; a small-diameter concave portion extended from the large-diameter concave portion and formed by digging into the bottom of the large-diameter concave portion, with the second conductive layer exposed at the bottom of the small-diameter concave portion; and a conductive member provided in a connection hole made up of the large- and small-diameter concave portions to connect the first and second conductive layers.
    Type: Grant
    Filed: November 13, 2018
    Date of Patent: December 10, 2019
    Assignee: Sony Corporation
    Inventor: Masanaga Fukasawa
  • Publication number: 20190080997
    Abstract: Disclosed herein is a semiconductor device including: a substrate having a first conductive layer and a second conductive layer arranged deeper than the first conductive layer; a large-diameter concave portion having, on a main side of a substrate, an opening sized to overlap the first and second conductive layers, with the first conductive layer exposed in part of the bottom of the large-diameter concave portion; a small-diameter concave portion extended from the large-diameter concave portion and formed by digging into the bottom of the large-diameter concave portion, with the second conductive layer exposed at the bottom of the small-diameter concave portion; and a conductive member provided in a connection hole made up of the large- and small-diameter concave portions to connect the first and second conductive layers.
    Type: Application
    Filed: November 13, 2018
    Publication date: March 14, 2019
    Applicant: Sony Corporation
    Inventor: Masanaga Fukasawa
  • Patent number: 10157837
    Abstract: Disclosed herein is a semiconductor device including: a substrate having a first conductive layer and a second conductive layer arranged deeper than the first conductive layer; a large-diameter concave portion having, on a main side of a substrate, an opening sized to overlap the first and second conductive layers, with the first conductive layer exposed in part of the bottom of the large-diameter concave portion; a small-diameter concave portion extended from the large-diameter concave portion and formed by digging into the bottom of the large-diameter concave portion, with the second conductive layer exposed at the bottom of the small-diameter concave portion; and a conductive member provided in a connection hole made up of the large- and small-diameter concave portions to connect the first and second conductive layers.
    Type: Grant
    Filed: November 16, 2017
    Date of Patent: December 18, 2018
    Inventor: Masanaga Fukasawa
  • Publication number: 20180286911
    Abstract: The present technology relates to a semiconductor device and a solid-state imaging device of which crack resistance can be improved in a simpler way. The semiconductor device has an upper substrate that is constituted by a Si substrate and wiring layers laminated on the Si substrate and a second substrate that is constituted by a Si substrate and wiring layers laminated on the Si substrate and is joined to the upper substrate. In addition, a pad for wire bonding or probing is formed in the upper substrate, and pads for protecting corner or side parts of the pad for wire bonding or probing are radially laminated and provided in each of the wiring layers between the pad and the Si substrate of the lower substrate. The present technology can be applied to a solid-state imaging device.
    Type: Application
    Filed: June 6, 2018
    Publication date: October 4, 2018
    Applicant: Sony Corporation
    Inventors: Yoshihisa KAGAWA, Nobutoshi FUJII, Masanaga FUKASAWA, Tokihisa KANEGUCHI, Yoshiya HAGIMOTO, Kenichi AOYAGI, Ikue MITSUHASHI
  • Patent number: 10026769
    Abstract: The present technology relates to a semiconductor device and a solid-state imaging device of which crack resistance can be improved in a simpler way. The semiconductor device has an upper substrate that is constituted by a Si substrate and wiring layers laminated on the Si substrate and a second substrate that is constituted by a Si substrate and wiring layers laminated on the Si substrate and is joined to the upper substrate. In addition, a pad for wire bonding or probing is formed in the upper substrate, and pads for protecting corner or side parts of the pad for wire bonding or probing are radially laminated and provided in each of the wiring layers between the pad and the Si substrate of the lower substrate. The present technology can be applied to a solid-state imaging device.
    Type: Grant
    Filed: September 19, 2014
    Date of Patent: July 17, 2018
    Assignee: Sony Corporation
    Inventors: Yoshihisa Kagawa, Nobutoshi Fujii, Masanaga Fukasawa, Tokihisa Kaneguchi, Yoshiya Hagimoto, Kenichi Aoyagi, Ikue Mitsuhashi
  • Publication number: 20180076126
    Abstract: Disclosed herein is a semiconductor device including: a substrate having a first conductive layer and a second conductive layer arranged deeper than the first conductive layer; a large-diameter concave portion having, on a main side of a substrate, an opening sized to overlap the first and second conductive layers, with the first conductive layer exposed in part of the bottom of the large-diameter concave portion; a small-diameter concave portion extended from the large-diameter concave portion and formed by digging into the bottom of the large-diameter concave portion, with the second conductive layer exposed at the bottom of the small-diameter concave portion; and a conductive member provided in a connection hole made up of the large- and small-diameter concave portions to connect the first and second conductive layers.
    Type: Application
    Filed: November 16, 2017
    Publication date: March 15, 2018
    Inventor: Masanaga Fukasawa
  • Patent number: 9859214
    Abstract: Disclosed herein is a semiconductor device including: a substrate having a first conductive layer and a second conductive layer arranged deeper than the first conductive layer; a large-diameter concave portion having, on a main side of a substrate, an opening sized to overlap the first and second conductive layers, with the first conductive layer exposed in part of the bottom of the large-diameter concave portion; a small-diameter concave portion extended from the large-diameter concave portion and formed by digging into the bottom of the large-diameter concave portion, with the second conductive layer exposed at the bottom of the small-diameter concave portion; and a conductive member provided in a connection hole made up of the large- and small-diameter concave portions to connect the first and second conductive layers.
    Type: Grant
    Filed: March 30, 2017
    Date of Patent: January 2, 2018
    Assignee: Sony Corporation
    Inventor: Masanaga Fukasawa
  • Publication number: 20170207163
    Abstract: Disclosed herein is a semiconductor device including: a substrate having a first conductive layer and a second conductive layer arranged deeper than the first conductive layer; a large-diameter concave portion having, on a main side of a substrate, an opening sized to overlap the first and second conductive layers, with the first conductive layer exposed in part of the bottom of the large-diameter concave portion; a small-diameter concave portion extended from the large-diameter concave portion and formed by digging into the bottom of the large-diameter concave portion, with the second conductive layer exposed at the bottom of the small-diameter concave portion; and a conductive member provided in a connection hole made up of the large- and small-diameter concave portions to connect the first and second conductive layers.
    Type: Application
    Filed: March 30, 2017
    Publication date: July 20, 2017
    Inventor: Masanaga Fukasawa
  • Patent number: 9627359
    Abstract: Disclosed herein is a semiconductor device including: a substrate having a first conductive layer and a second conductive layer arranged deeper than the first conductive layer; a large-diameter concave portion having, on a main side of a substrate, an opening sized to overlap the first and second conductive layers, with the first conductive layer exposed in part of the bottom of the large-diameter concave portion; a small-diameter concave portion extended from the large-diameter concave portion and formed by digging into the bottom of the large-diameter concave portion, with the second conductive layer exposed at the bottom of the small-diameter concave portion; and a conductive member provided in a connection hole made up of the large- and small-diameter concave portions to connect the first and second conductive layers.
    Type: Grant
    Filed: June 27, 2016
    Date of Patent: April 18, 2017
    Assignee: Sony Corporation
    Inventor: Masanaga Fukasawa
  • Publication number: 20160307877
    Abstract: Disclosed herein is a semiconductor device including: a substrate having a first conductive layer and a second conductive layer arranged deeper than the first conductive layer; a large-diameter concave portion having, on a main side of a substrate, an opening sized to overlap the first and second conductive layers, with the first conductive layer exposed in part of the bottom of the large-diameter concave portion; a small-diameter concave portion extended from the large-diameter concave portion and formed by digging into the bottom of the large-diameter concave portion, with the second conductive layer exposed at the bottom of the small-diameter concave portion; and a conductive member provided in a connection hole made up of the large- and small-diameter concave portions to connect the first and second conductive layers.
    Type: Application
    Filed: June 27, 2016
    Publication date: October 20, 2016
    Inventor: Masanaga Fukasawa
  • Patent number: 9425142
    Abstract: Disclosed herein is a semiconductor device including: a substrate having a first conductive layer and a second conductive layer arranged deeper than the first conductive layer; a large-diameter concave portion having, on a main side of a substrate, an opening sized to overlap the first and second conductive layers, with the first conductive layer exposed in part of the bottom of the large-diameter concave portion; a small-diameter concave portion extended from the large-diameter concave portion and formed by digging into the bottom of the large-diameter concave portion, with the second conductive layer exposed at the bottom of the small-diameter concave portion; and a conductive member provided in a connection hole made up of the large- and small-diameter concave portions to connect the first and second conductive layers.
    Type: Grant
    Filed: August 20, 2015
    Date of Patent: August 23, 2016
    Assignee: SONY CORPORATION
    Inventor: Masanaga Fukasawa
  • Publication number: 20160233264
    Abstract: The present technology relates to a semiconductor device and a solid-state imaging device of which crack resistance can be improved in a simpler way. The semiconductor device has an upper substrate that is constituted by a Si substrate and wiring layers laminated on the Si substrate and a second substrate that is constituted by a Si substrate and wiring layers laminated on the Si substrate and is joined to the upper substrate. In addition, a pad for wire bonding or probing is formed in the upper substrate, and pads for protecting corner or side parts of the pad for wire bonding or probing are radially laminated and provided in each of the wiring layers between the pad and the Si substrate of the lower substrate. The present technology can be applied to a solid-state imaging device.
    Type: Application
    Filed: September 19, 2014
    Publication date: August 11, 2016
    Applicant: SONY CORPORATION
    Inventors: Yoshihisa KAGAWA, Nobutoshi FUJII, Masanaga FUKASAWA, Tokihisa KANEGUCHI, Yoshiya HAGIMOTO, Kenichi AOYAGI, Ikue MITSUHASHI
  • Patent number: 9293411
    Abstract: Disclosed herein is a semiconductor device including: a substrate having a first conductive layer and a second conductive layer arranged deeper than the first conductive layer; a large-diameter concave portion having, on a main side of a substrate, an opening sized to overlap the first and second conductive layers, with the first conductive layer exposed in part of the bottom of the large-diameter concave portion; a small-diameter concave portion extended from the large-diameter concave portion and formed by digging into the bottom of the large-diameter concave portion, with the second conductive layer exposed at the bottom of the small-diameter concave portion; and a conductive member provided in a connection hole made up of the large- and small-diameter concave portions to connect the first and second conductive layers.
    Type: Grant
    Filed: September 23, 2014
    Date of Patent: March 22, 2016
    Assignee: SONY CORPORATION
    Inventor: Masanaga Fukasawa
  • Patent number: 9287097
    Abstract: The simulation method is for predicting a damage amount due to ultraviolet rays in manufacturing a semiconductor device.
    Type: Grant
    Filed: November 13, 2012
    Date of Patent: March 15, 2016
    Assignee: SONY CORPORATION
    Inventors: Nobuyuki Kuboi, Tetsuya Tatsumi, Masanaga Fukasawa
  • Publication number: 20150357313
    Abstract: Disclosed herein is a semiconductor device including: a substrate having a first conductive layer and a second conductive layer arranged deeper than the first conductive layer; a large-diameter concave portion having, on a main side of a substrate, an opening sized to overlap the first and second conductive layers, with the first conductive layer exposed in part of the bottom of the large-diameter concave portion; a small-diameter concave portion extended from the large-diameter concave portion and formed by digging into the bottom of the large-diameter concave portion, with the second conductive layer exposed at the bottom of the small-diameter concave portion; and a conductive member provided in a connection hole made up of the large- and small-diameter concave portions to connect the first and second conductive layers.
    Type: Application
    Filed: August 20, 2015
    Publication date: December 10, 2015
    Inventor: Masanaga Fukasawa
  • Publication number: 20150008591
    Abstract: Disclosed herein is a semiconductor device including: a substrate having a first conductive layer and a second conductive layer arranged deeper than the first conductive layer; a large-diameter concave portion having, on a main side of a substrate, an opening sized to overlap the first and second conductive layers, with the first conductive layer exposed in part of the bottom of the large-diameter concave portion; a small-diameter concave portion extended from the large-diameter concave portion and formed by digging into the bottom of the large-diameter concave portion, with the second conductive layer exposed at the bottom of the small-diameter concave portion; and a conductive member provided in a connection hole made up of the large- and small-diameter concave portions to connect the first and second conductive layers.
    Type: Application
    Filed: September 23, 2014
    Publication date: January 8, 2015
    Inventor: Masanaga Fukasawa
  • Patent number: 8871633
    Abstract: Disclosed herein is a semiconductor device including: a substrate having a first conductive layer and a second conductive layer arranged deeper than the first conductive layer; a large-diameter concave portion having, on a main side of a substrate, an opening sized to overlap the first and second conductive layers, with the first conductive layer exposed in part of the bottom of the large-diameter concave portion; a small-diameter concave portion extended from the large-diameter concave portion and formed by digging into the bottom of the large-diameter concave portion, with the second conductive layer exposed at the bottom of the small-diameter concave portion; and a conductive member provided in a connection hole made up of the large- and small-diameter concave portions to connect the first and second conductive layers.
    Type: Grant
    Filed: September 14, 2012
    Date of Patent: October 28, 2014
    Assignee: Sony Corporation
    Inventor: Masanaga Fukasawa
  • Patent number: 8586468
    Abstract: An arrangement of semiconductor chips is provided. The arrangement includes a plurality of stacked semiconductor chips each including an integrated circuit. At least one via is formed through the thickness of at least one of the semiconductor chips. A carbon nanotube conductor is formed in the via. The conductor has first and second opposite ends. The first end of the conductor is selectively interconnected with the integrated circuit of its semiconductor chip and the second end of the conductor is selectively interconnected with the integrated circuit of another of the semiconductor chips.
    Type: Grant
    Filed: August 24, 2005
    Date of Patent: November 19, 2013
    Assignees: Sony Corporation, Sony Electronics Inc.
    Inventors: Takeshi Nogami, Masanaga Fukasawa