Patents by Inventor Masanari Koguchi

Masanari Koguchi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20230303961
    Abstract: An object of the invention is to make it possible to provide a mechanism that applies an external stimulus and to measure structural and electromagnetic changes of a cell due to the external stimulus with high sensitivity by an NV center. There is provided an environment control mechanism configured to change a state of a sample by applying an external stimulus to the sample.
    Type: Application
    Filed: March 7, 2023
    Publication date: September 28, 2023
    Applicants: Hitachi, Ltd., National Institutes for Quantum Science and Technology
    Inventors: Masanari KOGUCHI, Takeshi NAKAYAMA, Ryuji IGARASHI, Kiichi KAMINAGA, Satoshi TSUKAMOTO
  • Patent number: 10627354
    Abstract: This substitution site measuring equipment using an electron beam analyzes, with high precision, the structure of a substitution site in a micrometer- to nanometer-order region, by reducing or vanishing the X-ray intensity of diffraction X-rays generated in a specimen. The substitution site measuring equipment measures a substitution site in a crystal by detecting, by means of an X-ray detector, X-rays generated from a specimen upon irradiation of the specimen with an electron beam.
    Type: Grant
    Filed: July 26, 2016
    Date of Patent: April 21, 2020
    Assignee: Hitachi, Ltd.
    Inventors: Yoshihiro Anan, Masanari Koguchi
  • Publication number: 20190017948
    Abstract: This substitution site measuring equipment using an electron beam analyzes, with high precision, the structure of a substitution site in a micrometer- to nanometer-order region, by reducing or vanishing the X-ray intensity of diffraction X-rays generated in a specimen. The substitution site measuring equipment measures a substitution site in a crystal by detecting, by means of an X-ray detector, X-rays generated from a specimen upon irradiation of the specimen with an electron beam.
    Type: Application
    Filed: July 26, 2016
    Publication date: January 17, 2019
    Applicant: Hitachi, Ltd.
    Inventors: Yoshihiro ANAN, Masanari KOGUCHI
  • Patent number: 10088450
    Abstract: Areas having different isotopic ratios are artificially introduced into a metal material before sintering, a heat treatment, or grain boundary diffusion, and atom probe analysis results before and after sintering, a heat treatment, or grain boundary diffusion are compared to evaluate a change in isotopic distribution over time.
    Type: Grant
    Filed: December 8, 2014
    Date of Patent: October 2, 2018
    Assignee: HITACHI, LTD.
    Inventors: Takeshi Nakayama, Masanari Koguchi
  • Publication number: 20170315091
    Abstract: Areas having different isotopic ratios are artificially introduced into a metal material before sintering, a heat treatment, or Grain boundary diffusion, and atom probe analysis results before and after sintering, a heat treatment, or grain boundary diffusion are compared to evaluate a change in isotopic distribution over time.
    Type: Application
    Filed: December 8, 2014
    Publication date: November 2, 2017
    Applicant: HITACHI, LTD.
    Inventors: Takeshi NAKAYAMA, Masanari KOGUCHI
  • Patent number: 9752997
    Abstract: To provide a charged particle beam analyzer enabling an efficient and high-sensitivity analysis of a microscopic light element contained in a heavy metal sample, the charged particle beam analyzer equipped with a WDX spectrometer includes a storage unit 126 having stored therein a correlation database between average atomic numbers and WDX background intensity values obtained with use of a plurality of standard samples and a WDX background processing means 146 including a means 147 for calculating an average atomic number for a sample 129 and a means for eliminating a WDX background intensity value derived from the average atomic number for the sample 129 and the correlation database from a WDX spectrum for the sample 129.
    Type: Grant
    Filed: May 30, 2014
    Date of Patent: September 5, 2017
    Assignee: Hitachi, Ltd.
    Inventors: Yoshihiro Anan, Masanari Koguchi
  • Patent number: 9601308
    Abstract: To analyze an element to be evaluated with high sensitivity and high accuracy in a short period of time, in an electron beam analyzer including a wavelength dispersive X-ray analyzer in an electron microscope. The electron beam analyzer has one diffraction grating in which a plurality of patterns having maximum X-ray reflectance with respect to the respective X-rays are formed. It simultaneously detects an X-ray as an energy reference and an X-ray spectrum to be evaluated. The positional displacement of X-ray energy due to the installation/replacement of the diffraction grating is corrected using the X-ray spectrum as the energy reference, thereby enabling to perform an analysis with high sensitivity and high accuracy in a short period of time.
    Type: Grant
    Filed: October 31, 2012
    Date of Patent: March 21, 2017
    Assignee: Hitachi, Ltd.
    Inventors: Yoshihiro Anan, Masanari Koguchi
  • Publication number: 20170067838
    Abstract: To provide a charged particle beam analyzer enabling an efficient and high-sensitivity analysis of a microscopic light element contained in a heavy metal sample, the charged particle beam analyzer equipped with a WDX spectrometer includes a storage unit 126 having stored therein a correlation database between average atomic numbers and WDX background intensity values obtained with use of a plurality of standard samples and a WDX background processing means 146 including a means 147 for calculating an average atomic number for a sample 129 and a means for eliminating a WDX background intensity value derived from the average atomic number for the sample 129 and the correlation database from a WDX spectrum for the sample 129.
    Type: Application
    Filed: May 30, 2014
    Publication date: March 9, 2017
    Applicant: Hitachi, Ltd.
    Inventors: Yoshihiro ANAN, Masanari KOGUCHI
  • Publication number: 20150318144
    Abstract: To analyze an element to be evaluated with high sensitivity and high accuracy in a short period of time, in an electron beam analyzer including a wavelength dispersive X-ray analyzer in an electron microscope. The electron beam analyzer has one diffraction grating in which a plurality of patterns having maximum X-ray reflectance with respect to the respective X-rays are formed. It simultaneously detects an X-ray as an energy reference and an X-ray spectrum to be evaluated. The positional displacement of X-ray energy due to the installation/replacement of the diffraction grating is corrected using the X-ray spectrum as the energy reference, thereby enabling to perform an analysis with high sensitivity and high accuracy in a short period of time.
    Type: Application
    Filed: October 31, 2012
    Publication date: November 5, 2015
    Applicant: Hitachi, Ltd.
    Inventors: Yoshihiro Anan, Masanari Koguchi
  • Publication number: 20150293040
    Abstract: There is provided a calculating system that can calculate only a gradation image of only a measurement target in monitoring large-scale facility using a transmission imaging on the basis of a cosmic ray. In addition to a gradation image on the basis of a flight track of the cosmic ray, a gradation image of the density length on the basis of structure information of a structural object which is not a measurement target is made and used to correct the gradation image on the basis of the flight track of the cosmic ray.
    Type: Application
    Filed: December 5, 2012
    Publication date: October 15, 2015
    Inventors: Koji Aramaki, Masanari Koguchi, Miyako Matsui
  • Patent number: 8481932
    Abstract: In a charged particle beam analyzer irradiating a charged particle beam to a sample in a vacuum container and detecting an X-ray generated from the sample to analyze the sample, two or more X-ray lenses configured in different manners are provided in the vacuum container. This no longer requires air opening in the vacuum container following X-ray lens replacement and also no longer requires vacuuming, making it possible to perform analysis with high efficiency and high sensitivity.
    Type: Grant
    Filed: March 29, 2012
    Date of Patent: July 9, 2013
    Assignee: Hitachi, Ltd.
    Inventors: Yoshihiro Anan, Masanari Koguchi
  • Patent number: 8334519
    Abstract: In a specimen analyzing apparatus such as a transmission electron microscope for analyzing the structure, composition and electron state of an observing specimen in operation by applying external voltage to the specimen to be observed, a specimen support (mesh) including a mesh electrode connectable to external voltage applying portions of the specimen and a specimen holder including a specimen holder electrode connectable to the mesh electrode and current inlet terminals as well are provided. Voltage is applied externally of the specimen analyzing apparatus to the external voltage applying portions of the specimen through the medium of the specimen holder electrode and mesh electrode.
    Type: Grant
    Filed: May 8, 2007
    Date of Patent: December 18, 2012
    Assignee: Hitachi, Ltd.
    Inventors: Shiano Ono, Masanari Koguchi, Ruriko Tsuneta
  • Publication number: 20120257720
    Abstract: In a charged particle beam analyzer irradiating a charged particle beam to a sample in a vacuum container and detecting an X-ray generated from the sample to analyze the sample, two or more X-ray lenses configured in different manners are provided in the vacuum container. This no longer requires air opening in the vacuum container following X-ray lens replacement and also no longer requires vacuuming, making it possible to perform analysis with high efficiency and high sensitivity.
    Type: Application
    Filed: March 29, 2012
    Publication date: October 11, 2012
    Inventors: Yoshihiro ANAN, Masanari KOGUCHI
  • Publication number: 20110049344
    Abstract: A charged particle beam microscope device of the present invention is configured such that in a diffraction pattern obtained by radiating a parallel charged particle beam onto a sample (22) having a known structure, a distance (r) between spots of a diffraction pattern, which reflects the structure of the sample, is measured, and the variation of a distance (L) between the sample and a detector, which depends on a diffraction angle (?), is corrected. This enables the correction of distortion that varies with an off-axis distance from the optical axis in a diffraction pattern, and a high precision structural analysis by performing accurately analyzing the spot positions of the diffraction pattern.
    Type: Application
    Filed: April 3, 2009
    Publication date: March 3, 2011
    Applicants: HITACHI, LTD., NATIONAL UNIVERSITY CORPORATION HOKKAIDO UNIVERSITY
    Inventors: Takashi Dobashi, Masanari Koguchi, Osamu Kamimura, Hiroya Ohta, Kazutoshi Gohara
  • Patent number: 7633064
    Abstract: An electric charged particle beam microscope measures a geometric distortion at an arbitrary magnification with high precision, and corrects the geometric distortion. A geometric distortion at a first magnification is measured as an absolute distortion based on a standard specimen having a cyclic structure. A microscopic structure specimen is photographed at a geometric distortion measured first magnification and at a geometric distortion unmeasured second magnification. The image at the first magnification is equally transformed to the second magnification to generate a scaled image. The geometric distortion at the second magnification is measured as a relative distortion based on the scaled image. The absolute distortion at the second magnification is obtained on the basis of the absolute distortion at the first magnification and the relative distortion at the second magnification.
    Type: Grant
    Filed: July 5, 2007
    Date of Patent: December 15, 2009
    Assignee: Hitachi High-Technologies Corporation
    Inventors: Ruriko Tsuneta, Masanari Koguchi, Hiromi Inada
  • Patent number: 7518111
    Abstract: Below 50-nm-diameter extremely narrow electrically-conductive fiber is used instead of the electron beam biprism used in the conventional interference electron microscope method. A phenomenon is utilized where a focus-shifted shadow of this fiber is shifted from a straight line by a distance which is proportional to a differentiation of phase change amount of an electron beam due to a sample with respect to a direction perpendicular to the fiber. The phase change amount is quantified by calibrating this shift amount through its comparison with a shift amount caused by another sample in terms of which the corresponding phase change amount has been quantitatively evaluated in advance. The differentiation amount of the quantified phase change in the electron beam due to the sample is visualized, or eventually, is integrated thereby being transformed into absolute phase change amount to be visualized.
    Type: Grant
    Filed: October 6, 2006
    Date of Patent: April 14, 2009
    Assignee: Hitachi, Ltd.
    Inventors: Takao Matsumoto, Masanari Koguchi
  • Publication number: 20090078869
    Abstract: Below 50-nm-diameter extremely narrow electrically-conductive fiber is used instead of the electron beam biprism used in the conventional interference electron microscope method. A phenomenon is utilized where a focus-shifted shadow of this fiber is shifted from a straight line by a distance which is proportional to a differentiation of phase change amount of an electron beam due to a sample with respect to a direction perpendicular to the fiber. The phase change amount is quantified by calibrating this shift amount through its comparison with a shift amount caused by another sample in terms of which the corresponding phase change amount has been quantitatively evaluated in advance. The differentiation amount of the quantified phase change in the electron beam due to the sample is visualized, or eventually, is integrated thereby being transformed into absolute phase change amount to be visualized.
    Type: Application
    Filed: October 6, 2006
    Publication date: March 26, 2009
    Inventors: Takao Matsumoto, Masanari Koguchi
  • Publication number: 20080283748
    Abstract: An electron microscope for simultaneously adjusting the tilt, rotation and temperature of the specimen, and rapidly heating a desired localized section of the specimen. Specimen holders support the specimen on one side, and contain a space on the other side. A laser beam mechanism for heating the vicinity of the specimen irradiates a focused laser beam onto the specimen from this space. The output from a light position sensor installed in the specimen holders is utilized to adjust the irradiation position of the focused laser beam by controlling a fine motion mechanism for inputting light into the vicinity of the specimen stand.
    Type: Application
    Filed: December 21, 2007
    Publication date: November 20, 2008
    Inventors: Takao Matsumoto, Ruriko Tsuneta, Masanari Koguchi
  • Patent number: 7417227
    Abstract: The conventional detection technique has the following problems in detecting interference fringes: (1) Setting and adjustment are complex and difficult to conduct; (2) A phase image and an amplitude image cannot be displayed simultaneously; and (3) Detection efficiency of electron beams is low. The invention provides a scanning interference electron microscope which is improved in detection efficiency of electron beam interference fringes, and enables the user to observe electric and magnetic information easily in a micro domain of a specimen as a scan image of a high S/N ratio under optimum conditions.
    Type: Grant
    Filed: December 6, 2005
    Date of Patent: August 26, 2008
    Assignee: Hitachi High-Technologies Corporation
    Inventors: Takao Matsumoto, Masanari Koguchi
  • Patent number: 7372051
    Abstract: Magnification errors are reduced in the required range of magnification in electric charged particle beam application apparatuses and critical dimension measurement instruments. To achieve this, a first image, whose magnification for the specimen is actually measured, is recorded, a second image, whose magnification for the specimen is unknown, is recorded, and the magnification of the second image for the first image is analyzed by using image analysis. Thereby, the magnification of the second image for the specimen is actually measured. Then, magnification is actually measured in the whole range of magnification by repeating the magnification analysis described above by taking the second image as the first image. Actually measuring the magnification of images for the specimen in the whole range of magnification and calibrating the same permits a reduction of magnification errors by a digit.
    Type: Grant
    Filed: July 27, 2005
    Date of Patent: May 13, 2008
    Assignee: Hitachi High-Technologies Corporation
    Inventors: Ruriko Tsuneta, Hiromi Inada, Masanari Koguchi, Takahito Hashimoto