Abstract: Magnification errors are reduced in the required range of magnification in electric charged particle beam application apparatuses and critical dimension measurement instruments. To achieve this, a first image, whose magnification for the specimen is actually measured, is recorded, a second image, whose magnification for the specimen is unknown, is recorded, and the magnification of the second image for the first image is analyzed by using image analysis. Thereby, the magnification of the second image for the specimen is actually measured. Then, magnification is actually measured in the whole range of magnification by repeating the magnification analysis described above by taking the second image as the first image. Actually measuring the magnification of images for the specimen in the whole range of magnification and calibrating the same permits a reduction of magnification errors by a digit.

Abstract: A scanning transmission electron microscope for scanning a primary electron beam on a sample, detecting a transmitted electron from the sample by a detector, and forming an image of the transmitted electron. The scanning transmission electron microscope includes an electron-optics system which enables switching back the transmitted electron beam to the optical axis by a predetermined quantity, and a determining unit for determining the quantity based on a displacement of the transmitted electron with respect to the detector caused by the scanning of the primary electron beam.

Abstract: An electric charged particle beam microscope measures a geometric distortion at an arbitrary magnification with high precision, and corrects the geometric distortion. A geometric distortion at a first magnification is measured as an absolute distortion based on a standard specimen having a cyclic structure. A microscopic structure specimen is photographed at a geometric distortion measured first magnification and at a geometric distortion unmeasured second magnification. The image at the first magnification is equally transformed to the second magnification to generate a scaled image. The geometric distortion at the second magnification is measured as a relative distortion based on the scaled image. The absolute distortion at the second magnification is obtained on the basis of the absolute distortion at the first magnification and the relative distortion at the second magnification.

Abstract: In a specimen analyzing apparatus such as a transmission electron microscope for analyzing the structure, composition and electron state of an observing specimen in operation by applying external voltage to the specimen to be observed, a specimen support (mesh) including a mesh electrode connectable to external voltage applying portions of the specimen and a specimen holder including a specimen holder electrode connectable to the mesh electrode and current inlet terminals as well are provided. Voltage is applied externally of the specimen analyzing apparatus to the external voltage applying portions of the specimen through the medium of the specimen holder electrode and mesh electrode.

Abstract: A scanning transmission electron microscope for scanning a primary electron beam on a sample, detecting a transmitted electron from the sample by a detector, and forming an image of the transmitted electron. The scanning transmission electron microscope includes an electron-optics system which enables switching back the transmitted electron beam to the optical axis by a predetermined quantity, and a determining unit for determining the quantity based on a displacement of the transmitted electron with respect to the detector caused by the scanning of the primary electron beam.

Abstract: A scanning transmission electron microscope which enhances correction accuracy of a de-scanning coil for canceling a transmitted-electron-beam position change on an electron detector. Here, this transmitted-electron-beam position change appears in accompaniment with a primary-electron-beam position change on a specimen caused by a scanning coil. First, control over the scanning coil is digitized. Moreover, while being synchronized with a digital control signal resulting from this digitization, values in a de-scanning table registered in a FM(2) are outputted to the de-scanning coil. Here, the de-scanning table is created as follows: Diffraction images before and after activating the scanning coil and the de-scanning coil are photographed using a camera. Then, based on a result acquired by analyzing a resultant displacement quantity of the diffraction images by the image processing, the de-scanning table is created.

Abstract: The purpose of the present invention is to inspect the position, number, and size of fine defects in a variety of solid state materials, including a semiconductor device and metallic materials, with a high spatial resolution of nanometer order. The positron irradiation function is installed in the converged electron beam apparatus. The defect location information is obtained from the converged electron beam location information, and the number and size of defects are obtained from the detected information of ?-rays created by pair annihilation of electrons and positrons, and this two-dimensional distribution information is displayed in the monitor. Information on ultra-fine defects in a crystal can be provided with high-speed and high-resolution, and nondestructively in the case of a semiconductor wafer.

Abstract: A scanning transmission electron microscope which enhances correction accuracy of a de-scanning coil for canceling a transmitted-electron-beam position change on an electron detector. Here, this transmitted-electron-beam position change appears in accompaniment with a primary-electron-beam position change on a specimen caused by a scanning coil. First, control over the scanning coil is digitized. Moreover, while being synchronized with a digital control signal resulting from this digitization, values in a de-scanning table registered in a FM (2) are outputted to the de-scanning coil. Here, the de-scanning table is created as follows: Diffraction images before and after activating the scanning coil and the de-scanning coil are photographed using a camera. Then, based on a result acquired by analyzing a resultant displacement quantity of the diffraction images by the image processing, the de-scanning table is created.

Abstract: The conventional detection technique has the following problems in detecting interference fringes: (1) Setting and adjustment are complex and difficult to conduct; (2) A phase image and an amplitude image cannot be displayed simultaneously; and (3) Detection efficiency of electron beams is low. The invention provides a scanning interference electron microscope which is improved in detection efficiency of electron beam interference fringes, and enables the user to observe electric and magnetic information easily in a micro domain of a specimen as a scan image of a high S/N ratio under optimum conditions.

Abstract: Magnification errors are reduced in the required range of magnification in electric charged particle beam application apparatuses and critical dimension measurement instruments. To achieve this, a first images whose magnification for the specimen is actually measured, is recorded, a second image, whose magnification for the specimen is unknowns is recorded, and the magnification of the second image for the first image is analyzed by using image analysis. Thereby, the magnification of the second image for the specimen is actually measured. Then, magnification is actually measured in the whole range of magnification by repeating the magnification analysis described above by taking the second image as the first image. Actually measuring the magnification of images for the specimen in the whole range of magnification and calibrating the same permits a reduction of magnification errors by a digit.

Abstract: The present invention provides an analysis of displacement by calculating the phase variance image P? (k, l) between Fourier transformed images of paired images S1 (n, m) and S2 (n, m) to determine the center of gravity of ? peak appearing on the invert Fourier transform image of the images. The present invention provides numerous advantages such as a precision of displacement analysis of a fraction of pixel to thereby allow to improve the precision of focal analysis, or reduced number of pixels required to achieve the same precision, evaluation of reliability of the analysis by using the ? peak intensity, influence of varying background reduced by using a phase variance component. The improved performance by the present invention allows any operator skilled or not to achieve a best focusing.

Abstract: By use of charged particle beam images picked up in different conditions, a positional displacement caused by parallax is analyzed, and an optics of an apparatus for charged particle beam microscopy is corrected automatically. An analysis method using phase difference of Fourier transform images and having analytic accuracy lower than that for one pixel is adopted for the displacement analysis. In addition, a degree of coincidence between images calculated in this analysis method is used as a criterion for evaluating the reliability of an analysis result. Since the analysis method based on parallax is low in specimen dependency, the operation range is expanded. In addition, by adopting a high-accuracy displacement analysis method, the apparatus correction accuracy is improved by one digit. A malfunction preventing flow is added using the degree of coincidence as a judgement criterion. Thus, the apparatus can deal with unmanned operation.

Abstract: The purpose of the present invention is to inspect the position, number, and size of fine defects in a variety of solid state materials, including a semiconductor device and metallic materials, with a high spatial resolution of nanometer order. The positron irradiation function is installed in the converged electron beam apparatus. The defect location information is obtained from the converged electron beam location information, and the number and size of defects are obtained from the detected information of &ggr;-rays created by pair annihilation of electrons and positrons, and this two-dimensional distribution information is displayed in the monitor. Information on ultra-fine defects in a crystal can be provided with high-speed and high-resolution, and nondestructively in the case of a semiconductor wafer.

Abstract: Disclosed is an observation apparatus and method using an electron beam, capable of measuring stress and strain information on a crystal structure in a specimen using electron beam diffraction images. A method according to the invention includes mounting a specimen on a specimen stage; irradiating a predetermined area in the specimen with an electron beam while scanning the electron beam, and acquiring an enlarged image of a specimen internal structure in the predetermined area; irradiating a specific portion included in the predetermined area and acquiring a diffraction image showing the crystal structure in the specimen; extracting information on the crystal structure in the specimen; displaying the information of the crystal structure in the specimen so as to be superimposed on the acquired enlarged image. The observation method according to the invention can obtain information on the crystal structure in a specimen with a high degree of sensitivity and with a high level of resolution.

Abstract: The present invention provides an analysis of displacement by calculating the phase variance image P′ (k, l) between Fourier transformed images of paired images S1 (n, m) and S2 (n, m) to determine the center of gravity of &dgr; peak appearing on the invert Fourier transform image of the images. The present invention provides numerous advantages such as a precision of displacement analysis of a fraction of pixel to thereby allow to improve the precision of focal analysis, or reduced number of pixels required to achieve the same precision, evaluation of reliability of the analysis by using the &dgr; peak intensity, influence of varying background reduced by using a phase variance component. The improved performance by the present invention allows any operator skilled or not to achieve a best focusing.

Abstract: An autoadjusting electron microscope in which an image processor derives a third image constituting an analysis image from first and second images of a specimen by Fourier-transforming the first and second images to produce Fourier-transformed first and second images, computing a phase variant image from the Fourier-transformed first and second images, and Fourier-transforming or inverse Fourier-transforming the phase variant image to obtain the third image. A computer determines an amount of displacement between the first image and the second image based on a peak appearing in the third image. An identifier determines whether a consistency between the first image and the second image is within a predetermined range based on a magnitude of the peak appearing in the third image. A transformer transforms results obtained by the computer and the identifier into an amount of defocus of an electron lens relative to the specimen.

Abstract: Disclosed is an observation apparatus and method using an electron beam, capable of measuring information regarding a crystal structure in a specimen (such as information regarding stress and strain in the specimen) with high sensitivity and high resolution from an electron beam diffraction image obtained by irradiating the specimen with an electron beam.

Abstract: The present invention provides a solution business for serving high speed and diversified analysis work/result and apparatus maintenance, and provides a function to control the apparatus of a customer and analysis organization with a common command through a network. The analysis organization provides the work involving high level operation and apparatus maintenance, and the interpretation and analysis of the acquired data. The customer participates to the analysis work on line through the video conference. The charge system corresponding to the analysis apparatus and operation content is set in a host computer of the network, the charge is presented to the customer on line as the analysis work proceeds, and the final cost is collected through a bank. Furthermore, the host computer is provided with a library function that stores the past data and literatures for viewing.

Abstract: By use of charged particle beam images picked up in different conditions, a positional displacement caused by parallax is analyzed, and an optics of an apparatus for charged particle beam microscopy is corrected automatically. An analysis method using phase difference of Fourier transform images and having analytic accuracy lower than that for one pixel is adopted for the displacement analysis. In addition, a degree of coincidence between images calculated in this analysis method is used as a criterion for evaluating the reliability of an analysis result. Since the analysis method based on parallax is low in specimen dependency, the operation range is expanded. In addition, by adopting a high-accuracy displacement analysis method, the apparatus correction accuracy is improved by one digit. A malfunction preventing flow is added using the degree of coincidence as a judgement criterion. Thus, the apparatus can deal with unmanned operation.

Abstract: 3-dimensional observation on the atomic arrangement and atomic species in a thin-film specimen are carried out at high speed and accuracy by an electron microscope which measures electrons emitted at high angle from the specimen. A scanning transmission electron microscope has an electron detection device comprising a scintillator converting electrons detected thereby to photons, a photoconductive-film converting photons from the scintillator detected thereby to c.a. 1000 times as many electron-hole pairs as these photons.