Patents by Inventor Masanobu Ando
Masanobu Ando has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 9496471Abstract: A semiconductor light emitting device includes a semiconductor layer, a first electrode, a second electrode, a first interconnection section, a second interconnection section, and a varistor film. The semiconductor layer includes a light emitting layer. The first electrode is provided in a emitting region on the second surface. The second electrode is provided in a non-emitting region on the second surface. The first interconnection section is provided on the first electrode and electrically connected to the first electrode. The second interconnection section is provided on the second electrode and on the first electrode and electrically connected to the second electrode. The varistor film is provided in contact with the first electrode and the second interconnection section between the first electrode and the second interconnection section.Type: GrantFiled: August 10, 2015Date of Patent: November 15, 2016Assignee: KABUSHIKI KAISHA TOSHIBAInventors: Yosuke Akimoto, Yoshiaki Sugizaki, Hideyuki Tomizawa, Masanobu Ando, Akihiro Kojima, Gen Watari, Naoya Ushiyama, Tetsuro Komatsu, Miyoko Shimada, Hideto Furuyama
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Patent number: 9240531Abstract: A semiconductor light-emitting device includes a semiconductor light-emitting layer, a pair of electrodes, a fluorescent material layer and a chromaticity adjusting layer. The semiconductor light-emitting layer emits first light. The pair of electrodes is connected to the semiconductor light-emitting layer. The fluorescent material layer covers at least a center portion of the semiconductor light-emitting layer, and contains a fluorescent material to absorb the first light and radiate second light. The chromaticity adjusting layer covers at least a peripheral portion of the semiconductor light-emitting layer, is exposed to outside, and contains a fluorescent material with a concentration lower than a concentration of the fluorescent material in the fluorescent material layer.Type: GrantFiled: December 22, 2014Date of Patent: January 19, 2016Assignee: KABUSHIKI KAISHA TOSHIBAInventors: Naoya Ushiyama, Gen Watari, Masanobu Ando, Tetsuro Komatsu
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Publication number: 20150364664Abstract: A semiconductor light emitting device includes a semiconductor layer, a first electrode, a second electrode, a first interconnection section, a second interconnection section, and a varistor film. The semiconductor layer includes a light emitting layer. The first electrode is provided in a emitting region on the second surface. The second electrode is provided in a non-emitting region on the second surface. The first interconnection section is provided on the first electrode and electrically connected to the first electrode. The second interconnection section is provided on the second electrode and on the first electrode and electrically connected to the second electrode. The varistor film is provided in contact with the first electrode and the second interconnection section between the first electrode and the second interconnection section.Type: ApplicationFiled: August 10, 2015Publication date: December 17, 2015Applicant: KABUSHIKI KAISHA TOSHIBAInventors: Yosuke AKIMOTO, Yoshiaki SUGIZAKI, Hideyuki TOMIZAWA, Masanobu ANDO, Akihiro KOJIMA, Gen WATARI, Naoya USHIYAMA, Tetsuro KOMATSU, Miyoko SHIMADA, Hideto FURUYAMA
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Publication number: 20150263244Abstract: According to an embodiment, a light emitting device includes a light emitter having an emission peak in a wavelength range of not less than 360 nanometers and not more than 470 nanometers, and a first phosphor having a composition represented by the chemical formula of Ca8-xEuxMg1-yMny(SiO4)4Cl2 (0<x?8, 0?y?1).Type: ApplicationFiled: September 5, 2014Publication date: September 17, 2015Applicant: Kabushiki Kaisha ToshibaInventors: Miyuki SHIMOJUKU, Hideto FURUYAMA, Akihiro KOJIMA, Masanobu ANDO, Yosuke AKIMOTO
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Patent number: 9136439Abstract: According to one embodiment, a semiconductor light emitting device includes a semiconductor layer, a first electrode, a second electrode, a first interconnection section, a second interconnection section, and a varistor film. The semiconductor layer includes a light emitting layer. The first electrode is provided in a emitting region on the second surface. The second electrode is provided in a non-emitting region on the second surface. The first interconnection section is provided on the first electrode and electrically connected to the first electrode. The second interconnection section is provided on the second electrode and on the first electrode and electrically connected to the second electrode. The varistor film is provided in contact with the first electrode and the second interconnection section between the first electrode and the second interconnection section.Type: GrantFiled: February 28, 2013Date of Patent: September 15, 2015Assignee: KABUSHIKI KAISHA TOSHIBAInventors: Yosuke Akimoto, Yoshiaki Sugizaki, Hideyuki Tomizawa, Masanobu Ando, Akihiro Kojima, Gen Watari, Naoya Ushiyama, Tetsuro Komatsu, Miyoko Shimada, Hideto Furuyama
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Publication number: 20150115306Abstract: A semiconductor light-emitting device includes a semiconductor light-emitting layer, a pair of electrodes, a fluorescent material layer and a chromaticity adjusting layer. The semiconductor light-emitting layer emits first light. The pair of electrodes is connected to the semiconductor light-emitting layer. The fluorescent material layer covers at least a center portion of the semiconductor light-emitting layer, and contains a fluorescent material to absorb the first light and radiate second light. The chromaticity adjusting layer covers at least a peripheral portion of the semiconductor light-emitting layer, is exposed to outside, and contains a fluorescent material with a concentration lower than a concentration of the fluorescent material in the fluorescent material layer.Type: ApplicationFiled: December 22, 2014Publication date: April 30, 2015Inventors: Naoya USHIYAMA, Gen WATARI, Masanobu ANDO, Tetsuro KOMATSU
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Patent number: 8952409Abstract: According to one embodiment, a semiconductor light-emitting device includes a semiconductor light-emitting layer, a pair of electrodes, a fluorescent material layer and a chromaticity adjusting layer. The semiconductor light-emitting layer emits first light. The pair of electrodes is connected to the semiconductor light-emitting layer. The fluorescent material layer covers at least a center portion of the semiconductor light-emitting layer, and contains a fluorescent material to absorb the first light and radiate second light. The chromaticity adjusting layer covers at least a peripheral portion of the semiconductor light-emitting layer, is exposed to outside, and contains a fluorescent material with a concentration lower than a concentration of the fluorescent material in the fluorescent material layer.Type: GrantFiled: February 27, 2013Date of Patent: February 10, 2015Assignee: Kabushiki Kaisha ToshibaInventors: Naoya Ushiyama, Gen Watari, Masanobu Ando, Tetsuro Komatsu
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Patent number: 8809981Abstract: A method for manufacturing a semiconductor device includes: irradiating a growth substrate with laser light to focus the laser light into a prescribed position inside a crystal for a semiconductor device or inside the growth substrate, the crystal for the semiconductor device being formed on a first major surface of the growth substrate; moving the laser light in a direction parallel to the first major surface; and peeling off a thin layer including the crystal for the semiconductor device from the growth substrate, a wavelength of the laser light being longer than an absorption end wavelength of the crystal for the semiconductor device or the growth substrate, the laser light being irradiated inside a crystal for the semiconductor device or inside the growth substrate.Type: GrantFiled: December 20, 2011Date of Patent: August 19, 2014Assignee: Kabushiki Kaisha ToshibaInventors: Masanobu Ando, Toru Gotoda, Toru Kita
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Patent number: 8735196Abstract: According to one embodiment, in a method of a nitride semiconductor light emitting device, a nitride semiconductor laminated body is formed on a first substrate having a first size. A first adhesion layer with a second size smaller than the first size is formed on the nitride semiconductor laminated body. A second adhesion layer is formed on a second substrate. The first and the second substrates are bonded while the first and second adhesion layers being overlapped each other. The first substrate is removed so as to generate a recess having a third size equal to or larger than the second size. The first substrate is etched until exposing the nitride semiconductor laminated body while injecting a chemical solution into the recess. The exposed nitride semiconductor laminated body is etched using the chemical solution so as to form a concave-convex portion in the exposed nitride semiconductor laminated body.Type: GrantFiled: March 2, 2012Date of Patent: May 27, 2014Assignee: Kabushiki Kaisha ToshibaInventor: Masanobu Ando
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Publication number: 20140070248Abstract: According to one embodiment, a semiconductor light-emitting device includes a semiconductor light-emitting layer, a pair of electrodes, a fluorescent material layer and a chromaticity adjusting layer. The semiconductor light-emitting layer emits first light. The pair of electrodes is connected to the semiconductor light-emitting layer. The fluorescent material layer covers at least a center portion of the semiconductor light-emitting layer, and contains a fluorescent material to absorb the first light and radiate second light. The chromaticity adjusting layer covers at least a peripheral portion of the semiconductor light-emitting layer, is exposed to outside, and contains a fluorescent material with a concentration lower than a concentration of the fluorescent material in the fluorescent material layer.Type: ApplicationFiled: February 27, 2013Publication date: March 13, 2014Applicant: KABUSHIKI KAISHA TOSHIBAInventors: Naoya USHIYAMA, Gen WATARI, Masanobu ANDO, Tetsuro KOMATSU
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Publication number: 20140042450Abstract: A semiconductor device is provided that includes a semiconductor layer and an electrode coupled to a semiconductor layer. The electrode includes first and second end portions, the first end portion being closer to the semiconductor layer than the second end portion. The first end portion is formed to have crystals of a first grain size, and the second end portion is formed to have crystals of a second grain size that is larger than the first grain size.Type: ApplicationFiled: March 4, 2013Publication date: February 13, 2014Applicant: Kabushiki Kaisha ToshibaInventors: Kazuhiro AKIYAMA, Masanobu Ando, Gen Watari, Naoya Ushiyama, Shuji Itonaga
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Publication number: 20130313590Abstract: According to one embodiment, a semiconductor light emitting device includes a semiconductor layer, a first electrode, a second electrode, a first interconnection section, a second interconnection section, and a varistor film. The semiconductor layer includes a light emitting layer. The first electrode is provided in a emitting region on the second surface. The second electrode is provided in a non-emitting region on the second surface. The first interconnection section is provided on the first electrode and electrically connected to the first electrode. The second interconnection section is provided on the second electrode and on the first electrode and electrically connected to the second electrode. The varistor film is provided in contact with the first electrode and the second interconnection section between the first electrode and the second interconnection section.Type: ApplicationFiled: February 28, 2013Publication date: November 28, 2013Applicant: KABUSHIKI KAISHA TOSHIBAInventors: Yosuke AKIMOTO, Yoshiaki SUGIZAKI, Hideyuki TOMIZAWA, Masanobu ANDO, Akihiro KOJIMA, Gen WATARI, Naoya USHIYAMA, Tetsuro KOMATSU, Miyoko SHIMADA, Hideto FURUYAMA
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Patent number: 8441023Abstract: According to one embodiment, in a light emitting device, a substrate is transparent to a wavelength of emitted light. A first dielectric layer is formed in a first region on the substrate, and has a refractive index smaller than a refractive index of the substrate. A second dielectric layer is formed in a second region on the substrate surrounding the first region, and has a refractive index larger than the refractive index of the substrate. A first semiconductor layer is formed on the first dielectric layer, the second dielectric layer and the substrate. A second semiconductor layer is formed on the first semiconductor layer, and includes an active layer having a PN junction.Type: GrantFiled: September 6, 2011Date of Patent: May 14, 2013Assignee: Kabushiki Kaisha ToshibaInventors: Taisuke Sato, Masanobu Ando, Hajime Nago, Koichi Tachibana, Toshiyuki Oka, Shinya Nunoue
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Patent number: 8420502Abstract: A method for producing a Group III-V semiconductor device, includes forming, on a base, a plurality of semiconductor devices isolated from one another, forming, through ion implantation, a high-resistance region in a surface layer of a side surface of each semiconductor device, after formation of the high-resistance region, forming a p-electrode and a low-melting-point metal diffusion prevention layer on the top surface of the semiconductor device, bonding the semiconductor device to a conductive support substrate via a low-melting-point metal layer, and removing the base through the laser lift-off process.Type: GrantFiled: February 22, 2010Date of Patent: April 16, 2013Assignee: Toyoda Gosei Co., Ltd.Inventors: Masanobu Ando, Shigemi Horiuchi, Yoshinori Kinoshita, Kazuyoshi Tomita
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Method for manufacturing semiconductor light-emitting device and semiconductor light emitting device
Patent number: 8367523Abstract: A method for manufacturing a semiconductor light-emitting device of the invention includes: forming a semiconductor layer including a light-emitting layer and a first interconnect layer on a major surface of a temporary substrate; dividing the semiconductor layer and the first interconnect layer into a plurality of chips by a trench; collectively bonding each divided portion of the first interconnect layer of a plurality of chips to be bonded not adjacent to each other out of the plurality of chips on the temporary substrate to a second interconnect layer while opposing the major surface of the temporary substrate and the major surface of a supporting substrate forming the second interconnect layer, and collectively transferring a plurality of the bonded chips from the temporary substrate to the supporting substrate after irradiating interfaces between the bonded chips and the temporary substrate and separating the chips and the temporary substrate from each other.Type: GrantFiled: March 18, 2010Date of Patent: February 5, 2013Assignee: Kabushiki Kaisha ToshibaInventors: Yoshiaki Sugizaki, Akihiro Kojima, Masanobu Ando, Kazuyoshi Furukawa -
Publication number: 20120315719Abstract: According to one embodiment, in a method of a nitride semiconductor light emitting device, a nitride semiconductor laminated body is formed on a first substrate having a first size. A first adhesion layer with a second size smaller than the first size is formed on the nitride semiconductor laminated body. A second adhesion layer is formed on a second substrate. The first and the second substrates are bonded while the first and second adhesion layers being overlapped each other. The first substrate is removed so as to generate a recess having a third size equal to or larger than the second size. The first substrate is etched until exposing the nitride semiconductor laminated body while injecting a chemical solution into the recess. The exposed nitride semiconductor laminated body is etched using the chemical solution so as to form a concave-convex portion in the exposed nitride semiconductor laminated body.Type: ApplicationFiled: March 2, 2012Publication date: December 13, 2012Applicant: Kabushiki Kaisha ToshibaInventor: Masanobu ANDO
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Patent number: 8324083Abstract: A method for producing a Group III nitride compound semiconductor element includes growing an epitaxial layer containing a Group III nitride compound semiconductor using a different kind of substrate as an epitaxial growth substrate, adhering a supporting substrate to the top surface of the epitaxial growth layer through a conductive layer, and then removing the epitaxial growth substrate by laser lift-off. Before adhesion of the epitaxial layer and the supporting substrate, a first groove that at least reaches an interface between the bottom surface of the epitaxial layer and the epitaxial growth substrate from the top surface of the epitaxial layer formed on the epitaxial growth substrate and acts as an air vent communicating with the outside of a wafer when the epitaxial layer and the supporting substrate are joined to each other.Type: GrantFiled: September 29, 2009Date of Patent: December 4, 2012Assignee: Toyoda Gosei Co., Ltd.Inventors: Toshiya Uemura, Masanobu Ando, Tomoharu Shiraki, Masahiro Ohashi, Naoki Arazoe, Ryohei Inazawa
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Publication number: 20120095584Abstract: A method for manufacturing a semiconductor device includes: irradiating a growth substrate with laser light to focus the laser light into a prescribed position inside a crystal for a semiconductor device or inside the growth substrate, the crystal for the semiconductor device being formed on a first major surface of the growth substrate; moving the laser light in a direction parallel to the first major surface; and peeling off a thin layer including the crystal for the semiconductor device from the growth substrate, a wavelength of the laser light being longer than an absorption end wavelength of the crystal for the semiconductor device or the growth substrate, the laser light being irradiated inside a crystal for the semiconductor device or inside the growth substrate.Type: ApplicationFiled: December 20, 2011Publication date: April 19, 2012Applicant: KABUSHIKI KAISHA TOSHIBAInventors: Masanobu Ando, Toru Gotoda, Toru Kita
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Publication number: 20120056220Abstract: According to one embodiment, in a light emitting device, a substrate is transparent to a wavelength of emitted light. A first dielectric layer is formed in a first region on the substrate, and has a refractive index smaller than a refractive index of the substrate. A second dielectric layer is formed in a second region on the substrate surrounding the first region, and has a refractive index larger than the refractive index of the substrate. A first semiconductor layer is formed on the first dielectric layer, the second dielectric layer and the substrate. A second semiconductor layer is formed on the first semiconductor layer, and includes an active layer having a PN junction.Type: ApplicationFiled: September 6, 2011Publication date: March 8, 2012Applicant: Kabushiki Kaisha ToshibaInventors: Taisuke SATO, Masanobu Ando, Hajime Nago, Koichi Tachibana, Toshiyuki Oka, Shinya Nunoue
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Patent number: 8101490Abstract: A method for manufacturing a semiconductor device includes: irradiating a growth substrate with laser light to focus the laser light into a prescribed position inside a crystal for a semiconductor device or inside the growth substrate, the crystal for the semiconductor device being formed on a first major surface of the growth substrate; moving the laser light in a direction parallel to the first major surface; and peeling off a thin layer including the crystal for the semiconductor device from the growth substrate, a wavelength of the laser light being longer than an absorption end wavelength of the crystal for the semiconductor device or the growth substrate, the laser light being irradiated inside a crystal for the semiconductor device or inside the growth substrate.Type: GrantFiled: March 22, 2010Date of Patent: January 24, 2012Assignee: Kabushiki Kaisha ToshibaInventors: Masanobu Ando, Toru Gotoda, Toru Kita