Patents by Inventor Masanobu Honda

Masanobu Honda has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20200318579
    Abstract: A canister includes a vapor port leading to a fuel tank, an atmospheric port leading to the atmosphere, a first purge port leading to a first purge passage, and a second purge port leading to a second purge passage. The vapor port is located farther from the second purge port than the first purge port.
    Type: Application
    Filed: March 19, 2020
    Publication date: October 8, 2020
    Applicant: AISAN KOGYO KABUSHIKI KAISHA
    Inventors: Yoshihiko HONDA, Masanobu SHINAGAWA, Hiroyuki TAKAHASHI
  • Patent number: 10777425
    Abstract: A method of processing a substrate is provided. The substrate includes an etching target region and a patterned region. The patterned region is provided on the etching target region. In the method, an organic film is formed on a surface of the substrate. Subsequently, the etching target region is etched by plasma generated from a processing gas. The organic film is formed in a state that the substrate is placed in a processing space within a chamber. When the organic film is formed, a first gas containing a first organic compound is supplied toward the substrate, and then, a second gas containing a second organic compound is supplied toward the substrate. An organic compound constituting the organic film is generated by polymerization of the first organic compound and the second organic compound.
    Type: Grant
    Filed: December 21, 2018
    Date of Patent: September 15, 2020
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Masahiro Tabata, Toru Hisamatsu, Sho Kumakura, Ryuichi Asako, Shinya Ishikawa, Masanobu Honda
  • Patent number: 10777422
    Abstract: In a method according to an embodiment, before etching a target layer of a wafer, a main surface of the target layer is divided into a plurality of areas. A difference value between a groove width of a mask and a reference value of the groove width is calculated for each of the plurality of areas, a temperature of the target layer is adjusted by using correspondence data indicating correspondence between a temperature of the target layer and a film thickness of a formed film. Then, a film is formed on the mask for each atom layer, and a film having a film thickness corresponding to the difference value is formed on the mask to correct the groove width in each of the plurality of areas to the reference value.
    Type: Grant
    Filed: November 8, 2019
    Date of Patent: September 15, 2020
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Yoshihide Kihara, Toru Hisamatsu, Masanobu Honda
  • Publication number: 20200251344
    Abstract: A method for processing a substrate in a plasma chamber is provided. The method includes providing a substrate on which an underlying layer to be etched and a mask are formed. The method further includes forming a protective film on the mask. The method further includes performing an anisotropic deposition to selectively form a deposition layer on a top portion of the mask.
    Type: Application
    Filed: January 31, 2019
    Publication date: August 6, 2020
    Applicant: Tokyo Electron Limited
    Inventors: Toru HISAMATSU, Masanobu HONDA, Yoshihide KIHARA
  • Publication number: 20200234970
    Abstract: An etching method includes a step of selectively forming deposit on a top surface of a mask disposed on a film of a substrate, a step of etching the film after the step of forming the deposit, a step of forming a layer of chemical species included in plasma of a processing gas, on the substrate, and a step of supplying ions from plasma of an inert gas to the substrate so that the chemical species react with the film.
    Type: Application
    Filed: January 17, 2020
    Publication date: July 23, 2020
    Applicant: TOKYO ELECTRON LIMITED
    Inventors: Takayuki HOSHI, Masanobu HONDA, Masahiro TABATA, Toru HISAMATSU
  • Publication number: 20200224611
    Abstract: An evaporated fuel treatment apparatus includes a canister for collecting vapor, a vapor passage for introducing the vapor from a fuel tank to the canister, a purge passage for introducing the vapor from the canister to an intake passage, an atmosphere passage for introducing atmospheric air into the canister, a purge pump provided in the atmosphere passage to pressure feed the vapor to the intake passage, a bypass atmosphere passage branching from the atmosphere passage downstream of the purge pump, an atmosphere check valve for opening/closing the atmosphere passage between a branch portion of the bypass passage and the purge pump, and an atmosphere opening/closing valve for opening/closing the bypass atmosphere passage. During operation of the purge pump, the atmosphere check valve is opened and the atmosphere opening/closing valve is closed. During non-operation of the purge pump, the atmosphere check valve is closed and the atmosphere opening/closing valve is opened.
    Type: Application
    Filed: December 26, 2019
    Publication date: July 16, 2020
    Applicant: AISAN KOGYO KABUSHIKI KAISHA
    Inventors: Yoshihiko HONDA, Masanobu SHINAGAWA, Takanori AKIYAMA
  • Publication number: 20200194257
    Abstract: A substrate processing method includes: providing a substrate having a pattern formed on a surface layer thereof; setting a temperature of the substrate such that a change in the pattern becomes a predetermined change amount; forming a reaction layer having a thickness corresponding to the temperature set in the setting on the surface layer of the substrate; and applying energy to the substrate formed with the reaction layer thereby removing the reaction layer from the surface layer of the substrate.
    Type: Application
    Filed: December 13, 2019
    Publication date: June 18, 2020
    Applicant: TOKYO ELECTRON LIMITED
    Inventors: Toru HISAMATSU, Takayuki KATSUNUMA, Shinya ISHIKAWA, Yoshihide KIHARA, Masanobu HONDA
  • Publication number: 20200176265
    Abstract: A substrate processing method includes providing a processing target substrate having a pattern, forming a film on the substrate, forming a reaction layer on a surface layer of the substrate by plasma, and removing the reaction layer by applying energy to the substrate.
    Type: Application
    Filed: September 9, 2019
    Publication date: June 4, 2020
    Applicant: TOKYO ELECTRON LIMITED
    Inventors: Takayuki KATSUNUMA, Toru HISAMATSU, Shinya ISHIKAWA, Yoshihide KIHARA, Masanobu HONDA, Maju TOMURA, Sho KUMAKURA
  • Publication number: 20200168469
    Abstract: Provided is a method of etching a silicon-containing film made of at least one of silicon oxide and silicon nitride. The etching method includes: (i) preparing a workpiece having a silicon-containing film and a mask provided on the silicon-containing film in a chamber body of a plasma processing apparatus, in which an opening is formed in the mask; and (ii) etching the silicon-containing film, in which plasma is produced in the chamber body from processing gas containing fluorine, hydrogen, and iodine in order to etch the silicon-containing film, and a temperature of the workpiece is set to a temperature of 0° C. or less.
    Type: Application
    Filed: January 31, 2020
    Publication date: May 28, 2020
    Applicant: TOKYO ELECTRON LIMITED
    Inventors: Maju TOMURA, Yoshihide KIHARA, Masanobu HONDA
  • Publication number: 20200158037
    Abstract: An evaporated fuel processing apparatus preventing evaporated fuel from being discharged out of a canister when residual purge gas is made to return to the canister and processed is provided. In the apparatus, an ECU performs residual purge gas processing operation of returning the residual purge gas into the canister and processing during halt of purge control. This operation includes a residual purge gas pressure-feeding process of pressure-feeding the residual purge gas with the air into the canister by the purge pump in a state in which the atmospheric passage is shut off and the purge passage and the second bypass passages are opened and an air discharge process of discharging the air in the canister outside via the atmospheric passage by opening the atmospheric passage while the purge passage and the second bypass passage are shut off.
    Type: Application
    Filed: October 30, 2019
    Publication date: May 21, 2020
    Applicant: AISAN KOGYO KABUSHIKI KAISHA
    Inventors: Masanobu SHINAGAWA, Yoshihiko HONDA, Hiroyuki TAKAHASHI
  • Patent number: 10651044
    Abstract: A processing method including a first step of supplying a first gas including a carbon-containing gas and an inert gas into an inside of a chamber and a second step of generating plasma from the supplied first gas by applying high frequency power for generating plasma and causing a chemical compound including organic matter on a pattern of a predetermined film formed on an object to be processed, wherein a ratio of the carbon-containing gas relative to the inert gas included in the first gas is 1% or less.
    Type: Grant
    Filed: February 23, 2018
    Date of Patent: May 12, 2020
    Assignee: Tokyo Electron Limited
    Inventors: Michiko Nakaya, Masanobu Honda
  • Publication number: 20200126801
    Abstract: A method of etching a silicon-containing film includes providing a workpiece in a chamber body of a plasma processing apparatus. The workpiece has a silicon-containing film and a mask. The mask is provided on the silicon-containing film. An opening is formed in the mask. The etching method further includes etching a silicon-containing film. In the etching, plasma of a processing gas containing carbon and iodine heptafluoride is generated in the chamber body to etch the silicon-containing film.
    Type: Application
    Filed: September 4, 2019
    Publication date: April 23, 2020
    Applicant: TOKYO ELECTRON LIMITED
    Inventors: Maju TOMURA, Yoshihide KIHARA, Masanobu HONDA
  • Publication number: 20200111679
    Abstract: A method for selectively etching a first region of silicon oxide with respect to a second region of silicon nitride, includes: preparing a target object including the first region and the second region in a processing chamber of a plasma processing apparatus; and generating a plasma of a processing gas containing a fluorocarbon gas and a rare gas in the processing chamber. In the generating the plasma of the processing gas, a self-bias potential of a lower electrode on which the target object is mounted is greater than or equal to 4V and smaller than or equal to 350V and a flow rate of the rare gas in the processing gas is 250 to 5000 times of a flow rate of the fluorocarbon gas in the processing gas.
    Type: Application
    Filed: December 9, 2019
    Publication date: April 9, 2020
    Applicant: TOKYO ELECTRON LIMITED
    Inventors: Masahiro TABATA, Takayuki KATSUNUMA, Masanobu HONDA
  • Patent number: 10586710
    Abstract: Provided is a method of etching a silicon-containing film made of at least one of silicon oxide and silicon nitride. The etching method includes: (i) preparing a workpiece having a silicon-containing film and a mask provided on the silicon-containing film in a chamber body of a plasma processing apparatus, in which an opening is formed in the mask; and (ii) etching the silicon-containing film, in which plasma is produced in the chamber body from processing gas containing fluorine, hydrogen, and iodine in order to etch the silicon-containing film, and a temperature of the workpiece is set to a temperature of 0° C. or less.
    Type: Grant
    Filed: August 31, 2018
    Date of Patent: March 10, 2020
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Maju Tomura, Yoshihide Kihara, Masanobu Honda
  • Publication number: 20200075343
    Abstract: In a method according to an embodiment, before etching a target layer of a wafer, a main surface of the target layer is divided into a plurality of areas. A difference value between a groove width of a mask and a reference value of the groove width is calculated for each of the plurality of areas, a temperature of the target layer is adjusted by using correspondence data indicating correspondence between a temperature of the target layer and a film thickness of a formed film. Then, a film is formed on the mask for each atom layer, and a film having a film thickness corresponding to the difference value is formed on the mask to correct the groove width in each of the plurality of areas to the reference value.
    Type: Application
    Filed: November 8, 2019
    Publication date: March 5, 2020
    Applicant: TOKYO ELECTRON LIMITED
    Inventors: Yoshihide KIHARA, Toru HISAMATSU, Masanobu HONDA
  • Publication number: 20200032395
    Abstract: A plasma processing method executed by a plasma processing apparatus in the present disclosure includes a first step and a second step. In the first step, the plasma processing apparatus forms a first film on the side walls of an opening in the processing target, the first film having different thicknesses along a spacing between pairs of side walls facing each other. In the second step, the plasma processing apparatus forms a second film by performing a film forming cycle once or more times after the first step, the second film having different thicknesses along the spacing between the pairs of side walls facing each other.
    Type: Application
    Filed: July 26, 2019
    Publication date: January 30, 2020
    Applicant: TOKYO ELECTRON LIMITED
    Inventors: Michiko NAKAYA, Toru HISAMATSU, Shinya ISHIKAWA, Sho KUMAKURA, Masanobu HONDA, Yoshihide KIHARA
  • Patent number: 10541147
    Abstract: A method for selectively etching a first region of silicon oxide with respect to a second region of silicon nitride, includes: preparing a target object including the first region and the second region in a processing chamber of a plasma processing apparatus; and generating a plasma of a processing gas containing a fluorocarbon gas and a rare gas in the processing chamber. In the generating the plasma of the processing gas, a self-bias potential of a lower electrode on which the target object is mounted is greater than or equal to 4V and smaller than or equal to 350V and a flow rate of the rare gas in the processing gas is 250 to 5000 times of a flow rate of the fluorocarbon gas in the processing gas.
    Type: Grant
    Filed: July 5, 2016
    Date of Patent: January 21, 2020
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Masahiro Tabata, Takayuki Katsunuma, Masanobu Honda
  • Publication number: 20200018247
    Abstract: A vaporized-fuel treating apparatus includes a pump part for controlling a flow of purge gas and a heating part for controlling driving of the pump part and for generating heat. At least a part of the heating part is placed to be exposed in an atmosphere passage. The pump part is either placed in the purge passage or arranged connecting to the purge passage.
    Type: Application
    Filed: June 17, 2019
    Publication date: January 16, 2020
    Applicant: AISAN KOGYO KABUSHIKI KAISHA
    Inventors: Masanobu SHINAGAWA, Yoshihiko HONDA, Shota TSUKAMOTO
  • Patent number: 10504745
    Abstract: In a method according to an embodiment, before etching a target layer of a wafer, a main surface of the target layer is divided into a plurality of areas. A difference value between a groove width of a mask and a reference value of the groove width is calculated for each of the plurality of areas, a temperature of the target layer is adjusted by using correspondence data indicating correspondence between a temperature of the target layer and a film thickness of a formed film. Then, a film is formed on the mask for each atom layer, and a film having a film thickness corresponding to the difference value is formed on the mask to correct the groove width in each of the plurality of areas to the reference value.
    Type: Grant
    Filed: September 19, 2018
    Date of Patent: December 10, 2019
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Yoshihide Kihara, Toru Hisamatsu, Masanobu Honda
  • Patent number: 10504741
    Abstract: A semiconductor manufacturing method includes a first process of etching an insulating film over a conductive layer of an object into a pattern of a mask, and exposing the conductive layer to a recessed portion formed in the insulating film, and a second process of forming an organic film in the recessed portion of the insulating film to which the conductive layer is exposed, the second process including, maintaining a chamber at a predetermined pressure, cooling a stage to ?20° C. or less, and placing the object on the stage, supplying a gas including a gas containing a low vapor pressure material to the chamber, and generating plasma from the gas including the gas containing the low vapor pressure material, and causing precursors generated from the low vapor pressure material and included in the plasma to be deposited in the recessed portion such that the organic film is formed.
    Type: Grant
    Filed: February 23, 2018
    Date of Patent: December 10, 2019
    Assignee: Tokyo Electron Limited
    Inventors: Michiko Nakaya, Masanobu Honda, Toru Hisamatsu, Masahiro Tabata