Abstract: A plasma processing method of processing a processing target object, in which an organic film, a mask film and a resist film are stacked in sequence, by plasma includes a process of supplying a modifying gas, which is a H2 gas, a hydrogen halide gas, or a mixed gas containing a rare gas and a H2 gas or a hydrogen halide gas, into a chamber accommodating therein the processing target object in which a preset pattern is formed on the resist film; and modifying process of modifying the resist film of the processing target object by plasma of the modifying gas at a processing temperature equal to or less than ?20° C.

Abstract: A method for selectively etching a first region of silicon oxide with respect to a second region of silicon nitride includes a first step of exposing a target object having the first region and the second region to a plasma of a processing gas containing a fluorocarbon gas, etching the first region, and forming a deposit containing fluorocarbon on the first region and the second region. The method further includes a second step of etching the first region by a radical of the fluorocarbon contained in the deposit. In the first step, the plasma is generated by a high frequency power supplied in a pulsed manner. Further, the first step and the second step are repeated alternately.

Abstract: A method for selectively etching a first region of silicon oxide with respect to a second region of silicon nitride includes a first step of exposing a target object having the first region and the second region to a plasma of a processing gas containing a fluorocarbon gas, etching the first region, and forming a deposit containing fluorocarbon on the first region and the second region. The method further includes a second step of etching the first region by a radical of the fluorocarbon contained in the deposit. In the first step, the plasma is generated by a high frequency power supplied in a pulsed manner. Further, the first step and the second step are repeated alternately.

Abstract: Non-uniformity in a thickness of a silicon oxide film formed on a processing target object can be reduced even when an aspect ratio of an opening of a mask is increased. A silicon oxide film is formed by repeating a sequence including: (a) a first process of forming a reactant precursor on the processing target object by generating plasma of a first gas containing a silicon halide gas within a processing vessel of a plasma processing apparatus; (b) a second process of generating plasma of a rare gas within the processing vessel after the first process; (c) a third process of forming a silicon oxide film by generating plasma of a second gas containing an oxygen gas within the processing vessel after the second process; and (d) a fourth process of generating plasma of a rare gas within the processing vessel after the third process.

Abstract: A plasma etching method includes a holding step of holding a substrate, a processing gas supplying step of supplying processing gas to a space between the holding unit and an electrode plate facing the holding unit within the processing chamber, and a high frequency power supplying step of converting the processing gas supplied to the space from the plurality of supply parts into plasma by supplying a high frequency power from a high frequency power supply to at least one of the holding unit and the electrode plate. The processing gas supplying step includes controlling an adjustment unit configured to adjust a supply condition for supplying processing gas with respect to each of the plurality of supply parts such that the supply condition that is adjusted varies between a first position and a second position.

Abstract: A method of manufacturing a semiconductor device including a wafer using a plasma etching device which includes a chamber, a chuck provided in the chamber to dispose a wafer to be processed thereon, a focus ring disposed at a peripheral edge portion of the chuck, and a gas supplying mechanism configured to supply various types of gases depending a radial position of the wafer. The method includes: placing a wafer formed with an organic film on the chuck; introducing an etching gas which etches the organic film on the wafer from the process gas supplying mechanism to a central portion of the wafer; introducing an etching inhibiting factor gas having a property of reacting with the etching gas to the peripheral edge portion of the wafer from the gas supplying mechanism; and performing plasma etching on the wafer using the etching gas.

Abstract: A plasma etching method includes: mounting a target substrate on a first electrode which is provided to be parallel with a second electrode with a preset gap within a processing chamber, a base material of the second electrode containing silicon or SiC; generating plasma of a fluorocarbon-based etching gas in a processing space; applying a low frequency AC power or a high frequency AC power having a frequency, which an ion in the plasma is allowed to follow, to the second electrode; and increasing an effective voltage value of the AC power to enhance sputtering at the second electrode such that silicon sputtered from the base material reacts with fluorine radicals generated from the fluorocarbon-based etching gas to produce a reaction product of SiF4, to irradiate electrons generated near the second electrode to the target substrate and to increase a plasma potential near a sidewall of the processing chamber.

Abstract: A method for selectively etching a first region of silicon oxide with respect to a second region of silicon nitride includes a first step of exposing a target object having the first region and the second region to a plasma of a processing gas containing a fluorocarbon gas, etching the first region, and forming a deposit containing fluorocarbon on the first region and the second region. The method further includes a second step of etching the first region by a radical of the fluorocarbon contained in the deposit. In the first step, the plasma is generated by a high frequency power supplied in a pulsed manner. Further, the first step and the second step are repeated alternately.

Abstract: A method includes performing one or more times of a sequence and reducing a film thickness of a fluorocarbon-containing film formed by performing one or more times of the sequence. Each of the one or more times of the sequence includes forming the fluorocarbon-containing film on a processing target object by generating plasma of a processing gas containing a fluorocarbon gas and not containing an oxygen gas; and etching a first region with radicals of fluorocarbon contained in the fluorocarbon-containing film. In the method, an alternating repetition in which the one or more times of the sequence and the reducing of the film thickness of the fluorocarbon-containing film are alternately repeated is performed.

Abstract: Disclosed is a method for etching an organic film. Plasma of a processing gas containing hydrogen gas and nitrogen gas is generated within a processing container of a plasma processing apparatus that accommodates a workpiece. A partial region of the organic film that is exposed from a hard mask is changed into a denatured region by the generation of the plasma of the processing gas. Subsequently, plasma of a rare gas is generated within the processing container. The denatured region is removed by the plasma of the rare gas, and a substance released from the denatured region is deposited on the surface of the hard mask. In this method, the generation of the plasma of the processing gas and the generation of the plasma of the rare gas are repeated alternately.

Abstract: A method for processing a target object includes a formation step of forming a silicon oxide film in a processing chamber by repeatedly executing a sequence including a first step of supplying a first gas containing aminosilane-based gas, a second step of purging a space in the processing chamber after the first step, a third step of generating a plasma of a second gas containing oxygen gas after the second step, and a fourth step of purging the space after the third step. The method further includes a preparation step executed before the target object is accommodated in the processing chamber and a processing step of performing an etching process on the target object. The preparation step is performed before the processing step. The formation step is performed in the preparation step and the processing step. In the first step, a plasma of the first gas is not generated.

Abstract: A method for processing a target object includes a formation step of forming a silicon oxide film in a processing chamber by repeatedly executing a sequence including a first step of supplying a first gas containing aminosilane-based gas, a second step of purging a space in the processing chamber after the first step, a third step of generating a plasma of a second gas containing oxygen gas after the second step, and a fourth step of purging the space after the third step. The method further includes a preparation step executed before the target object is accommodated in the processing chamber and a processing step of performing an etching process on the target object. The preparation step is performed before the processing step. The formation step is performed in the preparation step and the processing step. In the first step, a plasma of the first gas is not generated.

Abstract: A plasma etching method includes: mounting a target substrate on a first electrode which is provided to be parallel with a second electrode with a preset gap within a processing chamber, a base material of the second electrode containing silicon or SiC; generating plasma of a fluorocarbon-based etching gas in a processing space; applying a low frequency AC power or a high frequency AC power having a frequency, which an ion in the plasma is allowed to follow, to the second electrode; and increasing an effective voltage value of the AC power to enhance sputtering at the second electrode such that silicon sputtered from the base material reacts with fluorine radicals generated from the fluorocarbon-based etching gas to produce a reaction product of SiF4, to irradiate electrons generated near the second electrode to the target substrate and to increase a plasma potential near a sidewall of the processing chamber.

Abstract: Disclosed is a method of processing a workpiece including a mask. The processing method includes: a first process of generating plasma of a first gas containing a silicon halide gas in a processing container of a plasma processing apparatus that accommodates a workpiece having a mask, to form a reactive precursor; a second process of purging a space in the processing container; a third process of generating plasma of a second gas containing oxygen gas in the processing container to form a silicon oxide film; and a fourth process of purging the space in the processing container. In the processing method, a sequence including the first to fourth processes is repeated.

Abstract: A method of processing a target object includes (a) exposing a resist mask to active species of hydrogen generated by exciting plasma of a hydrogen-containing gas within a processing vessel while the target object is mounted on a mounting table provided in the processing vessel; and (b) etching a hard mask layer by exciting plasma of an etchant gas within the processing vessel after the exposing of the resist mask to the active species of hydrogen. The plasma is excited by applying of a high frequency power for plasma excitation to an upper electrode. In the method, a distance between the upper electrode and the mounting table in the etching of the hard mask layer ((b) process) is set to be larger than a distance between the upper electrode and the mounting table in the exposing of the resist mask to the active species of hydrogen ((a) process).

Abstract: A method for selectively etching a first region of silicon oxide with respect to a second region of silicon nitride, includes: preparing a target object including the first region and the second region in a processing chamber of a plasma processing apparatus; and generating a plasma of a processing gas containing a fluorocarbon gas and a rare gas in the processing chamber. In the generating the plasma of the processing gas, a self-bias potential of a lower electrode on which the target object is mounted is greater than or equal to 4V and smaller than or equal to 350V and a flow rate of the rare gas in the processing gas is 250 to 5000 times of a flow rate of the fluorocarbon gas in the processing gas.

Abstract: Disclosed is a plasma processing apparatus including a processing container, an ion trapping member partitioning the inside of the processing container into a processing space and a non-processing space and transmitting radicals and trap ions, a placing table, a first gas supply unit supplying a first processing gas into the non-processing space, a second gas supply unit supplying a second processing gas into the processing space, a first high frequency power supply supplying a high frequency power to generate radicals and ions in the non-processing space, a second high frequency power supply supplying a high frequency power to generate radicals and ions in the processing space, and a third high frequency power supply supplying a high frequency power of a lower frequency than that of the high frequency power supplied from the second high frequency power supply to draw the ions generated in the processing space into the workpiece.

Abstract: Disclosed is a plasma etching method including a deposition process and an etching process. For a processing target object including a base layer and a photoresist having a predetermined pattern which are laminated in sequence, the deposition process deposits a protective layer including silicon and carbon on the photoresist of the processing target object by plasma of a first processing gas including silicon tetrachloride gas, methane gas, and hydrogen gas. The etching process etches the base layer by plasma of a second processing gas using the photoresist including the protective layer deposited thereon, as a mask. The second processing gas is different from the first processing gas.

Abstract: Disclosed is a method for etching an organic film. Plasma of a processing gas containing hydrogen gas and nitrogen gas is generated within a processing container of a plasma processing apparatus that accommodates a workpiece. A partial region of the organic film that is exposed from a hard mask is changed into a denatured region by the generation of the plasma of the processing gas. Subsequently, plasma of a rare gas is generated within the processing container. The denatured region is removed by the plasma of the rare gas, and a substance released from the denatured region is deposited on the surface of the hard mask. In this method, the generation of the plasma of the processing gas and the generation of the plasma of the rare gas are repeated alternately.

Abstract: A substrate processing apparatus can suppress an edge gas from being diffused toward a center region of a substrate. An upper electrode 200 serving as a gas introducing unit configured to supply one kind of gas or different kinds of gases to a center region and an edge region of the substrate includes a center gas inlet section 204 having a multiple number of gas holes 212 for a center gas; and an edge gas inlet section 206 having a multiplicity of gas holes 214 for an edge gas. By providing a gas hole formation plate 230 having gas holes 232 communicating with the gas holes 214 at a bottom surface of the edge gas inlet section 206, a vertical position of edge gas discharging openings can be adjusted.