Abstract: A support electrode (2) and a counter electrode (16) constituting parallel plate electrodes are disposed in a process vessel (1). A substrate (W) with an organic material film formed thereon is supported by the support electrode (2). A high-frequency power of a frequency of 40 MHz or above for generating the plasma is applied to the support electrode (2), so that a high-frequency electric field is formed between the support electrode (2) and the counter electrode (16). A process gas is supplied into the process vessel (1) to generate plasma of the process gas by the high-frequency electric field. The organic material film on the substrate (W) is etched with the plasma, with an organic material film serving as a mask. The process gas includes an ionization accelerating gas, such as Ar, that is ionized from a ground state or metastable state with an ionization energy of 10 eV or below and has a maximum ionization cross-section of 2×1016 cm2 or above.

Abstract: In a plasma processing apparatus for plasma-processing a target object accommodated in a processing chamber, a density of fluorine F is measured while performing a plasma processing by using a processing gas containing O2 gas and one or more inert gases based on a ratio of an emission intensity of F radicals [F*] to that of the inert gas [inert gas*] ([F*]/[inert gas*]) on a surface of the target object. In a plasma processing method, the target object is etched with a CF-based processing gas by using a resist film as a mask, deposits on an inner wall of the processing chamber is removed by using the processing gas containing at least O2 gas and one or more inert gases, and the resist film is ashed with another processing gas containing O2 gas. In the deposit removal step, the endpoint thereof is determined based on the F density measured.

Abstract: A plasma processing method includes the steps of etching the target object with a CF-based processing gas by using a patterned resist film as a mask, removing deposits accumulated inside a processing chamber during the step of etching the target object by using a processing gas containing at least an O2 gas, and ashing the resist film by using a processing gas containing at least an O2 gas. Relevant places in the processing chamber from which the deposits are removed are heated in the step of removing the deposits.

Abstract: Disclosed is a plasma processing method for processing a target object by using a plasma of a process gas containing a fluorocarbon compound. Used is a fluorocarbon compound having at least one triple bond within the molecule and at least one CF3 group bonded by a single bond to the carbon atom forming the triple bond with the adjacent carbon atom such as 1,1,1,4,4,4-hexafluoro-2-butyne or 1,1,1,4,4,5,5,5-octafluoro-2-pentyne.

Abstract: An etching gas for etching an oxide film formed on a substrate, includes a main gas composed of an unsaturated fluorocarbon-based gas; and an additive gas composed of a straight-chain saturated fluorocarbon-based gas expressed by CxF(2x+2) (x represents a natural number of 5 or larger). The additive gas is C5F12 gas, C6F14 gas or C7F16 gas. Another etching gas includes a main gas composed of an unsaturated fluorocarbon-based gas; and an additive gas composed of a cyclic saturated fluorocarbon-based gas expressed by CxF2x(x represents a natural number of 5 or larger). In this case, the additive gas is C5F10gas or C6F12 gas.

Abstract: There is provided an etching method and a plasma etching apparatus capable of taking a large etching selection ratio and of forming a hole having an appropriate shape. When etching an etching target film 204 by using an organic film 202 having a predetermined pattern as a mask, processing gas is introduced into an airtight processing container 104. There are provided a high frequency power source 122 of 40 MHz and a high frequency power source 128 of 3.2 MHz, by which two different kinds of high frequency powers are applied to a lower electrode 106. The power of each high frequency power is properly combined, thereby executing the etching process by using low plasma electron density Ne and high self-bias voltage Vdc which are generated by high frequency power.

Abstract: A plasma processing method includes a step of preparing a process subject having an organic layer on a surface thereof, and a step of irradiating the process subject with H2 plasma to improve plasma resistance of the organic layer.

Abstract: The present invention is a plasma etching method including: an arranging step of arranging a pair of electrodes oppositely in a chamber and making one of the electrodes support a substrate to be processed in such a manner that the substrate is arranged between the electrodes, the substrate having an organic-material film; and an etching step of applying a high-frequency electric power to at least one of the electrodes to form a high-frequency electric field between the pair of the electrodes, supplying a process gas into the chamber to form a plasma of the process gas by means of the electric field, and plasma-etching the organic-material film of the substrate by means of the plasma partway in order to form a groove having a flat bottom. A frequency of the high-frequency electric power applied to the at least one of the electrodes is 50 to 150 MHz in the etching step.

Abstract: The present invention is a plasma etching method including: an arranging step of arranging a pair of electrodes oppositely in a chamber and making one of the electrodes support a substrate to be processed in such a manner that the substrate is arranged between the electrodes, the substrate having a silicon film and an inorganic-material film adjacent to the silicon film; and an etching step of applying a high-frequency electric power to at least one of the electrodes to form a high-frequency electric field between the pair of the electrodes, supplying a process gas into the chamber to form a plasma of the process gas by means of the electric field, and selectively plasma-etching the silicon film of the substrate by means of the plasma; wherein a frequency of the high-frequency electric power applied to the at least one of the electrodes is 50 to 150 MHz in the etching step.

Abstract: Each magnet segment 22 of a magnetic field forming mechanism 21 is constructed such that, after the magnetic pole of each magnet segment 22 set to face a vacuum chamber 1 as shown in FIG. 3A, adjoining magnet segments 22 are synchronously rotated in opposite directions, and hence every other magnet element 22 is rotated in the same direction as shown in FIGS. 3B, 3C to thereby control the status of a multi-pole magnetic field formed in the vacuum chamber 1 and surrounding a semiconductor wafer W. Therefore, the status of a multi-pole magnetic field can be easily controlled and set appropriately according to a type of plasma processing process to provide a good processing easily.

Abstract: The present invention is a plasma etching method including: an arranging step of arranging a pair of electrodes oppositely in a chamber and making one of the electrodes support a substrate to be processed in such a manner that the substrate is arranged between the electrodes, the substrate having an organic-material film and an inorganic-material film; and an etching step of applying a high-frequency electric power to at least one of the electrodes to form a high-frequency electric field between the pair of the electrodes, supplying a process gas into the chamber to form a plasma of the process gas by means of the electric field, and selectively plasma-etching the organic-material film of the substrate with respect to the inorganic-material film by means of the plasma; wherein a frequency of the high-frequency electric power applied to the at least one of the electrodes is 50 to 150 MHz in the etching step.

Abstract: A deflection yoke including a saddle shaped horizontal deflection coil, a saddle shaped vertical deflection coil located outside the saddle shaped horizontal deflection coil, and a core located outside the saddle shaped vertical deflection coil, wherein the screen side flange portion (66) of the saddle shaped horizontal deflection coil has a contour (63) of a smoothly curved line and the ratio (r=c/d) of the maximum width (c) to the maximum height (d) for the flange portion (66) is in the range of from 2.2 to 3.5. The present deflection yoke provides improved image quality.

Abstract: The present invention discloses a color cathode ray tube and a deflection yoke. In accordance with the present invention the color cathode ray tube has a color cathode ray tube main body. The main body has a glass panel portion and a glass funnel portion connected to a rear part of the glass panel portion. An electron gun is located at rear part of the color cathode ray tube main body. The color cathode ray tube also has a deflection yoke. The deflection yoke has a saddle shaped horizontal deflection coil located at a rear periphery of the color cathode ray tube main body, a saddle shaped vertical deflection coil located outside the saddle shaped horizontal deflection coil, and a core located outside the saddle shaped vertical deflection coil. The center portion of the screen side flange portion of either the horizontal deflection coil or the vertical deflection coil forms a dent toward the electron gun side.

Abstract: The present invention discloses a color cathode ray tube and a deflection yoke. In accordance with the present invention the color cathode ray tube has a color cathode ray tube main body. The main body has a glass panel portion and a glass funnel portion connected to a rear part of the glass panel portion. An electron gun is located at the rear part of the color cathode ray tube main body. The color cathode ray tube also has a deflection yoke. The deflection yoke has a saddle shaped horizontal deflection coil located at a rear periphery of the color cathode ray tube main body, a saddle shaped vertical deflection coil located outside the saddle shaped horizontal deflection coil, and a core located outside the saddle shaped vertical deflection coil. A screen side flange portion of the horizontal deflection coil or the vertical deflection coil form a projection toward the screen side.

Abstract: A deflection yoke is formed with a saddle shaped horizontal deflection coil (85), a saddle shaped vertical deflection coil (86) located outside the horizontal deflection coil (85), and a ferrite core (87) located outside the vertical deflection coil (86). The screen side flange portion (82) of the horizontal deflection coil (85) has a gap (83) therethrough in the upper and lower direction. The screen side flange portion (82) is an arch-shaped portion provided at a screen side end of the horizontal deflection coil (85).

Abstract: A cathode ray tube apparatus comprising: a deflection yoke comprising a horizontal deflection coil that forms the pin cushion distortion as a whole; a vertical deflection coil that forms the barrel distortion as a whole: a resin frame provided around the periphery of the horizontal deflection coil, which insulates and fastens the horizontal deflection coil and the vertical deflection coil; and a ferrite core provided around the periphery of the vertical deflection coil to strengthen the magnetic flux and the length of part of cone portion of the horizontal deflection coil at the side of the screen whose winding angle is not less than 0 degree nor more than 30 degree with respect to the reference line is 25 mm or longer as measured from the reference line. This cathode ray tube apparatus can correct the pin cushion distortion of raster in the upper-and-lower side of the picture for flattened and increased deflection angle cathode ray tubes with the deflection yoke itself.

Abstract: A deflection yoke which is capable of sufficiently reducing a high order raster distortion (gullwing) at the upper and lower edges of the screen without damaging coil wires of the screen side flange portion (5) at the time of winding the horizontal deflection coil (1). A deflection yoke is formed with a saddle shaped horizontal deflection coil (1), a saddle shaped vertical deflection coil (2) located outside the horizontal deflection coil (1), and a ferrite core (3) located outside the vertical deflection coil (2). The screen side cone portion (1a) of the horizontal deflection coil (1) is wound with a winding angle range from 1.degree. to 80.degree. with a higher winding distribution in the range from 18.degree. to 30.degree. with the horizontal axis as the standard. The head point in the direction of the screen side tube axis of the screen side cone portion (1a) of the horizontal deflection coil (1) is located 30 mm away from the screen side tip portion of the ferrite core (3).

Abstract: A color cathode ray tube device is provided in which the generation of the trapezoidal distortion of a rectangular raster is controlled and an off-axis misconvergence is corrected to obtain high image quality in the peripheral portion of a screen. An annular ferrite core is provided adjacently to the electron gun side end face of a ferrite core of a deflection yoke so as to b decentered radially within the predetermined range around the central axis of the deflection yoke in the tube axial direction. An asymmetric magnetic field is formed on the electron gun side of the deflection yoke by the annular ferrite core which has been decentered. Thus, the off-axis misconvergence can be corrected while controlling the generation of the trapezoidal distortion.

Abstract: A cathode ray tube display which has improved image quality at the periphery of the screen is achieved by correcting the top-and-bottom or right-and-left trapezoid distortion of a rectangular-shaped raster with a simple and inexpensive method of mounting a magnet in a deflection yoke. A magnet is located in an area extending from a screen side opening end of a ferrite core of a deflection yoke located at the rear periphery of a cathode ray tube to the screen side end of an insulating frame. The magnet is located so that the direction of the magnetic poles substantially conforms to the direction of the tube axis. In addition, the magnet is located so that the center line of the magnet is positioned on a plane which includes the vertical axis and tube axis of the cathode ray tube for the correction of top-and-bottom trapezoid distortion and on a plane which includes the horizontal axis and tube axis of the cathode ray tube for the correction of right-and-left trapezoid distortion.

Abstract: A cathode ray tube display which can reduce the temperature rise of its deflection yoke, not by using either extra-fine wires or litz wires but by increasing the heat radiation of its saddle-type coils, is provided. A deflection yoke arranged in the rear periphery of a cathode ray tube display main body includes a saddle-type horizontal deflection coil, an insulating frame located outside of the saddle-type horizontal deflection coil, a saddle-type vertical deflection coil and a ferrite core located outside the insulating frame. The surface of the saddle-type horizontal deflection coil is partially exposed from the screen-side end face of the ferrite core toward the screen, and the surface area of the exposed part is predetermined to be from 100 to 298 cm.sup.2. Similarly, the exposed surface area of the saddle-type vertical deflection coil is predetermined to be from 55 to 185 cm.sup.2.