Abstract: When a terminal enters a cell of a personal-use base station (NBTS) arranged in a certain location area, the terminal receives a location area identifier having a number that is different from an identifier of the location area, and transmits a location updating request with the reception of the location area identifier as a trigger. On receiving the location updating request, a VLR or an NRNC having a registration table, in which the ID of the personal-use base station and the ID of a terminal allowed to use the personal-use base station are registered, judges whether the terminal issued the location updating request is the terminal allowed to use the personal-use base station by referring to the registration table.

Abstract: An engine cooling water passage structure includes a cooling water passage unit that is formed by integrating a water pump for supplying cooling water, a thermostat housing for housing a thermostat, a gas/liquid separation chamber for separating air from the cooling water, cooling water supply passages for supplying to water jackets, via the thermostat housing and the water pump, the cooling water that has been returned from a radiator, cooling water discharge passage for discharging into the radiator the cooling water that has passed through the water jackets, and a bypass passage for returning to the thermostat housing the cooling water that has passed through the water jackets, while bypassing the radiator. This cooling water passage unit is detachably mounted as a unit on an engine main body. Thus, the arrangement allows the engine cooling system to be made compact.

Abstract: An engine cooling water passage structure includes a cooling water passage unit that is formed by integrating a water pump for supplying cooling water, a thermostat housing for housing a thermostat, a gas/liquid separation chamber for separating air from the cooling water, cooling water supply passages for supplying to water jackets, via the thermostat housing and the water pump, the cooling water that has been returned from a radiator, cooling water discharge passage for discharging into the radiator the cooling water that has passed through the water jackets, and a bypass passage for returning to the thermostat housing the cooling water that has passed through the water jackets, while bypassing the radiator. This cooling water passage unit is detachably mounted as a unit on an engine main body. Thus, the arrangement allows the engine cooling system to be made compact.

Abstract: A bridge node converts a MAC frame addressed to a station node into a RPR MAC frame and thus transmits it, and encapsulates a MAC frame addressed a station being located the outside of a ring and connected to other bridge node into the RPR MAC frame, and transmits it. The bridge node thereby receives a RPR MAC frame into which the MAC frame is encapsulated, and the station node receives the RPR MAC frame that the MAC frame is not encapsulated.

Abstract: A plurality of recording subunits connected to a control apparatus are displayed on a GUI screen as a connected-apparatus list. From this list, the user selects a recording subunit on which data is to be recorded and an option, either simultaneous recording or continuous recording, from a recording option on the GUI screen. The control apparatus establishes a transmission route to the selected recording subunit according to the instruction, either simultaneous recording or continuous recording, selected from the recording option.

Abstract: In a plasma film-forming apparatus which includes a film-forming chamber in which a substrate is arranged, a film-forming gas introducing pipe connected to a supply source of a film-forming gas at its first end, a shower plate through numerous holes of which a second end of said film-forming gas introducing pipe communicate with said film-forming chamber, film-gas exciting means for exciting film-forming gas introduced through said shower plate into said film-forming chamber, to form a film on the surface of said substrate with the chemical reaction, radicals-producing means which excites said cleaning gas and produces radicals, and cleaning-gas introducing means which introduces said cleaning gas containing said radicals into said film-forming chamber, the improvement in which said cleaning-gas introducing means communicate directly with said film-forming chamber.

Abstract: An engine cooling water passage structure includes a cooling water passage unit that is formed by integrating a water pump for supplying cooling water, a thermostat housing for housing a thermostat, a gas/liquid separation chamber for separating air from the cooling water, cooling water supply passages for supplying to water jackets, via the thermostat housing and the water pump, the cooling water that has been returned from a radiator, cooling water discharge passage for discharging into the radiator the cooling water that has passed through the water jackets, and a bypass passage for returning to the thermostat housing the cooling water that has passed through the water jackets, while bypassing the radiator. This cooling water passage unit is detachably mounted as a unit on an engine main body. Thus, the arrangement allows the engine cooling system to be made compact.

Abstract: In a plasma film-forming apparatus which includes a film-forming chamber in which a substrate is arranged, a film-forming gas introducing pipe connected to a supply source of a film-forming gas at its first end, a shower plate through numerous holes of which a second end of said film-forming gas introducing pipe communicate with said film-forming chamber, film-gas exciting means for exciting film-forming gas introduced through said shower plate into said film-forming chamber, to form a film on the surface of said substrate with the chemical reaction, radicals-producing means which excites said cleaning gas and produces radicals, and cleaning-gas introducing means which introduces said cleaning gas containing said radicals into said film-forming chamber, the improvement in which said cleaning-gas introducing means communicate directly with said film-forming chamber.

Abstract: An image forming apparatus includes a table top formed above a paper discharge area. The paper discharge area is formed on a top surface of a main body of the image forming apparatus. Support members are provided on the top surface of the main body of the image forming apparatus, and the table top is supported by the support members. This structure allows the area above the paper discharge area on the top surface of the image forming apparatus not to be wasted and to be efficiently utilized.

Abstract: There is provided a stainless steel sheet material, used for a semiconductor manufacturing device, to which it difficult for fine dust to be attached and from the surface of which the attaching dust can be easily washed away. Also, there is provided a method of manufacturing the stainless steel sheet material. A stainless steel sheet material characterized in that: the number of pinholes, the area of each pinhole exceeding 0.25 mm2, in the area of 10 cm2 on the surface of a skinpass-rolled stainless steel sheet material is not more than 10; and the average surface roughness Ra on the center line in the direction perpendicular to the rolling direction is not more than 0.15 &mgr;m. A method of manufacturing a stainless steel sheet material comprising the steps of: annealing a stainless steel cold-rolled sheet in a heat-treatment furnace having no support rollers in a temperature region exceeding 600° C.

Abstract: By reaction of halogenated organic compounds with at least one amino acid compound selected from a group consisting of amino acid, polyamino acid, amino acid salts and polyamino acid salts under heating, halogenated organic compounds such as dioxins contained in soil can be easily and effectively decomposed. By adding and mixing the amino acid compound to the halogenated organic compounds, followed by adding and mixing of a water-absorbing agent thereto and subsequent heating, an effective decomposition treatment can be carried out with excellent operation properties, preventing lumping and deposition of the treated material. A method for decomposing halogenated organic compounds in which the amino acid compound is added and mixed with solid material such as soil contaminated with halogenated organic compounds, followed by adding and mixing of a water-absorbing agent and subsequent heating of resultant mixture to decompose halogenated organic compounds.

Abstract: A plurality of wires are stretched in parallel through wire supplying-winding apparatuses and wire-tension adjusting apparatuses. A semiconductor-crystal bar is affixed on an ascent/descent table via a feeding table. The ascent/descent table is capable of being driven to ascend or descend by the ascent/descent apparatus. The wires and the semiconductor-crystal bar are dipped into a high-insulation oil, and discharging is created therebetween to perform cutting. If the resistance of the semiconductor-crystal bar exceeds 1 .OMEGA..multidot.cm, used inert gas is filled into a space within the interior space of an airtight vessel. Then, the high-insulation oil is heated by heaters and is kept at a temperature higher than 150.degree. C. to reduce the resistance of the semiconductor-crystal bar. Therefore, cutting is easily performed. The used inert gas can prevent fire from occurring due to the flaming of the high-insulation oil.

Abstract: An SiO.sub.2 passivation film is formed on a surface of a substrate made of a plastic material by plasma chemical vapor deposition (CVD) process in which organic oxysilane is used as a raw gas. Instead of a reactive gas having an ashing effect, Ar, He or NH.sub.3 is used as a reactive gas which serves as an auxiliary for decomposing the raw gas at a temperature not greater than a temperature at which the substrate is thermally deformed (i.e., about 250.degree. C.). The ashing of the substrate by oxygen or hydrogen radicals is thus prevented.

Abstract: A passivation film is formed by plasma CVD process in which organic oxysilane is used as a raw gas. When an SiO.sub.2 film as the passivation film is formed on a surface of a substrate, Ar, He or NH.sub.3 gas is used as a reactive gas which serves as an auxiliary for decomposing the raw gas. Ashing of the substrate by oxygen or hydrogen radicals is thus prevented. Fluorine group gas of CF.sub.4 or NF.sub.3 may be added to the reactive gas. The SiO.sub.2 film as a passivation film as described above may be formed first as an initial passivation film and then another passivation film may be formed on top of the initial passivation film by using a reactive gas having an ashing effect such as O.sub.2, N.sub.2 O, O.sub.3 and H.sub.2.

Abstract: The present invention relates to a drug composition in which the solubility and the dissolution rate of a drug having low water solubility are improved by incoroprating therein a low molecular weight chitosan in an amount of from 0.2 to 10 parts by weight per one part by weight of the poorly water-soluble drug. As the low molecular weight chitosan, those having a weight average molecular weight in the range from 500 to 50,000 and soluble in water were employed. This drug composition is prepared by mixing the components intimately so as to obtain a homogeneous dispersion of the low molecular weight chitosan with the mass of the composition.The drug composition according to the invention can be worked up into various preparation forms, such as, granules etc., as medicaments for administration to living organisms in which the bioabsorptivity and biouptake are improved.

Abstract: An in-line type chemical vapor deposition apparatus having an etching device for cleaning at least substrate holders, which is provided downstream of the substrate unloading station in which the processed substrates are removed from the substrate holders at atmosphere pressure. The etching device comprises a plasma etching means in which the substrate holders are positioned on an anode side or a dry-etching means in which the substrate holders are positioned on a cathode side, thereby reducing the down time of the apparatus without any influence of an exfoliation of an adhered film from the substrate holders or other portions.

Abstract: A magnetic recording medium suitable for high-density recording which comprises a non-magnetic substrate disk, at least one magnetic layer and at least one protective layer, the magnetic layer and the protective layer being formed in succession on the non-magnetic substrate disk, wherein the non-magnetic substrate disk comprises a glass substrate and at least one non-magnetic metallic film provided on the glass substrate, and the non-magnetic metallic film is provided on a surface thereof with a multitude of fine concentric grooves.

Abstract: A method of removing endotoxin from a solution containing only endotoxin as a absorbed material, wherein the pH value of the solution is adjusted to pH 9 or lower than it, and subsequently, the solution is passed through a column packed with a crosslinked granular chitosan.

Abstract: A magnetic recording member with improved coercive force is obtained by:(a) forming by sputtering or Cr film on a non-magnetic substrate;(b) forming by sputtering an epitaxially grown film of a Co alloy containing at least Cr as an additional metal on the Cr film formed in the step (a);and applying a negative bias voltage to the substrate during at least one of steps (a) and (b).The coercive force of the magnetic recording member is further increased when high-frequency sputtering is used instead of direct current sputtering.

Abstract: A magnetic recording member having high coercive force, comprising:(a) a non-magnetic substrate;(b) a Cr base film formed on said substrate by a film forming process; and(c) a Co alloy film formed on said Cr base film by the same film forming process as in (b),wherein said Cr base film contains in addition to Cr at least one additional element selected from the group consisting of rare earth elements, Si, Cu, P and Ge, and wherein said Co alloy film is formed by continuous operation of said film forming process without interruption after completion of the formation of said Cr base film.