Patents by Inventor Masanori Nagase

Masanori Nagase has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20210270968
    Abstract: A range-measuring device encompasses a light emitter, a light-receiving region for receiving a reflected light of the pulsed light from the target, a driver for transmitting control signals to the light emitter and for transmitting transfer signals to distributing gates, providing offset periods in between on-periods of the transfer signals, distributing gates distribute signal charges to charge-accumulation regions, a range calculator configured to calculate ranges to the target, by using the signals transmitted from the charge-accumulation regions, and a control processor configured to generate control signals for controlling operations of the driver from calculated result delivered from the range calculator, and to transmit the control signals to the driver.
    Type: Application
    Filed: December 31, 2020
    Publication date: September 2, 2021
    Applicant: BROOKMAN TECHNOLOGY, INC.
    Inventor: Masanori NAGASE
  • Publication number: 20210255286
    Abstract: A range-measuring device encompasses N charge-distributing gates configured to distribute the signal charges toward N charge-transfer routes, a charge-exhausting gate for exhausting unwanted charges other than the signal charges, N charge-accumulation regions for accumulating the signal charges, a driver for transmitting drive signals to the N charge-distributing gates and the charge-exhausting gate, a readout-amplifier for reading out output signals corresponding to the signal charges accumulated in the N charge-accumulation regions, an arithmetic logic circuit configured to execute a job for calculating ranges to the target after receiving the output signals transmitted through the readout-amplifier.
    Type: Application
    Filed: April 12, 2021
    Publication date: August 19, 2021
    Applicant: Brookman Technology, Inc.
    Inventor: Masanori NAGASE
  • Patent number: 8179585
    Abstract: In the production of optical devices or the like utilizing an intersubband transition of a coupled quantum well, a quantum well structure having strong coupling is provided. In addition, a coupled well structure of excellent productivity capable of avoiding thinning of coupling barrier layer for strengthening the coupling is provided. In the semiconductor coupled well structure of the present invention, a coupled quantum well structure disposed on the semiconductor single crystal substrate includes a coupling barrier layer 1a disposed between two or more quantum well layers 2a and 2b, wherein the coupling barrier layer 1a has an energy barrier that is smaller than an excitation level (E4 and E3) and is larger than a ground level (E2 and E1).
    Type: Grant
    Filed: August 17, 2007
    Date of Patent: May 15, 2012
    Assignee: National Institute of Advanced Industrial Science and Technology
    Inventors: Masanori Nagase, Ryoichi Akimoto, Hiroshi Ishikawa
  • Patent number: 8030608
    Abstract: A backside illuminated imaging device performs imaging by illuminating light from a back side of a p substrate to generate electric charges in the substrate based on the light and reading out the electric charges from a front side of the substrate. The device includes n layers located in the substrate and on an identical plane near a front side surface of the substrate and accumulating the electric charges; n+ layers between the respective n layers and the front side of the substrate, the n+ layers having an exposed surface exposed on the front side surface of the substrate and functioning as overflow drains for discharging unnecessary electric charges accumulated in the n layers; p+ layers between the respective n+ layers and the n layers and functioning as overflow barriers of the overflow drains; and an electrode connected to the exposed surface of each of the n+ layers.
    Type: Grant
    Filed: June 23, 2010
    Date of Patent: October 4, 2011
    Assignee: FujiFilm Corporation
    Inventors: Shinji Uya, Masanori Nagase, Yosuke Nakahashi, Toru Hachiya
  • Publication number: 20110031574
    Abstract: A solid-state imaging device includes: a first well layer which is provided in a semiconductor substrate, has a conductivity type that is opposite to a conductivity type of the semiconductor substrate, and includes photoelectric conversion elements and a reading unit for reading signals corresponding to charges generated in the respective photoelectric conversion elements; a second well layer provided in the semiconductor substrate and having the conductivity type that is opposite to the conductivity type of the semiconductor substrate; and a light shield layer which is provided over an area where the photoelectric conversion elements are provided, has openings over the respective photoelectric conversion elements, and has contact portions that are in contact with the second well layer.
    Type: Application
    Filed: February 3, 2010
    Publication date: February 10, 2011
    Applicant: FUJIFILM Corporation
    Inventor: Masanori Nagase
  • Publication number: 20110031573
    Abstract: A solid-state imaging device includes: photodetection cells formed in a semiconductor substrate and including respective photodetection photoelectric conversion elements for detecting light coming form a subject; black level detection cells formed in the semiconductor substrate, for detecting a black level; and a light shield layer which is formed over an area where the photodetection cells and the black level detection cells are formed, has openings over the respective photodetection photoelectric conversion elements of the photodetection cells, has no openings over the black level detection cells, and has contact portions that are in contact with the semiconductor substrate, the contact portions being formed only in or in the vicinity of plan-view areas of the black level detection cells, respectively.
    Type: Application
    Filed: February 3, 2010
    Publication date: February 10, 2011
    Applicant: FUJIFILM Corporation
    Inventor: Masanori NAGASE
  • Publication number: 20100291730
    Abstract: A backside illuminated imaging device performs imaging by illuminating light from a back side of a p substrate to generate electric charges in the substrate based on the light and reading out the electric charges from a front side of the substrate. The device includes n layers located in the substrate and on an identical plane near a front side surface of the substrate and accumulating the electric charges; n+ layers between the respective n layers and the front side of the substrate, the n+ layers having an exposed surface exposed on the front side surface of the substrate and functioning as overflow drains for discharging unnecessary electric charges accumulated in the n layers; p+ layers between the respective n+ layers and the n layers and functioning as overflow barriers of the overflow drains; and an electrode connected to the exposed surface of each of the n+ layers.
    Type: Application
    Filed: June 23, 2010
    Publication date: November 18, 2010
    Inventors: Shinji UYA, Masanori Nagase, Yosuke Nakahashi, Toru Hachiya
  • Publication number: 20100245969
    Abstract: In the production of optical devices or the like utilizing an intersubband transition of a coupled quantum well, a quantum well structure having strong coupling is provided. In addition, a coupled well structure of excellent productivity capable of avoiding thinning of coupling barrier layer for strengthening the coupling is provided. In the semiconductor coupled well structure of the present invention, a coupled quantum well structure disposed on the semiconductor single crystal substrate includes a coupling barrier layer 1a disposed between two or more quantum well layers 2a and 2b, wherein the coupling barrier layer 1a has an energy barrier that is smaller than an excitation level (E4 and E3) and is larger than a ground level (E2 and E1).
    Type: Application
    Filed: August 17, 2007
    Publication date: September 30, 2010
    Inventors: Masanori Nagase, Ryoichi Akimoto, Hiroshi Ishikawa
  • Patent number: 7804534
    Abstract: A solid-state imaging device comprises: a semiconductor substrate; a plurality of photoelectric conversion elements formed in a surface portion of the semiconductor substrate in the form of a two-dimensional array so as to comprise a plurality of sets, each comprising a subset of the photoelectric conversion elements arranged in one direction; charge transfer paths each formed at a side portion of the subset of the photoelectric conversion elements to cause a signal charge of the photoelectric conversion elements be read out when a readout pulse is applied and cause the signal charge which has been read out to be transferred when a transfer pulse is applied; and an electrically conductive light shielding film which is laminated on a surface of the semiconductor substrate through an insulating layer and has openings immediately above each of the photoelectric conversion elements.
    Type: Grant
    Filed: February 14, 2007
    Date of Patent: September 28, 2010
    Assignee: FUJIFILM Corporation
    Inventors: Masanori Nagase, Shu Takahashi, Jiro Matsuda, Mitsuru Iwata, Shinji Uya
  • Patent number: 7781715
    Abstract: A backside illuminated imaging device performs imaging by illuminating light from a back side of a p substrate to generate electric charges in the substrate based on the light and reading out the electric charges from a front side of the substrate. The device includes n layers located in the substrate and on an identical plane near a front side surface of the substrate and accumulating the electric charges; n+ layers between the respective n layers and the front side of the substrate, the n+ layers having an exposed surface exposed on the front side surface of the substrate and functioning as overflow drains for discharging unnecessary electric charges accumulated in the n layers; p+ layers between the respective n+ layers and the n layers and functioning as overflow barriers of the overflow drains; and an electrode connected to the exposed surface of each of the n+ layers.
    Type: Grant
    Filed: September 17, 2007
    Date of Patent: August 24, 2010
    Assignee: Fujifilm Corporation
    Inventors: Shinji Uya, Masanori Nagase, Yosuke Nakahashi, Toru Hachiya
  • Patent number: 7759151
    Abstract: A solid state imaging apparatus comprises: a semiconductor substrate; a photoelectric converting portion on the semiconductor substrate; a light shielding film in a region excluding a light receiving surface of the photoelectric converting portion; and a P-type impurity layer between a lower surface of the light shielding film and the semiconductor substrate.
    Type: Grant
    Filed: January 17, 2008
    Date of Patent: July 20, 2010
    Assignee: Fujifilm Corporation
    Inventors: Jiro Matsuda, Masanori Nagase, Shu Takahashi
  • Patent number: 7750376
    Abstract: A CCD type solid-state imaging device includes: a photoelectric conversion element (n layer 2, p layer 3) formed in a semiconductor substrate 1; a charge transfer channel 5 that transfers electric charges generated in the photoelectric conversion element; a charge read region 6 that reads out the electric charges accumulated in the photoelectric conversion element into the charge transfer channel 5; and a charge read electrode 8 formed above the charge read region 6 with a gate insulating film 10 disposed therebetween. The charge read electrode 8 controls the reading out of the electric charges into the charge transfer channel 5. A gap is formed between the photoelectric conversion element and the charge read electrode 8 in plan view.
    Type: Grant
    Filed: May 25, 2007
    Date of Patent: July 6, 2010
    Assignee: Fujifilm Corporation
    Inventors: Taketo Watanabe, Masanori Nagase
  • Patent number: 7714401
    Abstract: A solid state imaging device comprises: a photoelectric converting portion provided on a semiconductor substrate; a charge transfer path, formed in an adjacent position to the photoelectric converting portion, that receives a signal charge generated in the photoelectric converting portion and transfers the signal charge in a predetermined direction; and a gate electrode that transfers the signal charge from the photoelectric converting portion to the charge transfer path, wherein the gate electrode comprises polysilicon having a different conductive type from that of a semiconductor region forming a charge storing portion of the charge transfer path.
    Type: Grant
    Filed: December 7, 2007
    Date of Patent: May 11, 2010
    Assignee: Fujifilm Corporation
    Inventors: Masanori Nagase, Jiro Matsuda, Tsuneo Sasamoto, Toshiaki Hayakawa
  • Patent number: 7679668
    Abstract: A first silicon oxide film is formed on the surface of the semiconductor substrate in an area of a vertical transfer channel and a read gate contiguous with each other, and a silicon nitride film is formed on the first silicon oxide film. The silicon nitride film is isotropically etched by using a resist pattern formed on the silicon nitride film as a mask. A second silicon oxide film is formed on the surface of the etched silicon nitride film to form an insulating film containing silicon oxide films and a silicon nitride film. A photoelectric conversion element contiguous with the read gate on the opposite side of the vertical transfer channel is formed. The isotropical etching makes the silicon nitride film cover the vertical transfer channel, extend over the read gate, and have a tapered sidewall. A high quality solid state image pickup device can be manufactured.
    Type: Grant
    Filed: September 14, 2006
    Date of Patent: March 16, 2010
    Assignee: Fujifilm Corporation
    Inventors: Masanori Nagase, Kaichiro Chiba
  • Patent number: 7605059
    Abstract: A semiconductor device comprises: a MOS transistor including: a semiconductor substrate; a source region, formed in the semiconductor substrate, that comprises an impurity of a first conductive type; a drain region, formed in the semiconductor substrate, that comprises an impurity of the first conductive type; and a gate electrode, formed through a gate insulating film on the semiconductor substrate, between the source region and the drain region; an impurity region of the first conductive type formed in the semiconductor substrate; an impurity region of a second conductive type to be opposite to the first conductive type formed in the semiconductor substrate; and a wiring provided to connect each of the impurity region of the first conductive type and the impurity region of the second conductive type to the gate electrode.
    Type: Grant
    Filed: May 25, 2007
    Date of Patent: October 20, 2009
    Assignee: Fujifilm Corporation
    Inventors: Noriaki Suzuki, Masanori Nagase
  • Publication number: 20080283726
    Abstract: A backside illuminated imaging device performs imaging by illuminating light from a back side of a p substrate to generate electric charges in the substrate based on the light and reading out the electric charges from a front side of the substrate. The device includes n layers located in the substrate and on an identical plane near a front side surface of the substrate and accumulating the electric charges; n+ layers between the respective n layers and the front side of the substrate, the n+ layers having an exposed surface exposed on the front side surface of the substrate and functioning as overflow drains for discharging unnecessary electric charges accumulated in the n layers; p+ layers between the respective n+ layers and the n layers and functioning as overflow barriers of the overflow drains; and an electrode connected to the exposed surface of each of the n+ layers.
    Type: Application
    Filed: September 17, 2007
    Publication date: November 20, 2008
    Inventors: Shinji UYA, Masanori Nagase, Yosuke Nakahashi, Toru Hachiya
  • Publication number: 20080280388
    Abstract: A CCD type solid-state imaging device is provided and includes: photodiodes (PD) in a light receiving area of a semiconductor substrate; vertical charge transfer paths; a horizontal charge transfer path; channel stops including linear high density impurity regions for separating mutually adjoining sets from each other, each set including a PD array and a vertical charge transfer path; a first light-shielding film which is stacked on the light receiving area and has openings in the respective PDs, and also to which a control pulse voltage is applied; a second light-shielding film spaced from the first light-shielding film for covering a connecting portion between the horizontal charge transfer path and light receiving area; and a contact portion of a high density impurity region for connecting the channel stops to the second light-shielding film and also for applying a reference potential to the channel stops.
    Type: Application
    Filed: March 28, 2008
    Publication date: November 13, 2008
    Inventors: Kenji Ishida, Masanori Nagase
  • Publication number: 20080173905
    Abstract: A solid state imaging device comprises: a photoelectric converting portion provided on a semiconductor substrate; a charge transfer path, formed in an adjacent position to the photoelectric converting portion, that receives a signal charge generated in the photoelectric converting portion and transfers the signal charge in a predetermined direction; and a gate electrode that transfers the signal charge from the photoelectric converting portion to the charge transfer path, wherein the gate electrode comprises polysilicon having a different conductive type from that of a semiconductor region forming a charge storing portion of the charge transfer path.
    Type: Application
    Filed: December 7, 2007
    Publication date: July 24, 2008
    Inventors: Masanori NAGASE, Jiro Matsuda, Tsuneo Sasamoto, Toshiaki Hayakawa
  • Publication number: 20080173902
    Abstract: A solid state imaging apparatus comprises: a semiconductor substrate; a photoelectric converting portion on the semiconductor substrate; a light shielding film in a region excluding a light receiving surface of the photoelectric converting portion; and a P-type impurity layer between a lower surface of the light shielding film and the semiconductor substrate.
    Type: Application
    Filed: January 17, 2008
    Publication date: July 24, 2008
    Inventors: Jiro MATSUDA, Masanori Nagase, Shu Takahashi
  • Publication number: 20080055449
    Abstract: A solid-state imaging device comprises: a semiconductor substrate; a plurality of photoelectric conversion elements formed in a surface portion of the semiconductor substrate in the form of a two-dimensional array so as to comprise a plurality of sets, each comprising a subset of the photoelectric conversion elements arranged in one direction; charge transfer paths each formed at a side portion of the subset of the photoelectric conversion elements to cause a signal charge of the photoelectric conversion elements be read out when a readout pulse is applied and cause the signal charge which has been read out to be transferred when a transfer pulse is applied; and an electrically conductive light shielding film which is laminated on a surface of the semiconductor substrate through an insulating layer and has openings immediately above each of the photoelectric conversion elements.
    Type: Application
    Filed: February 14, 2007
    Publication date: March 6, 2008
    Inventors: Masanori Nagase, Shu Takahashi, Jiro Matsuda, Mitsuru Iwata, Shinji Uya