Abstract: A solid-state imaging device comprises: a semiconductor substrate; a plurality of photoelectric conversion elements formed in a surface portion of the semiconductor substrate in the form of a two-dimensional array so as to comprise a plurality of sets, each comprising a subset of the photoelectric conversion elements arranged in one direction; charge transfer paths each formed at a side portion of the subset of the photoelectric conversion elements to cause a signal charge of the photoelectric conversion elements be read out when a readout pulse is applied and cause the signal charge which has been read out to be transferred when a transfer pulse is applied; and an electrically conductive light shielding film which is laminated on a surface of the semiconductor substrate through an insulating layer and has openings immediately above each of the photoelectric conversion elements.

Abstract: A semiconductor device comprises: an MOS transistor including: a semiconductor substrate; a source region, formed in the semiconductor substrate, that comprises an impurity of a first conductive type; a drain region, formed in the semiconductor substrate, that comprises an impurity of the first conductive type; and a gate electrode, formed through a gate insulating film on the semiconductor substrate, between the source region and the drain region; an impurity region of the first conductive type formed in the semiconductor substrate; an impurity region of a second conductive type to be opposite to the first conductive type formed in the semiconductor substrate; and a wiring provided to connect each of the impurity region of the first conductive type and the impurity region of the second conductive type to the gate electrode.

Abstract: A CCD type solid-state imaging device includes: a photoelectric conversion element (n layer 2, p layer 3) formed in a semiconductor substrate 1; a charge transfer channel 5 that transfers electric charges generated in the photoelectric conversion element; a charge read region 6 that reads out the electric charges accumulated in the photoelectric conversion element into the charge transfer channel 5; and a charge read electrode 8 formed above the charge read region 6 with a gate insulating film 10 disposed therebetween. The charge read electrode 8 controls the reading out of the electric charges into the charge transfer channel 5. A gap is formed between the photoelectric conversion element and the charge read electrode 8 in plan view.

Abstract: PROBLEM To provide a high quality solid state image pickup device. SOLUTION Impurities are implanted into a semiconductor substrate to form vertical transfer channels for transferring electric charges in a first direction and to form a drain near each of the vertical transfer channels via a gate which forms a barrier. A first silicon oxide film, a silicon nitride film and a second silicon oxide film are deposited in this order from the bottom, on the surfaces of the vertical transfer channels, gates and drains. A first layer vertical transfer electrode is formed on the second silicon oxide film above the vertical transfer channel, and an insulating film if formed on the surface of the first layer vertical transfer electrode. The second silicon oxide film and silicon nitride film are etched in such a manner that the silicon nitride film covers the vertical transfer channel and extends above the gate excepting a portion near the drain.

Abstract: A CCD type solid-state imaging device is provided and includes: photodiodes (PD) in a light receiving area of a semiconductor substrate; vertical charge transfer paths; a horizontal charge transfer path; channel stops including linear high density impurity regions for separating mutually adjoining sets from each other, each set including a PD array and a vertical charge transfer path; a first light-shielding film which is stacked on the light receiving area and has openings in the respective PDs, and also to which a control pulse voltage is applied; a second light-shielding film spaced from the first light-shielding film for covering a connecting portion between the horizontal charge transfer path and light receiving area; and a contact portion of a high density impurity region for connecting the channel stops to the second light-shielding film and also for applying a reference potential to the channel stops.

Abstract: A first silicon oxide film is formed on the surface of the semiconductor substrate in an area of a vertical transfer channel and a read gate contiguous with each other, and a silicon nitride film is formed on the first silicon oxide film. The silicon nitride film is isotropically etched by using a resist pattern formed on the silicon nitride film as a mask. A second silicon oxide film is formed on the surface of the etched silicon nitride film to form an insulating film containing silicon oxide films and a silicon nitride film. A photoelectric conversion element contiguous with the read gate on the opposite side of the vertical transfer channel is formed. The isotropical etching makes the silicon nitride film cover the vertical transfer channel, extend over the read gate, and have a tapered sidewall. A high quality solid state image pickup device can be manufactured.

Abstract: PROBLEM To provide a high quality solid state image pickup device. SOLUTION Impurities are implanted into a semiconductor substrate to form vertical transfer channels for transferring electric charges in a first direction and to form a drain near each of the vertical transfer channels via a gate which forms a barrier. A first silicon oxide film, a silicon nitride film and a second silicon oxide film are deposited in this order from the bottom, on the surfaces of the vertical transfer channels, gates and drains. A first layer vertical transfer electrode is formed on the second silicon oxide film above the vertical transfer channel, and an insulating film if formed on the surface of the first layer vertical transfer electrode. The second silicon oxide film and silicon nitride film are etched in such a manner that the silicon nitride film covers the vertical transfer channel and extends above the gate excepting a portion near the drain.

Abstract: The invention relates to a process for preparing prilled bisphenol A by granulation which comprises adding compounds soluble in molten bisphenol A, not affecting adversely the melt color of bisphenol A to any significant extent, and have a melting point of 60.degree. C. or more to bisphenol A and granulating and also to a process which comprises adding the reaction mother liquor or cyrstallization mother liquor produced in the manufacturing step of bisphenol A to bisphenol A or the adduct of bispheol A and phenol or a mixture of bispheol A and phenol, removing the phenol, and granulating. The processes yield prilled bispheol A which have high strength and resist powdering.