Abstract: An object of the present invention is to prevent a sensitivity difference between pixels. There are disposed plural unit cells each including plural photodiodes with plural transfer MOSFETs arranged respectively corresponding to the plural photodiodes, and a common MOSFET that amplifies and outputs signals read from the plural photodiodes. The unit cell includes reset and selecting MOSFETs. Within the unit cell, each pair of photodiode and corresponding transfer MOSFET has translational symmetry with respect to one another.

Abstract: A photoelectric conversion device includes a current consumption circuit configured to consume current such that a difference between a current consumption during a blanking period and a current consumption during a standby period is reduced.

Abstract: A sensor has first pixels each including one of red, green and blue color filters, and second pixels each including one of red, green and blue color filters. In the first and second pixels including color filters of the same color, light transmittances of the light transmissive portions are different. A light transmittance of the light transmissive portion of the first pixel including the red color filter is lower than that of the light transmissive portion of the first pixel including the green color filter, and a light transmittance of the transmissive portion of the first pixel including the green color filter is lower than that of the light transmissive portion of the first pixel including the blue color filter.

Abstract: An object of the present invention is to prevent a sensitivity difference between pixels. There are disposed plural unit cells each including plural photodiodes with plural transfer MOSFETs arranged respectively corresponding to the plural photodiodes, and a common MOSFET that amplifies and outputs signals read from the plural photodiodes. The unit cell includes reset and selecting MOSFETs. Within the unit cell, each pair of photodiode and corresponding transfer MOSFET has translational symmetry with respect to one another.

Abstract: A readout circuit includes: an amplifier (408); and offset controllers (415 and 416) configured to set an output offset voltage of the amplifier, wherein the readout circuit operates in first and second modes, in the first mode, a first voltage, and thereafter a second voltage lower than the first voltage, are input into the amplifier, in the second mode, a third voltage, and thereafter a fourth voltage higher than the third voltage, are input into the amplifier, and the offset controller switches the output offset voltage of the amplifier, between the first and second modes.

Abstract: Provided is a solid-state imaging apparatus including plural pixels each including a first pixel connecting transistor and a second pixel connecting transistor each connected at one end to a floating diffusion node, a first pixel connecting line connected to the other end of the first pixel connecting transistor, and a second pixel connecting line connected to the other end of the second pixel connecting transistor. The first pixel connecting line provided in a first pixel of the plural pixels is connected to the second pixel connecting line provided in a second pixel of the plural pixels, and the second pixel connecting line provided in the first pixel is connected to the first pixel connecting line provided in a third pixel of the plural pixels.

Abstract: An object of the present invention is to prevent a sensitivity difference between pixels. There are disposed plural unit cells each including plural photodiodes with plural transfer MOSFETs arranged respectively corresponding to the plural photodiodes, and a common MOSFET that amplifies and outputs signals read from the plural photodiodes. The unit cell includes reset and selecting MOSFETs. Within the unit cell, each pair of photodiode and corresponding transfer MOSFET has translational symmetry with respect to one another.

Abstract: In a semiconductor device including unit cells which are aligned in one direction, wirings disposed along end portions in the one direction have high Young's moduli.

Abstract: The present invention provides a photoelectric conversion apparatus capable of preventing dark current noise due to a leakage current of a transistor and improving the signal-to-noise ratio. A photoelectric conversion apparatus includes a pixel which in turn includes a photoelectric conversion element adapted to convert light into an electric charge, buffers whose input terminals are connected to an output terminal of the photoelectric conversion element and which buffer a voltage corresponding to the electric charge of the photoelectric conversion element, a capacitor whose first electrode is connected to an output terminal of the photoelectric conversion element, a first switch connected between a second electrode of the capacitor and output terminals of the buffers, and a second switch connected between the second electrode of the capacitor and a fixed voltage node.

Abstract: An amplification circuit includes an amplifier, a first capacitor including a first terminal connected to an input terminal of the amplifier, a second capacitor including a first terminal connected to the input terminal of the amplifier and a second terminal connected to an output terminal of the amplifier, and a correction unit configured to correct a difference in bias dependency between capacitance values of the first and second capacitors.

Abstract: A scanning circuit, comprising first signal lines, second signal lines, third signal lines, a drive unit configured to drive the first signal lines, first buffers configured to drive the second signal lines in accordance with signals of the first signal lines, second buffers configured to drive the third signal lines in accordance with the signals of the first signal lines, and a shift register having a first part to be driven by signals of the second signal lines and a second part to be driven by signals of the third signal lines, wherein the first to third signal lines include two signal lines arranged in parallel to each other and configured to transmit the in-phase signals.

Abstract: Provided is a solid-state imaging apparatus that is capable of preventing a harmful influence due to noise generated in a control line. The solid-state imaging apparatus includes: a plurality of pixels each including a photoelectric conversion unit for photoelectric converting to generate a signal; control lines for supplying control signals for driving the pixels; driving buffers for driving the control lines; and switching units for switching between a first path for supplying power source voltages from power source circuits to power source terminals of the driving buffers and a second path for supplying power source voltages from capacitors to the power source terminals of the driving buffers.

Abstract: A solid state image pickup device which can prevent color mixture by using a layout of a capacitor region provided separately from a floating diffusion region and a camera using such a device are provided. A photodiode region is a rectangular region including a photodiode. A capacitor region includes a carrier holding unit and is arranged on one side of the rectangle of the photodiode region as a region having a side longer than the one side. In a MOS unit region, an output unit region including an output unit having a side longer than the other side which crosses the one side of the rectangle of the photodiode region is arranged on the other side. A gate region and the FD region are arranged between the photodiode region and the capacitor region.

Abstract: The present invention provides a photoelectric conversion apparatus capable of preventing dark current noise due to a leakage current of a transistor and improving the signal-to-noise ratio. A photoelectric conversion apparatus includes a pixel which in turn includes a photoelectric conversion element adapted to convert light into an electric charge, buffers whose input terminals are connected to an output terminal of the photoelectric conversion element and which buffer a voltage corresponding to the electric charge of the photoelectric conversion element, a capacitor whose first electrode is connected to an output terminal of the photoelectric conversion element, a first switch connected between a second electrode of the capacitor and output terminals of the buffers, and a second switch connected between the second electrode of the capacitor and a fixed voltage node.

Abstract: A sensor has first pixels each including one of red, green and blue color filters, and second pixels each including one of red, green and blue color filters. In the first and second pixels including color filters of the same color, light transmittances of the light transmissive portions are different. A light transmittance of the light transmissive portion of the first pixel including the red color filter is lower than that of the light transmissive portion of the first pixel including the green color filter, and a light transmittance of the transmissive portion of the first pixel including the green color filter is lower than that of the light transmissive portion of the first pixel including the blue color filter.

Abstract: A photoelectric conversion device includes a pixel output line, a pixel which outputs a signal to the pixel output line, an amplifier unit which amplifies the signal output to the pixel output line, and a holding capacitor which holds the signal output from the amplifier unit. The photoelectric conversion device outputs a pixel signal based on the signal held by the holding capacitor. The amplifier unit includes a variable amplifier stage which amplifies a signal output to the pixel output line at a gain selected from a plurality of gains, and a buffer stage which amplifies the signal output from the variable amplifier stage, the amplified signal being held by the holding capacitor to hold the signal.

Abstract: A solid state image pickup device which can prevent color mixture by using a layout of a capacitor region provided separately from a floating diffusion region and a camera using such a device are provided. A photodiode region is a rectangular region including a photodiode. A capacitor region includes a carrier holding unit and is arranged on one side of the rectangle of the photodiode region as a region having a side longer than the one side. In a MOS unit region, an output unit region including an output unit having a side longer than the other side which crosses the one side of the rectangle of the photodiode region is arranged on the other side. A gate region and the FD region are arranged between the photodiode region and the capacitor region.

Abstract: There is provided an image pickup apparatus comprising a plurality of pixels each including a photoelectric conversion unit which converts incident light into an electrical signal and accumulates the electrical signal, an amplifier transistor which amplifies and outputs the signal from the photoelectric conversion unit, a transfer transistor which transfers the electrical signal accumulated in the photoelectric conversion unit to the amplifier transistor, and a processing transistor which performs predetermined processing, and a control circuit which sets the signal level supplied to the control electrode of the transfer transistor in order to turn off the transfer transistor to be lower than the signal level supplied to the control electrode of the processing transistor in order to turn off the processing transistor.

Abstract: An solid state image pickup device including a plurality of photoelectric conversion regions (PD1, PD2) for generating carriers by photoelectric conversions to accumulate the generated carriers, an amplifying unit for amplifying the carriers, being commonly provided to at least two photoelectric conversion regions, a first and a second transfer units (Tx-MOS1, Tx-MOS2) for transferring the carriers accumulated in the first and the second photoelectric conversion regions, respectively, a first and a second carrier accumulating units (Cs1, Cs2) for accumulating the carriers flowing out from the first and the second photoelectric conversion regions through a first and a second fixed potential barriers, respectively, and a third and a fourth transfer units (Cs-MOS1, Cs-MOS2) for transferring the carriers accumulated in the first and the second carrier accumulating units to the amplifying unit, respectively.

Abstract: An aspect of the present disclosure is directed to an imaging apparatus capable of reducing fluctuation in voltage in a current supply line due to fluctuation in a current consumption amount generated when an output circuit shifts from a first state to a second state, and a method for driving the imaging apparatus.