Abstract: A scanning circuit, comprising first signal lines, second signal lines, third signal lines, a drive unit configured to drive the first signal lines, first buffers configured to drive the second signal lines in accordance with signals of the first signal lines, second buffers configured to drive the third signal lines in accordance with the signals of the first signal lines, and a shift register having a first part to be driven by signals of the second signal lines and a second part to be driven by signals of the third signal lines, wherein the first to third signal lines include two signal lines arranged in parallel to each other and configured to transmit the in-phase signals.

Abstract: A readout circuit includes: an amplifier (408); and offset controllers (415 and 416) configured to set an output offset voltage of the amplifier, wherein the readout circuit operates in first and second modes, in the first mode, a first voltage, and thereafter a second voltage lower than the first voltage, are input into the amplifier, in the second mode, a third voltage, and thereafter a fourth voltage higher than the third voltage, are input into the amplifier, and the offset controller switches the output offset voltage of the amplifier, between the first and second modes.

Abstract: An image pickup device includes pixels, each including a photoelectric conversion unit and a transfer unit. The photoelectric conversion unit includes a first-conductivity-type first semiconductor region and a second-conductivity-type second semiconductor region. A second-conductivity-type third semiconductor region is formed on at least a part of a gap between a photoelectric conversion unit of a first pixel and a photoelectric conversion unit of a second pixel adjacent to the first pixel. A first-conductivity-type fourth semiconductor region having an impurity concentration higher than an impurity concentration of the first semiconductor region is formed between the photoelectric conversion unit and the third semiconductor region. A first-conductivity-type fifth semiconductor region having an impurity concentration higher than the first semiconductor region is arranged between the photoelectric conversion unit and the third semiconductor region and is arranged deeper than fourth semiconductor region.

Abstract: An object of the present invention is to prevent a sensitivity difference between pixels. There are disposed plural unit cells each including plural photodiodes 101A and 101B, plural transfer MOSFETs 102A and 102B arranged corresponding to the plural photodiodes, respectively, and a common MOSFET 104 which amplifies and outputs signals read from the plural photodiodes. Each pair within the unit cell, composed of the photodiode and the transfer MOSFET provided corresponding to the photodiode, has translational symmetry with respect to one another. Within the unit cell, there are included a reset MOSFET and selecting MOSFET.

Abstract: An image processing apparatus, for correcting a cross talk between adjacent pixels, includes: a memory unit for storing a correction parameter for reducing a cross talk signal leaked to an object pixel from an adjacent pixel, the correction parameter corresponding to a position of the object pixel; and a correcting unit for subtracting, based on the correction parameter stored in the memory unit, the cross talk signal from a pixel signal of the solid-state imaging apparatus correspondingly to a position of the pixel, wherein a number of the object pixel is at least two, and the at least two object pixels have different addresses in a horizontal direction, and different addresses in a vertical direction.

Abstract: A power supply wiring and a pad are arranged on a first wiring layer. Then, the power supply wiring and the pad are arranged so as not to be mutually overlapped. Signal wirings are arranged on a second wiring layer. Another signal wiring is arranged on a layer different from the second wiring layer. The other signal wiring is arranged below the pad so as to be overlapped with the pad. The signal wirings and the other signal wiring are mutually connected by a plug. A buffer is arranged between the pad and the other signal wiring.

Abstract: In a semiconductor device including unit cells which are aligned in one direction, wirings disposed along end portions in the one direction have high Young's moduli.

Abstract: An object of the present invention is to prevent a sensitivity difference between pixels. There are disposed plural unit cells each including plural photodiodes 101A and 101B, plural transfer MOSFETs 102A and 102B arranged corresponding to the plural photodiodes, respectively, and a common MOSFET 104 which amplifies and outputs signals read from the plural photodiodes. Each pair within the unit cell, composed of the photodiode and the transfer MOSFET provided corresponding to the photodiode, has translational symmetry with respect to one another. Within the unit cell, there are included a reset MOSFET and selecting MOSFET.

Abstract: An amplification circuit includes an amplifier, a first capacitor including a first terminal connected to an input terminal of the amplifier, a second capacitor including a first terminal connected to the input terminal of the amplifier and a second terminal connected to an output terminal of the amplifier, and a correction unit configured to correct a difference in bias dependency between capacitance values of the first and second capacitors.

Abstract: A solid-state imaging apparatus is provided that including a plurality of amplifiers each one amplifying a signal from each one of a plurality of pixels. The amplifier including first and second field effect transistors, gate electrodes of which are connected to the same voltage node (VBL); and a first wiring connected between the voltage node and the gate electrodes of the first and second field effect transistors. The first and second field effect transistors are arranged in a direction perpendicular to a direction in which the plurality of amplifiers is arranged. Material of the first wiring has a resistivity smaller than that of the gate electrodes of the first and second field effect transistors.

Abstract: A photoelectric conversion device prevents a pseudo signal caused by the parasitic capacitance of a transfer switch from being input to an amplifier. A photoelectric conversion device (50) includes a pixel (10) which outputs a signal to a signal line (107), an amplifier which amplifies the signal supplied via the signal line (107), and an isolation switch (121) inserted between a signal line (108) and the input node of the amplifier. The pixel (10) includes a photodiode, a floating diffusion (FD), a transfer switch which transfers the charge of the photodiode to the FD, and an amplification transistor which outputs a signal to a signal line (109) in accordance with the potential of the FD. The isolation switch (121) is turned off at least in a period when a transfer pulse for controlling the transfer switch of the pixel (10) transits.

Abstract: In a photoelectric conversion apparatus having a plurality of unit cells, wherein each of the unit cells has a photoelectric conversion element, a transfer transistor and a floating diffusion region, a light shielding portion arranged on an upper portion of the floating diffusion region is included. The respective light shielding portions are separated from one another, and are in a floating state without being electrically connected to the floating diffusion region.

Abstract: Provided is a solid-state imaging apparatus that is capable of preventing a harmful influence due to noise generated in a control line. The solid-state imaging apparatus includes: a plurality of pixels each including a photoelectric conversion unit for photoelectric converting to generate a signal; control lines for supplying control signals for driving the pixels; driving buffers for driving the control lines; and switching units for switching between a first path for supplying power source voltages from power source circuits to power source terminals of the driving buffers and a second path for supplying power source voltages from capacitors to the power source terminals of the driving buffers.

Abstract: An solid state image pickup device including a plurality of photoelectric conversion regions (PD1, PD2) for generating carriers by photoelectric conversions to accumulate the generated carriers, an amplifying unit for amplifying the carriers, being commonly provided to at least two photoelectric conversion regions, a first and a second transfer units (Tx-MOS1, Tx-MOS2) for transferring the carriers accumulated in the first and the second photoelectric conversion regions, respectively, a first and a second carrier accumulating units (Cs1, Cs2) for accumulating the carriers flowing out from the first and the second photoelectric conversion regions through a first and a second fixed potential barriers, respectively, and a third and a fourth transfer units (Cs-MOS1, Cs-MOS2) for transferring the carriers accumulated in the first and the second carrier accumulating units to the amplifying unit, respectively.

Abstract: Unit cells each having a plurality of photodiodes 101a and 101b, a plurality of transfer MOSFETs 102a and 102b provided in correspondence to the plurality of photodiodes, respectively and a common amplifying MOSFET 104 for amplifying and outputting signals read out from the plurality of diodes are arranged two-dimensionally, and, plural photodiodes are disposed around the photodiode 101b and trapping regions 130, 134, 135 and 132 are for trapping excessive carriers from the photodiode 101b are provided between the photodiode 101b and the plural photodiodes, respectively.

Abstract: A solid-state imaging apparatus, an imaging system and a driving method for the solid-state imaging apparatus that can reduce jaggy while increasing speed of operation for reading out signals are provided. The driving method includes a first step of storing one or more signals from the plurality of pixels in each of the plurality of first holding units; a second step of adding the signals from the plurality of pixels stored in the plurality of first holding units; and a third step of outputting the signal stored in the second holding unit, such that at least a part of a period of the first step is overlapped with a period of the third step.

Abstract: A solid state image pickup device which can prevent color mixture by using a layout of a capacitor region provided separately from a floating diffusion region and a camera using such a device are provided. A photodiode region is a rectangular region including a photodiode. A capacitor region includes a carrier holding unit and is arranged on one side of the rectangle of the photodiode region as a region having a side longer than the one side. In a MOS unit region, an output unit region including an output unit having a side longer than the other side which crosses the one side of the rectangle of the photodiode region is arranged on the other side. A gate region and the FD region are arranged between the photodiode region and the capacitor region.

Abstract: An image sensing device characterized by including: a pixel array; a plurality of first holding capacitances; a plurality of second holding capacitances; a first reference power supply pattern; and a second reference power supply pattern, wherein at least part of the first reference power supply pattern is arranged in a first region where reference power supply electrodes of the plurality of first holding capacitances are arrayed, at least part of the second reference power supply pattern is arranged in a second region where reference power supply electrodes of the plurality of second holding capacitances are arrayed, and the first reference power supply pattern and the second reference power supply pattern are isolated in a region including the first region and the second region.

Abstract: A solid-state imaging apparatus, an imaging system and a driving method for the solid-state imaging apparatus that can reduce jaggy while increasing speed of operation for reading out signals are provided. The driving method includes a first step of storing one or more signals from the plurality of pixels in each of the plurality of first holding units; a second step of adding the signals from the plurality of pixels stored in the plurality of first holding units; and a third step of outputting the signal stored in the second holding unit, such that at least a part of a period of the first step is overlapped with a period of the third step.

Abstract: An image pickup device includes pixels, each including a photoelectric conversion unit and a transfer unit. The photoelectric conversion unit includes a first-conductivity-type first semiconductor region and a second-conductivity-type second semiconductor region. A second-conductivity-type third semiconductor region is formed on at least a part of a gap between a photoelectric conversion unit of a first pixel and a photoelectric conversion unit of a second pixel adjacent to the first pixel. A first-conductivity-type fourth semiconductor region having an impurity concentration higher than an impurity concentration of the first semiconductor region is formed between the photoelectric conversion unit and the third semiconductor region. A first-conductivity-type fifth semiconductor region having an impurity concentration higher than the first semiconductor region is arranged between the photoelectric conversion unit and the third semiconductor region and is arranged deeper than fourth semiconductor region.