Patents by Inventor Masanori Segawa

Masanori Segawa has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 5677045
    Abstract: A laminate capable of mounting semiconductor elements thereon; comprising an insulating layer which is constituted by a resin portion of sea-island structure and a woven reinforcement. The resin portion of sea-island structure is, for example, such that a resin as islands are dispersed in a resin as a matrix. Thus, the insulating layer exhibits a coefficient of thermal expansion of 3.0.about.10 (ppm/K) in a planar direction thereof and a glass transition temperature of 150.about.300 (.degree.C.). Owing to these physical properties, thermal stresses which the laminate undergoes in packaging the semiconductor elements thereon can be reduced, so that the connections of the laminate with the semiconductor elements can be made highly reliable.
    Type: Grant
    Filed: April 28, 1995
    Date of Patent: October 14, 1997
    Assignee: Hitachi, Ltd.
    Inventors: Akira Nagai, Masatsugu Ogata, Shuji Eguchi, Masahiko Ogino, Toshiaki Ishii, Masanori Segawa, Hiroyoshi Kokaku, Ryo Moteki, Ichiro Anjoh
  • Patent number: 5612569
    Abstract: As the semiconductor chip is large-sized, highly integrated and speeded up, it becomes difficult to pack the semiconductor chip together with leads in a package. In view of this difficulty, there has been adopted the package structure called the "Lead-On-Chip" or "Chip-On-Lead" structure in which the semiconductor and the leads are stacked and packed. In the package of this structure, according to the present invention, the gap between the leading end portions of the inner leads and the semiconductor chip is made wider than that between the inner lead portions except the leading end portions and the semiconductor chip thereby to reduce the stray capacity, to improve the signal transmission rate and to reduce the electrical noises.
    Type: Grant
    Filed: June 5, 1995
    Date of Patent: March 18, 1997
    Assignee: Hitachi, Ltd.
    Inventors: Gen Murakami, Kunihiro Tsubosaki, Masahiro Ichitani, Kunihiko Nishi, Ichiro Anjoh, Asao Nishimura, Makoto Kitano, Akihiro Yaguchi, Sueo Kawai, Masatsugu Ogata, Syuuji Eguchi, Hiroyoshi Kokaku, Masanori Segawa, Hiroshi Hozoji, Takashi Yokoyama, Noriyuki Kinjo, Aizo Kaneda, Junichi Saeki, Shozo Nakamura, Akio Hasebe, Hiroshi Kikuchi, Isamu Yoshida, Takashi Yamazaki, Kazuyoshi Oshima, Tetsurou Matsumoto
  • Patent number: 5530286
    Abstract: As the semiconductor chip is large-sized, highly integrated and speeded up, it becomes difficult to pack the semiconductor chip together with leads in a package. In view of this difficulty, there has been adopted the package structure called the "Lead-On-Chip" or "Chip-On-Lead" structure in which the semiconductor and the leads are stacked and packed. In the package of this structure, according to the present invention, the gap between the leading end portions of the inner leads and the semiconductor chip is made wider than that between the inner lead portions except the leading end portions and the semiconductor chip thereby to reduce the stray capacity, to improve the signal transmission rate and to reduce the electrical noises.
    Type: Grant
    Filed: August 22, 1994
    Date of Patent: June 25, 1996
    Assignee: Hitachi, Ltd.
    Inventors: Gen Murakami, Kunihiro Tsubosaki, Masahiro Ichitani, Kunihiko Nishi, Ichiro Anjoh, Asao Nishimura, Makoto Kitano, Akihiro Yaguchi, Sueo Kawai, Masatsugu Ogata, Syuuji Eguchi, Hiroyoshi Kokaku, Masanori Segawa, Hiroshi Hozoji, Takashi Yokoyama, Noriyuki Kinjo, Aizo Kaneda, Junichi Saeki, Shozo Nakamura, Akio Hasebe, Hiroshi Kikuchi, Isamu Yoshida, Takashi Yamazaki, Kazuyoshi Oshima, Tetsurou Matsumoto
  • Patent number: 5358904
    Abstract: As the semiconductor chip is large-sized, highly integrated and speeded up, it becomes difficult to pack the semiconductor chip together with leads in a package. In view of this difficulty, there has been adopted the package structure called the "Lead-On-Chip" or "Chip-On-Lead" structure in which the semiconductor and the leads are stacked and packed. In the package of this structure, according to the present invention, the gap between the leading end portions of the inner leads and the semiconductor chip is made wider than that between the inner lead portions except the leading end portions and the semiconductor chip thereby to reduce the stray capacity, to improve the signal transmission rate and to reduce the electrical noises.
    Type: Grant
    Filed: December 14, 1992
    Date of Patent: October 25, 1994
    Assignee: Hitachi, Ltd.
    Inventors: Gen Murakami, Kunihiro Tsubosaki, Masahiro Ichitani, Kunihiko Nishi, Ichiro Anjoh, Asao Nishimura, Makoto Kitano, Akihiro Yaguchi, Sueo Kawai, Masatsugu Ogata, Syuuji Eguchi, Hiroyoshi Kokaku, Masanori Segawa, Hiroshi Hozoji, Takashi Yokoyama, Noriyuki Kinjo, Aizo Kaneda, Junichi Saeki, Shozo Nakamura, Akio Hasebe, Hiroshi Kikuchi, Isamu Yoshida, Takashi Yamazaki, Kazuyoshi Oshima, Tetsurou Matsumoto
  • Patent number: 5225499
    Abstract: A resin composition having superior molding character, bonding character, moisture resistance, and heat resistance, for encapsulating of a semiconductor which contains:(a) An ether imide group compound represented by the general formula (I) ##STR1## wherein, each of R.sup.1 -R.sup.4, R.sup.8 and R.sup.8 is hydrogen, lower alkyl group, lower alkoxy group, lower fluoroalkyl group, chlorine or bromine, and R.sup.1 -R.sup.4, R.sup.7 and R.sup.8 may be same or different each other, and each of R.sup.5 and R.sup.6 is hydrogen, methyl group, ethyl group, trifluoromethyl group or trichloromethyl group, and R.sup.5 and R.sup.6 may be same or different each other, and D is a hydrocarbon group of a dicarboxylic acid having an ethylene type unsaturated double bond of an extract of the compound obtained by extraction with water in an amount 10 times by weight of the compound at 120.degree. C. for more than 100 hours has electric conductivity of at most 300 s/cm ph of 1.
    Type: Grant
    Filed: March 1, 1991
    Date of Patent: July 6, 1993
    Assignee: Hitachi, Ltd.
    Inventors: Hiroyoshi Kokaku, Masatsugu Ogata, Masanori Segawa, Hiroshi Hozoji, Akio Nishikawa, Fumio Sato
  • Patent number: 5181097
    Abstract: The phenol resin molding composition used in the present invention is obtained by subjecting a resol-type phenol resin to purification until, when the resin is extracted by heating with 10 times the amount of hot water at 120.degree. C. for 100 hours or more, the extract has an electric conductivity of 100 .mu.S/cm or less, a pH of 4-7 and a halogen ion content of 10 ppm or less, then preparing a composition comprising a resin component consisting of said resol-type phenol resin and a cure rate controlling agent incorporated therewith, optionally incorporating a filler into said composition, kneading the resulting mixture, and then grinding the kneaded mixture. The composition has a good moldability and, when used for resin-sealing of electronic devices or semiconductor devices and transfer-molding of electronic devices using resin, exhibits an excellent adhesive property, electric properties, moisture resistance and heat resistance.
    Type: Grant
    Filed: November 13, 1990
    Date of Patent: January 19, 1993
    Assignee: Hitachi, Ltd.
    Inventors: Masatsugu Ogata, Yasuhide Sugawara, Masanori Segawa, Hidetoshi Abe, Osamu Horie
  • Patent number: 5068712
    Abstract: As the semiconductor chip is large-sized, highly integrated and speeded up, it becomes difficult to pack the semiconductor chip together with leads in a package. In view of this difficulty, there has been adopted the package structure called the "Lead-On-Chip" or "Chip-On-Lead" structure in which the semiconductor and the leads are stacked and packed. In the package of this structure, according to the present invention, the gap between the leading end portions of the inner leads and the semiconductor chip is made wider than that between the inner lead portions except the leading end portions and the semiconductor chip thereby to reduce the stray capacity, to improve the signal transmission rate and to reduce the electrical noises.
    Type: Grant
    Filed: September 19, 1989
    Date of Patent: November 26, 1991
    Assignee: Hitachi, Ltd.
    Inventors: Gen Murakami, Kunihiro Tsubosaki, Masahiro Ichitani, Kunihiko Nishi, Ichiro Anjo, Asao Nishimura, Makoto Kitano, Akihiro Yaguchi, Sueo Kawai, Masatsugu Ogata, Syuuji Eguchi, Hiroyoshi Kokaku, Masanori Segawa, Hiroshi Hozoji, Takashi Yokoyama, Noriyuki Kinjo, Aizo Kaneda, Junichi Saeki, Shozo Nakamura, Akio Hasebe, Hiroshi Kikuchi, Isamu Yoshida, Takashi Yamazaki, Kazuyoshi Oshima, Tetsuro Matsumoto