Abstract: Embodiments provide a pest control agent that is excellent in safety, controlling effect, residual activity, and so on.

Abstract: A plating apparatus (10) is disclosed including a plating tank (9), cathodes (1a to 1f), a holding mechanism (2), at least one anode (3), and a rotation mechanism (4). The plating tank (9) contains an annularly or helically wound substrate (90) together with a plating solution. The cathodes (1a to 1f) are placed inside the plating tank (9). The holding mechanism (2) holds the cathodes (1a to 1f) at positions electrically connected to the outer periphery of the substrate (90) and holds the substrate (90) via the cathodes (1a to 1f). The anode (3) is placed at least on the inner periphery side of the substrate (90) held by the holding mechanism (2). The rotation mechanism (4) rotates at least either the substrate (90) and cathodes (1a to 1f) held by the holding mechanism (2) or the anode (3), or both, around the axis of the wound substrate (90).

Abstract: A predicting apparatus (100) includes an acquiring unit (101) that acquires a movement history of another vehicle from the other vehicle; a predicting unit (102) that predicts a behavior of the other vehicle based on the movement history; and an output unit (103) that outputs driving support information based on the prediction. The acquiring unit (101) acquires the movement history from the other vehicle in a communication range of inter-vehicle communication, and the predicting unit (102) predicts the behavior of the other vehicle in the communication range of the inter-vehicle communication. The acquiring unit (101) acquires information usable in the prediction of the behavior of the other vehicle, and the predicting unit (102) predicts the behavior of the other vehicle using plural pieces of information together with the movement history.

Abstract: In one embodiment, a semiconductor manufacturing apparatus includes an extraction module configured to extract, in cycle etching that repeats first processes of etching a workpiece layer and second processes of performing different processing from the first processes for plural cycles, light emission intensities in the first processes for individual cycles. The apparatus further includes a detection module configured to detect an etching end point of the workpiece layer in the cycle etching, based on the light emission intensities of the plural cycles.

Abstract: Provided is a movement assistance device that is capable of performing effective travel assistance even in a vehicle in which there is no map data or the like. When assisting the movement of a vehicle C, vehicle information that corresponds to a vehicle other than the vehicle C is acquired and it is determined on the basis of the acquired vehicle information whether the vehicle C and the other vehicle are moving along the same road. When the other vehicle and the vehicle C are moving along the same road, road data that is related to the road is acquired from the other vehicle and it is determined whether the vehicle C requires travel assistance in which the road data is used. When it is determined that travel assistance is required, travel assistance in which the road data is used is executed.

Abstract: In one embodiment, a semiconductor manufacturing apparatus includes an extraction module configured to extract, in cycle etching that repeats first processes of etching a workpiece layer and second processes of performing different processing from the first processes for plural cycles, light emission intensities in the first processes for individual cycles. The apparatus further includes a detection module configured to detect an etching end point of the workpiece layer in the cycle etching, based on the light emission intensities of the plural cycles.

Abstract: In one embodiment, a method of manufacturing a semiconductor device includes forming a first film to be used to form a first pattern on a substrate, and forming a second film to be used to form a second pattern on the first film. The method further includes forming a third pattern formed of a third film on the second film. The method further includes processing the second film by using the third pattern to form the second pattern formed of the second film, and processing the first film by using the second pattern to form the first pattern formed of the first film. The method further includes slimming the first pattern by dry etching.

Abstract: Systems and methods are presented for preventing removal of material comprising a metal gate during removal of a mask layer in a semiconductor structure. Upon exposure of the metal line during formation of a via opening the exposed portion of the metal line undergoes chemical modification to form a passivation layer. The passivation layer is subsequently covered by an etch selectivity layer, wherein the etch selectivity layer prevents removal of at least one of a portion of the metal line or the passivation layer during removal of a hard mask layer comprising the semiconductor structure. In an alternate approach, the metal line is formed with a capping layer which, following exposure by a via opening formed in the semiconductor structure, is chemically modified to form a layer having etch selectivity to acts as a protective layer during removal of a hard mask layer comprising the semiconductor layer.

Abstract: A method for manufacturing a semiconductor device includes: forming a stacked body of a dielectric layer including a silicon oxide and a conductive layer including silicon above a substrate; and forming a hole penetrating through the dielectric layer and the conductive layer in the stacked body, the forming the hole including: forming a first mask layer including a silicon oxide above the stacked body; etching the conductive layer while using the first mask layer as a mask; and forming a second mask layer having more silicon content than the dielectric layer above the first mask layer to etch the dielectric layer while using the second mask layer as a mask.

Abstract: Methods for fabricating a device and related device structures are provided herein. According to one embodiment, a method for fabricating a device includes the acts of producing a substrate; forming a structure on the substrate having a lower dielectric layer, a metal layer, an upper dielectric layer, a planarizing layer, and a layer of photoresist material; developing the photoresist material according to a mask pattern; etching the planarizing layer and the upper dielectric layer according to the mask pattern; removing the photoresist material and the planarizing layer upon etching of the planarizing layer and the upper dielectric layer; applying a selective metal growth or metal/organic film to respective exposed portions of the metal layer following etching of the upper dielectric layer, thereby obtaining an inverted mask pattern; and etching at least the metal layer and the lower dielectric layer according to the inverted mask pattern.

Abstract: Methods for fabricating a device and related device structures are provided herein. According to one embodiment, a method for fabricating a device includes the acts of producing a substrate; forming a structure on the substrate having a lower dielectric layer, a metal layer, an upper dielectric layer, a planarizing layer, and a layer of photoresist material; developing the photoresist material according to a mask pattern; etching the planarizing layer and the upper dielectric layer according to the mask pattern; removing the photoresist material and the planarizing layer upon etching of the planarizing layer and the upper dielectric layer; applying a selective metal growth or metal/organic film to respective exposed portions of the metal layer following etching of the upper dielectric layer, thereby obtaining an inverted mask pattern; and etching at least the metal layer and the lower dielectric layer according to the inverted mask pattern.

Abstract: A nonvolatile semiconductor memory device with a substrate. A plurality of dielectric films and electrode films are alternately stacked on the substrate and have a through hole penetrating in the stacking direction. A semiconductor pillar is formed inside the through hole. A charge storage layer is provided at least between the semiconductor pillar and the electrode film. At least part of a side surface of a portion of the through hole located in the electrode film is sloped relative to the stacking direction.

Abstract: In one embodiment, a method is disclosed for manufacturing a semiconductor device. The method can include forming a resist on a subject layer containing silicon. The method can etch the subject layer using the resist as a mask and with a gas containing a halogen element, which is introduced into a processing chamber. After the etching of the subject layer, the method can slim a planner size of the resist with oxygen gas and a gas containing a halogen element, which are introduced into the same processing chamber.

Abstract: A method for manufacturing a semiconductor device includes: forming a stacked body of a dielectric layer including a silicon oxide and a conductive layer including silicon above a substrate; and forming a hole penetrating through the dielectric layer and the conductive layer in the stacked body, the forming the hole including: forming a first mask layer including a silicon oxide above the stacked body; etching the conductive layer while using the first mask layer as a mask; and forming a second mask layer having more silicon content than the dielectric layer above the first mask layer to etch the dielectric layer while using the second mask layer as a mask.

Abstract: A nonvolatile semiconductor memory device includes: a substrate; a plurality of dielectric films and electrode films which are alternately stacked on the substrate and have a through hole penetrating in the stacking direction; a semiconductor pillar formed inside the through hole; and a charge storage layer provided at least between the semiconductor pillar and the electrode film. At least part of a side surface of a portion of the through hole located in the electrode film is sloped relative to the stacking direction.

Abstract: An Internet camera system is provided with a file server connected to the Internet, an Internet camera provided with a modem, and a terminal device. The Internet camera is capable of capturing an image and converting the same into an image file. Further, the Internet camera is capable of transmitting the image file, through the modem, to the file server via the Internet. The terminal device is connectable to the Internet, and is capable of browsing images the file server stores. The terminal device further includes a transmitting system that transmits predetermined data to the file server. The file server includes a calling system that makes a call to the modem of the Internet camera when the predetermined data is transmitted from the terminal device. The Internet camera is configured to capture an image and transmit an image file of the captured image when the modem receives a call.

Abstract: An Internet camera system is provided with a file server connected to the Internet, an Internet camera provided with a modem, and a terminal device. The Internet camera is capable of capturing an image and converting the same into an image file. Further, the Internet camera is capable of transmitting the image file, through the modem, to the file server via the Internet. The terminal device is connectable to the Internet, and is capable of browsing images the file server stores. The terminal device further includes a transmitting system that transmits predetermined data to the file server. The file server includes a calling system that makes a call to the modem of the Internet camera when the predetermined data is transmitted from the terminal device. The Internet camera is configured to capture an image and transmit an image file of the captured image when the modem receives a call.

Abstract: In a method of reprinting an image on a frame of a film piece among plural film pieces received with a printing order onto a photographic paper, the plural film pieces are incorporated into a film assemblage without splicing the plural film pieces with no consideration whether each of the plural film pieces has a frame to be reprinted; the plural film pieces are fed out of the film assemblage; the image of the film piece among the plural film pieces fed from the film assemblage is exposed onto the photographic paper; and the exposed photographic paper is developed so as to obtain a visual image.

Abstract: A method for processing a silver halide photographic light-sensitive material is disclosed.

Abstract: Disclosed is a photographic processing composition in the tablet form which comprises a first and a second ingredients, said composition being prepared by a first granulating a first powder comprising said first ingredient to form first granules, a second granulating a second powder comprising said second ingredient to form second granules, mixing said first and second granules, and compressing said mixture of granules. The tables have an apparent density of 1.0 to 2.5 g/cm.sup.3.