Abstract: A semiconductor device includes a first transistor including a normally-on transistor with a first source, a first drain, and a first gate and a second transistor including a normally-off transistor with a second source, a second drain electrically connected to the first source, and a second gate. A first gate signal, which turns on later than a second gate signal at the time of turn-on of the device and turns off earlier than the second gate signal at the time of turn-off of the device, is input to the first gate. The second gate signal, which turns on earlier than the first gate signal at the time of the turn-on and turns off later than the first gate signal at the time of the turn-off, is input to the second gate. An amount of delay of each of the first gate signal and the second gate signal is set independently.

Abstract: A light emitting device includes: a first semiconductor laser element; a second semiconductor laser element; and a light exit surface which emits light from the first semiconductor laser element and the second semiconductor laser element. The first semiconductor laser element is disposed at a position farther than the second semiconductor laser element as seen from a flat surface including a point on a surface of the light exit surface and perpendicular to a light extraction direction.

Abstract: A light-emitting device includes a plurality of semiconductor laser elements including a first semiconductor laser element, and a plurality of reflectors including a first reflector for reflecting light emitted from the first semiconductor laser element, each of reflectors reflecting light emitted from corresponding one of the plurality of semiconductor laser elements. Light emitted from the first semiconductor laser element passes through a gap between two of the plurality of reflectors excluding the first reflector and reaches the first reflector. Lights emitted from the plurality of semiconductor laser elements are extracted in a direction different than an incident direction thereof toward the plurality of reflectors.

Abstract: A light-emitting device includes a laser diode element, a wavelength-converting member that absorbs light emitted from the laser diode element and converts wavelength of the light, and a transparent conductive film that is arranged on at least one of a light extracting-side surface and a laser diode element-side surface of the wavelength-converting member. The transparent conductive film is configured such that electrical resistance in a region overlapping the wavelength-converting member increases when the wavelength-converting member is damaged.

Abstract: A light-emitting device includes a laser diode element, a wavelength-converting member that absorbs light emitted from the laser diode element and converts wavelength of the light, and a transparent conductive film that is arranged on at least one of a light extracting-side surface and a laser diode element-side surface of the wavelength-converting member. The transparent conductive film is configured such that electrical resistance in a region overlapping the wavelength-converting member increases when the wavelength-converting member is damaged.

Abstract: A light emitting device includes: a first semiconductor laser element; a second semiconductor laser element; and a light exit surface which emits light from the first semiconductor laser element and the second semiconductor laser element. The first semiconductor laser element is disposed at a position farther than the second semiconductor laser element as seen from a flat surface including a point on a surface of the light exit surface and perpendicular to a light extraction direction.

Abstract: A light-emitting device includes a plurality of semiconductor laser elements including a first semiconductor laser element, and a plurality of reflectors including a first reflector for reflecting light emitted from the first semiconductor laser element, each of reflectors reflecting light emitted from corresponding one of the plurality of semiconductor laser elements. Light emitted from the first semiconductor laser element passes through a gap between two of the plurality of reflectors excluding the first reflector and reaches the first reflector. Lights emitted from the plurality of semiconductor laser elements are extracted in a direction different than an incident direction thereof toward the plurality of reflectors.

Abstract: A light-emitting device includes a semiconductor laser element arranged in a first space, a resin member arranged in a second space, a light transmitting member that transmits light emitted from the semiconductor laser element, the light transmitting member being included in a wall separating the first space from the second space; and a wavelength-converting member that absorbs the light emitted from the semiconductor laser element and passing through the light transmitting member and converts wavelength of the light. The first space and the second space are isolated from each other so as not to exchange any gas therebetween.

Abstract: A light-emitting device has a current blockage layer formed between a p-layer and a transparent electrode. A region of the transparent electrode on the current blockage layer has a higher sheet resistance as compared with the remaining region. The current blockage layer has a circular planar pattern containing a contact portion of a p-electrode. A straight line L passing through an arbitrary position in the contact portion and extending to a contact portion of an n-electrode with the shortest distance is defined. The center O? of the width of the current blockage layer in the direction of the straight line L is located more remote from the contact portion of the n-electrode than is the center O of the width of the contact portion of the p-electrode in the direction of the straight line L. This structure can suppress an increase in drive voltage.

Abstract: A group-III nitride compound semiconductor light emitting element includes a substrate that has a main face on which an concave and convex portion is formed, a group-III nitride compound semiconductor layer that is formed on the main face of the substrate, and a clearance that is formed between the substrate and the group-III nitride compound semiconductor layer at a first region of the semiconductor light emitting element. In the first region, a portion of the group-III nitride compound semiconductor layer and a portion of the clearance are disposed in a concave of the concave and convex portion on a section through two adjacent top portions of the concave and convex portion and a bottom portion located between the adjacent top portions.

Abstract: A light-emitting device has a current blockage layer formed between a p-layer and a transparent electrode. A region of the transparent electrode on the current blockage layer has a higher sheet resistance as compared with the remaining region. The current blockage layer has a circular planar pattern containing a contact portion of a p-electrode. A straight line L passing through an arbitrary position in the contact portion and extending to a contact portion of an n-electrode with the shortest distance is defined. The center O? of the width of the current blockage layer in the direction of the straight line L is located more remote from the contact portion of the n-electrode than is the center O of the width of the contact portion of the p-electrode in the direction of the straight line L. This structure can suppress an increase in drive voltage.

Abstract: A semiconductor light emitting element includes a semiconductor laminated body comprising a first conductivity type layer, a light emitting layer and a second conductivity type layer in this order from a lower side, a first electrode formed on the first conductivity type layer, and a second electrode comprising a transparent electrode formed on the second conductivity type layer and an auxiliary electrode formed on the transparent electrode, the transparent electrode comprising an oxide and having sheet resistance smaller than that of the second conductivity type layer and the auxiliary electrode comprising metal and having sheet resistance smaller than that of the transparent electrode, wherein the auxiliary electrode has, in a planar view, a linear surrounding portion surrounding the first electrode and a pad portion formed outside the surrounding portion for connecting a wire and the surrounding portion has a plurality of shortest-distance portions, in which a plan view distance from the first electrode is

Abstract: A light emitting element includes a semiconductor laminate structure including a first semiconductor layer of a first conductivity type, a light emitting layer, and a second semiconductor layer of a second conductivity type different from the first conductivity type, a part of the second semiconductor layer and the light emitting layer being removed to expose a part of the first semiconductor layer, a first reflecting layer located on the semiconductor laminate structure and including an opening, the opening being formed in the exposed part of the first semiconductor layer, a transparent wiring electrode for carrier injection into the first semiconductor layer or the second semiconductor layer through the opening, and a second reflecting layer formed on the transparent wiring electrode and covering a part of the opening so as to reflect light emitted from the light emitting layer and passing through the opening back to the first semiconductor layer.

Abstract: A semiconductor light emitting element includes a semiconductor multilayer structure including a first conductive type layer, a second conductive type layer, and a light emitting layer sandwiched between the first conductive type layer and the second conductive type layer, and a reflecting layer formed on the second conductive type layer for reflecting the light emitted from the light emitting layer. The light is extracted in a direction from the light emitting layer toward the first conductive type layer. The first conductive type layer includes a concavo-convex region on a surface thereof not opposite to the light emitting layer, for changing a path of light, and at least a part of the reflecting layer is formed extending to right above an edge of the concavo-convex region.

Abstract: To improve light emission efficiency and reliability. A transparent conductive film 10 is formed on an entire top surface of a second semiconductor layer 108, and a photo-resist is applied thereon. When removing the photo-resist on the upper surface corresponding to an electrode forming part 16 of a first semiconductor layer 104, the photo-resist is removed to be gradually thinned at a boundary of a portion to be removed. The transparent conductive film is wet etched using the remaining photo-resist as a mask to expose a part of the second semiconductor layer. Dry etching is performed using the remaining photo-resist and the transparent conductive film as a mask to expose the electrode forming part of the first semiconductor layer. A portion of the transparent conductive film exposed in the dry etching using the remaining photo-resist as a mask is wet etched. The remaining photo-resist is eliminated.

Abstract: A light emitting element includes a semiconductor laminate structure including a first semiconductor layer of a first conductivity type, a light emitting layer, and a second semiconductor layer of a second conductivity type different from the first conductivity type, a part of the second semiconductor layer and the light emitting layer being removed to expose a part of the first semiconductor layer, a first reflecting layer located on the semiconductor laminate structure and including an opening, the opening being formed in the exposed part of the first semiconductor layer, a transparent wiring electrode for carrier injection into the first semiconductor layer or the second semiconductor layer through the opening, and a second reflecting layer formed on the transparent wiring electrode and covering a part of the opening so as to reflect light emitted from the light emitting layer and passing through the opening back to the first semiconductor layer.

Abstract: A light emitting element includes a semiconductor laminate structure including a first semiconductor layer of a first conductivity type, a light emitting layer, and a second semiconductor layer of a second conductivity type different from the first conductivity type, a part of the second semiconductor layer and the light emitting layer being removed to expose a part of the first semiconductor layer, a first reflecting layer on the semiconductor laminate structure and including an opening, the opening being formed in the exposed part of the first semiconductor layer, a transparent wiring electrode for carrier injection into the first semiconductor layer or the second semiconductor layer through the opening, a second reflecting layer formed on the transparent wiring electrode and covering a part of the opening so as to reflect light emitted from the light emitting layer and passing through the opening back to the first semiconductor layer.

Abstract: A semiconductor light emitting device includes: a first conductivity type semiconductor layer; a light emission layer; a second conductivity type semiconductor layer; a conductive portion of a first polarity electrically connected to the first conductivity type semiconductor layer; and a conductive portion of a second polarity electrically connected to the second conductivity type semiconductor layer. At least one of the conductive portion of the first polarity and the conductive portion of the second polarity includes a plurality of separated electrode portions arranged on a light emission surface. The closer the positions of the separated electrode portions are to a center point of the light emission surface, the separated electrode portions are provided sparsely, and the farther the positions of the separated electrode portions are from a center point of the light emission surface, the separated electrode portions are provided densely.

Abstract: A group-III nitride compound semiconductor light emitting element includes a substrate that has a main face on which an concave and convex portion is formed, a group-III nitride compound semiconductor layer that is formed on the main face of the substrate, and a clearance that is formed between the substrate and the group-III nitride compound semiconductor layer at a first region of the semiconductor light emitting element. In the first region, a portion of the group-III nitride compound semiconductor layer and a portion of the clearance are disposed in a concave of the concave and convex portion on a section through two adjacent top portions of the concave and convex portion and a bottom portion located between the adjacent top portions.

Abstract: A light-emitting element includes a semiconductor laminated structure including a nitride semiconductor, and formed by laminating a first semiconductor layer of a first conductivity type, a light-emitting layer and a second semiconductor layer of a second conductivity type different from the first conductivity type, the first semiconductor layer being exposed by removing a part of the second semiconductor layer and the light-emitting layer, a concave portion formed in the exposed portion of the first semiconductor layer, a first electrode formed on the concave portion and being in ohmic contact with the first semiconductor layer, and a second electrode being in ohmic contact with the second semiconductor layer and formed surrounding the first electrode.