Abstract: A first intermediate electrode 30 is a plural number of electrodes connecting to plural electrode forming parts formed in plural places, respectively on the surface of a first semiconductor layer 104. A second intermediate electrode 40 is a plural number of electrodes connecting to plural places of a transparent electrically conductive film 10, respectively. A first electrode 60 connects a plural number of the first intermediate electrodes 30 to each other, and a second electrode 70 connects a plural number of the second intermediate electrodes 40 to each other. The transparent electrically conductive film 10 is formed thin in a region A where a distance between the first intermediate electrode and the second intermediate electrode is the shortest, as compared with other regions.

Abstract: To improve light emission efficiency and reliability. A transparent conductive film 10 is formed on an entire top surface of a second semiconductor layer 108, and a photo-resist is applied thereon. When removing the photo-resist on the upper surface corresponding to an electrode forming part 16 of a first semiconductor layer 104, the photo-resist is removed to be gradually thinned at a boundary of a portion to be removed. The transparent conductive film is wet etched using the remaining photo-resist as a mask to expose a part of the second semiconductor layer. Dry etching is performed using the remaining photo-resist and the transparent conductive film as a mask to expose the electrode forming part of the first semiconductor layer. A portion of the transparent conductive film exposed in the dry etching using the remaining photo-resist as a mask is wet etched. The remaining photo-resist is eliminated.

Abstract: A method for producing a Group III nitride semiconductor light-emitting device with a face-up configuration including a p-type layer and a transparent electrode composed of ITO is provided in which a p-pad electrode on the transparent electrode and an n-electrode on an n-type layer are simultaneously formed. The p-pad electrode and the n-electrode are composed of Ni/Au. The resultant structure is heat treated at 570° C. and good contact can be established in the p-pad electrode and the n-electrode. The heat treatment also provides a region in the transparent electrode immediately below the p-pad electrode, the region and the p-type layer having a higher contact resistance than that of the other region of the transparent electrode and the p-type layer. Thus, a region of an active layer below the provided region does not emit light and hence the light-emitting efficiency of the light-emitting device can be increased.

Abstract: A semiconductor light-emitting element includes a semiconductor laminated body including a first conductivity type layer, a light-emitting layer and a second conductivity type layer in this order, a transparent electrode formed on the first conductivity type layer and comprising an oxide, and an auxiliary electrode formed between the first conductivity type layer and the transparent electrode, the auxiliary electrode having a higher reflectivity to light emitted from the light-emitting layer, a larger contact resistance with the first conductivity type layer and a smaller sheet resistance than the transparent electrode.

Abstract: A light-emitting element includes a semiconductor laminated structure including a first semiconductor layer, a light-emitting layer and a second semiconductor layer, an insulation layer provided on the semiconductor laminated structure, a first wiring including a first vertical conducting portion and a first planar conducting portion and being electrically connected to the first semiconductor layer, the first vertical conducting portion extending inside the insulation layer, the light-emitting layer and the second semiconductor layer in a vertical direction and the first planar conducting portion extending inside the insulation layer in a planar direction, and a second wiring including a second vertical conducting portion and a second planar conducting portion and being electrically connected to the second semiconductor layer, the second vertical conducting portion extending inside the insulation layer in a vertical direction and the second planar conducting portion extending inside the insulation layer in a

Abstract: A semiconductor light emitting element includes a semiconductor multilayer structure including a first conductive type layer, a second conductive type layer, and a light emitting layer sandwiched between the first conductive type layer and the second conductive type layer, and a reflecting layer formed on the second conductive type layer for reflecting the light emitted from the light emitting layer. The light is extracted in a direction from the light emitting layer toward the first conductive type layer. The first conductive type layer includes a concavo-convex region on a surface thereof not opposite to the light emitting layer, for changing a path of light, and at least a part of the reflecting layer is formed extending to right above an edge of the concavo-convex region.

Abstract: A light-emitting element includes a semiconductor laminated structure including a nitride semiconductor, and formed by laminating a first semiconductor layer of a first conductivity type, a light-emitting layer and a second semiconductor layer of a second conductivity type different from the first conductivity type, the first semiconductor layer being exposed by removing a part of the second semiconductor layer and the light-emitting layer, a concave portion formed in the exposed portion of the first semiconductor layer, a first electrode formed on the concave portion and being in ohmic contact with the first semiconductor layer, and a second electrode being in ohmic contact with the second semiconductor layer and formed surrounding the first electrode.

Abstract: A light emitting element includes a semiconductor laminate structure including a first semiconductor layer of a first conductivity type, a light emitting layer, and a second semiconductor layer of a second conductivity type different from the first conductivity type, a part of the second semiconductor layer and the light emitting layer being removed to expose a part of the first semiconductor layer: a first reflecting layer on the semiconductor laminate structure and including an opening, the opening being formed in the exposed part of the first semiconductor layer, a transparent wiring electrode for carrier injection into the first semiconductor layer or the second semiconductor layer through the opening, a second reflecting layer formed on the transparent wiring electrode and covering a part of the opening so as to reflect light emitted from the light emitting layer and passing through the opening back to the first semiconductor layer.

Abstract: A first intermediate electrode 30 is a plural number of electrodes connecting to plural electrode forming parts formed in plural places, respectively on the surface of a first semiconductor layer 104. A second intermediate electrode 40 is a plural number of electrodes connecting to plural places of a transparent electrically conductive film 10, respectively. A first electrode 60 connects a plural number of the first intermediate electrodes 30 to each other, and a second electrode 70 connects a plural number of the second intermediate electrodes 40 to each other. The transparent electrically conductive film 10 is formed thin in a region A where a distance between the first intermediate electrode and the second intermediate electrode is the shortest, as compared with other regions.

Abstract: A semiconductor light-emitting element includes a semiconductor laminated body including a first conductivity type layer, a light-emitting layer and a second conductivity type layer in this order, a transparent electrode formed on the first conductivity type layer and comprising an oxide, and an auxiliary electrode formed between the first conductivity type layer and the transparent electrode, the auxiliary electrode having a higher reflectivity to light emitted from the light-emitting layer, a larger contact resistance with the first conductivity type layer and a smaller sheet resistance than the transparent electrode.

Abstract: A light-emitting element includes a semiconductor laminated structure including a first semiconductor layer, a light-emitting layer and a second semiconductor layer, an insulation layer provided on the semiconductor laminated structure, a first wiring including a first vertical conducting portion and a first planar conducting portion and being electrically connected to the first semiconductor layer, the first vertical conducting portion extending inside the insulation layer, the light-emitting layer and the second semiconductor layer in a vertical direction and the first planar conducting portion extending inside the insulation layer in a planar direction, and a second wiring including a second vertical conducting portion and a second planar conducting portion and being electrically connected to the second semiconductor layer, the second vertical conducting portion extending inside the insulation layer in a vertical direction and the second planar conducting portion extending inside the insulation layer in a

Abstract: A semiconductor light emitting element includes a semiconductor laminated body comprising a first conductivity type layer, a light emitting layer and a second conductivity type layer in this order from a lower side, a first electrode formed on the first conductivity type layer, and a second electrode comprising a transparent electrode formed on the second conductivity type layer and an auxiliary electrode formed on the transparent electrode, the transparent electrode comprising an oxide and having sheet resistance smaller than that of the second conductivity type layer and the auxiliary electrode comprising metal and having sheet resistance smaller than that of the transparent electrode, wherein the auxiliary electrode has, in a planar view, a linear surrounding portion surrounding the first electrode and a pad portion formed outside the surrounding portion for connecting a wire and the surrounding portion has a plurality of shortest-distance portions, in which a plan view distance from the first electrode is

Abstract: A method for producing a Group III nitride semiconductor light-emitting device with a face-up configuration including a p-type layer and a transparent electrode composed of ITO is provided in which a p-pad electrode on the transparent electrode and an n-electrode on an n-type layer are simultaneously formed. The p-pad electrode and the n-electrode are composed of Ni/Au. The resultant structure is heat treated at 570° C. and good contact can be established in the p-pad electrode and the n-electrode. The heat treatment also provides a region in the transparent electrode immediately below the p-pad electrode, the region and the p-type layer having a higher contact resistance than that of the other region of the transparent electrode and the p-type layer. Thus, a region of an active layer below the provided region does not emit light and hence the light-emitting efficiency of the light-emitting device can be increased.

Abstract: A semiconductor light-emitting element 100 is formed including a buffer layer 102, a n-type GaN layer 103, a light-emitting layer 104 and a p-type layer 105 laminated in this order on a sapphire substrate and has a light transmitting electrode 106 made of a needle crystal of ITO.

Abstract: A flip-chip type of Group III nitride based compound semiconductor light-emitting device comprises a transparent conductive film 10 made of ITO on a p-type contact layer. On the transparent conductive film, an insulation protection film 20, a reflection film 30 which is made of silver (Ag) and aluminum (Al) and reflects light to a sapphire substrate side, and a metal layer 40 made of gold (Au) are deposited in sequence. Because the insulation protection film 20 exists between the transparent conductive film 10 and the reflection film 30, metal atoms comprised in the reflection film 30 can be prevented from diffusing in the transparent conductive film 10. That enables the transparent conductive film 10 to maintain high transmissivity. As a result, a light-emitting device having high external quantum efficienty can be provided.

Abstract: In a Group III nitride compound semiconductor light-emitting device which outputs lights from a semiconductor plane, about 1.5 ?m in height of a Group III nitride compound semiconductor projection part 150, which is made of Mg-doped p-type GaN having Mg doping concentration of 8×1019/cm3 and is formed through selective growth, is formed on a p-type contact layer (second p-layer) 108. And a light-transparency electrode 110 is formed thereon through metal deposition. The Group III nitride compound semiconductor projection part 150 makes a rugged surface for outputting lights and actual critical angle is widened, which enables to improve luminous outputting efficiency. And because etching is not employed to form the ruggedness, driving voltage does not increase.

Abstract: A flip-chip type of Group III nitride based compound semiconductor light-emitting device comprises a transparent conductive film 10 made of ITO on a p-type contact layer. On the transparent conductive film, an insulation protection film 20, a reflection film 30 which is made of silver (Ag) and aluminum (Al) and reflects light to a sapphire substrate side, and a metal layer 40 made of gold (Au) are deposited in sequence. Because the insulation protection film 20 exists between the transparent conductive film 10 and the reflection film 30, metal atoms comprised in the reflection film 30 can be prevented from diffusing in the transparent conductive film 10. That enables the transparent conductive film 10 to maintain high transmissivity. As a result, a light-emitting device having high external quantum efficienty can be provided.

Abstract: In a Group III nitride compound semiconductor light-emitting device which outputs lights from a semiconductor plane, about 1.5 ?m in height of a Group III nitride compound semiconductor projection part 150, which is made of Mg-doped p-type GaN having Mg doping concentration of 8×1019/cm3 and is formed through selective growth, is formed on a p-type contact layer (second p-layer) 108. And a light-transparency electrode 110 is formed thereon through metal deposition. The Group III nitride compound semiconductor projection part 150 makes a rugged surface for outputting lights and actual critical angle is widened, which enables to improve luminous outputting efficiency. And because etching is not employed to form the ruggedness, driving voltage does not increase.

Abstract: In a designated channel terminating method and apparatus, a B channel to which a call is to be terminated is determined by referring to a registration table in terminating processing of the call. Telephone numbers are registered in the registration table upon registration/designation by subscribers via subscriber circuits or registered by a registering operation through a terminal in a switching center. The method includes a permission/exclusion selecting step and a preferential/absolute selecting step. In the permission/exclusion selecting step, it is checked whether a purpose of registration with respect to said registration table is to designate a B channel to which a call from a specific calling party is to be terminated or designate a B channel to which the call should not be terminated. In the preferential/unconditional processing selecting step, it is determined whether B channel designation is to be preferentially or absolutely processed.