Abstract: As an antitumor drug which is excellent in terms of antitumor effect and safety, there is provided an antibody-drug conjugate in which an antitumor compound represented by the following formula is conjugated to an antibody via a linker having a structure represented by the following formula: -L1-L2-LP-NH—(CH2)n1-La-Lb-Lc- wherein the antibody is connected to the terminal of L1, and the antitumor compound is connected to the terminal of Lc with the nitrogen atom of the amino group at position 1 as a connecting position.

Abstract: A repair joint device capable of joining by welding divided housings and of facilitating the welding operation; and includes a plurality of circumferentially divided housings, wherein each divided housing has a divided sleeve, a pair of end plates provided on both end portions of the divided sleeve, and a seal accommodation projection provided on each end plate. A projection-free area is formed between the seal accommodation projections. An auxiliary projection device is provided on the projection-free area.

Abstract: A magnetic system for uniformly scanning an ion beam across a semiconductor wafer comprises a magnetic scanner having ac and dc coil windings each of which extend linearly along internal pole faces of a magnetic core. The ac and dc coil windings are mutually orthogonal; a time dependent magnetic component causes ion beam scanning while a substantially static (dc) field component allows the ion beam to be bent in an orthogonal plane. The current density in the ac and dc coil windings is uniformly dispersed along the pole faces leading to an improved beam spot uniformity at the wafer. The magnetic system also includes a collimator having first and second mutually opposed symmetrical dipoles defining an aperture between them. The poles of each dipole have a pole face varying monotonically and polynomially in a direction perpendicular to a central axis of the collimator: an increasing pole gap is formed towards that central axis.

Abstract: A magnetic system for uniformly scanning an ion beam across a semiconductor wafer comprises a magnetic scanner having ac and dc coil windings each of which extend linearly along internal pole faces of a magnetic core. The ac and dc coil windings are mutually orthogonal; a time dependent magnetic component causes ion beam scanning whilst a substantially static (dc) field component allows the ion beam to be bent in an orthogonal plane. The current density in the ac and dc coil windings is uniformly dispersed along the pole faces leading to an improved beam spot uniformity at the wafer. The magnetic system also includes a collimator having first and second mutually opposed symmetrical dipoles defining an aperture between them. The poles of each dipole have a pole face varying monotonically and polynomially in a direction perpendicular to a central axis of the collimator: an increasing pole gap is formed towards that central axis.

Abstract: A hybrid ion implantation apparatus that is equipped with shaping masks that shape the two edges of a ribbon-like ion beam IB in the short-side direction, a profiler that measures the current distribution in the long-side direction of the ion beam IB shaped by the shaping masks, and an electron beam supply unit that supplies an electron beam EB across the entire region in the long-side direction of the ion beam IB prior to its shaping by the shaping masks, wherein the electron beam supply unit varies the supply dose of the electron beam EB at each location in the long-side direction of the ion beam IB according to results of measurements by the profiler.

Abstract: A hybrid ion implantation apparatus that is equipped with shaping masks that shape the two edges of a ribbon-like ion beam IB in the short-side direction, a profiler that measures the current distribution in the long-side direction of the ion beam IB shaped by the shaping masks, and an electron beam supply unit that supplies an electron beam EB across the entire region in the long-side direction of the ion beam IB prior to its shaping by the shaping masks, wherein the electron beam supply unit varies the supply dose of the electron beam EB at each location in the long-side direction of the ion beam IB according to results of measurements by the profiler.

Abstract: The ion implanter includes a deflecting electrode and a shield member. The ion beam has a ribbon shape. The deflecting electrode deflects at least a part of the ion beam in a long side direction toward a short side direction of the ion beam, based on a result measured of a beam current density distribution in the long side direction. The shield member partially shields the ion beam deflected by the deflecting electrode. The deflecting electrode includes a plate electrode and an electrode group including plural electrodes. The electrode group is disposed to face the plate electrode to interpose the ion beam between the plate electrode and the electrode group. The plate electrode is electrically grounded, and the plurality of electrodes are electrically independent from each other. Each of the plurality of electrodes is connected to an independent power source from other power sources to perform a potential setting.

Abstract: A magnet used in an ion beam irradiation apparatus includes a pair of magnetic poles arranged facing each other on an inner side of the magnet across an ion beam; a plurality of magnetic field concentrating members that are arranged on each of the opposing surfaces of the magnetic poles and that perform a function of trapping electrons between the magnetic poles; and a protective member that covers opposing surfaces of the magnetic field concentrating members.

Abstract: A multipurpose ion implanter beam line configuration comprising a mass analyzer magnet followed by a magnetic scanner and magnetic collimator combination that introduce bends to the beam path, the beam line constructed for enabling implantation of common monatomic dopant ion species cluster ions, the beam line configuration having a mass analyzer magnet defining a pole gap of substantial width between ferromagnetic poles of the magnet and a mass selection aperture, the analyzer magnet sized to accept an ion beam from a slot-form ion source extraction aperture of at least about 80 mm height and at least about 7 mm width, and to produce dispersion at the mass selection aperture in a plane corresponding to the width of the beam, the mass selection aperture capable of being set to a mass-selection width sized to select a beam of the cluster ions of the same dopant species but incrementally differing molecular weights, the mass selection aperture also capable of being set to a substantially narrower mass-selection

Abstract: The ion implanter includes a deflecting electrode and a shield member. The ion beam has a ribbon shape. The deflecting electrode deflects at least a part of the ion beam in a long side direction toward a short side direction of the ion beam, based on a result measured of a beam current density distribution in the long side direction. The shield member partially shields the ion beam deflected by the deflecting electrode. The deflecting electrode includes a plate electrode and an electrode group including plural electrodes. The electrode group is disposed to face the plate electrode to interpose the ion beam between the plate electrode and the electrode group. The plate electrode is electrically grounded, and the plurality of electrodes are electrically independent from each other. Each of the plurality of electrodes is connected to an independent power source from other power sources to perform a potential setting.

Abstract: A physical quantity sensor device (10) having a structure in which a stress-sensitive body (1) of which the electric characteristics vary depending upon the application of stress and an insulator (2) having electric insulation are formed being closely adhered together, wherein the stress-sensitive body (1) comprises a thin glass film containing an electrically conductive element that is solidly dissolved therein as atoms, a method of manufacturing the physical quantity sensor device, a piezo-resistive film comprising a thin glass film containing ruthenium that is solidly dissolved therein as atoms, and a method of manufacturing the piezo-resistive film.

Abstract: A magnet used in an ion beam irradiation apparatus includes a pair of magnetic poles arranged facing each other on an inner side of the magnet across an ion beam; a plurality of magnetic field concentrating members that are arranged on each of the opposing surfaces of the magnetic poles and that perform a function of trapping electrons between the magnetic poles; and a protective member that covers opposing surfaces of the magnetic field concentrating members.

Abstract: A multipurpose ion implanter beam line configuration comprising a mass analyzer magnet followed by a magnetic scanner and magnetic collimator combination that introduce bends to the beam path, the beam line constructed for enabling implantation of common monatomic dopant ion species cluster ions, the beam line configuration having a mass analyzer magnet defining a pole gap of substantial width between ferromagnetic poles of the magnet and a mass selection aperture, the analyzer magnet sized to accept an ion beam from a slot-form ion source extraction aperture of at least about 80 mm height and at least about 7 mm width, and to produce dispersion at the mass selection aperture in a plane corresponding to the width of the beam, the mass selection aperture capable of being set to a mass-selection width sized to select a beam of the cluster ions of the same dopant species but incrementally differing molecular weights, the mass selection aperture also capable of being set to a substantially narrower mass-selection

Abstract: A multipurpose ion implanter beam line configuration comprising a mass analyzer magnet followed by a magnetic scanner and magnetic collimator combination that introduce bends to the beam path, the beam line constructed for enabling implantation of common monatomic dopant ion species cluster ions, the beam line configuration having a mass analyzer magnet defining a pole gap of substantial width between ferromagnetic poles of the magnet and a mass selection aperture, the analyzer magnet sized to accept an ion beam from a slot-form ion source extraction aperture of at least about 80 mm height and at least about 7 mm width, and to produce dispersion at the mass selection aperture in a plane corresponding to the width of the beam, the mass selection aperture capable of being set to a mass-selection width sized to select a beam of the cluster ions of the same dopant species but incrementally differing molecular weights, the mass selection aperture also capable of being set to a substantially narrower mass-selection

Abstract: A physical quantity sensor device (10) having a structure in which a stress-sensitive body (1) of which the electric characteristics vary depending upon the application of stress and an insulator (2) having electric insulation are formed being closely adhered together, wherein the stress-sensitive body (1) comprises a thin glass film containing an electrically conductive element that is solidly dissolved therein as atoms, a method of manufacturing the physical quantity sensor device, a piezo-resistive film comprising a thin glass film containing ruthenium that is solidly dissolved therein as atoms, and a method of manufacturing the piezo-resistive film.

Abstract: A multipurpose ion implanter beam line configuration comprising a mass analyzer magnet followed by a magnetic scanner and magnetic collimator combination that introduce bends to the beam path, the beam line constructed for enabling implantation of common monatomic dopant ion species cluster ions, the beam line configuration having a mass analyzer magnet defining a pole gap of substantial width between ferromagnetic poles of the magnet and a mass selection aperture, the analyzer magnet sized to accept an ion beam from a slot-form ion source extraction aperture of at least about 80 mm height and at least about 7 mm width, and to produce dispersion at the mass selection aperture in a plane corresponding to the width of the beam, the mass selection aperture capable of being set to a mass-selection width sized to select a beam of the cluster ions of the same dopant species but incrementally differing molecular weights, the mass selection aperture also capable of being set to a substantially narrower mass-selection

Abstract: An ion beam apparatus comprises an ion source 2 which extracts an ion beam 4, a mass separation electromagnet 6 which separates an ion beam 4 of desired mass from the ion beam 4 extracted from the ion source 2, a scanner 12 which scans the injected ion beam 4 with a given scan center as center within a given scan surface, an electrostatic deflector 30 which deflects the ion beam through 90° so that an ion beam of desired energy in said ion beam travels in a direction perpendicular to said scan surface within a circular-arc-shaped deflection zone centered on the scan center, and a scanning mechanism 54 which retains a target 50 and which mechanically, reciprocally moves the target 54 in a direction in which the target crosses the ion beam passed from the electrostatic deflector 30 at a given angle.

Abstract: An ion beam apparatus comprises an ion source 2 which extracts an ion beam 4, a mass separation electromagnet 6 which separates an ion beam 4 of desired mass from the ion beam 4 extracted from the ion source 2, a scanner 12 which scans the injected ion beam 4 with a given scan center as center within a given scan surface, an electrostatic deflector 30 which deflects the ion beam through 90° so that an ion beam of desired energy in said ion beam travels in a direction perpendicular to said scan surface within a circular-arc-shaped deflection zone centered on the scan center, and a scanning mechanism 54 which retains a target 50 and which mechanically, reciprocally moves the target 54 in a direction in which the target crosses the ion beam passed from the electrostatic deflector 30 at a given angle.

Abstract: The ion implanting apparatus according to this invention includes: an ion source for producing the ion beam 20 including desired ion species and being shaped in a sheet with a width longer than a narrow width of a substrate 82, a mass separating magnet 36 for selectively deriving the desired ion species by bending the ion beam in a direction perpendicular to a sheet face thereof, a separating slit 72 for selectively making the desired ion species pass through by cooperating with the mass separating magnet 36, and a substrate drive device 86 for reciprocatedly driving the substrate 82 in a direction substantially perpendicular to the sheet face 20s of the ion beam 20 within an irradiating area of the ion beam 20 which has passed through a separating slit 72.

Abstract: An image forming apparatus includes a light source for emitting light constituting an optical signal, an optical waveguide for conducting the light emitted by the light source and an engine portion for receiving the light conducted by the optical waveguide. The engine portion includes a modulator for modulating the received light and a target on which an image corresponding to the optical signal is formed by being exposed by the modulated light.