Abstract: An immersion lithography system includes a wafer stage, a lens for projecting an image onto a wafer located on the wafer stage, an immersion fluid supply for supplying immersion fluid between the lens and the wafer, and a purge fluid conveying device for conveying about the supplied immersion fluid a purge fluid saturated with a component of the immersion fluid.

Abstract: An immersion lithography system includes a wafer stage, a lens for projecting an image onto a wafer located on the wafer stage, an immersion fluid supply for supplying immersion fluid between the lens and the wafer, and a purge fluid conveying device for conveying about the supplied immersion fluid a purge fluid saturated with a component of the immersion fluid.

Abstract: An immersion lithography system includes a wafer stage, a lens for projecting an image onto a wafer located on the wafer stage, an immersion fluid supply for supplying immersion fluid between the lens and the wafer, and a purge fluid conveying device for conveying about the supplied immersion fluid a purge fluid saturated with a component of the immersion fluid.

Abstract: There is provided a nanoimprint method for pressing a template having a pattern of a rugged or uneven shape, to a substrate coated with a curable resin the method including a measuring step for measuring positions of preselected sample measurement points of a predetermined number, which are set for object regions, respectively, of the substrate; a calculating step for performing statistical operations using the measurement positions of the sample measurement points as operation parameters thereby to calculate the deformed states of the object regions; a deforming step for deforming the template based on the deformed states of the object regions calculated at the calculating step; and a pressing step for pressing the deformed template onto the object regions. Accordingly, a nanoimprint method and a nanoimprint apparatus capable of forming a pattern highly precisely on a substrate are provided.

Abstract: This exposure system projects a pattern image onto a substrate via a projection optical system and a liquid to expose the substrate, with a space between the projection optical system and the substrate filled with the liquid. The exposure system is provided with a vaporization preventing unit for preventing the vaporization of the liquid.

Abstract: This exposure system projects a pattern image onto a substrate via a projection optical system and a liquid to expose the substrate, with a space between the projection optical system and the substrate filled with the liquid. The exposure system is provided with a vaporization preventing unit for preventing the vaporization of the liquid.

Abstract: Upon fixing fine particulate active element members, which are carbon nanotube, rod-shaped semiconductor crystal, or the like, in an electronic device at predetermined positions thereof respectively, a method for producing an electronic device includes: dispersing the fine particulate active element members in a dielectric liquid and filling the liquid in a space between a process-objective substrate and a mask which is placed opposite to the substrate and which has predetermined pattern electrodes formed therein; and applying a predetermined voltage to the predetermined electrodes to concentrate the fine particulate active element members at positions which correspond to positions of the pattern electrodes, respectively. In this state, a light is irradiated to the substrate and the fine particulate active element members in the liquid so as to fix the fine particulate active element members to the substrate by a photochemical reaction.

Abstract: This exposure system projects a pattern image onto a substrate via a projection optical system and a liquid to expose the substrate, with a space between the projection optical system and the substrate filled with the liquid. The exposure system is provided with a vaporization preventing unit for preventing the vaporization of the liquid.

Abstract: A method of manufacturing a display device permits use of a high-performance and flexible substrate, without need for a high-temperature process. In a manufacturing method of an active matrix type display device having a plurality of display elements arrayed two-dimensionally, materials (SR0-SR4) of active elements are not formed by direct deposition or the like on a substrate (PL1) forming display elements, but the active elements are formed by separately forming materials of a semiconductor or the like and distributing them on the substrate. The active element materials distributed at locations except for desired locations are subjected to a process of substantially removing electrical continuity thereof so as to prevent undesired electrical continuity.

Abstract: A lithographic apparatus includes a substrate table constructed to hold a substrate to be exposed, a projection system configured to project a patterned radiation beam onto a target portion on a side of the substrate to be exposed, a liquid supply system configured to at least partly fill a region between the substrate and the projection system with a liquid, and a liquid confinement structure. The liquid confinement structure is fixed in a plane substantially perpendicular to an optical axis of the projection system and configured to cooperate with the substrate table in order to restrict the liquid to a region above an upper surface of the substrate table so that a side of the substrate to be exposed is substantially covered in the liquid during exposure.

Abstract: Upon fixing fine particulate active element members AE1 to AE3, which are carbon nanotube, rod-shaped semiconductor crystal, or the like, in an electronic device at predetermined positions thereof respectively, a method for producing an electronic device includes: dispersing the fine particulate active element members in a dielectric liquid 12 and filling the liquid in a space between a process-objective substrate 20 and a mask 1 which is placed opposite to the substrate and which has predetermined pattern electrodes P1C, P1L, P1R formed therein; and applying a predetermined voltage to the predetermined electrodes to concentrate the fine particulate active element members at positions which correspond to positions of the pattern electrodes, respectively. In this state, a light is irradiated to the substrate and the fine particulate active element members in the liquid so as to fix the fine particulate active element members to the substrate by a photochemical reaction.

Abstract: An immersion lithography system includes a wafer stage, a lens for projecting an image onto a wafer located on the wafer stage, an immersion fluid supply for supplying immersion fluid between the lens and the wafer, and a purge fluid conveying device for conveying about the supplied immersion fluid a purge fluid saturated with a component of the immersion fluid.

Abstract: This exposure system projects a pattern image onto a substrate via a projection optical system and a liquid to expose the substrate, with a space between the projection optical system and the substrate filled with the liquid. The exposure system is provided with a vaporization preventing unit for preventing the vaporization of the liquid.

Abstract: A method of manufacturing a display device permits use of a high-performance and flexible substrate, without need for a high-temperature process. In a manufacturing method of an active matrix type display device having a plurality of display elements arrayed two-dimensionally, materials (SR0-SR4) of active elements are not formed by direct deposition or the like on a substrate (PL1) forming display elements, but the active elements are formed by separately forming materials of a semiconductor or the like and distributing them on the substrate. The active element materials distributed at locations except for desired locations are subjected to a process of substantially removing electrical continuity thereof so as to prevent undesired electrical continuity.

Abstract: This exposure system projects a pattern image onto a substrate via a projection optical system and a liquid to expose the substrate, with a space between the projection optical system and the substrate filled with the liquid. The exposure system is provided with a vaporization preventing unit for preventing the vaporization of the liquid.

Abstract: A projection-exposing apparatus has a mask which has a pattern formed with a pitch PR, an illuminating optical system for applying illuminating light from a light source to the mask, a projection optical system for projecting an image of the pattern onto a photosensitive substrate, and a deflecting grating member formed with a pitch PG disposed between the light source and the pattern of the mask for generating diffracted light. The pitch PG of the deflecting grating member is defined in the relation PG=2PR. The diffraction grating member is remote from the pattern on the mask by a distance &Dgr;t, where &Dgr;t≧PG/2NAIL, NAIL being the numerical aperture of the illumination optical system.

Abstract: The present invention relates to a projection exposure method and an exposure apparatus for projecting a pattern on a photo-mask through a projection optical system onto a predetermined photosensitive material. The photosensitive material is a nonlinear photosensitive material in which the effective light intensity distribution is nonlinear to the intensity of incident exposure light. Further, multiple exposure is made with plural patterns having a certain lateral shift therebetween, or multiple exposure is made with shifting the position of an identical pattern, whereby multiple exposure is effected with patterns different in intensity distribution on the photosensitive material. A high-resolution pattern can be formed over the resolution limit of projection optical system by the above arrangement.

Abstract: A projection-exposing apparatus has a mask which has a pattern formed with a pitch P.sub.R, an illuminating optical system for applying illuminating light from a light source to the mask, a projection optical system for projecting an image of the pattern onto a photosensitive substrate, and a deflecting grating member formed with a pitch P.sub.G disposed between the light source and the pattern of the mask for generating diffracted light. The pitch P.sub.G of the deflecting grating member is defined in the relation P.sub.G =2P.sub.R. The diffraction grating member is remote from the pattern on the mask by a distance .DELTA.t, where .DELTA.t .gtoreq.P.sub.G /2NA.sub.IL, NA.sub.IL being the numerical aperture of the illumination optical system.

Abstract: A projection exposure apparatus includes illuminating optical means for illuminating a projection negative, and projection optical means for projection-exposing the projection negative illuminated by the illuminating optical means onto a substrate, the illuminating optical means including light source means for supplying exposure light, annular light source forming means for forming an annular secondary light source by the light from the light source means, and condenser means for condensing the light beam from the annular light source forming means on the projection negative, and is designed to satisfy the following condition:1/3.ltoreq.d.sub.1 /d.sub.2 .ltoreq.2/3,where d.sub.1 is the inner diameter of the annular secondary light source, and d.sub.2 is the outer diameter of the annular secondary light source.

Abstract: A projection exposure apparatus includes illuminating optical means for illuminating a projection negative, and projection optical means for projection-exposing the projection negative illuminated by the illuminating optical means onto a substrate, the illuminating optical means including light source means for supplying exposure light, annular light source forming means for forming an annular secondary light source by the light from the light source means, and condenser means for condensing the light beam from the annular light source forming means on the projection negative, and is designed to satisfy the following condition: ??d1/d2??, where d1 is the inner diameter of the annular secondary light source, and d2 is the outer diameter of the annular secondary light source.