Abstract: A projection exposure apparatus includes illuminating optical means for illuminating a projection negative, and projection optical means for projection-exposing the projection negative illuminated by the illuminating optical means onto a substrate, the illuminating optical means including light source means for supplying exposure light, annular light source forming means for forming an annular secondary light source by the light from the light source means, and condenser means for condensing the light beam from the annular light source forming means on the projection negative, and is designed to satisfy the following condition:1/3.ltoreq.d.sub.1 /d.sub.2 .ltoreq.2/3,where d.sub.1 is the inner diameter of the annular secondary light source, and d.sub.2 is the outer diameter of the annular secondary light source.

Abstract: A projection exposure apparatus is provided with an illumination optical system for illuminating a reticle having a predetermined pattern and a projection optical system having a predetermined numerical aperture for projecting the predetermined pattern of the reticle illuminated by the illumination optical system onto a wafer surface. The projection optical system is arranged so that, with respect to the focusing of an image of the reticle onto the wafer surface, spherical aberration, which depends on the numerical aperture of the projection optical system, shows a positive tendency corresponding to overcorrection in third-order spherical aberration and a negative tendency corresponding to undercorrection in fifth-order spherical aberration.

Abstract: A projection exposure apparatus is provided with an illuminating optical system for illuminating a reticle having a predetermined fine pattern, a projection optical system for projecting the pattern of the reticle onto a wafer, and diaphragm means so constructed as to vary the aperture of a diaphragm of the projection optical system, wherein means for receiving information on the pattern present on the reticle, and means for determining a diaphgram aperture capable of eliminating the high-order diffracted light generated by the pattern of the reticle according to information as stated above and controlling the aperture of variable diaphragm means of the projection optical system, are provided.

Abstract: An apparatus for photochemically processing a silicon wafer placed in a reactive gas by an illuminating energy for etching or film forming purposes. The apparatus includes a reaction chamber in which the silicon wafer is positioned and the reaction chamber is filled with a gas which is photochemically reactive to the illuminating energy. An opening is formed through the wall of the reaction chamber and the silicon wafer is positioned within the chamber apart from the opening. Condensing means for condensing the light energy from the illuminating energy radiating means at around the opening and directing the same into the chamber is arranged outside the chamber.

Abstract: The present invention provides a semiconductor device manufacturing apparatus which, in processing wafers with processing liquid, prevents dust contamination of a wafer surface to be processed, enables fine control of processing liquid temperature, enables the wafer surface to be processed uniformly, permits use of only a small amount of processing liquid, and can be adapted for mixed solvents. The apparatus according to the present invention comprises a cup containing the processing liquid, vacuum chuck means holding the wafer by suction on the upper surface of the wafer, and means by which the wafer surface is brought into dynamic contact with the processing liquid.