Patents by Inventor Masaru Izawa
Masaru Izawa has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11978612Abstract: A plasma processing apparatus includes a processing chamber in which a sample is subjected to plasma processing, a first radio frequency power supply that supplies radio frequency power for generating plasma, a sample stage on which the sample is mounted, and a second radio frequency power supply that supplies radio frequency power to the sample stage, the plasma processing apparatus further includes a DC power supply that applies a DC voltage, that is changed according to a periodically repeated waveform, to the sample stage, and the waveform of one cycle has a period in which amplitude changes by a predetermined amount or more during a predetermined time. Accordingly, charged particles on a wafer surface are removed, a trench shape with high verticality can be obtained, and damage to a film that is not to be etched inside a trench can be reduced.Type: GrantFiled: July 11, 2022Date of Patent: May 7, 2024Assignee: HITACHI HIGH-TECH CORPORATIONInventors: Isao Mori, Masaru Izawa, Naoki Yasui, Norihiko Ikeda, Kazuya Yamada
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Patent number: 11915951Abstract: A plasma processing apparatus includes a stage disposed in a processing chamber for mounting a wafer, a plasma generation chamber disposed above the processing chamber for plasma generation using process gas, a plate member having multiple introduction holes, made of a dielectric material, disposed above the stage and between the processing chamber and the plasma generation chamber, and a lamp disposed around the plate member for heating the wafer. The plasma processing apparatus further includes an external IR light source, an emission fiber arranged in the stage, that outputs IR light from the external IR light source toward a wafer bottom, and a light collection fiber for collecting IR light from the wafer. Data obtained using only IR light from the lamp is subtracted from data obtained also using IR light from the external IR light source during heating of the wafer. Thus, a wafer temperature is determined.Type: GrantFiled: June 26, 2020Date of Patent: February 27, 2024Assignee: HITACHI HIGH-TECH CORPORATIONInventors: Hiroyuki Kobayashi, Nobuya Miyoshi, Kazunori Shinoda, Tatehito Usui, Naoyuki Kofuji, Yutaka Kouzuma, Tomoyuki Watanabe, Kenetsu Yokogawa, Satoshi Sakai, Masaru Izawa
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Patent number: 11842885Abstract: A plasma processing apparatus or a plasma processing method that processes a wafer to be processed, which is placed on a surface of a sample stage arranged in a processing chamber inside a vacuum container, using a plasma formed in the processing chamber, the apparatus or method including processing the wafer by adjusting a first high-frequency power to be supplied to a first electrode arranged inside the sample stage and a second high-frequency power to be supplied, via a resonant circuit, to a second electrode which is arranged in an inner side of a ring-shaped member made of a dielectric arranged on an outer peripheral side of a surface of the sample stage on which the wafer is placed, during the processing.Type: GrantFiled: September 15, 2020Date of Patent: December 12, 2023Assignee: HITACHI HIGH-TECH CORPORATIONInventors: Tooru Aramaki, Kenetsu Yokogawa, Masaru Izawa
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Patent number: 11835465Abstract: Provided is a detecting device of gas components that includes a gas component detecting unit for detection of a light emission of plasma that is formed by re-excitation downstream of an arrangement position of an object to be processed.Type: GrantFiled: February 15, 2019Date of Patent: December 5, 2023Assignee: HITACHI HIGH-TECH CORPORATIONInventors: Yoshifumi Ogawa, Yutaka Kouzuma, Masaru Izawa
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Patent number: 11682542Abstract: A plasma processing device that includes a processing chamber which is disposed in a vacuum vessel and is decompressed internally, a sample stage which is disposed in the processing chamber and on which a sample of a process target is disposed and held, and a plasma formation unit which forms plasma using process gas and processes the sample using the plasma, and the plasma processing device includes: a dielectric film which is disposed on a metallic base configuring the sample stage and connected to a ground and includes a film-like electrode supplied with high-frequency power internally; a plurality of elements which are disposed in a space in the base and have a heat generation or cooling function; and a feeding path which supplies power to the plurality of elements, wherein a filter to suppress a high frequency is not provided on the feeding path.Type: GrantFiled: February 3, 2021Date of Patent: June 20, 2023Assignee: HITACHI HIGH-TECH CORPORATIONInventors: Tooru Aramaki, Kenetsu Yokogawa, Masaru Izawa
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Publication number: 20230058692Abstract: A plasma processing apparatus includes a processing chamber in which a sample is subjected to plasma processing, a first radio frequency power supply that supplies radio frequency power for generating plasma, a sample stage on which the sample is mounted, and a second radio frequency power supply that supplies radio frequency power to the sample stage, the plasma processing apparatus further includes a DC power supply that applies a DC voltage, that is changed according to a periodically repeated waveform, to the sample stage, and the waveform of one cycle has a period in which amplitude changes by a predetermined amount or more during a predetermined time. Accordingly, charged particles on a wafer surface are removed, a trench shape with high verticality can be obtained, and damage to a film that is not to be etched inside a trench can be reduced.Type: ApplicationFiled: July 11, 2022Publication date: February 23, 2023Inventors: Isao Mori, Masaru Izawa, Naoki Yasui, Norihiko Ikeda, Kazuya Yamada
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Patent number: 11557463Abstract: In a vacuum processing apparatus including: a vacuum container including a processing chamber therein; a plasma formation chamber; plate members being arranged between the processing chamber and the plasma formation chamber; and a lamp and a window member being arranged around the plate members, in order that a wafer and the plate members are heated by electromagnetic waves from the lamp, a bottom surface and a side surface of the window member is formed of a member transmitting the electromagnetic waves therethrough.Type: GrantFiled: January 28, 2021Date of Patent: January 17, 2023Assignee: Hitachi High-Tech CorporationInventors: Hiroyuki Kobayashi, Nobuya Miyoshi, Kazunori Shinoda, Kenji Maeda, Yutaka Kouzuma, Satoshi Sakai, Masaru Izawa
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Patent number: 11515167Abstract: Provided is a plasma etching method which enables etching with high accuracy while controlling and reducing surface roughness of a transition metal film. The etching is performed for the transition metal film, which is formed on a sample and contains a transition metal element, by a first step of isotropically generating a layer of transition metal oxide on a surface of the transition metal film while a temperature of the sample is maintained at 100° C. or lower, a second step of raising the temperature of the sample to a predetermined temperature of 150° C. or higher and 250° C. or lower while a complexation gas is supplied to the layer of transition metal oxide, a third step of subliming and removing a reactant generated by an reaction between the complexation gas and the transition metal oxide formed in the first step while the temperature of the sample is maintained at 150° C. or higher and 250° C. or lower, and a fourth step of cooling the sample.Type: GrantFiled: February 1, 2019Date of Patent: November 29, 2022Assignee: HITACHI HIGH-TECH CORPORATIONInventors: Sumiko Fujisaki, Yoshihide Yamaguchi, Hiroyuki Kobayashi, Kazunori Shinoda, Kohei Kawamura, Yutaka Kouzuma, Masaru Izawa
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Patent number: 11424105Abstract: A plasma processing apparatus includes a processing chamber in which a sample is subjected to plasma processing, a first radio frequency power supply that supplies radio frequency power for generating plasma, a sample stage on which the sample is mounted, and a second radio frequency power supply that supplies radio frequency power to the sample stage, the plasma processing apparatus further includes a DC power supply that applies a DC voltage, that is changed according to a periodically repeated waveform, to the sample stage, and the waveform of one cycle has a period in which amplitude changes by a predetermined amount or more during a predetermined time. Accordingly, charged particles on a wafer surface are removed, a trench shape with high verticality can be obtained, and damage to a film that is not to be etched inside a trench can be reduced.Type: GrantFiled: August 5, 2019Date of Patent: August 23, 2022Assignee: HITACHI HIGH-TECH CORPORATIONInventors: Isao Mori, Masaru Izawa, Naoki Yasui, Norihiko Ikeda, Kazuya Yamada
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Patent number: 11276579Abstract: A substrate processing method for reducing a surface roughness of a semiconductor wafer by processing a film structure having at least two types of films beforehand disposed on the substrate, including steps of repeating an adsorption step of supplying activated particles into the processing chamber and allowing the particles to be adsorbed to a surface of a desirable film to be etched in the at least two types of films to allow the particles to combine with a material of the desirable film to form a reaction layer, a removal step of using plasma generated by supplying oxygen into the processing chamber to remove a deposit containing particles adhering to a surface of an undesirable film to be etched in the films, and a desorption step of desorbing and removing the reaction layer on the desirable film to be etched by heating the sample.Type: GrantFiled: November 14, 2018Date of Patent: March 15, 2022Assignee: HITACHI HIGH-TECH CORPORATIONInventors: Hiroyuki Kobayashi, Nobuya Miyoshi, Kazunori Shinoda, Yutaka Kouzuma, Masaru Izawa
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Patent number: 11217454Abstract: The present invention provides a plasma processing method or a plasma processing method, which allows the evenness of etching amounts to increase and the yield of processing to improve. A method for etching a tungsten film includes: a first step of depositing a fluorocarbon layer and forming an intermediate layer that contains tungsten and fluorine and is self-limiting between the fluorocarbon layer and the tungsten film by supplying plasma of an organic gas containing fluorine to a base material having the tungsten film over at least a part of the surface; and a second step of removing the fluorocarbon layer and the intermediate layer by using plasma of an oxygen gas.Type: GrantFiled: April 22, 2019Date of Patent: January 4, 2022Assignee: HITACHI HIGH-TECH CORPORATIONInventors: Kazunori Shinoda, Hiroto Otake, Hiroyuki Kobayashi, Kohei Kawamura, Masaru Izawa
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Publication number: 20210366721Abstract: A substrate processing method for reducing a surface roughness of a semiconductor wafer by processing a film structure having at least two types of films beforehand disposed on the substrate, including steps of repeating an adsorption step of supplying activated particles into the processing chamber and allowing the particles to be adsorbed to a surface of a desirable film to be etched in the at least two types of films to allow the particles to combine with a material of the desirable film to form a reaction layer, a removal step of using plasma generated by supplying oxygen into the processing chamber to remove a deposit containing particles adhering to a surface of an undesirable film to be etched in the films, and a desorption step of desorbing and removing the reaction layer on the desirable film to be etched by heating the sample.Type: ApplicationFiled: November 14, 2018Publication date: November 25, 2021Inventors: Hiroyuki KOBAYASHI, Nobuya MIYOSHI, Kazunori SHINODA, Yutaka KOUZUMA, Masaru IZAWA
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Publication number: 20210358760Abstract: Provided is a plasma etching method which enables etching with high accuracy while controlling and reducing surface roughness of a transition metal film. The etching is performed for the transition metal film, which is formed on a sample and contains a transition metal element, by a first step of isotropically generating a layer of transition metal oxide on a surface of the transition metal film while a temperature of the sample is maintained at 100° C. or lower, a second step of raising the temperature of the sample to a predetermined temperature of 150° C. or higher and 250° C. or lower while a complexation gas is supplied to the layer of transition metal oxide, a third step of subliming and removing a reactant generated by an reaction between the complexation gas and the transition metal oxide formed in the first step while the temperature of the sample is maintained at 150° C. or higher and 250° C. or lower, and a fourth step of cooling the sample.Type: ApplicationFiled: February 1, 2019Publication date: November 18, 2021Inventors: Sumiko FUJISAKI, Yoshihide YAMAGUCHI, Hiroyuki KOBAYASHI, Kazunori SHINODA, Kohei KAWAMURA, Yutaka KOUZUMA, Masaru IZAWA
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Publication number: 20210242030Abstract: The present invention provides a plasma processing method or a plasma processing method, which allows the evenness of etching amounts to increase and the yield of processing to improve. A method for etching a tungsten film includes: a first step of depositing a fluorocarbon layer and forming an intermediate layer that contains tungsten and fluorine and is self-limiting between the fluorocarbon layer and the tungsten film by supplying plasma of an organic gas containing fluorine to a base material having the tungsten film over at least a part of the surface; and a second step of removing the fluorocarbon layer and the intermediate layer by using plasma of an oxygen gas.Type: ApplicationFiled: April 22, 2019Publication date: August 5, 2021Inventors: Kazunori SHINODA, Hiroto OTAKE, Hiroyuki KOBAYASHI, Kohei KAWAMURA, Masaru IZAWA
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Publication number: 20210231571Abstract: Provided is a detecting device of gas components that includes a gas component detecting unit for detection of a light emission of plasma that is formed by re-excitation downstream of an arrangement position of an object to be processed.Type: ApplicationFiled: February 15, 2019Publication date: July 29, 2021Inventors: Yoshifumi OGAWA, Yutaka KOUZUMA, Masaru IZAWA
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Publication number: 20210159055Abstract: A plasma processing device that includes a processing chamber which is disposed in a vacuum vessel and is decompressed internally, a sample stage which is disposed in the processing chamber and on which a sample of a process target is disposed and held, and a plasma formation unit which forms plasma using process gas and processes the sample using the plasma, and the plasma processing device includes: a dielectric film which is disposed on a metallic base configuring the sample stage and connected to a ground and includes a film-like electrode supplied with high-frequency power internally; a plurality of elements which are disposed in a space in the base and have a heat generation or cooling function; and a feeding path which supplies power to the plurality of elements, wherein a filter to suppress a high frequency is not provided on the feeding path.Type: ApplicationFiled: February 3, 2021Publication date: May 27, 2021Inventors: Tooru ARAMAKI, Kenetsu YOKOGAWA, Masaru IZAWA
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Publication number: 20210151298Abstract: In a vacuum processing apparatus including: a vacuum container including a processing chamber therein; a plasma formation chamber; plate members being arranged between the processing chamber and the plasma formation chamber; and a lamp and a window member being arranged around the plate members, in order that a wafer and the plate members are heated by electromagnetic waves from the lamp, a bottom surface and a side surface of the window member is formed of a member transmitting the electromagnetic waves therethrough.Type: ApplicationFiled: January 28, 2021Publication date: May 20, 2021Inventors: Hiroyuki KOBAYASHI, Nobuya MIYOSHI, Kazunori SHINODA, Kenji MAEDA, Yutaka KOUZUMA, Satoshi SAKAl, Masaru IZAWA
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Patent number: 10971369Abstract: In cycle etching in which a depo process and an etching process are repeated, a depo film thickness over a pattern is controlled precisely, and etching is executed to have a desired shape stably for a long time.Type: GrantFiled: January 31, 2018Date of Patent: April 6, 2021Assignee: HITACHI HIGH-TECH CORPORATIONInventors: Miyako Matsui, Tatehito Usui, Masaru Izawa, Kenichi Kuwahara
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Patent number: 10937635Abstract: In a vacuum processing apparatus including: a vacuum container including a processing chamber therein; a plasma formation chamber; plate members being arranged between the processing chamber and the plasma formation chamber; and a lamp and a window member being arranged around the plate members, in order that a wafer and the plate members are heated by electromagnetic waves from the lamp, a bottom surface and a side surface of the window member is formed of a member transmitting the electromagnetic waves therethrough.Type: GrantFiled: April 9, 2019Date of Patent: March 2, 2021Assignee: HITACHI HIGH-TECH CORPORATIONInventors: Hiroyuki Kobayashi, Nobuya Miyoshi, Kazunori Shinoda, Kenji Maeda, Yutaka Kouzuma, Satoshi Sakai, Masaru Izawa
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Patent number: 10930476Abstract: A plasma processing device that includes a processing chamber which is disposed in a vacuum vessel and is decompressed internally, a sample stage which is disposed in the processing chamber and on which a sample of a process target is disposed and held, and a plasma formation unit which forms plasma using process gas and processes the sample using the plasma, and the plasma processing device includes: a dielectric film which is disposed on a metallic base configuring the sample stage and connected to a ground and includes a film-like electrode supplied with high-frequency power internally; a plurality of elements which are disposed in a space in the base and have a heat generation or cooling function; and a feeding path which supplies power to the plurality of elements, wherein a filter to suppress a high frequency is not provided on the feeding path.Type: GrantFiled: July 7, 2016Date of Patent: February 23, 2021Assignee: HITACHI HIGH-TECH CORPORATIONInventors: Tooru Aramaki, Kenetsu Yokogawa, Masaru Izawa