Patents by Inventor Masaru Izawa
Masaru Izawa has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20210043424Abstract: A plasma processing apparatus includes a processing chamber in which a sample is subjected to plasma processing, a first radio frequency power supply that supplies radio frequency power for generating plasma, a sample stage on which the sample is mounted, and a second radio frequency power supply that supplies radio frequency power to the sample stage, the plasma processing apparatus further includes a DC power supply that applies a DC voltage, that is changed according to a periodically repeated waveform, to the sample stage, and the waveform of one cycle has a period in which amplitude changes by a predetermined amount or more during a predetermined time. Accordingly, charged particles on a wafer surface are removed, a trench shape with high verticality can be obtained, and damage to a film that is not to be etched inside a trench can be reduced.Type: ApplicationFiled: August 5, 2019Publication date: February 11, 2021Inventors: Isao Mori, Masaru Izawa, Naoki Yasui, Norihiko Ikeda, Kazuya Yamada
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Publication number: 20200411291Abstract: A plasma processing apparatus or a plasma processing method that processes a wafer to be processed, which is placed on a surface of a sample stage arranged in a processing chamber inside a vacuum container, using a plasma formed in the processing chamber, the apparatus or method including processing the wafer by adjusting a first high-frequency power to be supplied to a first electrode arranged inside the sample stage and a second high-frequency power to be supplied, via a resonant circuit, to a second electrode which is arranged in an inner side of a ring-shaped member made of a dielectric arranged on an outer peripheral side of a surface of the sample stage on which the wafer is placed, during the processing.Type: ApplicationFiled: September 15, 2020Publication date: December 31, 2020Inventors: Tooru ARAMAKI, Kenetsu YOKOGAWA, Masaru IZAWA
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Patent number: 10872779Abstract: An plasma etching method for etching a film layer includes a plurality of times repeating a step set including a first step of introducing a gas containing hydrogen fluoride into a processing chamber and supplying hydrogen fluoride molecules to the surface of an oxide film, a second step of exhausting the interior of the processing chamber in vacuum to remove the hydrogen fluoride, and a third step of introducing a gas containing hydrogen nitride into the processing chamber and supplying hydrogen nitride to the surface of the oxide film to form a compound layer containing nitrogen, hydrogen, and fluorine on the surface of the film layer, and removing the compound layer formed on the surface of the film layer. Foreign object contamination is prevented by inhibiting mixing of hydrogen fluoride gas and hydrogen nitride gas, and the etching amount is controlled by the number of times of repeating application thereof.Type: GrantFiled: February 26, 2019Date of Patent: December 22, 2020Assignee: HITACHI HIGH-TECH CORPORATIONInventors: Nobuya Miyoshi, Hiroyuki Kobayashi, Kazunori Shinoda, Kohei Kawamura, Kazumasa Ookuma, Yutaka Kouzuma, Masaru Izawa
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Patent number: 10811231Abstract: A plasma processing apparatus or a plasma processing method that processes a wafer to be processed, which is placed on a surface of a sample stage arranged in a processing chamber inside a vacuum container, using a plasma formed in the processing chamber, the apparatus or method including processing the wafer by adjusting a first high-frequency power to be supplied to a first electrode arranged inside the sample stage and a second high-frequency power to be supplied, via a resonant circuit, to a second electrode which is arranged in an inner side of a ring-shaped member made of a dielectric arranged on an outer peripheral side of a surface of the sample stage on which the wafer is placed, during the processing.Type: GrantFiled: December 21, 2018Date of Patent: October 20, 2020Assignee: HITACHI HIGH-TECH CORPORATIONInventors: Tooru Aramaki, Kenetsu Yokogawa, Masaru Izawa
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Publication number: 20200328099Abstract: A plasma processing apparatus includes a stage disposed in a processing chamber for mounting a wafer, a plasma generation chamber disposed above the processing chamber for plasma generation using process gas, a plate member having multiple introduction holes, made of a dielectric material, disposed above the stage and between the processing chamber and the plasma generation chamber, and a lamp disposed around the plate member for heating the wafer. The plasma processing apparatus further includes an external IR light source, an emission fiber arranged in the stage, that outputs IR light from the external IR light source toward a wafer bottom, and a light collection fiber for collecting IR light from the wafer. Data obtained using only IR light from the lamp is subtracted from data obtained also using IR light from the external IR light source during heating of the wafer. Thus, a wafer temperature is determined.Type: ApplicationFiled: June 26, 2020Publication date: October 15, 2020Inventors: Hiroyuki KOBAYASHI, Nobuya MIYOSHI, Kazunori SHINODA, Tatehito USUI, Naoyuki KOFUJI, Yutaka KOUZUMA, Tomoyuki WATANABE, Kenetsu YOKOGAWA, Satoshi SAKAI, Masaru IZAWA
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Patent number: 10665516Abstract: The present invention relates to an etching method including a reaction layer forming step of forming a reaction layer by adsorption of a gas on a surface of an etching target material, a desorption step of desorbing the reaction layer after the reaction layer forming step, and a removal step of removing the reaction layer or a deposited film, characterized in that the surface of the etching target material is etched by the reaction layer forming step and the desorption step.Type: GrantFiled: August 30, 2017Date of Patent: May 26, 2020Assignee: Hitachi High-Technologies CorporationInventors: Miyako Matsui, Kenichi Kuwahara, Naoki Yasui, Masaru Izawa, Tatehito Usui, Takeshi Ohmori
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Patent number: 10622269Abstract: The present invention relates to an etching method including a reaction layer forming step of forming a reaction layer by adsorption of a gas on a surface of an etching target material, a desorption step of desorbing the reaction layer after the reaction layer forming step, and a removal step of removing the reaction layer or a deposited film, characterized in that the surface of the etching target material is etched by the reaction layer forming step and the desorption step.Type: GrantFiled: August 30, 2017Date of Patent: April 14, 2020Assignee: Hitachi High-Technologies CorporationInventors: Miyako Matsui, Kenichi Kuwahara, Naoki Yasui, Masaru Izawa, Tatehito Usui, Takeshi Ohmori
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Publication number: 20200006079Abstract: An plasma etching method for etching a film layer includes a plurality of times repeating a step set including a first step of introducing a gas containing hydrogen fluoride into a processing chamber and supplying hydrogen fluoride molecules to the surface of an oxide film, a second step of exhausting the interior of the processing chamber in vacuum to remove the hydrogen fluoride, and a third step of introducing a gas containing hydrogen nitride into the processing chamber and supplying hydrogen nitride to the surface of the oxide film to form a compound layer containing nitrogen, hydrogen, and fluorine on the surface of the film layer, and removing the compound layer formed on the surface of the film layer. Foreign object contamination is prevented by inhibiting mixing of hydrogen fluoride gas and hydrogen nitride gas, and the etching amount is controlled by the number of times of repeating application thereof.Type: ApplicationFiled: February 26, 2019Publication date: January 2, 2020Inventors: Nobuya MIYOSHI, Hiroyuki KOBAYASHI, Kazunori SHINODA, Kohei KAWAMURA, Kazumasa OOKUMA, Yutaka KOUZUMA, Masaru IZAWA
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Patent number: 10418254Abstract: In an etching method of etching a tungsten film, the method is provided to execute a generating a surface reaction layer on a tungsten film that is formed on a surface of a base material by supplying a reactive species including fluorine which is generated in plasma onto the base material for a first predetermined time in a state where the base material of which the tungsten film is formed on at least a portion of the surface is cooled to a melting point temperature or lower of a tungsten fluoride, and a removing the surface reaction layer that is generated on the tungsten film by heating the base material of which the surface reaction layer is generated on the tungsten film to a boiling point temperature or higher of the tungsten fluoride for a second predetermined time.Type: GrantFiled: February 27, 2018Date of Patent: September 17, 2019Assignee: HITACHI HIGH-TECHNOLOGIES CORPORATIONInventors: Kazunori Shinoda, Naoyuki Kofuji, Hiroyuki Kobayashi, Nobuya Miyoshi, Kohei Kawamura, Masaru Izawa, Kenji Ishikawa, Masaru Hori
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Publication number: 20190237337Abstract: In cycle etching in which a depo process and an etching process are repeated, a depo film thickness over a pattern is controlled precisely, and etching is executed to have a desired shape stably for a long time.Type: ApplicationFiled: January 31, 2018Publication date: August 1, 2019Inventors: Miyako MATSUI, Tatehito USUI, Masaru IZAWA, Kenichi KUWAHARA
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Publication number: 20190237302Abstract: In a vacuum processing apparatus including: a vacuum container including a processing chamber therein; a plasma formation chamber; plate members being arranged between the processing chamber and the plasma formation chamber; and a lamp and a window member being arranged around the plate members, in order that a wafer and the plate members are heated by electromagnetic waves from the lamp, a bottom surface and a side surface of the window member is formed of a member transmitting the electromagnetic waves therethrough.Type: ApplicationFiled: April 9, 2019Publication date: August 1, 2019Inventors: Hiroyuki KOBAYASHI, Nobuya MIYOSHI, Kazunori SHINODA, Kenji MAEDA, Yutaka KOUZUMA, Satoshi SAKAl, Masaru IZAWA
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Patent number: 10325781Abstract: A method for etching a titanium nitride film includes a first process of supplying reactive species, which include hydrogen and fluorine, to a base material including a titanium nitride film on at least a part of a surface, and a second process of vacuum-heating the base material to remove the surface reaction layer that is generated on the surface of the titanium nitride film in the first process.Type: GrantFiled: September 8, 2017Date of Patent: June 18, 2019Assignee: Hitachi High-Technologies CorporationInventors: Kazunori Shinoda, Satoshi Sakai, Masaru Izawa, Nobuya Miyoshi, Hiroyuki Kobayashi, Yutaka Kouzuma, Kenji Ishikawa, Masaru Hori
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Patent number: 10290472Abstract: In a vacuum processing apparatus including: a vacuum container including a processing chamber therein; a plasma formation chamber; plate members being arranged between the processing chamber and the plasma formation chamber; and a lamp and a window member being arranged around the plate members, in order that a wafer and the plate members are heated by electromagnetic waves from the lamp, a bottom surface and a side surface of the window member is formed of a member transmitting the electromagnetic waves therethrough.Type: GrantFiled: March 17, 2016Date of Patent: May 14, 2019Assignee: Hitachi High-Technologies CorporationInventors: Hiroyuki Kobayashi, Nobuya Miyoshi, Kazunori Shinoda, Kenji Maeda, Yutaka Kouzuma, Satoshi Sakai, Masaru Izawa
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Publication number: 20190122864Abstract: A plasma processing apparatus or a plasma processing method that processes a wafer to be processed, which is placed on a surface of a sample stage arranged in a processing chamber inside a vacuum container, using a plasma formed in the processing chamber, the apparatus or method including processing the wafer by adjusting a first high-frequency power to be supplied to a first electrode arranged inside the sample stage and a second high-frequency power to be supplied, via a resonant circuit, to a second electrode which is arranged in an inner side of a ring-shaped member made of a dielectric arranged on an outer peripheral side of a surface of the sample stage on which the wafer is placed, during the processing.Type: ApplicationFiled: December 21, 2018Publication date: April 25, 2019Inventors: Tooru ARAMAKI, Kenetsu YOKOGAWA, Masaru IZAWA
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Publication number: 20190067032Abstract: In an etching method of etching a tungsten film, the method is provided to execute a generating a surface reaction layer on a tungsten film that is formed on a surface of a base material by supplying a reactive species including fluorine which is generated in plasma onto the base material for a first predetermined time in a state where the base material of which the tungsten film is formed on at least a portion of the surface is cooled to a melting point temperature or lower of a tungsten fluoride, and a removing the surface reaction layer that is generated on the tungsten film by heating the base material of which the surface reaction layer is generated on the tungsten film to a boiling point temperature or higher of the tungsten fluoride for a second predetermined time.Type: ApplicationFiled: February 27, 2018Publication date: February 28, 2019Inventors: Kazunori SHINODA, Naoyuki KOFUJI, Hiroyuki KOBAYASHI, Nobuya MIYOSHI, Kohei KAWAMURA, Masaru IZAWA, Kenji ISHIKAWA, Masaru HORI
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Patent number: 10217611Abstract: A plasma processing apparatus or a plasma processing method that processes a wafer to be processed, which is placed on a surface of a sample stage arranged in a processing chamber inside a vacuum container, using a plasma formed in the processing chamber, the apparatus or method including processing the wafer by adjusting a first high-frequency power to be supplied to a first electrode arranged inside the sample stage and a second high-frequency power to be supplied, via a resonant circuit, to a second electrode which is arranged in an inner side of a ring-shaped member made of a dielectric arranged on an outer peripheral side of a surface of the sample stage on which the wafer is placed, during the processing.Type: GrantFiled: March 1, 2016Date of Patent: February 26, 2019Assignee: Hitachi High-Technologies CorporationInventors: Tooru Aramaki, Kenetsu Yokogawa, Masaru Izawa
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Patent number: 10192720Abstract: A plasma processing apparatus includes a processing chamber to be depressurized in a vacuum vessel with a sidewall made of a transparent or translucent dielectric material, a stage in the processing chamber to mount a wafer thereon, a coil disposed around an outer side of the sidewall and supplied with radio-frequency power for forming plasma above the stage in the processing chamber, a lamp disposed above the coil outside the vacuum vessel which radiates light onto the wafer, and a reflector disposed the coil and reflecting light to irradiate an inside of the processing chamber.Type: GrantFiled: July 14, 2016Date of Patent: January 29, 2019Assignee: Hitachi High-Technologies CorporationInventors: Hiroyuki Kobayashi, Nobuya Miyoshi, Kazunori Shinoda, Kenji Maeda, Satoshi Sakai, Masaru Izawa
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Patent number: 10132207Abstract: The variable valve actuating device (20) comprises a valve lifter (24) interposed between a swing end of a rocker arm 22 and a stem end of an engine valve (17), and a switch pin (53) slidably received in the valve lifter (24) so as to selectively abut the end surface of the valve stem as the valve lifter is actuated by a cam (21a). The swing end of the rocker arm abuts an upper end of a projection (55) projecting from the upper end of the valve lifter via an engagement feature (26b, 55a) that prevents a rotational movement of the valve lifter relative to the swing end around the axial line of the valve stem.Type: GrantFiled: June 15, 2017Date of Patent: November 20, 2018Assignees: HONDA MOTOR CO., LTD., TANAKA SEIMITSU KOGYO CO., LTD.Inventors: Kaori Takehana, Masaru Izawa
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Patent number: 10128141Abstract: A plasma processing apparatus includes: a refrigerating cycle including a refrigerant passage, a compressor, and a condenser, all of which are coupled in this order, and through which a refrigerant flows in this order, the refrigerant passage being disposed inside a sample stage and through which the refrigerant flows to serve as an evaporator; first and second expansion valves which are interposed between the condenser and the refrigerant passage and between the refrigerant passage and the compressor respectively in the refrigerating cycle; a vaporizer that is interposed between the second expansion valve and the compressor in the refrigerating cycle and which heats and vaporizes the refrigerant; and a controller which regulates opening and closing of the first and second expansion valves and regulates a refrigerant heat exchange amount of the condenser or vaporizer based on a refrigerant temperature between the condenser and the second expansion valve.Type: GrantFiled: February 19, 2014Date of Patent: November 13, 2018Assignee: HITACHI HIGH-TECHNOLOGIES CORPORATIONInventors: Takumi Tandou, Go Miya, Masaru Izawa, Hiromichi Kawasaki
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Patent number: 10090160Abstract: There is provided dry etching apparatus including a stage on which a wafer is placed, an antenna electrode, a high frequency power supply, a shower plate, and an RF bias power supply. Further, a bias path controller is provided on the side of the antenna electrode. The bias path controller resonates in series with the static reactance formed by the shower plate with respect to the frequency of the RF bias. Then, the bias path controller changes and grounds the impedance by the variable inductive reactance. With this mechanism, highly uniform etching can be achieved even if a shower plate of quartz is used for corrosive gases.Type: GrantFiled: January 21, 2016Date of Patent: October 2, 2018Assignee: HITACHI HIGH-TECHNOLOGIES CORPORATIONInventors: Masahito Mori, Masaru Izawa, Katsushi Yagi