Abstract: A pressure sensitive adhesive sheet containing, on a substrate or a release material, a resin layer, at least a surface (?) of the resin layer being opposite to the side of the substrate or being opposite to the side which the release material is provided, having pressure sensitive adhesiveness, the surface (?) having one or more concave portions, the concave portions having irregular shapes. The pressure sensitive adhesive sheet has an excellent air escape property capable of easily removing air accumulation that may be formed on attaching to an adherend, and is excellent in pressure sensitive adhesion characteristics.

Abstract: Provided is a pressure sensitive adhesive sheet containing a resin layer on a substrate or a release material, at least a surface (?) of the resin layer being opposite to the side thereof on which the substrate or the release material is provided having pressure sensitive adhesiveness, wherein, when a smooth surface of a light transmissive adherend having a smooth surface is attached to the surface (?), one or more concave portion (G) not kept in contact with the smooth surface exist on the surface (?), and the shapes of the one or more concave portions (G) have irregular shapes. The pressure sensitive adhesive sheet has excellent air escape property capable of readily removing air accumulation that may be formed on attaching to an adherend, and has good pressure sensitive adhesion characteristics.

Abstract: A sealing sheet having a resin layer comprising a resin part (A) formed by a resin composition containing one or more resins selected from the group consisting of an acrylic-based resin and a urethane-based resin, and a resin part (B) having a water vapor transmission rate measured in conformity with JIS K 7129 of 15 g/m2/day or less, in which the resin part (A) and the resin part (B) are present on at least one surface of the resin layer. The sealing sheet excels in a suppressing effect on moisture intrusion of the sealing sheet itself, and, when manufacturing a sealing structure, excels in an effect to prevent moisture intrusion into the sealing structure from between a substrate (adherend) and the sealing sheet.

Abstract: A pressure sensitive adhesive sheet containing, on a substrate or a release material, a resin layer, at least a surface (?) of the resin layer being opposite to the side of the substrate or being opposite to the side which the release material is provided, having pressure sensitive adhesiveness, the surface (?) having one or more concave portions, the concave portions having irregular shapes. The pressure sensitive adhesive sheet has an excellent air escape property capable of easily removing air accumulation that may be formed on attaching to an adherend, and is excellent in pressure sensitive adhesion characteristics.

Abstract: Provided is a pressure sensitive adhesive sheet containing a resin layer on a substrate or a release material, at least a surface (?) of the resin layer being opposite to the side thereof on which the substrate or the release material is provided having pressure sensitive adhesiveness, wherein one or more concave portions formed not by transferring an emboss pattern exist on the surface (?).

Abstract: Provided is a pressure sensitive adhesive sheet containing a resin layer on a substrate or a release material, at least a surface (?) of the resin layer being opposite to the side thereof on which the substrate or the release material is provided having pressure sensitive adhesiveness, wherein, when a smooth surface of a light transmissive adherend having a smooth surface is attached to the surface (?), one or more concave portion (G) not kept in contact with the smooth surface exist on the surface (?), and the shapes of the one or more concave portions (G) have irregular shapes. The pressure sensitive adhesive sheet has excellent air escape property capable of readily removing air accumulation that may be formed on attaching to an adherend, and has good pressure sensitive adhesion characteristics.

Abstract: In order to prevent a sample from thermally expanding and contracting when the sample is placed on a sample stage inside a vacuum chamber, the related art has proposed a coping method of awaiting observation by setting a standby time from when the wafer is conveyed into the vacuum chamber until the wafer and the sample table are brought into thermal equilibrium. In addition, the coping method is configured so as to await the observation until the wafer is cooled down to room temperature when the wafer is heated in the previous step. Consequently, throughput of an apparatus decreases. A temperature control mechanism which can control temperature of the sample is installed inside a mini-environment device. The sample temperature control mechanism controls the temperature of the sample inside the mini-environment device so as to become a setting temperature which is set in view of a lowered temperature of the sample inside a load lock chamber.

Abstract: In order to prevent a sample from thermally expanding and contracting when the sample is placed on a sample stage inside a vacuum chamber, the related art has proposed a coping method of awaiting observation by setting a standby time from when the wafer is conveyed into the vacuum chamber until the wafer and the sample table are brought into thermal equilibrium. In addition, the coping method is configured so as to await the observation until the wafer is cooled down to room temperature when the wafer is heated in the previous step. Consequently, throughput of an apparatus decreases. A temperature control mechanism which can control temperature of the sample is installed inside a mini-environment device. The sample temperature control mechanism controls the temperature of the sample inside the mini-environment device so as to become a setting temperature which is set in view of a lowered temperature of the sample inside a load lock chamber.

Abstract: In the case of inspecting samples having different sizes by means of a semiconductor inspecting apparatus, a primary electron beam bends since distribution is disturbed on an equipotential surface at the vicinity of the sample at the time of inspecting vicinities of the sample, and what is called a positional shift is generated. A potential correcting electrode is arranged outside the sample and at a position lower than the sample lower surface, and a potential lower than that of the sample is applied. Furthermore, a voltage to be applied to the potential correcting electrode is controlled corresponding to a distance between the inspecting position and a sample outer end, sample thickness and irradiation conditions of the primary electron beam.

Abstract: A charged particle radiation device includes a sample chamber in which a sample stage adapted to mount a sample is installed, a charged particle radiation irradiation section adapted to irradiate the sample with a charged particle radiation to observe and fabricate the sample, sidewalls installed on a periphery of the sample chamber and the charged particle radiation irradiation section, a ceiling board installed on a plane located in an upper part of the sidewalls, and a sound absorbing structure section disposed below the ceiling board, and including a plurality of hole sections and a hollow section communicated with the hole sections. The sound absorbing structure section has an absorption band including a frequency band of a standing wave generated in a space surrounded by the sidewalls and the ceiling board. Further, a soundproof cover may include the sidewalls, ceiling board and sound absorbing structure.

Abstract: Charged particle beam apparatus arrangements in which either a first noise absorber which provides noise absorbing performance specialized for a first frequency range including the natural frequency of the charged particle beam apparatus as reference, or a second noise absorber which provides noise absorbing performance specialized for a second frequency range including the frequency of acoustic standing waves generated within the cover as reference, or both of the first and second noise absorbers is/are disposed within a cover of the charged particle beam apparatus.

Abstract: Disclosed is a smaller and lighter stage device which can be applied to a device such as a length measurement SEM for inspecting and/or evaluating a semiconductor, and in which the effect of a magnetic field on an electron beam can be reduced. Linear motors 110, 111, 112, 113 are disposed on four sides of a base 104 to be distanced from an electron beam projection position (the center of the stage device), respectively. The base 104 has dimensions substantially equivalent to minimum dimensions determined by the size of a top table 101 and a movable stroke. Linear motor stators 110, 112 are configured to have a “C-shaped” structure whose opening faces outside of the stage device, respectively. Further, a movable table is coupled to the top table via linear guides 107, 109 composed of a nonmagnetic material or roller mechanisms composed of a nonmagnetic material.

Abstract: It is an object of the present invention to provide an electron microscope for properly applying a retarding voltage to a sample which is brought into electrical conduction.

Abstract: The charged particle beam device has a problem that a symmetry of equipotential distribution is disturbed near the outer edge of a specimen, an object being evaluated, causing a charged particle beam to deflect there. An electrode plate installed inside the specimen holding mechanism of electrostatic attraction type is formed of an inner and outer electrode plates arranged concentrically. The outer electrode plate is formed to have an outer diameter larger than that of the specimen. The dimensions of the electrode plates are determined so that an overlapping area of the outer electrode plate and the specimen is substantially equal to an area of the inner electrode plate. The inner electrode plate is impressed with a voltage of a positive polarity with respect to a reference voltage and of an arbitrary magnitude, and the outer electrode is impressed with a voltage of a negative polarity and of an arbitrary magnitude.

Abstract: There is provided a technique that is capable of attracting a sample without making the voltage applied to an electrostatic chuck unnecessarily large. Attraction experiments with respect to the electrostatic chuck are performed using a testing sample whose degree of warp and pattern of warp are known, and a critical application voltage at which the attraction state changes from “bad” to “good” is found. When measuring an inspection target sample, the flatness of the inspection target sample is measured, and the degree of warp and pattern of warp of the inspection target sample are detected. Based on the degree of warp and pattern of warp of the inspection target sample and on the known critical application voltage, the application voltage for the electrostatic chuck is set.

Abstract: In the case of inspecting samples having different sizes by means of a semiconductor inspecting apparatus, a primary electron beam bends since distribution is disturbed on an equipotential surface at the vicinity of the sample at the time of inspecting vicinities of the sample, and what is called a positional shift is generated. A potential correcting electrode is arranged outside the sample and at a position lower than the sample lower surface, and a potential lower than that of the sample is applied. Furthermore, a voltage to be applied to the potential correcting electrode is controlled corresponding to a distance between the inspecting position and a sample outer end, sample thickness and irradiation conditions of the primary electron beam.

Abstract: Currently, there is no noise-proof cover, particularly noise-proof cover used in a clean room, which absorbs noise by a structure specialized for an estimated frequency of noise produced by environmental noise. Therefore, efficient noise absorption is still difficult. Accordingly, the invention provides a charged particle beam apparatus in which either a first noise absorber which provides noise absorbing performance specialized for a first frequency range including the natural frequency of the charged particle beam apparatus as reference, or a second noise absorber which provides noise absorbing performance specialized for a second frequency range including the frequency of acoustic standing waves generated within the cover as reference, or both of the first and second noise absorbers is/are disposed within a cover of the charged particle beam apparatus.

Abstract: In the case of inspecting samples having different sizes by means of a semiconductor inspecting apparatus, a primary electron beam bends since distribution is disturbed on an equipotential surface at the vicinity of the sample at the time of inspecting vicinities of the sample, and what is called a positional shift is generated. A potential correcting electrode is arranged outside the sample and at a position lower than the sample lower surface, and a potential lower than that of the sample is applied. Furthermore, a voltage to be applied to the potential correcting electrode is controlled corresponding to a distance between the inspecting position and a sample outer end, sample thickness and irradiation conditions of the primary electron beam.

Abstract: A charged particle radiation device includes a sample chamber in which a sample stage adapted to mount a sample is installed, a charged particle radiation irradiation section adapted to irradiate the sample with a charged particle radiation to observe and fabricate the sample, sidewalls installed on a periphery of the sample chamber and the charged particle radiation irradiation section, a ceiling board installed on a plane located in an upper part of the sidewalls, and a sound absorbing structure section disposed below the ceiling board, and including a plurality of hole sections and a hollow section communicated with the hole sections. The sound absorbing structure section has an absorption band including a frequency band of a standing wave generated in a space surrounded by the sidewalls and the ceiling board. Further, a soundproof cover may include the sidewalls, ceiling board and sound absorbing structure.

Abstract: In the case of inspecting samples having different sizes by means of a semiconductor inspecting apparatus, a primary electron beam bends since distribution is disturbed on an equipotential surface at the vicinity of the sample at the time of inspecting vicinities of the sample, and what is called a positional shift is generated. A potential correcting electrode is arranged outside the sample and at a position lower than the sample lower surface, and a potential lower than that of the sample is applied. Furthermore, a voltage to be applied to the potential correcting electrode is controlled corresponding to a distance between the inspecting position and a sample outer end, sample thickness and irradiation conditions of the primary electron beam.