Abstract: A content control device is provided with a receiving content accumulation unit which accumulates contents received from a terminal device connected via a network, an operation history information managing unit which manages operation history information indicative of a history on operations with respect to a first content accumulated in the receiving content accumulation unit, and a content control unit which generates control information for controlling a second content based on the operation history information, the second content corresponding to the first content and accumulated in the terminal device.

Abstract: A content control device is provided with a receiving content accumulation unit which accumulates contents received from a terminal device connected via a network, an operation history information managing unit which manages operation history information indicative of a history on operations with respect to a first content accumulated in the receiving content accumulation unit, and a content control unit which generates control information for controlling a second content based on the operation history information, the second content corresponding to the first content and accumulated in the terminal device.

Abstract: An E-mail transmission control device comprises: a mail information storage unit; a destination information storage unit; an E-mail transmission unit; an error information reception unit for receiving error information; an error information decision unit for deciding whether or not the error information satisfies a predetermined condition; a destination excluding unit for executing the destination indicated by the destination information owned by the error information, from the candidates of the destination, in case the error information decision unit decides the satisfaction of the predetermined condition. The electronic transmission control device further comprises a re-transmission decision unit for deciding whether or not a predetermined condition is satisfied, after the destination excluding unit performed the exclusion. The E-mail transmission unit transmits the E-mail to the excluded destination in case the re-transmission decision unit decides the satisfaction of the predetermined condition.

Abstract: A zirconium silicate layer 103 is formed on a silicon substrate 100, a zirconium oxide layer 102 is also formed on the zirconium silicate layer 103, and the zirconium oxide layer 102 is then removed, thereby forming a gate insulating film 104 made of the zirconium silicate layer 103.

Abstract: A metal target, at least the surface region of which has been oxidized, is prepared in a chamber. Then, a sputtering process is performed on the metal target with an inert gas ambient created in the chamber, thereby depositing a first metal oxide film as a lower part of a gate insulating film over a semiconductor substrate. Next, a reactive sputtering process is performed on the metal target with a mixed gas ambient, containing the inert gas and an oxygen gas, created in the chamber, thereby depositing a second metal oxide film as a middle or upper part of the gate insulating film over the first metal oxide film.

Abstract: A video game device in which a game screen displayed on a monitor is controlled by operating an operation unit, the video game device comprises a character display control unit for displaying a player character in such a manner as to be rotatable together with a throwing object character and making such a display that the throwing object character is thrown in a specified direction by the player character when the operation unit is operated at a specified timing, and a guide display control unit for setting a guide display area in a partial area of the game screens, displaying a throwing mark in the guide display area which mark moves in response to a rotation of the throwing object character, and displaying an area mark specifying a throwing area of the throwing object character in association with the guide display area.

Abstract: A zirconium silicate layer 103 is formed on a silicon substrate 100, a zirconium oxide layer 102 is also formed on the zirconium silicate layer 103, and the zirconium oxide layer 102 is then removed, thereby forming a gate insulating film 104 made of the zirconium silicate layer 103.

Abstract: After an insulating film serving as a gate insulating film is formed on a semiconductor substrate, a titanium nitride film is deposited by chemical vapor deposition on the insulating film. Then, a tungsten film is deposited by sputtering on the titanium nitride film. Subsequently, a multilayer film composed of the tungsten film and the titanium nitride film is patterned to form a gate electrode composed of the multilayer film.

Abstract: A first gate electrode for an n-channel MOSFET includes first and second metal films and a low-resistivity metal film. The first metal film has been deposited on a first gate insulating film and is made of a first metal having a work function located closer to the conduction band of silicon with reference to an intermediate level of silicon bandgap. The second metal film has been deposited on the first metal film and is made of a second metal having a work function located closer to the valence band of silicon with reference to the intermediate level of silicon bandgap. The low-resistivity metal film has been deposited on the second metal film. A second gate electrode for a p-channel MOSFET includes: the second metal film, which has been deposited on a second gate insulating film and is made of the second metal; and the low-resistivity metal film deposited on the second metal film.

Abstract: A metal target, at least the surface region of which has been oxidized, is prepared in a chamber. Then, a sputtering process is performed on the metal target with an inert gas ambient created in the chamber, thereby depositing a first metal oxide film as a lower part of a gate insulating film over a semiconductor substrate. Next, a reactive sputtering process is performed on the metal target with a mixed gas ambient, containing the inert gas and an oxygen gas, created in the chamber, thereby depositing a second metal oxide film as a middle or upper part of the gate insulating film over the first metal oxide film.

Abstract: After an insulating film serving as a gate insulating film is formed on a semiconductor substrate, a titanium nitride film is deposited by chemical vapor deposition on the insulating film. Then, a tungsten film is deposited by sputtering on the titanium nitride film. Subsequently, a multilayer film composed of the tungsten film and the titanium nitride film is patterned to form a gate electrode composed of the multilayer film.

Abstract: A metal target, at least the surface region of which has been oxidized, is prepared in a chamber. Then, a sputtering process is performed on the metal target with an inert gas ambient created in the chamber, thereby depositing a first metal oxide film as a lower part of a gate insulating film over a semiconductor substrate. Next, a reactive sputtering process is performed on the metal target with a mixed gas ambient, containing the inert gas and an oxygen gas, created in the chamber, thereby depositing a second metal oxide film as a middle or upper part of the gate insulating film over the first metal oxide film.

Abstract: A semiconductor device comprises a first MOSFET and a second MOSFET. The first MOSFET includes a first gate insulating film formed on a semiconductor substrate and having a relatively large thickness and a first gate electrode composed of a polysilicon film formed on the first gate insulating film. The second MOSFET includes a second gate insulating film formed on the semiconductor substrate and having a relatively small thickness and a second gate electrode composed of a metal film made of a refractory metal or a compound of a refractory metal and formed on the second gate insulating film.

Abstract: A semiconductor device comprises a first MOSFET and a second MOSFET. The first MOSFET includes a first gate insulating film formed on a semiconductor substrate and having a relatively large thickness and a first gate electrode composed of a polysilicon film formed on the first gate insulating film. The second MOSFET includes a second gate insulating film formed on the semiconductor substrate and having a relatively small thickness and a second gate electrode composed of a metal film made of a refractory metal or a compound of a refractory metal and formed on the second gate insulating film.

Abstract: A semiconductor device includes: a first-surface-channel-type MOSFET having a first threshold voltage; and a second-surface-channel-type MOSFET with a second threshold voltage having an absolute value greater than an absolute value of said first threshold voltage. The first-surface-channel-type MOSFET includes: a first gate insulating film formed on a semiconductor substrate; and a first gate electrode, which has been formed out of a poly-silicon film over the first gate insulating film. The second-surface-channel-type MOSFET includes: a second gate insulating film formed on the semiconductor substrate; and a second gate electrode, which has been formed out of a refractory metal film over the second gate insulating film. The refractory metal film is made of a refractory metal or a compound thereof.

Abstract: After an insulating film, serving as a gate insulating film, is formed on a semiconductor layer formed on a substrate, a target made of tungsten is sputtered in an ambient of a gas mixture of an argon gas and a nitrogen gas. In the sputtering process, a surface region of the insulating film serving as the gate insulating film is nitrided, while a crystal mixture film composed of a mixture of a tungsten crystal and a tungsten nitride crystal is deposited on the insulating film. The crystal mixture film serves to compose at least a part of a gate electrode.

Abstract: A metal target, at least the surface region of which has been oxidized, is prepared in a chamber. Then, a sputtering process is performed on the metal target with an inert gas ambient created in the chamber, thereby depositing a first metal oxide film as a lower part of a gate insulating film over a semiconductor substrate. Next, a reactive sputtering process is performed on the metal target with a mixed gas ambient, containing the inert gas and an oxygen gas, created in the chamber, thereby depositing a second metal oxide film as a middle or upper part of the gate insulating film over the first metal oxide film.

Abstract: A semiconductor device comprises a first MOSFET and a second MOSFET. The first MOSFET includes a first gate insulating film formed on a semiconductor substrate and having a relatively large thickness and a first gate electrode composed of a polysilicon film formed on the first gate insulating film The second MOSFET includes a second gate insulating film formed on the semiconductor substrate and having a relatively small thickness and a second gate electrode composed of a metal film made of a refractory metal or a compound of a refractory metal and formed on the second gate insulating film.

Abstract: A semiconductor device comprises a first MOSFET and a second MOSFET. The first MOSFET includes a first gate insulating film formed on a semiconductor substrate and having a relatively large thickness and a first gate electrode composed of a polysilicon film formed on the first gate insulating film. The second MOSFET includes a second gate insulating film formed on the semiconductor substrate and having a relatively small thickness and a second gate electrode composed of a metal film made of a refractory metal or a compound of a refractory metal and formed on the second gate insulating film.

Abstract: A first gate electrode for an n-channel MOSFET includes first and second metal films and a low-resistivity metal film. The first metal film has been deposited on a first gate insulating film and is made of a first metal having a work function located closer to the conduction band of silicon with reference to an intermediate level of silicon bandgap. The second metal film has been deposited on the first metal film and is made of a second metal having a work function located closer to the valence band of silicon with reference to the intermediate level of silicon bandgap. The low-resistivity metal film has been deposited on the second metal film. A second gate electrode for a p-channel MOSFET includes: the second metal film, which has been deposited on a second gate insulating film and is made of the second metal; and the low-resistivity metal film deposited on the second metal film.