Abstract: Disclosed are new methods comprising the use of in situ hybridization to detect abnormal nucleic acid sequence copy numbers in one or more genomes wherein repetitive sequences that bind to multiple loci in a reference chromosome spread are either substantially removed and/or their hybridization signals suppressed. The invention termed Comparative Genomic Hybridization (CGH) provides for methods of determining the relative number of copies of nucleic acid sequences in one or more subject genomes or portions thereof (for example, a tumor cell) as a function of the location of those sequences in a reference genome (for example, a normal human genome). The intensity(ies) of the signals from each labeled subject nucleic acid and/or the differences in the ratios between different signals from the labeled subject nucleic acid sequences are compared to determine the relative copy numbers of the nucleic acid sequences in the one or more subject genomes as a function of position along the reference chromosome spread.

Abstract: Provided is an oxygen absorbing composition and an oxygen absorbing resin composition employing such oxygen absorbing composition, which demonstrate a favorable oxygen absorbing performance even in a low-humidity environment. Use of such oxygen absorbing composition and oxygen absorbing resin composition allows preservation of medicines or foods etc. which are in a dry state and disfavoring moisture.

Abstract: A method of manufacturing a semiconductor substrate includes the steps of laminating a first substrate having a single-crystal semiconductor region with a second substrate having an insulator region, and selectively removing the portion of the first substrate of the laminated substrates where lamination strength is weak.

Abstract: Disclosed is a process for preparing a water-soluble tricarboxypolysaccharide which includes the step of oxidizing an &agr;-bonding type polysaccharide with a ruthenium compound and an oxidizing agent. The water-soluble tricarboxypolysaccharide, having a high carboxyl group content, can easily and inexpensively be prepared in a high yield without any problem of a post-treatment after the reaction, and thus the present invention is desirable as an industrial preparation process of the water-soluble tricarboxpolysaccharide.

Abstract: A semiconductor device comprises a substrate comprising a semiconductor monocrystalline substrate on one principal surface side of which a light-transmitting film is formed, the substrate being prepared by removing from the other principal surface side thereof a semiconductor monocrystalline region present right beneath the light-transmitting film, a non-monocrystalline semiconductor element formed on the light-transmitting film, and a monocrystalline semiconductor element formed in a semiconductor monocrystalline region remaining in the substrate, the non-monocrystalline semiconductor element and the monocrystalline semiconductor element being electrically connected.

Abstract: An engine generator includes an engine having an intake device and an exhaust device which are connected to an engine body, a generator connected to the engine, and a fuel tank for supplying fuel to the engine. The engine, the generator and the fuel tank are mounted on a frame. In this engine generator, the intake device and the exhaust device are connected to an upper portion of the engine body having a cylinder axis extending vertically to protrude to opposite sides from the engine body, and the fuel tank is disposed sideways of the engine body and the generator below the intake device or the exhaust device. Thus, when a vertical engine is used, the fuel tank can be effectively disposed to avoid the production of a wasteful space, thereby providing reductions in size, weight and cost.

Abstract: There is provided a method for flue gas desulfurization which is capable of conducting minute control of oxidation and which is capable of maintaining the concentration of sulfurous acid in an absorbent liquid within a proper range in a highly reliable and efficient manner, even in the case where an abrupt change occurs in the operational conditions of the system. In the method for controlling the oxidation in flue gas desulfurization, the value of proportional sensitivity K in the feed back control process, which is based primarily on the oxidation-reduction potential, is increased depending on the deviation .epsilon. in a region where the detected oxidation reduction potential value PN is below the target oxidation reduction potential value SN in correspondence with the characteristic change of the oxidation-reduction potential against the concentration of sulfurous acid.

Abstract: Disclosed are new methods comprising the use of in situ hybridization to detect abnormal nucleic acid sequence copy numbers in one or more genomes wherein repetitive sequences that bind to multiple loci in a reference chromosome spread are either substantially removed and/or their hybridization signals suppressed. The invention termed Comparative Genomic Hybridization (CGH) provides for methods of determining the relative number of copies of nucleic acid sequences in one or more subject genomes or portions thereof (for example, a tumor cell) as a function of the location of those sequences in a reference genome (for example, a normal human genome). The intensity(ies) of the signals from each labeled subject nucleic acid and/or the differences in the ratios between different signals from the labeled subject nucleic acid sequences are compared to determine the relative copy numbers of the nucleic acid sequences in the one or more subject genomes as a function of position along the reference chromosome spread.

Abstract: Disclosed are new methods comprising the use of in situ hybridization to detect abnormal nucleic acid sequence copy numbers in one or more genomes wherein repetitive sequences that bind to multiple loci in a reference chromosome spread are either substantially removed and/or their hybridization signals suppressed. The invention termed Comparative Genomic Hybridization (CGH) provides for methods of determining the relative number of copies of nucleic acid sequences in one or more subject genomes or portions thereof (for example, a tumor cell) as a function of the location of those sequences in a reference genome (for example, a normal human genome). The intensity(ies) of the signals from each labeled subject nucleic acid and/or the differences in the ratios between different signals from the labeled subject nucleic acid sequences are compared to determine the relative copy numbers of the nucleic acid sequences in the one or more subject genomes as a function of position along the reference chromosome spread.

Abstract: An engine-driven generator incorporating an engine and a generator into a single unit, with the output shaft of the engine coaxially connected to the rotating shaft of the generator, via a frame structure formed by integrally combining two support members provided in parallel with the axial line of the output and rotating shafts with two handle members orthogonally intersecting the aforementioned axial line via upright members wherein base members are fixedly fitted between the support members below the engine and the generator in such a manner as to orthogonally intersecting the aforementioned support members; a generator mounting member, having a mounting hole in the axial direction, provided between a bulged portion integrally protruded on the lower part a rear bracket of the generator and a base member below the generator, and two engine mounting members provided between the engine and a base member below the engine are disposed at the apexes of a triangle, so that the engine and the generator are mounted

Abstract: Disclosed are new methods comprising the use, of in situ hybridization to detect abnormal nucleic acid sequence copy numbers in one or more genomes wherein repetitive sequences that bind to multiple loci in a reference chromosome spread are either substantially removed and/or their hybridization signals suppressed. The invention termed Comparative Genomic Hybridization (CGH) provides for methods of determining the relative number of copies of nucleic acid sequences in one or more subject genomes or portions thereof (for example, a tumor cell) as a function of the location of those sequences in a reference genome (for example, a normal human genome). The intensity(ies) of the signals from each labeled subject nucleic acid and/or the differences in the ratios between different signals from the labeled subject nucleic acid sequences are compared to determine the relative copy numbers of the nucleic acid sequences in the one or more subject genomes as a function of position along the reference chromosome spread.

Abstract: A liquid crystal image display unit created on a substrate non-transparent to the light in the visible radiation area, characterized in that a portion beneath a liquid crystal pixel part on said substrate is removed, so that the light is made transmissive through said liquid crystal pixel part.

Abstract: A semiconductor device is constructed to have an insulating layer containing an impurity provided upon a semiconductor substrate. This insulating layer contains a plurality of windows of different sizes. A first layer is provided in the windows. This first layer does not extend over a periphery of the windows to the surface of the insulating layer. Further, this semiconductor device is constructed such that the surface of the insulating layer and the first layer opposite the semiconductor substrate are flat. In addition, the semiconductor substrate in contact with the first layer also contains the impurity. The semiconductor device, having less surface unevenness that a conventional device, provides both improved and greater stability of device properties.

Abstract: A semiconductor device has an ITO film which is in contact with a semiconductor or a metal, the ITO film having an insulating film with SiN as the main constituent provided on or under at least a portion of the ITO film.

Abstract: A semiconductor device having i) a common opening 110 reaching a conductive region 105 through at least one conductive layer 107 and ii) another conductive layer 109 deposited in the opening 101, the conductive layer 107 and the conductive region 105 being electrically connected in the common opening 110. Also disclosed is a process comprising previously forming a plurality of conductive regions 105 and 107, thereafter forming an opening 110 that opens at the conductive regions, and depositing another conductive region 109 in the opening 110 to electrically connect the respective conductive regions in the opening. This can achieve a wiring connection structure that enables prevention of an increase in the number of masks used to form openings for wiring connection, an increase in the number of steps and an increase in the area held by openings, to thereby enhance the degree of integration of semiconductor devices.

Abstract: A method of fabricating semiconductor devices comprises the following process of: forming an electrode leading out window having its vertical side wall at a given position in the functional element formed on a semiconductor substrate; forming an insulating film on the surface of the side wall; and depositing an electrode metal in the leading out window.

Abstract: A semiconductor apparatus exhibiting excellent contact characteristics, high operational speed and low electric power consumption is realized by forming a layer made of Ti or a Ti compound between an oxide containing indium such as a thin ITO film and a Si region.

Abstract: A process for preparing a semiconductor device, in which a polycrystalline silicon film is formed on a monocrystalline semiconductor substrate and arsenic or phosphorus is injected as an impurity into the polycrystalline silicon film by an ion-injection method to make the polycrystalline silicon film an amorphous layer. The amorphous layer is heat-treated at a temperature of 600.degree. C. to 650.degree. C. to recrystallize the amorphous layer, thus forming a recrystallized layer having a grain size greater than that of the polycrystalline silicon film by solid phase growth. The recrystallized layer is heat-treated at a temperature of 800.degree. C. to 900.degree. C. to diffuse the impurity into the monocrystalline semiconductor substrate.

Abstract: A liquid crystal image display unit created on a substrate non-transparent to the light in the visible radiation area, characterized in that a portion beneath a liquid crystal pixel part on said substrate is removed, so that the light is made transmissive through said liquid crystal pixel part.

Abstract: A process for preparing a semiconductor device forms an insulating thin film capable of tunnelling phenomenon of carriers on a semiconductor substrate and forms a polycrystalline semiconductor layer on the thin film. An impurity is injected to the surface of the polycrystalline semiconductor layer, the diffusion coefficient to the thin film being smaller than that to the polycrystalline semiconductor layer. The process effects a first heat treatment at a temperature of 800.degree. C. or less to diffuse the impurity injected into the polycrystalline semiconductor layer in the polycrystalline semiconductor layer, thereby forming a uniform or substantially uniform impurity containing region at least at the thin film side of the polycrystalline semiconductor layer, and, effects a second heat treatment the temperature of which is 950.degree. C.