Abstract: After forming a resist film including titanium oxide on a substrate, pattern exposure is performed by selectively irradiating the resist film with light of a wavelength of 400 nm or less or an electron beam. After the pattern exposure, the resist film is developed, so as to form a resist pattern made of the resist film.

Abstract: A chemically amplified resist composition using an alternating copolymer of ?-trifluoroacrylic acid with norbornene as a base polymer lends itself to ArF laser lithographic micropatterning and is improved in transparency, plasma etching resistance, and line edge roughness.

Abstract: A resist film with a thickness of 250 nm or less is formed on a semiconductor substrate from a positive chemically amplified resist material including a base polymer whose solubility in an alkaline developer is changed by a function of an acid and an acid generator that has at least one electron attractive group introduced into a meta-position of an aromatic ring included in a counter action and generates an acid through irradiation with electron beams. The resist film is subjected to pattern exposure by irradiating with electron beams or extreme UV of a wavelength of a 1 nm through 30 nm band. The resist film is developed after the pattern exposure, thereby forming a resist pattern.

Abstract: A resist composition comprising a polymer containing vinyl sulfonate units having fluorinated hydrophilic groups as a base resin has excellent transparency, substrate adhesion and developer penetrability as well as plasma etching resistance, and is suited for lithographic microprocessing.

Abstract: A water-soluble material used for forming a water-soluble film on a chemically amplified resist film includes a water-soluble polymer, an acid generator and a compound constructing an inclusion compound for incorporating the acid generator. Also, in a pattern formation method, a chemically amplified resist film is formed on a substrate, and a water-soluble film made of a water-soluble material including a water-soluble polymer, an acid generator and a compound constructing an inclusion compound for incorporating the acid generator is formed on the resist film. Thereafter, pattern exposure is carried out by selectively irradiating the resist film with exposing light through the water-soluble film, the resultant resist film is developed and the water-soluble film is removed. Thus, a resist pattern made of the resist film is formed.

Abstract: A method for forming a semiconductor device includes the steps of forming, on a substrate, a flowable film made of an insulating material with flowability; planarizing a top face of the flowable film by pressing the flowable film with a pressing member; forming a solidified film by annealing the flowable film at a first temperature with the pressing member pressed against the flowable film; and forming a burned film with a flat top face by burning the solidified film through annealing of the solidified film at a second temperature higher than the first temperature.

Abstract: The pattern formation material of this invention is a chemically amplified resist material including a polymer whose solubility in a developer is changed in the presence of an acid; an acid generator for generating an acid through irradiation with exposing light; and a base generator for generating a base through irradiation with the exposing light. The base generator is more photosensitive to longer band light of a wavelength longer than extreme UV than to extreme UV when irradiated, as the exposing light, with the extreme UV and the longer band light at equivalent exposure energy.

Abstract: A resist film made of a chemically amplified resist is formed on a substrate. Subsequently, a barrier film for preventing a component of the resist film from eluting into an immersion liquid or preventing the immersion liquid from permeating into the resist film is formed on the resist film. Thereafter, with an immersion liquid provided on the barrier film, pattern exposure is carried out by selectively irradiating the resist film with exposing light through the barrier film. Then, after removing the barrier film, the resist film having been subjected to the pattern exposure is developed, so as to form a resist pattern made of the resist film.

Abstract: The base polymer of a resist material contains a polymer compound including a first unit represented by a general formula of the following Chemical Formula 4 and a second unit represented by a general formula of the following Chemical Formula 5: wherein R1, R2 and R3 are the same or different and are a hydrogen atom, a fluorine atom, or a straight-chain alkyl group, a branched or cyclic alkyl group or a fluoridated alkyl group with a carbon number not less than 1 and not more than 20; R4 is a straight-chain alkylene group or a branched or cyclic alkylene group with a carbon number not less than 0 and not more than 20; R5 and R6 are the same or different and are a hydrogen atom, a straight-chain alkyl group, a branched or cyclic alkyl group or a fluoridated alkyl group with a carbon number not less than 1 and not more than 20, or a protecting group released by an acid; R7 is a methylene group, an oxygen atom, a sulfur atom or -SO2-; R8, R9, R10 and R11 are the same or different and are a hydrogen atom, a

Abstract: A copolymer of an acrylate monomer containing fluorine at ?-position with a fluorinated hydroxystyrene derivative is highly transparent to VUV radiation and resistant to plasma etching. A resist composition using the polymer as a base resin is sensitive to high-energy radiation below 200 nm, has excellent sensitivity, resolution, transparency, substrate adhesion and plasma etching resistance, and is suited for lithographic microprocessing.

Abstract: The object of the invention is to provide a porous film having the dielectric constant of 2.2 or less and having practicable mechanical strength. This invention provides a porous film-forming composition comprising (A) and (B): (A) 100 parts by weight of a hydrolyzable silicon compound and/or a product resulting from hydrolysis condensation of silicon compound expressed by following formula (1): R1aSiZ14-a??(1) ?wherein Z1 denotes a hydrolyzable group; R1 denotes a substituted or non-substituted monovalent hydrocarbon group; and a denotes an integer of 0 to 3; and (B) 0.

Abstract: A chemically amplified resist composition comprising an alternating copolymer of an acrylate monomer having a fluoroalkyl group at alpha-position with a norbornene derivative, when processed through ArF excimer laser exposure by lithography, is improved in resolution and dry etching resistance and minimized in line edge roughness.

Abstract: A pattern formation method includes the steps of forming a flowable film made of a material with flowability; forming at least one of a concave portion and a convex portion provided on a pressing face of a pressing member onto the flowable film by pressing the pressing member against the flowable film; forming a solidified film by solidifying the flowable film, onto which the at least one of a concave portion and a convex portion has been transferred, through annealing at a first temperature with the pressing member pressed against the flowable film; and forming a pattern made of the solidified film burnt by annealing at a second temperature higher than the first temperature.

Abstract: A method for forming a semiconductor device includes the steps of forming a flowable film made of an insulating material with flowability; forming a first concave portion in the flowable film through transfer of a convex portion of a pressing face of a pressing member by pressing the pressing member against the flowable film; forming a solidified film having the first concave portion by solidifying the flowable film through annealing at a first temperature with the pressing member pressed against the flowable film; forming a burnt film having the first concave portion by burning the solidified film through annealing at a second temperature higher than the first temperature; forming a second concave portion connected at least to the first concave portion in the burnt film by forming, on the burnt film, a mask having an opening for forming the second concave portion and etching the burnt film by using the mask; and forming a plug and a metal interconnect by filing the first concave portion and the second concav

Abstract: The invention provides a coating solution for forming a porous film having excellent mechanical strength and dielectric properties and for easily forming a film with a freely controlled film thickness in an ordinarily employed method in semiconductor process. More specifically, provided are a method for preparing a porous-film-forming composition comprising steps of preparing polysiloxane, silica or zeolite particles (Component A), imparting crosslinkability to Component A, and temporarily terminating the crosslinkability; and a porous-film-forming composition obtainable in this method.

Abstract: A resist film made of a chemically amplified resist including a water-soluble polymer is formed on a substrate, whereas the water-soluble polymer has lower gas permeability than the chemically amplified resist. Subsequently, pattern exposure is carried out by selectively irradiating the resist film with exposing light through a mask, and thereafter, the resultant resist film is developed. Thus, a fine resist pattern made of the resist film is formed in a good shape.

Abstract: In a pattern formation method of this invention, a resist film is formed on a substrate and pattern exposure is performed by selectively irradiating the resist film with exposing light. Subsequently, the resist film is developed after the pattern exposure, and the developed resist film is rinsed with an aqueous solution including cyclodextrin. Thus, a fine resist pattern made of the resist film is formed without causing pattern collapse.

Abstract: A resist composition comprising a base polymer having a fluorinated sulfonate or fluorinated sulfone introduced therein is sensitive to high-energy radiation, has excellent transparency, contrast and adherence, and is suited for lithographic microprocessing.

Abstract: A resist film is formed from a chemically amplified resist material including a phenol polymer, an acrylic polymer and an onium salt serving as an acid generator. The resist film is selectively irradiated for pattern exposure with extreme UV of a wavelength of a 1 nm through 30 nm band or an electron beam, and is developed after the pattern exposure, so as to form a resist pattern.

Abstract: As shown in FIG. 2, a multi-layer structured exposure mask 1 of this embodiment is provided with a frame 20 made of glass, a silicon plate 15 provided on an under surface of the frame 20, a heat absorption mask 16 provided on an under surface of the silicon plate 15, a silicon plate 11 provided on an under surface of the heat absorption mask 16 and a stencil mask 14 provided on an under surface of the silicon plate 11. The stencil mask 14 is made up of a silicon substrate and is provided with a slit-shaped patterning opening 14a to form a resist pattern. The heat absorption mask 16 is made up of a silicon substrate coated with an SiN film and is provided with slit-shaped openings 16a shaped in almost the same way as the patterning openings 14a of the stencil mask 14. The opening 16a is shaped in such a size that will not block electron beams necessary to form a resist pattern as shown in FIG. 3(a).