Patents by Inventor Masaru Sasago

Masaru Sasago has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Composition for forming porous film, porous film and method for forming the same, interlevel insulator film, and semiconductor device
    Publication number: 20040180222
    Abstract: Provided is a coating liquid for forming a porous film having desirably controlled thickness and having excellent dielectric and mechanical properties, using the conventional semiconductor process.
    Type: Application
    Filed: March 9, 2004
    Publication date: September 16, 2004
    Applicants: Shin-Etsu Chemical Co., LTD., Matsushita Electric Industrial Co., Ltd.
    Inventors: Tsutomu Ogihara, Fujio Yagihashi, Hideo Nakagawa, Masaru Sasago
  • Resist compositions and patterning process
    Patent number: 6790586
    Abstract: A resist composition comprising (A) a polymer comprising recurring units having an alicyclic hydrocarbon backbone to which a carboxylate moiety capable of generating carboxylic acid when decomposed under acidic conditions is attached through a C1-C20 alkylene spacer, (B) a photoacid generator, and (C) an organic solvent is sensitive to high-energy radiation, and has excellent sensitivity and resolution at a wavelength below 180 nm, and good plasma etching resistance. Because these features of the inventive resist composition enable its use particularly as a resist at the exposure wavelength of a F2 excimer laser, a finely defined pattern can easily be formed, making the resist ideal as a micropatterning material in VLSI fabrication.
    Type: Grant
    Filed: September 7, 2001
    Date of Patent: September 14, 2004
    Assignees: Shin-Etsu Chemical Co., Ltd., Matsushita Electric Industrial Co., Ltd., Central Glass Co., Ltd.
    Inventors: Jun Hatakeyama, Yuji Harada, Jun Watanabe, Yoshio Kawai, Masaru Sasago, Masayuki Endo, Shinji Kishimura, Michitaka Ootani, Satoru Miyazawa, Kentaro Tsutsumi, Kazuhiko Maeda
  • Pattern formation method
    Publication number: 20040161710
    Abstract: A pattern formation method of this invention includes the steps of forming a resist film of a chemically amplified resist material and forming a resist pattern by developing the resist film with an alkaline developer after irradiating, through a mask having a desired pattern, the resist film with exposing light having a light component entering the resist film at the Brewster's angle. A thickness reduction ratio of the resist pattern to the resist film is 5% or less.
    Type: Application
    Filed: December 16, 2003
    Publication date: August 19, 2004
    Applicant: MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.
    Inventors: Masayuki Endo, Masaru Sasago
  • Sulfonates, polymers, resist compositions and patterning process
    Publication number: 20040157156
    Abstract: A sulfonate compound having formula (1) is novel wherein R1 to R3 are H, F or C1-20 alkyl or fluoroalkyl, at least one of R1 to R3 contains F. A polymer comprising units derived from the sulfonate compound is used as a base resin to formulate a resist composition which is sensitive to high-energy radiation, maintains high transparency at a wavelength of up to 200 nm, and has improved alkali dissolution contrast and plasma etching resistance.
    Type: Application
    Filed: February 9, 2004
    Publication date: August 12, 2004
    Inventors: Yuji Harada, Jun Hatakeyama, Yoshio Kawai, Masaru Sasago, Masayuki Endo, Shinji Kishimura, Kazuhiko Maeda, Haruhiko Komoriya, Satoru Miyazawa
  • Polymers, resist compositions and patterning process
    Publication number: 20040157155
    Abstract: A polymer comprising recurring units of (1a) or (1b) wherein R1 is an acid labile group, adhesive group or fluoroalkyl, R2 is H, F, alkyl or fluoroalkyl, R3 and R4 each are a single bond, alkylene or fluoroalkylene, R5 is H or an acid labile group, “a” is 1 or 2, 0<U11<1 and 0<U12<1 and having a Mw of 1,000-500,000 is used as a base resin to formulate a resist composition which is sensitive to high-energy radiation, maintains high transparency at a wavelength of up to 200 nm, and has improved alkali dissolution contrast and plasma etching resistance.
    Type: Application
    Filed: February 9, 2004
    Publication date: August 12, 2004
    Inventors: Yuji Harada, Jun Hatakeyama, Yoshio Kawai, Masaru Sasago, Masayuki Endo, Shinji Kishimura, Kazuhiko Maeda, Haruhiko Komoriya, Satoru Miyazawa
  • Resist compositions and patterning process
    Publication number: 20040144752
    Abstract: A resist composition comprising as the base resin a blend of a fluorinated polymer which is sensitive to high-energy radiation and highly transparent at a wavelength of up to 200 nm and a sulfonate-containing polymer exhibiting a high contrast upon alkali dissolution is improved in transparency and alkali dissolution contrast as well as plasma etching resistance.
    Type: Application
    Filed: October 23, 2003
    Publication date: July 29, 2004
    Inventors: Yuji Harada, Jun Hatakeyama, Yoshio Kawai, Masaru Sasago, Masayuki Endo, Shinji Kishimura, Kazuhiko Maeda, Haruhiko Komoriya, Satoru Miyazawa
  • Pattern formation method
    Patent number: 6764811
    Abstract: A resist film is formed from a chemically amplified resist material including a base polymer having a lactone group and having neither a hydroxyl group nor a carboxylic group as an adhesion group bonded to a polymer side chain; and an acid generator for generating an acid through irradiation with light. The resist film is irradiated with extreme UV of a wavelength of a 1 nm through 30 nm band for pattern exposure. The resist film is developed after the pattern exposure, so as to form a resist pattern from an unexposed portion of the resist film.
    Type: Grant
    Filed: January 2, 2002
    Date of Patent: July 20, 2004
    Assignee: Matsushita Electric Industry Co., Ltd.
    Inventors: Masayuki Endo, Masaru Sasago
  • Pattern formation material and pattern formation method
    Patent number: 6753132
    Abstract: A resist film is formed by applying, on a substrate, a pattern formation material containing a polymer including a first unit represented by Chemical Formula 1 and a second unit represented by Chemical Formula 2, and an acid generator: Chemical Formula 1: Chemical Formula 2:  wherein R1 and R2 are the same or different and selected from the group consisting of an alkyl group, a chlorine atom and an alkyl group including a fluorine atom; R3 is a protecting group released by an acid; and m is an integer of 0 through 5. Subsequently, the resist film is irradiated with exposing light of a wavelength shorter than a 180 nm band for pattern exposure, and a resist pattern is formed by developing the resist film after the pattern exposure.
    Type: Grant
    Filed: January 3, 2002
    Date of Patent: June 22, 2004
    Assignee: Matsushita Electric Industrial Co., Ltd.
    Inventors: Shinji Kishimura, Masayuki Endo, Masaru Sasago, Masamitsu Shirai, Masahiro Tsunooka
  • Composition for forming porous film, porous film and method for forming the same, interlevel insulator film, and semiconductor device
    Publication number: 20040105986
    Abstract: The present invention provides a composition for film formation which can form a porous film that excels in dielectric properties, adhesion, film consistency and mechanical strength, and that is easily thinned; a porous film and a method for forming the same, and a high-performing and highly reliable semiconductor device which contains the porous film inside. More specifically, the composition for forming a porous film comprises a solution containing an amorphous polymer which is obtained by hydrolyzing and condensing at least one silane compound expressed by the general formula (R1)nSi(OR2)4-n, and a zeolite sol which is formed by using a quaternary ammonium hydroxide. The method for forming a porous film comprises a coating step for coating the composition for forming a porous film; a subsequent drying step; and a porousness forming step.
    Type: Application
    Filed: November 7, 2003
    Publication date: June 3, 2004
    Inventors: Tsutomu Ogihara, Fujio Yagihashi, Hideo Nakagawa, Masaru Sasago
  • Pattern formation material and method
    Patent number: 6737213
    Abstract: In the pattern formation method of this invention, a resist film is formed by applying, on a substrate, a pattern formation material containing a polymer including a first unit represented by Chemical Formula 1 and a second unit represented by Chemical Formula 2, and an acid generator, wherein R1 and R2 are the same or different and selected from the group consisting of an alkyl group, a chlorine atom and an alkyl group including a chlorine atom; and R3 is a protecting group released by an acid. Then, the resist film is irradiated with exposing light of a wavelength of a 1 nm through 30 nm band or a 110 nm through 180 nm band for pattern exposure, and a resist pattern is formed by developing the resist film after the pattern exposure.
    Type: Grant
    Filed: March 6, 2001
    Date of Patent: May 18, 2004
    Assignee: Matsushita Electric Industrial Co., Ltd.
    Inventors: Shinji Kishimura, Masaru Sasago, Masamitsu Shirai, Masahir Tsunooka
  • Zeolite sol and method for preparing the same, composition for forming porous film, porous film and method for forming the same, interlevel insulator film, and semiconductor device
    Publication number: 20040091419
    Abstract: The present invention provides a zeolite sol which can be formed into a porous film that can be thinned to an intended thickness by a method used in the ordinary semiconductor process, that excels in dielectric properties, adhesion, film consistency and mechanical strength, and that can be easily thinned; a composition for film formation; a porous film and a method for forming the same; and a high-performing and highly reliable semiconductor device which contains this porous film inside.
    Type: Application
    Filed: November 7, 2003
    Publication date: May 13, 2004
    Inventors: Tsutomu Ogihara, Fujio Yagihashi, Hideo Nakagawa, Masaru Sasago
  • Soft X-ray reduction projection exposure system, soft X-ray reduction projection exposure method and pattern formation method
    Patent number: 6721390
    Abstract: A soft X-ray reduction projection exposure system includes a light source for generating a soft X-ray beam of a wavelength of a 4 through 20 nm band; a reflecting mask on which a desired pattern is formed; an illumination optical system for irradiating the reflecting mask with the soft X-ray beam; a reduction projection optical system for imaging the pattern of the reflecting mask on a wafer; and a controlling section for controlling a partial pressure of a gas of a carbon compound to be 1.33×10−8 Pa or less in at least one of a first region where the illumination optical system is disposed, a second region where the reflecting mask is disposed and a third region where the reduction projection optical system is disposed.
    Type: Grant
    Filed: June 10, 2002
    Date of Patent: April 13, 2004
    Assignee: Matsushita Electric Industrial Co., Ltd.
    Inventors: Takahiro Matsuo, Masaru Sasago
  • Pattern formation method
    Patent number: 6716730
    Abstract: After pre-baking a resist film, a solvent included in the resist film is vaporized. After vaporizing the solvent included in the resist film, pattern exposure is performed by selectively irradiating the resist film with exposing light in vacuum. The resist film is developed after the pattern exposure, so as to form a resist pattern.
    Type: Grant
    Filed: January 10, 2003
    Date of Patent: April 6, 2004
    Assignee: Matsushita Electric Industrial Co., Ltd.
    Inventors: Masayuki Endo, Masaru Sasago
  • Pattern formation material, water-soluble material and pattern formation method
    Publication number: 20040058271
    Abstract: The pattern formation material of this invention is composed of a chemically amplified resist material. The chemically amplified resist material includes a polymer whose solubility in a developer is changed owing to a function of an acid; an acid generator that generates an acid through irradiation with an energy beam; and a compound that absorbs outgassing induced from the polymer or the acid generator.
    Type: Application
    Filed: August 15, 2003
    Publication date: March 25, 2004
    Applicant: MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.
    Inventors: Masayuki Endo, Masaru Sasago
  • Mirror for exposure system, reflection mask for exposure system, exposure system and pattern formation method
    Publication number: 20040058253
    Abstract: A mirror for use in an exposure system of this invention includes a reflection layer for reflecting EUV formed on a mirror substrate and an absorption layer formed on the reflection layer and made from a compound for absorbing infrared light.
    Type: Application
    Filed: August 15, 2003
    Publication date: March 25, 2004
    Applicant: MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD
    Inventors: Masayuki Endo, Masaru Sasago
  • Polymers, resist compositions and patterning process
    Patent number: 6710148
    Abstract: A copolymer of an acrylate monomer containing fluorine at &agr;-position with a norbornene derivative is highly transparent to VUV radiation and resistant to dry etching. A resist composition using the resin as a base polymer is sensitive to high-energy radiation below 200 nm, has excellent sensitivity, and is suited for lithographic microprocessing.
    Type: Grant
    Filed: February 8, 2002
    Date of Patent: March 23, 2004
    Assignees: Shin Etsu Chemical Co., Ltd., Matsushita Electric Industrial Co., Ltd., Central Glass Co., Ltd.
    Inventors: Yuji Harada, Jun Hatakeyama, Jun Watanabe, Yoshio Kawai, Masaru Sasago, Masayuki Endo, Shinji Kishimura, Michitaka Ootani, Satoru Miyazawa, Kentaro Tsutsumi, Kazuhiko Maeda
  • Pattern forming material and method of pattern formation
    Publication number: 20040043321
    Abstract: A pattern formation material of this invention contains a base polymer including a first unit represented by Chemical Formula 1 and a second unit represented by Chemical Formula 2 and, and an acid generator: 1
    Type: Application
    Filed: April 29, 2003
    Publication date: March 4, 2004
    Inventors: Shinji Kishimura, Masayuki Endo, Masaru Sasago, Mitsuru Ueda, Tsuyohiko Fujigaya
  • Pattern-forming material and method of forming pattern
    Publication number: 20040029035
    Abstract: A pattern formation material of this invention contains a base polymer including a unit represented by Chemical Formula 1 and, and an acid generator: 1
    Type: Application
    Filed: April 28, 2003
    Publication date: February 12, 2004
    Inventors: Shinji Kishimura, Masayuki Endo, Masaru Sasago, Mitsuru Ueda, Tsuyohiko Fujigaya
  • Method for producing semiconductor device
    Publication number: 20040029363
    Abstract: After a fluid film is formed by supplying a material with fluidity to the surface of a substrate formed with a stepped layer, the fluid film is pressed against the substrate by a pressing member having a planar pressing surface so that the surface of the fluid film is planarized. The fluid film is heated in this state and thereby solidified to form a solidified film having a planar surface.
    Type: Application
    Filed: April 22, 2003
    Publication date: February 12, 2004
    Inventors: Hideo Nakagawa, Masaru Sasago, Masayuki Endo, Yoshihiko Hirai
  • Polymers, resist compositions and patterning process
    Publication number: 20040030079
    Abstract: A resist composition comprising a polymer containing vinyl sulfonate units having fluorinated hydrophilic groups as a base resin has excellent transparency, substrate adhesion and developer penetrability as well as plasma etching resistance, and is suited for lithographic microprocessing.
    Type: Application
    Filed: August 8, 2003
    Publication date: February 12, 2004
    Inventors: Yuji Harada, Jun Hatakeyama, Yoshio Kawai, Masaru Sasago, Masayuki Endo, Shinji Kishimura, Kazuhiko Maeda, Michitaka Ootani, Haruhiko Komoriya