Abstract: A positive resist composition comprising (A) a resin component and (B) an acid generator component, wherein the component (A) is a copolymer which comprises constituent units (a1) derived from a mono(?-lower alkyl)acrylate having an acid-dissociable dissolution-inhibiting group, constituent units (b1) derived from a mono ?-lower alkyl)acrylate having a lactone ring, and constituent units (c1) derived from a poly(?-lower alkyl)acrylate; and a positive resist composition comprising (A) a resin component and (B) an acid generator component, wherein the component (A) is a star polymer having a core containing acid-dissociable dissolution-inhibiting groups and arms bonded to the core.

Abstract: This resist composition according to the present invention includes a base component (A) which exhibits changed solubility in an alkali developing solution under action of acid, and an acid generator component (B) which generates an acid upon exposure, wherein the acid generator component (B) includes an acid generator (B1) represented by a general formula (b1-6-1) shown below and an acid generator (B2) represented by a general formula (b1-6-2) shown below: (wherein, R40 represents a hydrogen atom or an alkyl group; R41 represents a halogen atom, a halogenated alkyl group, an alkyl group, an acetyl group, a carboxyl group or a hydroxyalkyl group; R42 and R43 each independently represents a halogen atom, a halogenated alkyl group, an alkyl group, an acetyl group, an alkoxy group, a carboxyl group or a hydroxyalkyl group; n0 to n3 each independently represents an integer of 0 to 3, with the proviso that n0+n1 is 5 or less; R13 each independently represents a linear or branched alkyl group of 1 to 10 carbon

Abstract: A positive resist composition includes a resin component (A) that exhibits increased alkali solubility under the action of acid, and an acid generator component (B) that generates acid upon exposure, wherein the resin component (A) is a mixture of a copolymer (A1) that includes a structural unit (a1) derived from an acrylate ester that contains an acid-dissociable, dissolution-inhibiting group, a structural unit (a2) derived from a methacrylate ester that contains a lactone-containing monocyclic group, and a structural unit (a3) derived from an acrylate ester that contains a polar group-containing polycyclic group, and a copolymer (A2) that has a different structure from the copolymer (A1) and has a lower hydrophilicity than the copolymer (A1).

Abstract: A resist composition including a base component (A) and an acid-generator component (B), the acid-generator component (B) including an acid generator (B1) including a compound represented by general formula (b1-8) shown below (wherein R401 represents an acid dissociable, dissolution inhibiting group; R41 to R43 each independently represents a halogen atom, a halogenated alkyl group, an alkyl group, an acetyl group, an alkoxy group, a carboxy group or a hydroxyalkyl group; Q represents a divalent linking group or a single bond; and X? represents an anion) or an acid generator (B1?) including a compound represented by general formula (b1-9) shown below (wherein R402 and R403 each independently represents a hydrogen atom, an alkyl group or a halogenated alkyl group; R404 represents an alkyl group or a halogenated alkyl group, wherein R403 and R404 may be bonded to each other to form a ring structure; and X? represents an anion).

Abstract: A method for producing a resist composition including a resin component (A) that exhibits changed alkali solubility under the action of acid and an acid generator component (B) that generates acid upon exposure, the method including the steps of: obtaining the component (A) by mixing a plurality of copolymers, which are composed of the same structural units but have mutually different measured values for the contact angle.

Abstract: The invention provides a polymer compound capable of forming a positive resist composition that can form a high-resolution pattern with a reduced level of LER, an acid generator formed from such a polymer compound, a positive resist composition that includes such a polymer compound, and a method for forming a resist pattern that uses such a positive resist composition.

Abstract: This resist composition according to the present invention includes a base component (A) which exhibits changed solubility in an alkali developing solution under action of acid, and an acid generator component (B) which generates an acid upon exposure, wherein the acid generator component (B) includes an acid generator (B1) represented by a general formula (b1-6-1) shown below and an acid generator (B2) represented by a general formula (b1-6-2) shown below: (wherein, R40 represents a hydrogen atom or an alkyl group; R41 represents a halogen atom, a halogenated alkyl group, an alkyl group, an acetyl group, a carboxyl group or a hydroxyalkyl group; R42 and R43 each independently represents a halogen atom, a halogenated alkyl group, an alkyl group, an acetyl group, an alkoxy group, a carboxyl group or a hydroxyalkyl group; n0 to n3 each independently represents an integer of 0 to 3, with the proviso that n0+n1 is 5 or less; R13 each independently represents a linear or branched alkyl group of 1 to 10 carbon

Abstract: A resist composition including a base component (A) and an acid-generator component (B), the acid-generator component (B) including an acid generator (B1) including a compound represented by general formula (b1-8) shown below (wherein R401 represents an acid dissociable, dissolution inhibiting group; R41 to R43 each independently represents a halogen atom, a halogenated alkyl group, an alkyl group, an acetyl group, an alkoxy group, a carboxy group or a hydroxyalkyl group; Q represents a divalent linking group or a single bond; and X? represents an anion) or an acid generator (B1?) including a compound represented by general formula (b1-9) shown below (wherein R403 and R403 each independently represents a hydrogen atom, an alkyl group or a halogenated alkyl group; R404 represents an alkyl group or a halogenated alkyl group, wherein R403 and R404 may be bonded to each other to form a ring structure; and X? represents an anion).

Abstract: A positive resist composition that includes a resin component (A) that exhibits increased alkali solubility under action of acid, and an acid generator component (B) that generates acid on exposure, wherein the component (A) is a copolymer (A1) that includes a structural unit (a1) derived from an acrylate that contains an acid dissociable, dissolution inhibiting group, a structural unit (a2) derived from an ?-lower alkyl acrylate that contains a lactone ring, and a structural unit (a3) derived from an (?-lower alkyl)acrylate that contains a polar group-containing polycyclic group.

Abstract: A polymer, a positive resist composition, and a method for forming a resist pattern that are able to form a resist pattern with a high level of resolution and excellent etching resistance. The present invention uses a polymer that contains a structural unit (a1) represented by a general formula (a-1) shown below and a structural unit (a2) represented by a general formula (a-2) shown below, another polymer that contains the structural unit (a1) and a structural unit (a3) represented by a general formula (a-3) shown below, and another polymer that contains the structural unit (a1), the structural unit (a2), and the structural unit (a3).

Abstract: A process is provided for effectively removing by-products such as oligomers contained within a crude resin for an electronic material, thus producing a resin for an electronic material. In this process, a crude resin for an electronic material containing (a1) structural units derived from a (meth)acrylate ester with a hydrophilic site is washed using (b1) an organic solvent which is capable of dissolving said crude resin for an electronic material and which separates into two layers when combined with water, and (b2) water.

Abstract: A resist composition is provided that yields fine resolution, and improved levels of line edge roughness and depth of focus. This composition includes a resin component (A) that undergoes a change in alkali solubility under the action of acid, and an acid generator component (B) that generates acid on exposure, wherein the component (A) is a resin with a weight average molecular weight of no more than 8,000 containing structural units (a) derived from a (meth)acrylate ester, and the component (B) includes at least one sulfonium compound represented by a general formula (b-1) or a general formula (b-2) shown below.

Abstract: The invention provides a polymer compound capable of forming a positive resist composition that can form a high-resolution pattern with a reduced level of LER, an acid generator formed from such a polymer compound, a positive resist composition that includes such a polymer compound, and a method for forming a resist pattern that uses such a positive resist composition.

Abstract: A positive resist composition that includes a resin component (A) and an acid-generator component (B), wherein the component (A) is a copolymer that includes a structural unit (a1) derived from a mono(?-lower alkyl)acrylate that contains an acid-dissociable, dissolution-inhibiting group, a structural unit (b1) derived from a mono(?-lower alkyl)acrylate that contains a lactone ring, and a structural unit (c1) derived from a poly(?-lower alkyl)acrylate. A positive resist composition that includes a resin component (A) and an acid generator component (B), wherein the component (A) is a star polymer that includes a core that contains acid-dissociable, dissolution-inhibiting groups, and arms that are bonded to the core.

Abstract: A positive resist composition which includes a resin component (A) that exhibits increased alkali solubility under the action of acid, an acid generator component (B) that generates acid on exposure, and an organic solvent (C). The component (A) includes (i) a structural unit (a1), which contains an acid dissociable, dissolution inhibiting group and is derived from a (meth)acrylate ester, (ii) a structural unit (a2), which contains an acid dissociable, dissolution inhibiting group that is less readily dissociated than the acid dissociable, dissolution inhibiting group contained in the structural unit (a1), and is derived from a (meth)acrylate ester, and (iii) a structural unit (a3), which contains a lactone functional group and is derived from a (meth)acrylate ester.

Abstract: A positive resist composition that includes a base resin component (A) and an acid generator component (B), wherein the component (A) is a copolymer that includes structural units (a-1), which are derived from an (?-lower alkyl) acrylate ester that contains an acid dissociable, dissolution inhibiting group, and also contains an aliphatic cyclic group, structural units (a-2), which are derived from an (?-lower alkyl) acrylate ester that contains a ?-butyrolactone residue, and structural units (a-3), which are derived from an (?-lower alkyl) acrylate ester that contains a hydroxyl group-containing aliphatic polycyclic hydrocarbon group, and the glass transition temperature (Tg) of the copolymer is within a range from 100 to 170° C.

Abstract: A resin for photoresist compositions is disclosed with excellent resolution and line edge roughness characteristics. A photoresist composition and a method for forming a resist pattern using such a resin are also disclosed. The resin has a hydroxyl group bonded to a carbon atom at a polymer terminal, and the carbon atom in the ?-position to the hydroxyl group has at least one electron attractive group.

Abstract: A copolymer for semiconductor lithography, comprising at least a recurring unit (A) having a carboxylic acid ester structure whose solubility in alkali increases by the action of an acid and a carboxyl group-containing recurring unit (B), which copolymer is obtained via a step (P) of (co)polymerizing at least a monomer giving a recurring unit (A) and a step (Q) of forming a recurring unit (B) in the co-presence of a recurring unit (A)-containing (co)polymer and/or a monomer giving a recurring unit (A), and an acid. The copolymer is used in production of semiconductor as a resist polymer which is small in roughness, little in development defect and superior in lithography properties such as DOF and the like.

Abstract: A process is provided for effectively removing by-products such as oligomers contained within a crude resin for an electronic material, thus producing a resin for an electronic material. In this process, a crude resin for an electronic material containing (a1) structural units derived from a (meth)acrylate ester with a hydrophilic site is washed using (b1) an organic solvent which is capable of dissolving said crude resin for an electronic material and which separates into two layers when combined with water, and (b2) water.

Abstract: There are provided a resist composition that produces a resist pattern of good shape, and a method of forming a resist pattern that uses such a resist composition. The resist composition comprises a resin component (A) that undergoes a change in alkali solubility under the action of acid, an acid generator component (B) that generates acid on exposure, and an organic solvent (C), wherein the component (B) comprises a compound represented by a general formula (I) shown below [wherein, R1 to R3 each represent, independently, a methyl group or an ethyl group; and X? represents an anion].