Patents by Inventor Masaru Takizawa

Masaru Takizawa has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Schottky barrier diode
    Patent number: 9171967
    Abstract: A Schottky barrier diode is provided with: an n-type semiconductor layer including Ga2O3-based compound semiconductors with n-type conductivity; and a Schottky electrode layer which is in Schottky-contact with the n-type semiconductor layer. An n? -type semiconductor layer, which has a relatively low electron carrier concentration and is brought into Schottky-contact with the Schottky electrode layer, and an n+ semiconductor layer, which has a higher electron carrier concentration than the n semiconductor layer, are formed in the n-type semiconductor layer.
    Type: Grant
    Filed: November 8, 2012
    Date of Patent: October 27, 2015
    Assignee: TAMURA CORPORATION
    Inventors: Masaru Takizawa, Akito Kuramata
  • Beta-Ga2O3-Based Single Crystal Substrate
    Publication number: 20150249185
    Abstract: A ?-Ga2O3-based single crystal substrate includes a ?-Ga2O3-based single crystal. The ?-Ga2O3-based single crystal includes a full width at half maximum of an x-ray rocking curve of less than 75 seconds.
    Type: Application
    Filed: February 26, 2015
    Publication date: September 3, 2015
    Inventors: Kimiyoshi KOSHI, Shinya Watanabe, Masaru Takizawa, Yu Yamaoka, Daiki Wakimoto, Makoto Watanabe
  • SCHOTTKY BARRIER DIODE
    Publication number: 20140332823
    Abstract: A Schottky barrier diode is provided with: an n-type semiconductor layer including Ga2O3-based compound semiconductors with n-type conductivity; and a Schottky electrode layer which is in Schottky-contact with the n-type semiconductor layer. An n?-type semiconductor layer, which has a relatively low electron carrier concentration and is brought into Schottky-contact with the Schottky electrode layer, and an n+ semiconductor layer, which has a higher electron carrier concentration than the n semiconductor layer, are formed in the n-type semiconductor layer.
    Type: Application
    Filed: November 8, 2012
    Publication date: November 13, 2014
    Inventors: Masaru Takizawa, Akito Kuramata