Abstract: An absorbent article due to which a product outer surface or an underwear does not easily impart a moist feel while suppressing reduction in a stuffiness-preventing property. The absorbent article includes an absorber; a liquid impervious resin film covering a back surface side of the absorber; and an exterior nonwoven fabric covering a back surface side of the liquid impervious resin film. The liquid impervious resin film having moisture perviousness in a thickness direction, in which a cellulose nanofiber layer is disposed between the liquid impervious resin film and the exterior nonwoven fabric.

Abstract: Heating treatment is performed on a semiconductor wafer in an ammonia atmosphere formed in a chamber by light irradiation from halogen lamps and flash lamps. For the formation of the ammonia atmosphere in the chamber, pressure in the chamber is once reduced. The pressure in the chamber is also reduced after the heating treatment of the semiconductor wafer. Light irradiation from the halogen lamps is performed to heat the atmosphere in the chamber before the pressure in the chamber is reduced by exhausting the atmosphere from the chamber. The heating of the atmosphere in the chamber before the pressure reduction activates the thermal motion of gas molecules in the atmosphere and decreases a gas density. As a result, the gas molecules in the chamber are discharged rapidly during the pressure reduction, so that the pressure in the chamber is reduced to a predetermined pressure in a short time.

Abstract: An absorbent article that improves contact efficiency between a deodorant substance and an odor. The problem is solved by an absorbent article including an absorber and a liquid impervious resin film covering an outside of the absorber, in which a cellulose nanofiber layer is attached directly to a member outside the liquid impervious resin film, and the cellulose nanofiber layer can come into contact with an odor in an atmosphere outside the absorbent article.

Abstract: When a chamber of a heat treatment apparatus is opened for a purpose such as maintenance of the heat treatment apparatus, particles flow in large quantities into the chamber together with an outside atmosphere. After maintenance work is finished, an enclosed space is formed in the chamber and gas in the chamber is exhausted to place the interior of the chamber in a reduced-pressure atmosphere. While the interior of the chamber is in the reduced-pressure atmosphere, the interior of the chamber is irradiated with a flash of light emitted multiple times from a flash lamp to cause momentary gas expansion and subsequent gas shrinkage repeatedly, thereby causing particles adhering in the chamber to fly. The flying particles are discharged from the chamber to remove the particles.

Abstract: Over a front surface of a silicon semiconductor wafer is deposited a high dielectric constant film with a silicon oxide film, serving as an interface layer, provided between the semiconductor wafer and the high dielectric constant film. After a chamber houses the semiconductor wafer, a chamber's pressure is reduced to be lower than atmospheric pressure. Subsequently, a gaseous mixture of ammonia and nitrogen gas is supplied into the chamber to return the pressure to ordinary pressure, and the front surface is irradiated with a flash light, thereby performing post deposition annealing (PDA) on the high dielectric constant film. Since the pressure is reduced once to be lower than atmospheric pressure and then returned to ordinary pressure, a chamber's oxygen concentration is lowered remarkably during the PDA. This restricts an increase in thickness of the silicon oxide film underlying the high dielectric constant film by oxygen taken in during the PDA.

Abstract: The temperature of a susceptor made of quartz is increased by heat transfer and heat radiation from a heated semiconductor wafer. When the treated semiconductor wafer is transported outwardly, the susceptor has a non-uniform temperature distribution in which a central portion thereof is higher in temperature than an edge portion thereof. In an early stage of preheating in which a new semiconductor wafer is held by the susceptor and starts being irradiated with light emanating from halogen lamps, an intensity ratio that is the ratio of the intensity of light emanating from a central portion of a light irradiator including an array of the halogen lamps to the intensity of light emanating from an edge portion thereof is less than 100%. Thereafter, the ratio of the intensity of light emanating from the central portion of the light irradiator to the intensity of light emanating from the edge portion thereof is increased.

Abstract: Heating treatment is performed on a semiconductor wafer in an ammonia atmosphere formed in a chamber by light irradiation from halogen lamps and flash lamps. For the formation of the ammonia atmosphere in the chamber, pressure in the chamber is once reduced. The pressure in the chamber is also reduced after the heating treatment of the semiconductor wafer. Light irradiation from the halogen lamps is performed to heat the atmosphere in the chamber before the pressure in the chamber is reduced by exhausting the atmosphere from the chamber. The heating of the atmosphere in the chamber before the pressure reduction activates the thermal motion of gas molecules in the atmosphere and decreases a gas density. As a result, the gas molecules in the chamber are discharged rapidly during the pressure reduction, so that the pressure in the chamber is reduced to a predetermined pressure in a short time.

Abstract: A heat treatment apparatus is provided with two cool chambers, that is, a first cool chamber and a second cool chamber. A semiconductor wafer before treatment is alternately carried into the first cool chamber or the second cool chamber and then transported to a heat treatment part by a transport robot after a nitrogen purge is performed. The semiconductor wafer after being heat-treated in the heat treatment part is alternately transported to the first cool chamber or the second cool chamber to be cooled. A sufficient cooling time is secured for the independent semiconductor wafer, and a reduction in throughput as the whole heat treatment apparatus can be suppressed.

Abstract: A substrate in a chamber is preheated through light irradiation by a halogen lamp and then heated through irradiation with flash light from a flash lamp. Ammonia is supplied to the chamber from an ammonia supply mechanism to form ammonia atmosphere. The temperature of the substrate at heating processing is measured by a radiation thermometer. When the measurement wavelength band of the radiation thermometer overlaps with the absorption wavelength band of ammonia, the set emissivity of the radiation thermometer is changed and set to be lower than the actual emissivity of the substrate. When radiation light emitted from the substrate is absorbed by the ammonia atmosphere, the radiation thermometer can accurately output the temperature of the substrate as a measured value by reducing the set emissivity of the radiation thermometer.

Abstract: To obtain a wide stretching range in a waist stretching sheet, a tape-type disposable diaper has a main body including a waist stretching sheet and a fastening tape on a dorsal side portion B. The main body has a folded-back portion in which a side including a portion having a non-stretchable region of the waist stretching sheet is folded back to a center side and fixed.

Abstract: There is provided a surface modification method for a light metal casting that enables, with Friction Stir Processing, to further refine a surface at a portion at which the strength is especially required. A surface modification method for a light metal casting with Friction Stir Processing in which a rotating shaft and a rotator are rotated and fed while the rotating shaft and the rotator are being pressed against a surface of a casting to modify the surface of the casting, the method includes feeding the rotating shaft and the rotator while rotating the rotating shaft and the rotator in a manner such that a side at which a rotating direction of the rotating shaft and the rotator coincides with a feeding direction is positioned at a portion at which increase in the strength is desired with modification of the light metal casting.

Abstract: Over a front surface of a silicon semiconductor wafer is deposited a high dielectric constant film with a silicon oxide film, serving as an interface layer, provided between the semiconductor wafer and the high dielectric constant film. After a chamber houses the semiconductor wafer, a chamber's pressure is reduced to be lower than atmospheric pressure. Subsequently, a gaseous mixture of ammonia and nitrogen gas is supplied into the chamber to return the pressure to ordinary pressure, and the front surface is irradiated with a flash light, thereby performing post deposition annealing (PDA) on the high dielectric constant film. Since the pressure is reduced once to be lower than atmospheric pressure and then returned to ordinary pressure, a chamber's oxygen concentration is lowered remarkably during the PDA. This restricts an increase in thickness of the silicon oxide film underlying the high dielectric constant film by oxygen taken in during the PDA.

Abstract: A metal film is deposited on a front surface of a semiconductor wafer of silicon. After the semiconductor wafer is received in a chamber, the pressure in the chamber is reduced to a pressure lower than atmospheric pressure. Thereafter, nitrogen gas is supplied into the chamber to return the pressure in the chamber to ordinary pressure, and the front surface of the semiconductor wafer is irradiated with a flash of light, so that a silicide that is a compound of the metal film and silicon is formed. The oxygen concentration in the chamber is significantly lowered during the formation of the silicide because the pressure in the chamber is reduced once to the pressure lower than atmospheric pressure and then returned to the ordinary pressure. This suppresses the increase in resistance of the silicide resulting from the entry of oxygen in the atmosphere in the chamber into defects near the interface between the metal film and a base material.

Abstract: A manufacturing method of a cylinder block (10) includes: a step of forming a slit (14) to flow refrigerant therein, between adjacent cylinder bores (CB) among a plurality of cylinder bores provided in a cylinder portion (11); a step of placing a first cover (20a) in the slit and welding the first cover to the cylinder portion by laser beam welding; and a step of placing a second cover (20b) on the first cover and joining the second cover to the cylinder portion by friction stir welding.

Abstract: A transportation preparation operation for transporting a semiconductor wafer from a treatment chamber is started before a temperature of the semiconductor wafer decreases to a transportable temperature. A gate valve is closed after a treatment on the semiconductor wafer is started, and an operation of transporting the semiconductor wafer into the treatment chamber is completed. A period of time for treating the semiconductor wafer and a period of time for transporting the semiconductor wafer in and out are overlapped with each other, thus a time required for transporting the semiconductor wafer W into and out of the treatment chamber can be reduced.

Abstract: The temperature of a susceptor made of quartz is increased by heat transfer and heat radiation from a heated semiconductor wafer. When the treated semiconductor wafer is transported outwardly, the susceptor has a non-uniform temperature distribution in which a central portion thereof is higher in temperature than an edge portion thereof. In an early stage of preheating in which a new semiconductor wafer is held by the susceptor and starts being irradiated with light emanating from halogen lamps, an intensity ratio that is the ratio of the intensity of light emanating from a central portion of a light irradiator including an array of the halogen lamps to the intensity of light emanating from an edge portion thereof is less than 100%. Thereafter, the ratio of the intensity of light emanating from the central portion of the light irradiator to the intensity of light emanating from the edge portion thereof is increased.

Abstract: A substrate in a chamber is preheated through light irradiation by a halogen lamp and then heated through irradiation with flash light from a flash lamp. Ammonia is supplied to the chamber from an ammonia supply mechanism to form ammonia atmosphere. The temperature of the substrate at heating processing is measured by a radiation thermometer. When the measurement wavelength band of the radiation thermometer overlaps with the absorption wavelength band of ammonia, the set emissivity of the radiation thermometer is changed and set to be lower than the actual emissivity of the substrate. When radiation light emitted from the substrate is absorbed by the ammonia atmosphere, the radiation thermometer can accurately output the temperature of the substrate as a measured value by reducing the set emissivity of the radiation thermometer.

Abstract: A semiconductor wafer to be treated is heated at a first preheating temperature ranging from 100 to 200° C. while a pressure in a chamber housing the semiconductor wafer is reduced to a pressure lower than an atmospheric pressure. After the semiconductor wafer is preheated to increase the temperature into a second preheating temperature ranging from 500 to 700° C. while the pressure in the chamber is restored to a pressure higher than the reduced pressure, a flash lamp emits a flashlight to a surface of the semiconductor wafer. Heating the semiconductor wafer at the first preheating temperature that is a relatively low temperature enables, for example, the moisture absorbed on the surface of the semiconductor wafer in trace amounts to be desorbed from the surface, and also enables the flash heating treatment to be performed with oxygen derived from such absorption removed as much as possible.

Abstract: A metal film is deposited on a front surface of a semiconductor wafer of silicon. After the semiconductor wafer is received in a chamber, the pressure in the chamber is reduced to a pressure lower than atmospheric pressure. Thereafter, nitrogen gas is supplied into the chamber to return the pressure in the chamber to ordinary pressure, and the front surface of the semiconductor wafer is irradiated with a flash of light, so that a silicide that is a compound of the metal film and silicon is formed. The oxygen concentration in the chamber is significantly lowered during the formation of the silicide because the pressure in the chamber is reduced once to the pressure lower than atmospheric pressure and then returned to the ordinary pressure. This suppresses the increase in resistance of the silicide resulting from the entry of oxygen in the atmosphere in the chamber into defects near the interface between the metal film and a base material.

Abstract: A semiconductor wafer held by a susceptor in a chamber is irradiated with halogen light radiated from a plurality of halogen lamps to be heated. A stainless steel block having an opening in a cylindrical shape is provided between the chamber and the halogen lamps. This reduces a distance from a light emitting portion in a light source region in which the plurality of halogen lamps is arranged, throughout the entire circumference of the opening in a cylindrical shape, so that the amount of reflected light from the inner wall surface of the opening toward the peripheral portion of the semiconductor wafer becomes uniform. This causes a uniform increase in illuminance of the peripheral portion of the semiconductor wafer, where temperature tends to decrease, at the time of light irradiation from the halogen lamps, so that in-plane temperature distribution of the semiconductor wafer can be made uniform.