Abstract: A silicon carbide semiconductor device includes a transistor region, a diode region, a gate line region, and a gate pad region. The gate pad region and the gate line region are each disposed to be sandwiched between the diode region and the diode region, and a gate electrode on the gate pad region and the gate line region is formed on an insulating film formed on an epitaxial layer. Thus, breakdown of the insulating film in the gate region can be prevented without causing deterioration in quality of the gate insulating film, upon switching and avalanche breakdown.

Abstract: It is judged whether or not an average gray level of an image of a wafer W that is an inspection target and that has been imaged by the light receiving part 2 is in the defect detectable range. A control processing part 6a is configured to modify an exposure time in imaging the wafer W and to obtain an image of the wafer W again by the light receiving part 2 in the case in which it is decided that an average gray level of an image of the wafer W is not in a defect detectable range, and an image processing part 6b is configured to carry out a defect inspection based on an image of the wafer W in the case in which it is decided that an average gray level of the image of the wafer W is in the defect detectable range.

Abstract: In order to keep possible local temperature differences in a liquid ejection head small to allow stable liquid ejection performance to be achieved, temperatures in a plurality of heating areas in a liquid ejection head are discretely controlled using heating elements and temperature detection elements.

Abstract: A valve timing controller has a housing, a vane rotor, a valve body and a spool. The valve body has a supply port to communicate with an external oil feed section, a first drain port to communicate with a first oil pressure chamber, and a second drain port to communicate with a second oil pressure chamber. The supply port includes a supply recess recessed outward in a radial direction from an inner wall surface of a pipe part of the valve body. The second drain port includes a drain recess recessed outward in the radial direction from the inner wall surface of the pipe part. A depth of the drain recess in the radial direction is smaller than a depth of the supply recess in the radial direction.

Abstract: Heating is stopped in between recordings in a first recording mode where the time between recordings is relatively long, while heating is continuously performed in between recordings in a second recording mode where the time between recordings is relatively short.

Abstract: To achieve high waterproofness, a grommet that is attached so as to cover a shield pipe and a corrugated tube so as to bridge therebetween includes a pipe-side end portion that is formed in a tubular shape capable of being sealingly connected to an outer circumferential side of the pipe, and a corrugated-side end portion that is formed in a tubular shape capable of being sealingly connected to an outer circumferential side of the corrugated tube. A plurality of sealing lips that closely contact to an outer surface of the shield pipe are formed on an inner surface of the pipe-side end portion. The sealing lips are disposed inside and outside a width region W that is fastened by a fastening band disposed on an outer surface of the pipe-side end portion.

Abstract: Heating is stopped in between recordings in a first recording mode where the time between recordings is relatively long, while heating is continuously performed in between recordings in a second recording mode where the time between recordings is relatively short.

Abstract: A silicon carbide semiconductor device includes a transistor region, a diode region, a gate line region, and a gate pad region. The gate pad region and the gate line region are each disposed to be sandwiched between the diode region and the diode region, and a gate electrode on the gate pad region and the gate line region is formed on an insulating film formed on an epitaxial layer. Thus, breakdown of the insulating film in the gate region can be prevented without causing deterioration in quality of the gate insulating film, upon switching and avalanche breakdown.

Abstract: A switch system realizes extension of the number of entries of an open flow table by using tables in a switch as existing resources. Specifically, the switch configures an open flow table by logically combining a plurality of tables, each of which defines processing to a given packet, based on a condition and a processing content defined in each table. The switch refers to the open flow table to determine the processing content to a reception packet. The switch executes the processing of the reception packet based on the determined processing content.

Abstract: A semiconductor device includes first and second second-conductivity-type region groups containing multiple second-conductivity-type regions that are disposed on a first silicon carbide semiconductor layer of a first conductivity type, arrayed in parallel following one direction with a space between each other, and first and second electrodes disposed on the first silicon carbide semiconductor layer and forming a Schottky junction with the first silicon carbide semiconductor layer. The first electrode covers a position where a distance from adjacent first and second second-conductivity-type regions included in a first second-conductivity-type region group, and a distance from a third second-conductivity-type region included in a second second-conductivity-type region group and adjacent to the first and second second-conductivity-type regions, are equal.

Abstract: To achieve high waterproofness, a grommet that is attached so as to cover a shield pipe and a corrugated tube so as to bridge therebetween includes a pipe-side end portion that is formed in a tubular shape capable of being sealingly connected to an outer circumferential side of the pipe, and a corrugated-side end portion that is formed in a tubular shape capable of being sealingly connected to an outer circumferential side of the corrugated tube. A plurality of sealing lips that closely contact to an outer surface of the shield pipe are formed on an inner surface of the pipe-side end portion. The sealing lips are disposed inside and outside a width region W that is fastened by a fastening band disposed on an outer surface of the pipe-side end portion.

Abstract: To achieve high waterproofness, a grommet that is attached so as to cover a shield pipe and a corrugated tube so as to bridge therebetween includes a pipe-side end portion that is formed in a tubular shape capable of being sealingly connected to an outer circumferential side of the pipe, and a corrugated-side end portion that is formed in a tubular shape capable of being sealingly connected to an outer circumferential side of the corrugated tube. A plurality of sealing lips that closely contact to an outer surface of the shield pipe are formed on an inner surface of the pipe-side end portion. The sealing lips are disposed inside and outside a width region W that is fastened by a fastening band disposed on an outer surface of the pipe-side end portion.

Abstract: A valve timing control apparatus includes a check valve, a filter, and a filter holding body. The check valve is placed between a camshaft and a vane rotor. The filter is placed between the camshaft and the check valve. The filter holding body includes a plurality of metal plates, which are stacked one after another. Two metal plates, which serve as enlarged space forming plates, are placed adjacent to the filter on one side of the filter where the camshaft is placed while each of the two metal plates includes enlarged through holes. A metal plate, which serves as an enlarged space forming plate, is placed adjacent to the filter on another side of the filter and includes enlarged through holes. A flow passage cross-sectional area of each enlarged through hole is larger than a flow passage cross-sectional area of a supply oil passage.

Abstract: A semiconductor device according to an aspect of the present disclosure includes a semiconductor substrate having a first conductivity type and having a principal surface and a back surface, a silicon carbide semiconductor layer having the first conductivity type and disposed on the principal surface of the semiconductor substrate, a guard ring region having a second conductivity type and disposed within the silicon carbide semiconductor layer, a floating region having the second conductivity type and disposed within the silicon carbide semiconductor layer, a first electrode disposed on the silicon carbide semiconductor layer, and a second electrode disposed on the back surface of the semiconductor substrate, wherein the guard ring region and the floating region each include a pair of a high-concentration region having the second conductivity type and a low-concentration region having the second conductivity type.

Abstract: An ink-jet recording device is capable of correcting a recording position due to a leaning of a printing head and correcting of driving timing between multiple printing heads. Each nozzle row of a printing head is classified into multiple nozzle groups, and the driving timing of the nozzle groups other than the nozzle group serving as a reference of correction of the multiple nozzle groups is adjustable to correct for any leaning of the printing head. Moreover, in the event of performing the driving timing between printing heads, the driving timing of a non-reference printing head is adjustable relative to a reference printing head employed for leaning correction of multiple printing heads.

Abstract: An apparatus and a method of recording in which an ink ejection failure due to an excessive rise in the temperature of ejection ports is prevented while preventing a decrease in throughput. If ink can run out and the amount of ink ejected to one unit area is large, recording on the unit area is performed with an increased number of scans.

Abstract: A vane rotor includes a laminated portion and seal portions. The laminated portion includes a plurality of metal plates, which are stacked in an axial direction. The seal portions are placed on two axially opposite sides of each of an advancing port, a retarding port, and a supply port. Each seal portion is configured into an annular form to extend along an outer peripheral surface of a sleeve in a circumferential direction and is engaged with the laminated portion to limit deformation of the seal portion toward a radially outer side. The seal portion is made of a material that has a thermal expansion coefficient, which is larger than a thermal expansion coefficient of a material of each metal plate.