Patents by Inventor Masashi Sahashi
Masashi Sahashi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11244781Abstract: A magnetization control element according to an aspect of the invention includes a magnetization control layer containing a magnetoelectric material exhibiting a magnetoelectric effect, and a magnetic coupling layer that is magnetically coupled to a magnetization of a first surface of the magnetization control layer through exchange coupling and exhibits a magnetic state according to the magnetization of the first surface, wherein a magnetization having a component in a direction opposite to a direction of a magnetization of the magnetic coupling layer is imparted to the magnetization control layer.Type: GrantFiled: April 20, 2018Date of Patent: February 8, 2022Assignee: TDK CORPORATIONInventors: Tatsuo Shibata, Masashi Sahashi, Tomohiro Nozaki
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Publication number: 20200194157Abstract: A magnetization control element according to an aspect of the invention includes a magnetization control layer containing a magnetoelectric material exhibiting a magnetoelectric effect, and a magnetic coupling layer that is magnetically coupled to a magnetization of a first surface of the magnetization control layer through exchange coupling and exhibits a magnetic state according to the magnetization of the first surface, wherein a magnetization having a component in a direction opposite to a direction of a magnetization of the magnetic coupling layer is imparted to the magnetization control layer.Type: ApplicationFiled: April 20, 2018Publication date: June 18, 2020Applicant: TDK CORPORATIONInventors: Tatsuo SHIBATA, Masashi SAHASHI, Tomohiro NOZAKI
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Patent number: 9520175Abstract: A magnetization controlling element includes a ferromagnetic material layer, an exchange coupling adjustment layer, an antiferromagnetic material layer, an electrode layer, a magnetic field applying mechanism which applies a magnetic field to the antiferromagnetic material layer, and an electric field applying mechanism which applies an electric field to the antiferromagnetic material layer. The antiferromagnetic material layer contains an antiferromagnetic material or ferrimagnetic material having a magnetoelectric effect, the ferromagnetic material layer includes a perpendicular magnetization film having a magnetization component perpendicular to the film surface, the ferromagnetic material layer includes a ferromagnetic material layer that is magnetically connected, through exchange coupling, to the antiferromagnetic material layer. The exchange coupling adjustment layer has a function of adjusting exchange coupling between the ferromagnetic material layer and the antiferromagnetic material layer.Type: GrantFiled: November 4, 2014Date of Patent: December 13, 2016Assignee: TDK CorporationInventors: Tatsuo Shibata, Masashi Sahashi
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Publication number: 20150123755Abstract: A magnetization controlling element includes a ferromagnetic material layer, an exchange coupling adjustment layer, an antiferromagnetic material layer, an electrode layer, a magnetic field applying mechanism which applies a magnetic field to the antiferromagnetic material layer, and an electric field applying mechanism which applies an electric field to the antiferromagnetic material layer. The antiferromagnetic material layer contains an antiferromagnetic material or ferrimagnetic material having a magnetoelectric effect, the ferromagnetic material layer includes a perpendicular magnetization film having a magnetization component perpendicular to the film surface, the ferromagnetic material layer includes a ferromagnetic material layer that is magnetically connected, through exchange coupling, to the antiferromagnetic material layer. The exchange coupling adjustment layer has a function of adjusting exchange coupling between the ferromagnetic material layer and the antiferromagnetic material layer.Type: ApplicationFiled: November 4, 2014Publication date: May 7, 2015Inventors: Tatsuo SHIBATA, Masashi SAHASHI
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Patent number: 8929035Abstract: A magnetoresistance effect element having a magnetoresistance effect film and a pair of electrode, the magnetoresistance effect film having a first magnetic layer whose direction of magnetization is substantially pinned in one direction, a second magnetization layer whose direction of magnetization changes in response to an external magnetic field, a nonmagnetic intermediate layer located between the first and second magnetic layers, and a film provided in the first magnetic layer, in the second magnetic layer, at an interface between the first magnetic layer and the nonmagnetic intermediate layer, and/or at an interface between the second magnetic layer and the nonmagnetic intermediate layer.Type: GrantFiled: May 19, 2009Date of Patent: January 6, 2015Assignee: Kabushiki Kaisha ToshibaInventors: Hideaki Fukuzawa, Hiromi Yuasa, Hiromi Fuke, Hitoshi Iwasaki, Masashi Sahashi
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Patent number: 8724434Abstract: A magnetic recording system including follows: a recording head, a recording medium that includes a first recording medium layer, a second recording medium layer, and a substrate. The magnetic recording system includes an electric field applying device applying an electric field and a magnetic field applying device applying a magnetic field to the recording medium, a movement mechanism that moves them to an arbitrary position. The magnetic recording system has a function of controlling an applying direction of at least one of the electric field applying device and the magnetic field applying device, and the recording head is arranged at a position facing the recording medium.Type: GrantFiled: March 15, 2013Date of Patent: May 13, 2014Assignee: TDK CorporationInventors: Mikio Matsuzaki, Koichi Shinohara, Tatsuo Shibata, Masashi Sahashi, Tomohiro Nozaki
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Publication number: 20130279309Abstract: A magnetic recording system including follows: a recording head, a recording medium that includes a first recording medium layer, a second recording medium layer, and a substrate. The magnetic recording system includes an electric field applying device applying an electric field and a magnetic field applying device applying a magnetic field to the recording medium, a movement mechanism that moves them to an arbitrary position. The magnetic recording system has a function of controlling an applying direction of at least one of the electric field applying device and the magnetic field applying device, and the recording head is arranged at a position facing the recording medium.Type: ApplicationFiled: March 15, 2013Publication date: October 24, 2013Inventors: Mikio MATSUZAKI, Koichi Shinohara, Tatsuo Shibata, Masashi Sahashi, Tomohiro Nozaki
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Patent number: 8259419Abstract: There are provided a magnetoresistance effect element, a magnetic head, a magnetic head assembly and a magnetic recording system, which have high sensitivity and high reliability. The magnetoresistance effect element has two ferromagnetic layers, a non-magnetic layer provided between the ferromagnetic layers, and a layer containing an oxide or nitride as a principal component, wherein the layer containing the oxide or nitride as the principal component contains a magnetic transition metal element which does not bond to oxygen and nitrogen and which is at least one of Co, Fe and Ni.Type: GrantFiled: September 23, 2011Date of Patent: September 4, 2012Assignee: Kabushiki Kaisha ToshibaInventors: Hideaki Fukuzawa, Katsuhiko Koi, Hiromi Fuke, Hiroshi Tomita, Hitoshi Iwasaki, Masashi Sahashi
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Publication number: 20120009440Abstract: There are provided a magnetoresistance effect element, a magnetic head, a magnetic head assembly and a magnetic recording system, which have high sensitivity and high reliability. The magnetoresistance effect element has two ferromagnetic layers, a non-magnetic layer provided between the ferromagnetic layers, and a layer containing an oxide or nitride as a principal component, wherein the layer containing the oxide or nitride as the principal component contains a magnetic transition metal element which does not bond to oxygen and nitrogen and which is at least one of Co, Fe and Ni.Type: ApplicationFiled: September 23, 2011Publication date: January 12, 2012Applicant: KABUSHIKI KAISHA TOSHIBAInventors: Hideaki FUKUZAWA, Katsuhiko KOI, Hiromi FUKE, Hiroshi TOMITA, Hitoshi IWASAKI, Masashi SAHASHI
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Patent number: 8085511Abstract: A magnetoresistance effect element includes a magnetoresistance effect film including a magnetically pinned layer having a magnetic material film whose direction of magnetization is pinned substantially in one direction, a magnetically free layer having a magnetic material film whose direction of magnetization changes in response to an external magnetic field, and a nonmagnetic metal intermediate layer located between said pinned layer and said free layer. The element also includes a pair of electrodes electrically connected to the magnetoresistance effect film to supply a sense current perpendicularly to a film plane of the magnetoresistance effect film. At least one of the pinned layer and the free layer may include a thin-film insertion layer.Type: GrantFiled: September 23, 2008Date of Patent: December 27, 2011Assignee: Kabushiki Kaisha ToshibaInventors: Hiromi Yuasa, Yuzo Kamiguchi, Masatoshi Yoshikawa, Katsuhiko Koui, Hitoshi Iwasaki, Tomohiko Nagata, Takeo Sakakubo, Masashi Sahashi
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Patent number: 8049999Abstract: There are provided a magnetoresistance effect element, a magnetic head, a magnetic head assembly and a magnetic recording system, which have high sensitivity and high reliability. The magnetoresistance effect element has two ferromagnetic layers, a non-magnetic layer provided between the ferromagnetic layers, and a layer containing an oxide or nitride as a principal component, wherein the layer containing the oxide or nitride as the principal component contains a magnetic transition metal element which does not bond to oxygen and nitrogen and which is at least one of Co, Fe and Ni.Type: GrantFiled: December 31, 2008Date of Patent: November 1, 2011Assignee: Kabushiki Kaisha ToshibaInventors: Hideaki Fukuzawa, Katsuhiko Koi, Hiromi Fuke, Hiroshi Tomita, Hitoshi Iwasaki, Masashi Sahashi
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Patent number: 7897274Abstract: A magnetoresistive device includes a magnetization pinned layer, a magnetization free layer, a nonmagnetic intermediate layer formed between the magnetization pinned layer and the magnetization free layer, and electrodes allowing a sense current to flow in a direction substantially perpendicular to the plane of the stack including the magnetization pinned layer, the nonmagnetic intermediate layer and the magnetization free layer. At least one of the magnetization pinned layer and the magnetization free layer is substantially formed of a binary or ternary alloy represented by the formula FeaCobNic (where a+b+c=100 at %, and a?75 at %, b?75 at %, and c?63 at %), or formed of an alloy having a body-centered cubic crystal structure.Type: GrantFiled: March 13, 2007Date of Patent: March 1, 2011Assignee: Kabushiki Kaisha ToshibaInventors: Hiromi Yuasa, Masatoshi Yoshikawa, Yuzo Kamiguchi, Hitoshi Iwasaki, Masashi Sahashi
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Patent number: 7898774Abstract: A spin valve type magnetoresistive effect element for vertical electric conduction includes a magnetoresistive effect film in which a resistance adjustment layer made of a material containing conductive carriers not more than 1022/cm3 is inserted. Thus the resistance value of a portion in change of spin-relied conduction is raised to an adequate value, thereby to increase the resistance variable amount.Type: GrantFiled: October 31, 2007Date of Patent: March 1, 2011Assignee: Kabushiki Kaisha ToshibaInventors: Hiromi Yuasa, Masatoshi Yoshikawa, Katsuhiko Koui, Hitoshi Iwasaki, Masashi Sahashi
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Magnetoresistance effect element, magnetic head, magnetic reproducing apparatus, and magnetic memory
Patent number: 7843669Abstract: A magnetoresistance effect element comprises a magnetoresistance effect film and a pair of electrode. The magnetoresistance effect film having a first magnetic layer whose direction of magnetization is substantially pinned in one direction; a second magnetic layer whose direction of magnetization changes in response to an external magnetic field; a nonmagnetic intermediate layer located between the first and second magnetic layers; and a film provided in the first magnetic layer, in the second magnetic layer, at a interface between the first magnetic layer and the nonmagnetic intermediate layer, and/or at a interface between the second magnetic layer and the nonmagnetic intermediate layer, the film having a thickness not larger than 3 nanometers, and the film has as least one selected from the group consisting of nitride, oxinitride, phosphide, and fluoride.Type: GrantFiled: February 6, 2009Date of Patent: November 30, 2010Assignee: Kabushiki Kaisha ToshibaInventors: Hideaki Fukuzawa, Hiromi Yuasa, Hiromi Fuke, Hitoshi Iwasaki, Masashi Sahashi -
Patent number: 7791843Abstract: There is provided a practical magnetoresistance effect element which has an appropriate value of resistance, which can be sensitized and which has a small number of magnetic layers to be controlled, and a magnetic head and magnetic recording and/or reproducing system using the same. In a magnetoresistance effect element wherein a sense current is caused to flow in a direction perpendicular to the plane of the film, a resistance regulating layer is provided in at least one of a pinned layer, a free layer and an non-magnetic intermediate layer. The resistance regulating layer contains, as a principal component, an oxide, a nitride, a fluoride, a carbide or a boride. The resistance regulating layer may be a continuous film or may have pin holes. Thus, it is possible to provide a practical magnetoresistance effect element which has an appropriate value of resistance, which can be sensitized and which has a small number of magnetic layers, while effectively utilizing the scattering effect depending on spin.Type: GrantFiled: July 6, 2009Date of Patent: September 7, 2010Assignee: Kabushiki Kaisha ToshibaInventors: Yuuzo Kamiguchi, Hiromi Yuasa, Tomohiko Nagata, Hiroaki Yoda, Katsuhiko Koui, Masatoshi Yoshikawa, Hitoshi Iwasaki, Masashi Sahashi, Masayuki Takagishi
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Patent number: 7738220Abstract: A magnetoresistance effect element, comprising a nonmagnetic spacer layer, first and second ferromagnetic layers separated by the nonmagnetic spacer layer, the first ferromagnetic layer having a magnetization direction at an angle relative to a magnetization direction of the second ferromagnetic layer at zero applied magnetic field, the magnetization of the first ferromagnetic layer freely rotating in a magnetic field signal, a magnetoresistance effect-improving layer comprising a plurality of metal films and disposed in contact with the first ferromagnetic layer so that the first ferromagnetic layer is disposed between the nonmagnetic spacer layer and the magnetoresistance effect-improving layer, one of the plurality of metal films disposed in contact with the first ferromagnetic layer contains metal element of not solid solution with metal element of the first ferromagnetic layer and a nonmagnetic underlayer or a nonmagnetic protecting layer disposed in contact with the magnetoresistance effect-improving laType: GrantFiled: July 17, 2007Date of Patent: June 15, 2010Assignee: Kabushiki Kaisha ToshibaInventors: Hideaki Fukuzawa, Yuzo Kamiguchi, Katsuhiko Koui, Shin-ichi Nakamura, Hitoshi Iwasaki, Kazuhiro Saito, Hiromi Fuke, Masatoshi Yoshikawa, Susumu Hashimoto, Masashi Sahashi
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Patent number: 7719800Abstract: An example magnetoresistive effect element includes a magnetoresistive effect film including a magnetization pinned layer, a magnetization free layer, and an intermediate layer interposed therebetween and having a magnetic region and a nonmagnetic region whose electrical resistance is higher than the magnetic region. A sense current is passed to the magnetoresistive effect film in a direction substantially perpendicular to the film plane thereof. The magnetic region of the intermediate layer penetrates the nonmagnetic region locally and extends in the direction substantially perpendicular to the film plane. The nonmagnetic region contains a nonmagnetic metallic element having a larger surface energy than a magnetic metallic element contained in the magnetic region.Type: GrantFiled: December 26, 2006Date of Patent: May 18, 2010Assignees: Kabuhsiki Kaisha Toshiba, TDK CorporationInventors: Susumu Hashimoto, Hiromi Fuke, Hitoshi Iwasaki, Masaaki Doi, Kousaku Miyake, Masashi Sahashi
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Publication number: 20090269618Abstract: There is provided a practical magnetoresistance effect element which has an appropriate value of resistance, which can be sensitized and which has a small number of magnetic layers to be controlled, and a magnetic head and magnetic recording and/or reproducing system using the same. In a magnetoresistance effect element wherein a sense current is caused to flow in a direction perpendicular to the plane of the film, a resistance regulating layer is provided in at least one of a pinned layer, a free layer and an non-magnetic intermediate layer. The resistance regulating layer contains, as a principal component, an oxide, a nitride, a fluoride, a carbide or a boride. The resistance regulating layer may be a continuous film or may have pin holes. Thus, it is possible to provide a practical magnetoresistance effect element which has an appropriate value of resistance, which can be sensitized and which has a small number of magnetic layers, while effectively utilizing the scattering effect depending on spin.Type: ApplicationFiled: July 6, 2009Publication date: October 29, 2009Applicant: KABUSHIKI KAISHA TOSHIBAInventors: Yuuzo KAMIGUCHI, Hiromi Yuasa, Tomohiko Nagata, Hiroaki Yoda, Katsuhiko Koui, Masatoshi Yoshikawa, Hitoshi Iwasaki, Masashi Sahashi, Masayuki Takagishi
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Magnetoresistance effect element, magnetic head, magnetic reproducing apparatus, and magnetic memory
Patent number: 7593195Abstract: A magnetoresistance effect element comprises a magnetoresistance effect film and a pair of electrode. The magnetoresistance effect film having a first magnetic layer whose direction of magnetization is substantially pinned in one direction; a second magnetic layer whose direction of magnetization changes in response to an external magnetic field; a nonmagnetic intermediate layer located between the first and second magnetic layers; and a film provided in the first magnetic layer, in the second magnetic layer, at a interface between the first magnetic layer and the nonmagnetic intermediate layer, and/or at a interface between the second magnetic layer and the nonmagnetic intermediate layer, the film having a thickness not larger than 3 nanometers, and the film has as least one selected from the group consisting of nitride, oxinitride, phosphide, and fluoride.Type: GrantFiled: December 12, 2006Date of Patent: September 22, 2009Assignee: Kabushiki Kaisha ToshibaInventors: Hideaki Fukuzawa, Hiromi Yuasa, Hiromi Fuke, Hitoshi Iwasaki, Masashi Sahashi -
MAGNETORESISTANCE EFFECT ELEMENT, MAGNETIC HEAD, MAGNETIC REPRODUCING APPARATUS, AND MAGNETIC MEMORY
Publication number: 20090225477Abstract: A magnetoresistance effect element comprises a magnetoresistance effect film and a pair of electrode. The magnetoresistance effect film having a first magnetic layer whose direction of magnetization is substantially pinned in one direction; a second magnetic layer whose direction of magnetization changes in response to an external magnetic field; a nonmagnetic intermediate layer located between the first and second magnetic layers; and a film provided in the first magnetic layer, in the second magnetic layer, at a interface between the first magnetic layer and the nonmagnetic intermediate layer, and/or at a interface between the second magnetic layer and the nonmagnetic intermediate layer, the film having a thickness not larger than 3 nanometers, and the film has as least one selected from the group consisting of oxide, nitride, oxinitride, phosphide, and fluoride.Type: ApplicationFiled: May 19, 2009Publication date: September 10, 2009Applicant: Kabushiki Kaisha ToshibaInventors: Hideaki FUKUZAWA, Hiromi Yuasa, Hiromi Fuke, Hitoshi Iwasaki, Masashi Sahashi