Patents by Inventor Masashi Sahashi
Masashi Sahashi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 7561383Abstract: There is provided a practical magnetoresistance effect element which has an appropriate value of resistance, which can be sensitized and which has a small number of magnetic layers to be controlled, and a magnetic head and magnetic recording and/or reproducing system using the same. In a magnetoresistance effect element wherein a sense current is caused to flow in a direction perpendicular to the plane of the film, a resistance regulating layer is provided in at least one of a pinned layer, a free layer and an non-magnetic intermediate layer. The resistance regulating layer contains, as a principal component, an oxide, a nitride, a fluoride, a carbide or a boride. The resistance regulating layer may be a continuous film or may have pin holes. Thus, it is possible to provide a practical magnetoresistance effect element which has an appropriate value of resistance, which can be sensitized and which has a small number of magnetic layers, while effectively utilizing the scattering effect depending on spin.Type: GrantFiled: September 17, 2008Date of Patent: July 14, 2009Assignee: Kabushiki Kaisha ToshibaInventors: Yuuzo Kamiguchi, Hiromi Yuasa, Tomohiko Nagata, Hiroaki Yoda, Katsuhiko Koui, Masatoshi Yoshikawa, Hitoshi Iwasaki, Masashi Sahashi, Masayuki Takagishi
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MAGNETORESISTANCE EFFECT ELEMENT, MAGNETIC HEAD, MAGNETIC REPRODUCING APPARATUS, AND MAGNETIC MEMORY
Publication number: 20090141408Abstract: A magnetoresistance effect element comprises a magnetoresistance effect film and a pair of electrode. The magnetoresistance effect film having a first magnetic layer whose direction of magnetization is substantially pinned in one direction; a second magnetic layer whose direction of magnetization changes in response to an external magnetic field; a nonmagnetic intermediate layer located between the first and second magnetic layers; and a film provided in the first magnetic layer, in the second magnetic layer, at a interface between the first magnetic layer and the nonmagnetic intermediate layer, and/or at a interface between the second magnetic layer and the nonmagnetic intermediate layer, the film having a thickness not larger than 3 nanometers, and the film has as least one selected from the group consisting of nitride, oxinitride, phosphide, and fluoride.Type: ApplicationFiled: February 6, 2009Publication date: June 4, 2009Applicant: Kabushiki Kaisha ToshibaInventors: Hideaki Fukuzawa, Hiromi Yuasa, Hiromi Fuke, Hitoshi Iwasaki, Masashi Sahashi -
Publication number: 20090109581Abstract: There are provided a magnetoresistance effect element, a magnetic head, a magnetic head assembly and a magnetic recording system, which have high sensitivity and high reliability. The magnetoresistance effect element has two ferromagnetic layers, a non-magnetic layer provided between the ferromagnetic layers, and a layer containing an oxide or nitride as a principal component, wherein the layer containing the oxide or nitride as the principal component contains a magnetic transition metal element which does not bond to oxygen and nitrogen and which is at least one of Co, Fe and Ni.Type: ApplicationFiled: December 31, 2008Publication date: April 30, 2009Applicant: KABUSHIKI KAISHA TOSHIBAInventors: Hideaki FUKUZAWA, Katsuhiko Koi, Hiromi Fuke, Hiroshi Tomita, Hitoshi Iwasaki, Masashi Sahashi
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Patent number: 7515386Abstract: There is provided a practical magnetoresistance effect element which has an appropriate value of resistance, which can be sensitized and which has a small number of magnetic layers to be controlled, and a magnetic head and magnetic recording and/or reproducing system using the same. In a magnetoresistance effect element wherein a sense current is caused to flow in a direction perpendicular to the plane of the film, a resistance regulating layer is provided in at least one of a pinned layer, a free layer and an non-magnetic intermediate layer. The resistance regulating layer contains, as a principal component, an oxide, a nitride, a fluoride, a carbide or a boride. The resistance regulating layer may be a continuous film or may have pin holes. Thus, it is possible to provide a practical magnetoresistance effect element which has an appropriate value of resistance, which can be sensitized and which has a small number of magnetic layers, while effectively utilizing the scattering effect depending on spin.Type: GrantFiled: March 27, 2006Date of Patent: April 7, 2009Assignee: Kabushiki Kaisa ToshibaInventors: Yuuzo Kamiguchi, Hiromi Yuasa, Tomohiko Nagata, Hiroaki Yoda, Katsuhiko Koui, Masatoshi Yoshikawa, Hitoshi Iwasaki, Masashi Sahashi, Masayuki Takagishi
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Patent number: 7511927Abstract: A spin valve type magnetoresistive effect element for vertical electric conduction includes a magnetoresistive effect film in which a resistance adjustment layer made of a material containing conductive carriers not more than 1022/cm3 is inserted. Thus the resistance value of a portion in change of spin-relied conduction is raised to an adequate value, thereby to increase the resistance variable amount.Type: GrantFiled: November 21, 2005Date of Patent: March 31, 2009Assignee: Kabushiki Kaisha ToshibaInventors: Hiromi Yuasa, Masatoshi Yoshikawa, Katsuhiko Koui, Hitoshi Iwasaki, Masashi Sahashi
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Magnetoresistance effect element, magnetic head, magnetic reproducing apparatus, and magnetic memory
Patent number: 7505234Abstract: A magnetoresistance effect element comprises a magnetoresistance effect film and a pair of electrode. The magnetoresistance effect film having a first magnetic layer whose direction of magnetization is substantially pinned in one direction; a second magnetic layer whose direction of magnetization changes in response to an external magnetic field; a nonmagnetic intermediate layer located between the first and second magnetic layers; and a film provided in the first magnetic layer, in the second magnetic layer, at a interface between the first magnetic layer and the nonmagnetic intermediate layer, and/or at a interface between the second magnetic layer and the nonmagnetic intermediate layer, the film having a thickness not larger than 3 nanometers, and the film has as least one selected from the group consisting of oxide, nitride, oxinitride, phosphide, and fluoride.Type: GrantFiled: October 31, 2007Date of Patent: March 17, 2009Assignee: Kabushiki Kaisha ToshibaInventors: Hideaki Fukuzawa, Hiromi Yuasa, Hiromi Fuke, Hitoshi Iwasaki, Masashi Sahashi -
Publication number: 20090034134Abstract: A magnetoresistance effect element includes a magnetoresistance effect film including a magnetically pinned layer having a magnetic material film whose direction of magnetization is pinned substantially in one direction, a magnetically free layer having a magnetic material film whose direction of magnetization changes in response to an external magnetic field, and a nonmagnetic metal intermediate layer located between said pinned layer and said free layer. The element also includes a pair of electrodes electrically connected to the magnetoresistance effect film to supply a sense current perpendicularly to a film plane of the magnetoresistance effect film. At least one of the pinned layer and the free layer may include a thin-film insertion layer.Type: ApplicationFiled: September 23, 2008Publication date: February 5, 2009Applicant: KABUSHIKI KAISHA TOSHIBAInventors: Hiromi Yuasa, Yuzo Kamiguchi, Masatoshi Yoshikawa, Katsuhiko Koul, Hitoshi Iwasaki, Tomohiko Nagata, Takeo Sakakubo, Masashi Sahashi
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Publication number: 20090021869Abstract: There is provided a practical magnetoresistance effect element which has an appropriate value of resistance, which can be sensitized and which has a small number of magnetic layers to be controlled, and a magnetic head and magnetic recording and/or reproducing system using the same. In a magnetoresistance effect element wherein a sense current is caused to flow in a direction perpendicular to the plane of the film, a resistance regulating layer is provided in at least one of a pinned layer, a free layer and an non-magnetic intermediate layer. The resistance regulating layer contains, as a principal component, an oxide, a nitride, a fluoride, a carbide or a boride. The resistance regulating layer may be a continuous film or may have pin holes. Thus, it is possible to provide a practical magnetoresistance effect element which has an appropriate value of resistance, which can be sensitized and which has a small number of magnetic layers, while effectively utilizing the scattering effect depending on spin.Type: ApplicationFiled: September 17, 2008Publication date: January 22, 2009Applicant: KABUSHIKI KAISHA TOSHIBAInventors: Yuuzo KAMIGUCHI, Hiromi YUASA, Tomohiko NAGATA, Hiroaki YODA, Katsuhiko KOUI, Masatoshi YOSHIKAWA, Hitoshi IWASAKI, Masashi SAHASHI, Masayuki TAKAGISHI
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Patent number: 7476414Abstract: There are provided a magnetoresistance effect element, a magnetic head, a magnetic head assembly and a magnetic recording system, which have high sensitivity and high reliability. The magnetoresistance effect element has two ferromagnetic layers, a non-magnetic layer provided between the ferromagnetic layers, and a layer containing an oxide or nitride as a principal component, wherein the layer containing the oxide or nitride as the principal component contains a magnetic transition metal element which does not bond to oxygen and nitrogen and which is at least one of Co, Fe and Ni.Type: GrantFiled: December 2, 2004Date of Patent: January 13, 2009Assignee: Kabushiki Kaisha ToshibaInventors: Hideaki Fukuzawa, Katsuhiko Koi, Hiromi Fuke, Hiroshi Tomita, Hitoshi Iwasaki, Masashi Sahashi
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Patent number: 7463456Abstract: A spin valve type magnetoresistive effect element for vertical electric conduction includes a magnetoresistive effect film in which a resistance adjustment layer made of a material containing conductive carriers not more than 1022/cm3 is inserted. Thus the resistance value of a portion in change of spin-relied conduction is raised to an adequate valve, thereby to increase the resistance variable amount.Type: GrantFiled: April 9, 2007Date of Patent: December 9, 2008Assignee: Kabushiki Kaisha ToshibaInventors: Hiromi Yuasa, Masatoshi Yoshikawa, Katsuhiko Koui, Hitoshi Iwasaki, Masashi Sahashi
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Patent number: 7443004Abstract: In a spin valve type element, an interface insertion layer (32, 34) of a material exhibiting large spin-dependent interface scattering is inserted in a location of a magnetically pinned layer (16) or a magnetically free layer (20) closer to a nonmagnetic intermediate layer (18). A nonmagnetic back layer (36) may be additionally inserted as an interface not in contact with the nonmagnetic intermediate layer to increase the output by making use of spin-dependent interface scattering along the interface between the pinned layer and the nonmagnetic back layer or between the free layer and the nonmagnetic back layer.Type: GrantFiled: November 22, 2005Date of Patent: October 28, 2008Assignee: Kabushiki Kaisha ToshibaInventors: Hiromi Yuasa, Yuzo Kamiguchi, Masatoshi Yoshikawa, Katsuhiko Koui, Hitoshi Iwasaki, Tomohiko Nagata, Takeo Sakakubo, Masashi Sahashi
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Patent number: 7379278Abstract: A magnetoresistance effect element comprises a magnetoresistance effect film including a magnetically pinned layer whose direction of magnetization is pinned substantially in one direction, a magnetically free layer whose direction of magnetization changes in response to an external magnetic field, and a nonmagnetic intermediate layer located between the pinned layer and the free layer; and a pair of electrodes electrically connected to said magnetoresistance effect film to supply a sense current perpendicularly to a film plane of said magnetoresistance effect film, The intermediate layer has a first layer including a first region whose resistance is relatively high and second regions whose resistance is relatively low. The sense current preferentially flows through the second regions when the current passes the first layer.Type: GrantFiled: April 7, 2006Date of Patent: May 27, 2008Assignee: Kabushiki Kaisha ToshibaInventors: Katsuhiko Koui, Masatoshi Yoshikawa, Masayuki Takagishi, Masashi Sahashi, Takeo Sakakubo, Hitoshi Iwasaki
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Patent number: 7375405Abstract: A magnetoresistance effect (MR) device incorporating a spin valve film, and a magnetic head, a magnetic head assembly and a magnetic recording/reproducing system incorporating the MR device, wherein the magnetization direction of a free layer is at a certain angle to the magnetization direction of a second ferromagnetic layer therein when the applied magnetic field is zero. A pinned magnetic layer includes a pair of ferromagnetic films antiferromagnetically coupled to each other via a coupling film existing therebetween. The magnetization direction of either one of the pair of ferromagnetic films constituting the pinned magnetic layer is maintained, and a nonmagnetic high-conductivity layer is disposed adjacent to a first ferromagnetic layer on the side opposite to the side on which the first ferromagnetic layer is contacted with a nonmagnetic spacer layer. With that constitution, the device has extremely high sensitivity, and the bias point in the device is well controlled.Type: GrantFiled: March 15, 2005Date of Patent: May 20, 2008Assignee: Kabushiki Kaisha ToshibaInventors: Hideaki Fukuzawa, Yuzo Kamiguchi, Katsuhiko Koui, Shin-ichi Nakamura, Hitoshi Iwasaki, Kazuhiro Saito, Hiromi Fuke, Masatoshi Yoshikawa, Susumu Hashimoto, Masashi Sahashi
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Publication number: 20080068765Abstract: A spin valve type magnetoresistive effect element for vertical electric conduction includes a magnetoresistive effect film in which a resistance adjustment layer made of a material containing conductive carriers not more than 1022/cm3 is inserted. Thus the resistance value of a portion in change of spin-relied conduction is raised to an adequate value, thereby to increase the resistance variable amount.Type: ApplicationFiled: October 31, 2007Publication date: March 20, 2008Applicant: KABUSHIKI KAISHA TOSHIBAInventors: Hiromi Yuasa, Masatoshi Yoshikawa, Katsuhiko Koui, Hitoshi Iwasaki, Masashi Sahashi
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MAGNETORESISTANCE EFFECT ELEMENT, MAGNETIC HEAD, MAGNETIC REPRODUCING APPARATUS, AND MAGNETIC MEMORY
Publication number: 20080068764Abstract: A magnetoresistance effect element comprises a magnetoresistance effect film and a pair of electrode. The magnetoresistance effect film having a first magnetic layer whose direction of magnetization is substantially pinned in one direction; a second magnetic layer whose direction of magnetization changes in response to an external magnetic field; a nonmagnetic intermediate layer located between the first and second magnetic layers; and a film provided in the first magnetic layer, in the second magnetic layer, at a interface between the first magnetic layer and the nonmagnetic intermediate layer, and/or at a interface between the second magnetic layer and the nonmagnetic intermediate layer, the film having a thickness not larger than 3 nanometers, and the film has as least one selected from the group consisting of oxide, nitride, oxinitride, phosphide, and fluoride.Type: ApplicationFiled: October 31, 2007Publication date: March 20, 2008Applicant: Kabushiki Kaisha ToshibaInventors: Hideaki Fukuzawa, Hiromi Yuasa, Hiromi Fuke, Hitoshi Iwasaki, Masashi Sahashi -
MAGNETORESISTANCE EFFECT ELEMENT, MAGNETIC HEAD, MAGNETIC REPRODUCING APPARATUS, AND MAGNETIC MEMORY
Publication number: 20080062577Abstract: A magnetoresistance effect element comprises a magnetoresistance effect film and a pair of electrode. The magnetoresistance effect film having a first magnetic layer whose direction of magnetization is substantially pinned in one direction; a second magnetic layer whose direction of magnetization changes in response to an external magnetic field; a nonmagnetic intermediate layer located between the first and second magnetic layers; and a film provided in the first magnetic layer, in the second magnetic layer, at a interface between the first magnetic layer and the nonmagnetic intermediate layer, and/or at a interface between the second magnetic layer and the nonmagnetic intermediate layer, the film having a thickness not larger than 3 nanometers, and the film has as least one selected from the group consisting of oxide, nitride, oxinitride, phosphide, and fluoride.Type: ApplicationFiled: October 31, 2007Publication date: March 13, 2008Applicant: Kabushiki Kaisha ToshibaInventors: Hideaki FUKUZAWA, Hiromi Yuasa, Hiromi Fuke, Hitoshi Iwasaki, Masashi Sahashi -
Publication number: 20080013218Abstract: A magnetoresistive effect element, includes: a magnetoresistive effect film including: a magnetization fixed layer having a first ferromagnetic film of which magnetization direction is practically fixed in one direction; a magnetization free layer having a second ferromagnetic film of which magnetization direction changes with corresponding to an external magnetic field; and a spacer layer disposed between the magnetization fixed layer and magnetization free layer, and having an insulating layer and a ferromagnetic metal portion penetrating through the insulating layer; a pair of electrodes applying a sense current in a perpendicular direction relative to a film surface of the magnetoresistive effect film; and a layer containing a non-ferromagnetic element disposed at least one of an inside of the magnetization fixed layer-and an inside of the magnetization free layer.Type: ApplicationFiled: July 9, 2007Publication date: January 17, 2008Applicants: KABUSHIKI KAISHA TOSHIBA, TDK CORPORATIONInventors: Hiromi Fuke, Susumu Hashimoto, Masayuki Takagishi, Hitoshi Iwasaki, Masashi Sahashi, Masaaki Doi, Kousaku Miyake
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Magnetoresistance effect element, magnetic head, magnetic reproducing apparatus, and magnetic memory
Patent number: 7301733Abstract: A magnetoresistance effect element comprises a magnetoresistance effect film and a pair of electrode. The magnetoresistance effect film having a first magnetic layer whose direction of magnetization is substantially pinned in one direction; a second magnetic layer whose direction of magnetization changes in response to an external magnetic field; a nonmagnetic intermediate layer located between the first and second magnetic layers; and a film provided in the first magnetic layer, in the second magnetic layer, at a interface between the first magnetic layer and the nonmagnetic intermediate layer, and/or at a interface between the second magnetic layer and the nonmagnetic intermediate layer, the film having a thickness not larger than 3 nanometers, and the film has as least one selected from the group consisting of oxide, nitride, oxinitride, phosphide, and fluoride.Type: GrantFiled: March 28, 2003Date of Patent: November 27, 2007Assignee: Kabushiki Kaisha ToshibaInventors: Hideaki Fukuzawa, Hiromi Yuasa, Hiromi Fuke, Hitoshi Iwasaki, Masashi Sahashi -
Publication number: 20070259213Abstract: A magnetoresistance effect element comprises: a magnetoresistance effect film, a pair of electrodes, and a phase separation layer. The magnetoresistance effect film includes a first ferromagnetic layer whose direction of magnetization is pinned substantially in one direction, a second ferromagnetic layer whose direction of magnetization changes in response to an external magnetic field, and an intermediate layer provided between the first and second ferromagnetic layers. The pair of electrodes are electrically coupled to the magnetoresistance effect film and configured to supply a sense current perpendicularly to a film plane of the magnetoresistance effect film. The phase separation layer is provided between the pair of electrodes. The phase separation layer has a first phase and a second phase formed by a phase separation in a solid phase from an alloy including a plurality of elements.Type: ApplicationFiled: April 30, 2007Publication date: November 8, 2007Applicant: KABUSHIKI KAISHA TOSHIBAInventors: Susumu HASHIMOTO, Katsuhiko Koui, Masashi Sahashi, Hitoshi Iwasaki
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Publication number: 20070177310Abstract: A spin valve type magnetoresistive effect element for vertical electric conduction includes a magnetoresistive effect film in which a resistance adjustment layer made of a material containing conductive carriers not more than 1022/cm3 is inserted. Thus the resistance value of a portion in change of spin-relied conduction is raised to an adequate valve, thereby to increase the resistance variable amount.Type: ApplicationFiled: April 9, 2007Publication date: August 2, 2007Applicant: KABUSHIKI KAISHA TOSHIBAInventors: Hiromi YUASA, Masatoshi Yoshikawa, Katsuhiko Koui, Hitoshi Iwasaki, Masashi Sahashi