Abstract: Disclosed herein is a planar magnetic element comprising a substrate, a first magnetic layer arranged over the substrate, a first insulation layer arranged over the first magnetic layer, a planer coil formed of a conductor, having a plurality of turns, arranged over the first insulation layer and having a gap aspect ratio of at least 1, the gap aspect ratio being the ratio of the thickness of the conductor to the gap between any adjacent two of the turns, a second insulation layer arranged over the planar coil, and a second magnetic layer arranged over the second insulation layer. When used as an inductor, the planar magnetic element has a great quality coefficient Q. When used as a transformer, it has a large gain and a high voltage ratio. Since the element is small and thin, it is suitable for use in an integrated circuit, and can greatly contribute to miniaturization of electronic devices.

Abstract: The present invention provides an exchange coupling film having a stacked-film-structure consisting of a ferromagnetic film made of at least one material of Fe, Co and Ni, and an antiferromagnetic film, wherein the exchange coupling film made of a ferromagnetic material to which an element is added, is provided at the interface between the ferromagnetic film and the antiferromagnetic film so as to improve the lattice matching, which results in the enhancement of the exchange coupling force, and a magnetoresistance effect element including such an exchange coupling film as described above, and an electrode for supplying a current to the ferromagnetic film which constitutes the exchange coupling film.

Abstract: There is provided a practical magnetoresistance effect element which has an appropriate value of resistance, which can be sensitized and which has a small number of magnetic layers to be controlled, and a magnetic head and magnetic recording and/or reproducing system using the same. In a magnetoresistance effect element wherein a sense current is caused to flow in a direction perpendicular to the plane of the film, a resistance regulating layer is provided in at least one of a pinned layer, a free layer and an non-magnetic intermediate layer. The resistance regulating layer contains, as a principal component, an oxide, a nitride, a fluoride, a carbide or a boride. The resistance regulating layer may be a continuous film or may have pin holes. Thus, it is possible to provide a practical magnetoresistance effect element which has an appropriate value of resistance, which can be sensitized and which has a small number of magnetic layers, while effectively utilizing the scattering effect depending on spin.

Abstract: There are provided a magnetoresistance effect element, a magnetic head, a magnetic head assembly and a magnetic recording system, which have high sensitivity and high reliability. The magnetoresistance effect element has two ferromagnetic layers, a non-magnetic layer provided between the ferromagnetic layers, and a layer containing an oxide or nitride as a principal component, wherein the layer containing the oxide or nitride as the principal component contains a magnetic transition metal element which does not bond to oxygen and nitrogen and which is at least one of Co, Fe and Ni.

Abstract: Disclosed are a high-sensitivity and high-reliability magnetoresistance effect device (MR device) in which bias point designing is easy, and also a magnetic head, a magnetic head assembly and a magnetic recording/reproducing system incorporating the MR device. In the MR device incorporating a spin valve film, the magnetization direction of the free layer is at a certain angle to the magnetization direction of a second ferromagnetic layer therein when the applied magnetic field is zero. In this, the pinned magnetic layer comprises a pair of ferromagnetic films as antiferromagnetically coupled to each other via a coupling film existing therebetween.

Abstract: A magneto-resistance effect head records and reproduces recorded magnetic material. The magneto-resistance effect head has a magneto-resistance effect film connected to a pair of leads. Additionally, a magnetic yoke, with a first and second magnetic yoke member, directs a signal magnetic field from a recording medium to the magneto-resistance effect film. The magneto-resistance effect head is constructed such that the first and second magnetic yoke members have surfaces that face the recording medium. The surfaces of the first and second magnetic yoke members have a magnetic gap between them. Additionally, the magneto-resistance effect film is recessed from the medium facing surfaces by a predetermined distance. Moreover, the first and second magnetic yoke members are aligned almost in parallel with the magnetic flux flow from the recording medium to the first magnetic yoke member, the magneto-resistance effect film, and the second magnetic yoke member.

Abstract: The present invention provides an exchange coupling film having a stacked-film-structure consisting of a ferromagnetic film made of at least one material of Fe, Co and Ni, and an antiferromagnetic film, wherein the exchange coupling film made of a ferromagnetic material to which an element is added, is provided at the interface between the ferromagnetic film and the antiferromagnetic film so as to improve the lattice matching, which results in the enhancement of the exchange coupling force, and a magnetoresistance effect element including such an exchange coupling film as described above, and an electrode for supplying a current to the ferromagnetic film which constitutes the exchange coupling film.

Abstract: A magnetoresistive element includes a pinned layer, free layer and non-magnetic spacer film between them. The pinned layer is made up of a first ferromagnetic metal layer, first non-metal layer on the first ferromagnetic metal layer, second non-metal layer on the first non-metal layer and different in composition from the first non-metal layer, and second ferromagnetic metal layer on the second non-metal layer. Thus, the magnetoresistive element, which may be used in a magnetic head of a magnetic recording apparatus, ensures a good bias property of the pinned film while maintaining a large MR changing rate of a specular spin valve structure, and it is simultaneously improved in soft magnetic property.

Abstract: A magnetoresistance effect device comprises a magnetic multi-layer film having at least an antiferromagnetic film, a first ferromagnetic film, a non-magnetic film, and a second ferromagnetic film formed in the order on the front surface portion of the substrate, the magnetic multi-layer film having giant magnetoresistance effect, at least the second ferromagnetic film having a shape corresponding to a magnetic field detecting portion. The bias magnetic field applying films are disposed on a conductive film of the magnetic multi-layer film at outer portions of both edge portions of the magnetic field detecting portion of the magnetoresistance effective film. Alternatively, the second ferromagnetic film has a first portion corresponding to the magnetic field detecting portion and a second portion corresponding to the outer portions of both the edge portions of the magnetic field detecting portion, the film thickness-of the second portion being smaller than the film thickness of the first portion.

Abstract: According to the another aspect of the invention, a magnetoresistance effect element having a magnetoresistance effect film which includes a crystal growth controlling layer as one of films therein, characterized in that a roughness along a boundary between films overlying said crystal growth controlling layer is smaller than a roughness along a boundary between films underlying said crystal growth controlling layer is provided. According to the another aspect of the invention, a magnetoresistance effect element comprising a free layer, pinned layer and a non-magnetic intermediate layer interposed between said free layer and pinned layer, characterized in further comprising a metal barrier layer provided adjacent to said first magnetic layer, and an electron reflecting layer located adjacent to said metal barrier layer and containing at least one selected from oxides, nitrides, carbides, fluorides, chlorides, sulfides and borides is also provided.

Abstract: Disclosed are a high-sensitivity and high-reliability magnetoresistance effect device (MR device) in which bias point designing is easy, and also a magnetic head, a magnetic head assembly and a magnetic recording/reproducing system incorporating the MR device. In the MR device incorporating a spin valve film, the magnetization direction of the free layer is at a certain angle to the magnetization direction of a second ferromagnetic layer therein when the applied magnetic field is zero. In this, the pinned magnetic layer comprises a pair of ferromagnetic films as antiferromagnetically coupled to each other via a coupling film existing therebetween.

Abstract: A heat regenerative material including AMz, where A is at least one rare earth element selected from the group consisting of Y, La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm and Yb; M is at least one metal selected from the group consisting of Ni and Co; and z is 0.001 to 9.0; the heat regenerative material being formed of particles with an average diameter of 1-2,000 &mgr;m or filaments with an average diameter of 1-2,000 &mgr;m.

Abstract: A magnetoresistance effect device comprises a magnetic multi-layer film having at least an antiferromagnetic film, a first ferromagnetic film, a non-magnetic film, and a second ferromagnetic film formed in the order on the front surface portion of the substrate, the magnetic multi-layer film having giant magnetoresistance effect, at least the second ferromagnetic film having a shape corresponding to a magnetic field detecting portion. The bias magnetic field applying films are disposed on a conductive film of the magnetic multi-layer film at outer portions of both edge portions of the magnetic field detecting portion of the magnetoresistance effective film. Alternatively, the second ferromagnetic film has a first portion corresponding to the magnetic field detecting portion and a second portion corresponding to the outer portions of both the edge portions of the magnetic field detecting portion, the film thickness of the second portion being smaller than the film thickness of the first portion.

Abstract: When manufacturing a thin film magnetic head in which an upper magnetic pole is formed on a lower magnetic pole through a magnetic gap, firstly, at least on the lower magnetic pole, a convex portion possessing the width equivalent to a track width is formed. The convex portion forms a lower magnetic pole tip. Conforming to a contour of the convex shape of the lower magnetic pole, a non-magnetic material layer is formed. A flattening layer is formed on the non-magnetic material layer. The non-magnetic layer is etched with the flattening layer, for example, as a mask. In the non-magnetic material layer, a concave portion self-aligned to the lower portion magnetic pole top (convex portion) is formed. Inside the concave portion, a magnetic layer (upper magnetic pole tip) destined to be a part of the upper magnetic pole is formed.

Abstract: According to the another aspect of the invention, a magnetoresistance effect element having a magnetoresistance effect film which includes a crystal growth controlling layer as one of films therein, characterized in that a roughness along a boundary between films overlying said crystal growth controlling layer is smaller than a roughness along a boundary between films underlying said crystal growth controlling layer is provided. According to the another aspect of the invention, a magnetoresistance effect element comprising a free layer, pinned layer and a non-magnetic intermediate layer interposed between said free layer and pinned layer, characterized in further comprising a metal barrier layer provided adjacent to said first magnetic layer, and an electron reflecting layer located adjacent to said metal barrier layer and containing at least one selected from oxides, nitrides, carbides, fluorides, chlorides, sulfides and borides is also provided.

Abstract: Disclosed is a permanent magnet which comprises an alloy containing a hard magnetic phase having a ThMn12 type tetragonal structure and a nonmagnetic phase.

Abstract: A magnetic head has a recording magnetic yoke on the side of an air bearing surface of which a recording magnetic gap film is interposed and a reproducing magnetic yoke on the side of an air bearing surface of which a reproducing magnetic gap film is interposed. The magnetic yoke can serve concurrently for recording/reproducing. A recording coil supplying a recording magnetic flux to a recording medium through a recording magnetic yoke is disposed along one main surface of a magnetic yoke. An MR element in which a signal magnetic flux is led from a recording medium through a reproducing magnetic yoke is disposed along the other main surface on opposite side from a recording coil of a magnetic yoke. Or, at least on extension of a film plane of a magnetic gap film, a ferromagnetic layer is disposed so as for a film plane to exist in almost perpendicular direction relative to the film plane.

Abstract: A thin film magnetic head has a reproducing element or/and recording element which is held from the direction of its thickness between a first ceramic substrate and a second ceramic substrate. The reproducing element or/and recording element is positioned at substantially the center with respect to the direction of track width. The first and second ceramic substrates hold the reproducing element or/and recording element from, for example, the direction of track width. The reproducing element or/and recording element is provided with a yoke type reproducing part which has at least one pair of magnetic cores with a magnetic gap therebetween on the side of a medium opposed face and a magnetoresistance effect element to which a signal magnetic flux from a magnetic recording medium is led through the pair of magnetic cores.

Abstract: A planar inductor has a spiral coil, insulating layers stacked on both surfaces of the spiral coil, and ferromagnetic layers stacked on the insulating layers, wherein each ferromagnetic layer has a saturation magnetization 4&pgr;MS of 10 kG or more, and a thickness of 100 &mgr;m or less.

Abstract: A sputtering target consisting essentially of Mn and at least one kind of R element selected from a group of Ni, Pd, Pt, Co, Rh, Ir, V, Nb, Ta, Cu, Ag, Au, Ru, Os, Cr, Mo, W, and Re. The sputtering target, at least as a part of target texture, comprises one member selected from a group of an alloy phase and a compound phase formed between the R element and Mn. In addition, oxygen content in the target is 1 weight % or less (including 0). With such a sputtering target, an anti-ferromagnetic material film consisting of RMn alloy excellent in corrosion resistivity and thermal performance can be stabilized in its film composition and film quality. By employing the anti-ferromagnetic material film, when an exchange coupling film is formed by stacking the anti-ferromagnetic material film and the ferromagnetic material film, sufficient exchange coupling force is obtained stably. Such an exchange coupling film can be used in a magneto-resistance effect element and the like.