Abstract: A circle rotator of a motor grader includes a worm, a worm wheel and a shaft. The worm wheel has an inner peripheral portion, an outer peripheral portion enclosing the inner peripheral portion from outside, and a plurality of first clutch discs to be spline-coupled to the inner peripheral surface of the inner peripheral portion. The inner peripheral portion is made of a material harder than a material of which the outer peripheral portion is made.

Abstract: Service can be offered free of charge and the cost of a skin condition measuring device can be reduced by effectively using data on the occasion of obtaining an analysis result by transmitting measurement data by the skin condition measuring device to a server of a company providing a service of analyzing the measurement data. When a request is made from a contractor client to acquire data registered in a measurement data database, authentication is executed based on a contractor ID input from the contractor client. Additionally, when the measurement data database is searched from a contractor database based on the contractor ID, a search level and an access level are obtained. The contractor client is permitted to search the measurement data database within a range of the search level and the access level.

Abstract: The present method of manufacturing a GaN-based film includes the steps of preparing a composite substrate (10) including a support substrate (11) dissoluble in hydrofluoric acid and a single crystal film (13) arranged on a side of a main surface (11m) of the support substrate (11), a coefficient of thermal expansion in the main surface (11m) of the support substrate (11) being more than 0.8 time and less than 1.2 times as high as a coefficient of thermal expansion of GaN crystal, forming a GaN-based film (20) on a main surface (13m) of the single crystal film (13) arranged on the side of the main surface (11m) of the support substrate (11), and removing the support substrate (11) by dissolving the support substrate (11) in hydrofluoric acid. Thus, the method of manufacturing a GaN-based film capable of efficiently obtaining a GaN-based film having a large main surface area, less warpage, and good crystallinity, as well as a composite substrate used therefor are provided.

Abstract: The present method of manufacturing a GaN-based film includes the steps of preparing a composite substrate including a support substrate dissoluble in hydrofluoric acid and a single crystal film arranged on a side of a main surface of the support substrate, a coefficient of thermal expansion in the main surface of the support substrate being more than 0.8 time and less than 1.2 times as high as a coefficient of thermal expansion of GaN crystal, forming a GaN-based film on a main surface of the single crystal film arranged on the side of the main surface of the support substrate, and removing the support substrate by dissolving the support substrate in hydrofluoric acid. Thus, the method of manufacturing a GaN-based film capable of efficiently obtaining a GaN-based film having a large main surface area, less warpage, and good crystallinity, as well as a composite substrate used therefor are provided.

Abstract: A motor grader includes a frame and a work implement. The frame is box-shaped. The work implement is configured to be supported by the frame. The frame includes a bracket, a first frame part and a second frame part. The bracket has left and right side surfaces with which a lifter guide is formed in an integrated manner. The first frame part is configured to extend forward from a front end part of the bracket and support the work implement. The second frame part is configured to extend rearward from a rear end part of the bracket.

Abstract: The present invention provides a method for producing a Group III nitride crystal, capable of producing a Group III nitride crystal in a large size with few defects and high quality.

Abstract: The present method of manufacturing a GaN-based film includes the steps of preparing a composite substrate, the composite substrate including a support substrate in which a coefficient of thermal expansion in a main surface is more than 0.8 time and less than 1.2 times as high as a coefficient of thermal expansion of GaN crystal in a direction of a axis and a single crystal film arranged on a side of the main surface of the support substrate, the single crystal film having threefold symmetry with respect to an axis perpendicular to a main surface of the single crystal film, and forming a GaN-based film on the main surface of the single crystal film in the composite substrate. Thus, a method of manufacturing a GaN-based film capable of manufacturing a GaN-based film having a large main surface area and less warpage is provided.

Abstract: To provide a light-transmitting window material made of a spinel sintered body, wherein the largest diameter of pores contained in the light-transmitting window material is not more than 100 ?m, and the number of pores having a largest diameter of not less than 10 ?m is not more than 2.0 per 1 cm3 of the light-transmitting window material, and wherein light scattering factors are further reduced, and a method for producing a spinel light-transmitting window material including the steps of preparing a spinel molded body; a primary sintering step of sintering the spinel molded body at normal pressure or less or in a vacuum at a temperature in the range of 1500 to 1900° C.; and a secondary sintering step of sintering the spinel molded body under pressure at a temperature in the range of 1500 to 2000° C., wherein the relative density of the spinel molded body after the primary sintering step is 95 to 96% and the relative density of the spinel molded body after the secondary sintering step is 99.8% or more.

Abstract: The present method of manufacturing a GaN-based film includes the steps of preparing a composite substrate, the composite substrate including a support substrate in which a coefficient of thermal expansion in a main surface is more than 0.8 time and less than 1.2 times as high as a coefficient of thermal expansion of GaN crystal in a direction of a axis and a single crystal film arranged on a side of the main surface of the support substrate, the single crystal film having threefold symmetry with respect to an axis perpendicular to a main surface of the single crystal film, and forming a GaN-based film on the main surface of the single crystal film in the composite substrate. Thus, a method of manufacturing a GaN-based film capable of manufacturing a GaN-based film having a large main surface area and less warpage is provided.

Abstract: The present method of manufacturing a GaN-based film includes the steps of preparing a composite substrate including a support substrate dissoluble in hydrofluoric acid and a single crystal film arranged on a side of a main surface of the support substrate, a coefficient of thermal expansion in the main surface of the support substrate being more than 0.8 time and less than 1.2 times as high as a coefficient of thermal expansion of GaN crystal, forming a GaN-based film on a main surface of the single crystal film arranged on the side of the main surface of the support substrate, and removing the support substrate by dissolving the support substrate in hydrofluoric acid. Thus, the method of manufacturing a GaN-based film capable of efficiently obtaining a GaN-based film having a large main surface area, less warpage, and good crystallinity, as well as a composite substrate used therefor are provided.

Abstract: The present method of manufacturing a GaN-based film includes the steps of preparing a composite substrate, the composite substrate including a support substrate in which a coefficient of thermal expansion in a main surface is more than 0.8 time and less than 1.2 times as high as a coefficient of thermal expansion of GaN crystal in a direction of a axis and a single crystal film arranged on a side of the main surface of the support substrate, the single crystal film having threefold symmetry with respect to an axis perpendicular to a main surface of the single crystal film, and forming a GaN-based film on the main surface of the single crystal film in the composite substrate. Thus, a method of manufacturing a GaN-based film capable of manufacturing a GaN-based film having a large main surface area and less warpage is provided.

Abstract: A method of producing an optical element, in which a first and a second die are cooperated with each other so as to press-mold a material in order to produce an optical element including a lens portion, the first die has a circular cross-sectional shape, and the second die defines therein an interior space having a polygonal cross-sectional shape with respect to the direction of die-fastening, the first die is adapted to enter into the interior space of the second die in the direction of die-fastening in the interior space so to press-mold the material in order to form the lens surface while the material is bulged out through gaps between the first die and the second die around the lens surface whereby forming protrusions. An optical element and a mold assembly for an optical element are also provided.

Abstract: A method for producing a GaN crystal capable of achieving at least one of the prevention of nucleation and the growth of a high-quality non-polar surface is provided. The production method of the present invention is a method for producing a GaN crystal in a melt containing at least an alkali metal and gallium, including an adjustment step of adjusting the carbon content of the melt, and a reaction step of causing the gallium and nitrogen to react with each other. According to the production method of the present invention, nucleation can be prevented, and as shown in FIG. 4, a non-polar surface can be grown.

Abstract: To provide a light-transmitting window material made of a spinel sintered body, wherein the largest diameter of pores contained in the light-transmitting window material is not more than 100 ?m, and the number of pores having a largest diameter of not less than 10 ?m is not more than 2.0 per 1 cm3 of the light-transmitting window material, and wherein light scattering factors are further reduced, and a method for producing a spinel light-transmitting window material including the steps of preparing a spinel molded body; a primary sintering step of sintering the spinel molded body at normal pressure or less or in a vacuum at a temperature in the range of 1500 to 1900° C.; and a secondary sintering step of sintering the spinel molded body under pressure at a temperature in the range of 1500 to 2000° C., wherein the relative density of the spinel molded body after the primary sintering step is 95 to 96% and the relative density of the spinel molded body after the secondary sintering step is 99.8% or more.

Abstract: The present invention is a minimal-defect light-emitting device substrate that enables emitted light to issue from a device's substrate side, and is a light-emitting device 100 substrate furnished with a transparent substrate 10 that is transparent to light of wavelengths between 400 nm and 600 nm, inclusive, and a nitride-based compound semiconductor thin film 1c formed onto one of the major surfaces of the transparent substrate 10 by a join. Letting the thermal expansion coefficient of the transparent substrate along a direction perpendicular to the major surface of the transparent substrate be ?1, and the thermal expansion coefficient of the nitride-based compound semiconductor thin film be ?2, then (?1??2)/?2 is between ?0.5 and 1.0, inclusive, and at up to 1200° C. the transparent substrate does not react with the nitride-based compound semiconductor thin film 1c.

Abstract: A lens is manufactured by hardening soft material filled inside a molding tool by cooling. The lens includes a convex lens portion having an optical axis, and a marking portion located outside of an effective diameter of the lens portion. The shape or the position of the marking portion is set to prevent deformation of the marking portion by contact with the molding tool due to shrinkage of the material during cooling.

Abstract: A method of manufacturing a group III-nitride crystal substrate including the steps of introducing an alkali-metal-element-containing substance, a group III-element-containing substance and a nitrogen-element-containing substance into a reactor, forming a melt containing at least the alkali metal element, the group III-element and the nitrogen element in the reactor, and growing group III-nitride crystal from the melt, and characterized by handling the alkali-metal-element-containing substance in a drying container in which moisture concentration is controlled to at most 1.0 ppm at least in the step of introducing the alkali-metal-element-containing substance into the reactor is provided. A group III-nitride crystal substrate attaining a small absorption coefficient and the method of manufacturing the same, as well as a group III-nitride semiconductor device can thus be provided.

Abstract: A production method is provided in which Group-III-element nitride single crystals that have a lower dislocation density and a uniform thickness and are transparent, high quality, large, and bulk crystals can be produced with a high yield. The method for producing Group-III-element nitride single crystals includes: heating a reaction vessel containing at least one metal element selected from the group consisting of an alkali metal and an alkaline-earth metal and at least one Group III element selected from the group consisting of gallium (Ga), aluminum (Al), and indium (In) to prepare a flux of the metal element; and feeding nitrogen-containing gas into the reaction vessel and thereby allowing the Group III element and nitrogen to react with each other in the flux to grow Group-III-element nitride single crystals, wherein the single crystals are grown, with the flux being stirred by rocking the reaction vessel, for instance.

Abstract: An optical wavelength conversion element includes a cesium-lithium-borate crystal processed into a 10-mm long optical element cut in an orientation that allows a fourth harmonic of a Nd:YAG laser to be generated. A transmittance (Ta) at 3589 cm?1 in an infrared transmission spectrum of the optical element is used as an index that indicates a content of water impurities in the crystal and is independent of a polarization direction. An actual measurement of the transmittance Ta is at least 1%, without taking into account loss at an optically polished surface of the crystal. A wavelength conversion device, a ultraviolet laser irradiation apparatus, a laser processing system, and a method of manufacturing an optical wavelength conversion element are also described.

Abstract: A method of manufacturing group III-nitride semiconductor crystal includes the steps of accommodating an alloy containing at least a group III-metal element and an alkali metal element in a reactor, introducing a nitrogen-containing substance in the reactor, dissolving the nitrogen-containing substance in an alloy melt in which the alloy has been melted, and growing group III-nitride semiconductor crystal is provided. The group III-nitride semiconductor crystal attaining a small absorption coefficient and an efficient method of manufacturing the same, as well as a group III-nitride semiconductor device attaining high light emission intensity can thus be provided.