Abstract: An image sensor is provided. The image sensor includes: a substrate that includes a plurality of pixels, each of which includes a left sub-pixel and a right sub-pixel; a well region in the substrate on each of the plurality of pixels, the well region connecting the left sub-pixel and the right sub-pixel to each other; a pixel separation part that separates the plurality of pixels from each other and extends in the substrate between the left sub-pixel and the right sub-pixel; a left transfer transistor and a first logic transistor on the left sub-pixel; a right transfer transistor and a second logic transistor on the right sub-pixel; and a ground region in the substrate on one of the left sub-pixel and the right sub-pixel, and in contact with the well region. The ground region is adjacent to a corner of each of the plurality of pixels.

Abstract: An image sensor includes pixels, each including two photodiodes arranged side-by-side in a first direction, a deep trench isolation structure, a floating diffusion region, and transfer gates. The deep trench isolation structure includes an inner structure that extends in a second direction perpendicular to the first direction and that separates the two PDs of pixel from each other in the first direction, and an outer structure that extends in the first and second directions and that separates the pixels from each other in the first and second directions. The floating diffusion region is arranged between a center portion of the outer structure extending in the first direction and an edge of the inner structure. The transfer gates are disposed adjacent to the floating diffusion region such that one or more transfer gates are disposed on each photodiode. For each pixel, the two photodiodes share the floating diffusion region.

Abstract: An image sensor includes a semiconductor substrate having a first surface and a second surface opposite to the first surface, a transfer gate electrode provided on the first surface of the semiconductor substrate, readout circuit transistors spaced apart from the transfer gate electrode and provided on the first surface of the semiconductor substrate, and a photoelectric conversion layer provided in the semiconductor substrate at a side of the transfer gate electrode and including dopants of a first conductivity type. The photoelectric conversion layer includes a first region having a first thickness and a second region having a second thickness that is less than the first thickness. The second region overlaps with at least a portion of the readout circuit transistors in a direction perpendicular to the first surface of the semiconductor substrate.

Abstract: An image sensor includes a first photodiode group, a second photodiode group, a first transfer transistor group, a second transfer transistor group, a floating diffusion region of a substrate in which electric charges generated in the first photodiode group are stored, and a power supply node for applying a power supply voltage to the second photodiode group. A barrier voltage is applied to at least one transfer transistor of the second transfer transistor group. The power supply voltage allows electric charges, generated in the second photodiode group, to migrate to the power supply node, and the barrier voltage forms a potential barrier between the second photodiode group and the floating diffusion region.

Abstract: An image sensor is provided. The image sensor includes a first pixel region and a second pixel region located within a semiconductor substrate, a first isolation layer surrounding the first pixel region and the second pixel region, a second isolation layer located between the first pixel region and the second pixel region, and a microlens arranged on the first pixel region and the second pixel region. Each of the first pixel region and the second pixel region include a photoelectric conversion device. The second isolation layer includes at least one first open region that exposes a portion of an area located between the first pixel region and the second pixel region.

Abstract: An image sensor includes a substrate including a first side on which light is incident, and a second side opposite to the first side, a pixel isolation pattern formed inside the substrate which defines a plurality of unit pixels, a first photoelectric conversion region and a second photoelectric conversion region arranged along a first direction, inside each of the unit pixels, and a region isolation pattern which protrudes from the pixel isolation pattern in a second direction intersecting the first direction, and defines an isolation region between the first photoelectric conversion region and the second photoelectric conversion region. A first width of the isolation region in the second direction on the first side is more than about 1.1 times a second width of the isolation region in the second direction on the second side.

Abstract: An image sensor includes a substrate having a sensing area, a floating diffusion region arranged in the sensing area, a plurality of photodiodes arranged around the floating diffusion region in the sensing area, and an inter-pixel overflow (IPO) barrier in contact with each of the plurality of photodiodes, the IPO barrier overlapping the floating diffusion region in a vertical direction at a position vertically spaced apart from the floating diffusion region within the sensing area.

Abstract: An image sensor is provided. The image sensor includes a first pixel region and a second pixel region located within a semiconductor substrate, a first isolation layer surrounding the first pixel region and the second pixel region, a second isolation layer located between the first pixel region and the second pixel region, and a microlens arranged on the first pixel region and the second pixel region. Each of the first pixel region and the second pixel region include a photoelectric conversion device. The second isolation layer includes at least one first open region that exposes a portion of an area located between the first pixel region and the second pixel region.

Abstract: An image sensor includes: a first stack including: a first semiconductor substrate including a first surface and a second surface opposite to the first surface, a photoelectric conversion region in the first semiconductor substrate, and a floating diffusion region in the first semiconductor substrate, the floating diffusion region being configured to store charges transferred from the photoelectric conversion region; a second stack including: a second semiconductor substrate including a first surface and a second surface opposite the first surface, and a transmission gate penetrating through the second semiconductor substrate and extending into the first stack; and an insulation layer between the first stack and the second stack.

Abstract: Provided are an image sensor and a method of manufacturing the image sensor. The method includes forming a pixel isolation trench in a semiconductor substrate to extend from a first surface of the semiconductor substrate to the inside of the semiconductor substrate, forming a sacrificial layer on an inner wall of the pixel isolation trench, implanting a p-type impurity from a surface of the sacrificial layer into the sacrificial layer and the semiconductor substrate by a plasma doping process, a first concentration of the p-type impurity at the surface of the sacrificial layer being greater than a second concentration of the p-type impurity at a sidewall of the pixel isolation trench, removing the sacrificial layer, and forming a pixel isolation structure by forming an insulating liner and a conductive layer sequentially on the inner wall of the pixel isolation trench.

Abstract: A composite particle including carbon and silicon, in which the composite particle contains a crystalline metal oxide particle, and the end of the metal oxide particle is present inside the surface of the composite particle, and pores are present on the surface of the composite particle. According to the present invention, there can be provided a composite particle, in which silicon is attached to the inside of fine pores of a carbon material that has been provided with specific fine pores, the composite particle also contains a crystalline metal oxide particle, the end of the metal oxide particle is present inside the surface of the composite particle, and furthermore, pores are present on the surface of the composite particle. By using this composite particle, a lithium-ion secondary battery with excellent rate characteristics and cycle characteristics can be provided.

Abstract: An image sensor includes a substrate having a sensing area, a floating diffusion region arranged in the sensing area, a plurality of photodiodes arranged around the floating diffusion region in the sensing area, and an inter-pixel overflow (IPO) barrier in contact with each of the plurality of photodiodes, the IPO barrier overlapping the floating diffusion region in a vertical direction at a position vertically spaced apart from the floating diffusion region within the sensing area.

Abstract: A composite particle includes a particle including a carbon material and silicon, and a coating layer including carbon and oxygen on the surface of the particle, in which the composite particle has a true density of 1.80 to 1.99 g/cm3; in the Raman spectrum, a peak is present at 450 to 495 cm?1, and when the intensity of the peak is defined as ISi and the intensity of the G band is defined as IG, ISi/IG is 1.3 or less; and when the ratios of the number of atoms of Si, O, and C in X-ray photoelectron spectroscopy are defined as ASi, AO, and AC, respectively, and the ratios of SiO2 and SiO are defined as BSiO2 and BSiO, respectively, ASi is 0.05 or more, and ISi/IG and AC/(AC+ASi×(BSiO2+BSiO)) have predetermined relationships.

Abstract: One embodiment of the present invention is composite particles containing silicon and carbon, which are characterized as follows. When the cross-sectional diameter and the silicon content rate of the composite particles are measured by cross-sectional SEM-EDS and composite particles having a cross-sectional diameter of half or less than the number average of the cross-sectional diameter are defined as small diameter composite particles, the proportion of the number of the small diameter composite particles in the number of the composite particles measured is 5% or more and 50% or less, the ratio of the average silicon content rate (% by mass) of particles other than the small diameter composite particles to the average silicon content rate (% by mass) of the small diameter composite particles is 0.90 or less, and the silicon content rate of the entire composite particles is 45% by mass or more.

Abstract: An image sensor according to an example embodiment include a plurality of image pixel groups, a plurality of auto focusing (AF) pixel groups, a first transmission control signal line connected to a first pixel of each of the plurality of image pixel groups, a second transmission control signal line connected to a second pixel of each of the plurality of image pixel groups, a third transmission control signal line connected to a first pixel of each of the plurality of AF pixel groups, and a fourth transmission control signal line connected to a second pixel of each of the plurality of AF pixel groups, wherein the fourth transmission control signal line is electrically separated from the first to the third transmission control signal line, and the each of the plurality of image pixel group and the plurality of AF pixel groups are disposed below a single microlens.

Abstract: An image sensor, comprising a semiconductor substrate having first and second surfaces opposed to each other, a photoelectric conversion region in the semiconductor substrate, a floating diffusion region adjacent to the first surface in the semiconductor substrate, and a vertical transfer gate on the first surface of the semiconductor substrate, and extending in a direction perpendicular to the first surface and connected to the photoelectric conversion region. The vertical transfer gate may transfer photocharges collected in the photoelectric conversion region to the floating diffusion region. The vertical transfer gate includes a first vertical electrode portion and a second vertical electrode portion extending from the first surface of the semiconductor substrate in the vertical direction, and connected to the photoelectric conversion region, respectively.

Abstract: An image sensor includes a substrate having first and second surfaces, pixel regions arranged in a direction parallel to the first surface, first and second photodiodes isolated from each other in each of the pixel regions, a first device isolation film between the pixel regions, a pair of second device isolation films between the first and second photodiodes and extending from the first device isolation film, a doped layer adjacent to the pair of second device isolation films and extending from the second surface to a predetermined depth and spaced apart from the first surface, the doped layer being isolated from the first device isolation film, and a barrier area between the pair of second device isolation films and having a potential greater than a potential of a portion of the substrate adjacent to the barrier area.

Abstract: An image sensor includes a pixel array and a logic circuit. The pixel array includes a pixel isolation layer between a plurality of pixels. Each of the plurality of pixels include a pixel circuit below at least one photodiode. The logic circuit acquires a pixel signal from the plurality of pixels. The pixel array includes at least one autofocusing pixel, which includes a first photodiode, a second photodiode, a pixel internal isolation layer between the first and second photodiodes, and a microlens on the first and second photodiodes. The pixel internal isolation layer includes a first pixel internal isolation layer and a second pixel internal isolation layer, separated from each other in a first direction, perpendicular to the upper surface of the substrate, and the first pixel internal isolation layer and the second pixel internal isolation layer include different materials.

Abstract: The present invention relates to composite particles containing silicon and carbon, wherein a domain size region of vacancies of 2 nm or less is 44% by volume or more and 70% by volume or less when volume distribution information of domain sizes obtained by fitting a small-angle X-ray scattering spectrum of the composite particles with a spherical model in a carbon-vacancy binary system is accumulated in ascending order, and a true density calculated by dry density measurement by a constant volume expansion method using helium gas is 1.80 g/cm3 or more and 2.20 g/cm3 or less.

Abstract: An image sensor, comprising a semiconductor substrate having first and second surfaces opposed to each other, a photoelectric conversion region in the semiconductor substrate, a floating diffusion region adjacent to the first surface in the semiconductor substrate, and a vertical transfer gate on the first surface of the semiconductor substrate, and extending in a direction perpendicular to the first surface and connected to the photoelectric conversion region. The vertical transfer gate may transfer photocharges collected in the photoelectric conversion region to the floating diffusion region. The vertical transfer gate includes a first vertical electrode portion and a second vertical electrode portion extending from the first surface of the semiconductor substrate in the vertical direction, and connected to the photoelectric conversion region, respectively.