Patents by Inventor Masato Fujita

Masato Fujita has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 7410692
    Abstract: The present invention relates to a coated film comprising a polyester film and a coating layer provided on one side thereof, which coating layer is formed by applying a coating solution containing at least one binder resin (A), a polycarbodiimide compound (B) and a melamine compound (C).
    Type: Grant
    Filed: August 14, 2002
    Date of Patent: August 12, 2008
    Assignee: Mitsubishi Polyester Film Corporation
    Inventors: Toshihiro Koda, Masato Fujita
  • Publication number: 20080085608
    Abstract: In the process of forming a predetermined pattern in a process target film, a stacked hard mask film having a first film, a second film and a third film stacked in this order is formed on the process target film (S100), fine line patterns are formed in the third film through a fine-pattern-forming resist film while using the second film as an etching stopper (S102), and the fine-pattern-forming resist film is removed (S104). Subsequently, light exposure is carried out using a resist film (S106 to S110), and the second film, the first film and the process target film are then selectively dry-etched in a sequential manner, to thereby form the process target film into a predetermined pattern (S112). The first film remained on the process target film is then removed (S114).
    Type: Application
    Filed: November 16, 2006
    Publication date: April 10, 2008
    Inventors: Masato Fujita, Kensuke Taniguchi, Akira Mitsuiki
  • Publication number: 20070117395
    Abstract: A method for manufacturing a semiconductor device of the present invention includes: forming a first film, a second film and a third film in sequence on a silicon substrate; patterning a resist film formed on the third film by conducting an exposure and developing process for the resist film employing an exposure mask including a phase shifter; selectively dry-etching the third film through a mask of the resist film employing the second film as an etch stop to process the third film into a first pattern; further dry-etching the third film employing the second film as an etch stop to partially remove the third film, thereby processing the third film into a second pattern; patterning the second film employing the third film having the second pattern as a mask; and patterning the first film employing the patterned second film as a mask.
    Type: Application
    Filed: November 21, 2006
    Publication date: May 24, 2007
    Applicant: NEC ELECTRONICS CORPORATION
    Inventors: Toshihisa Koretsune, Masato Fujita
  • Publication number: 20070105094
    Abstract: A phospholipid vesicle such as a virus is to be rapidly separated (concentrated, roughly purified) and good detection (diagnosis) results can be obtained with suppressing inhibition of virus-denature, PCR inhibition, latex-aggregation inhibition, and the like. Moreover, the above operations are to be automated. A phospholipid vesicle is separated using a water-soluble cationic magnetic fine particle by a composite formation through a covalent bond or physical adsorption of a substance having a cationic functional group, a substance having a hydroxyl group, and a substance having magnetism.
    Type: Application
    Filed: October 20, 2006
    Publication date: May 10, 2007
    Applicant: CHISSO CORPORATION
    Inventors: Masato Fujita, Noriyuki Ohnishi
  • Publication number: 20030104216
    Abstract: The present invention relates to a coated film comprising a polyester film and a coating layer provided on one side thereof, which coating layer is formed by applying a coating solution containing at least one binder resin (A), a polycarbodiimide compound (B) and a melamine compound (C).
    Type: Application
    Filed: August 14, 2002
    Publication date: June 5, 2003
    Inventors: Toshihiro Koda, Masato Fujita
  • Patent number: 6485818
    Abstract: The present invention relates to a primer coated polyester film for imaging media which has a thickness of 40 to 200 &mgr;m, a haze of not more than 5%, and comprises a biaxially oriented polyester film support and at least one priming layer laminated on the support and oriented at least monoaxially. The priming layer is formed from a coating solution containing a water-soluble resin (A) having vinyl alcohol units as a main constituent and a water-soluble or water-despersible resin (B) having an aromatic polyester unit.
    Type: Grant
    Filed: April 26, 1999
    Date of Patent: November 26, 2002
    Assignee: Mitsubishi Polyester Film Corporation
    Inventor: Masato Fujita
  • Publication number: 20020061394
    Abstract: The present invention relates to a A primer coated polyester film for imaging media, which has a thickness of 40 to 200 &mgr;m and a haze of not more than 5%, and comprises a biaxially oriented polyester film support and at least one a priming layer laminated on said support and oriented at least monoaxially,
    Type: Application
    Filed: April 26, 1999
    Publication date: May 23, 2002
    Inventor: MASATO FUJITA
  • Patent number: 6165602
    Abstract: A laminated polyester film stretched in at least one direction, comprising:a polyester support, andat least one enhanced adhesion layer laminated on the polyester support, comprising a composition comprising:(1) an aromatic copolyester (A1) having a water-dispersible functional group, a polyvinyl alcohol resin (B1), and a vinylpyrrolidone copolymer resin (C1); or(2) an aromatic copolyester (A1) having a water-dispersible functional group, a polyvinyl alcohol resin (B1), and a polyglycerol polyglycidyl ether (C2); or(3) an aqueous-type polyurethane (A3), a polyvinyl alcohol resin (B3), and inert particles wherein the thickness (L) of the adhesion layer and the average particle diameter (d) of said inert particles satisfies the equation1/3.ltoreq.d/L.ltoreq.3.
    Type: Grant
    Filed: June 11, 1998
    Date of Patent: December 26, 2000
    Assignee: Mitsubishi Polyester Film Corporation
    Inventor: Masato Fujita
  • Patent number: 6143408
    Abstract: The present invention relates to a white laminated polyester film comprising:a polyester base film having a transmission density of not less than 0.2 and hue b value of the surface thereof of not more than 2; andan adhesive layer laminated on at least one side of the polyester base film, which adhesive layer is formed by applying a coating solution comprising a polyvinyl alcohol resin and a water-soluble resin, a water-dispersible resin or a mixture thereof.
    Type: Grant
    Filed: October 21, 1998
    Date of Patent: November 7, 2000
    Assignee: Mitsubishi Polyester Film Corporation
    Inventor: Masato Fujita
  • Patent number: 5962962
    Abstract: A method of encapsulation for an organic EL device, which overcomes the difficulty of conventional methods by fully preventing the growth of dark spots in the organic EL device by providing an inert liquid layer having a dissolved oxygen concentration of 1 ppm or less on the periphery of the organic EL device.
    Type: Grant
    Filed: March 5, 1997
    Date of Patent: October 5, 1999
    Assignee: Idemitsu Kosan Co., Ltd.
    Inventors: Masato Fujita, Kenichi Fukuoka
  • Patent number: 5391429
    Abstract: A polyester resin film which is biaxially oriented and again oriented in a machine direction and a coating layer formed on at least one surface of the film, in which the coating layer contains at least 50% by weight of a water-soluble or water-dispersible polyester resin having a glass transition temperature of at least 20.degree. C., which film has a good adhesion property.
    Type: Grant
    Filed: January 4, 1993
    Date of Patent: February 21, 1995
    Assignee: Diafoil Hoechst Company, Limited
    Inventors: Yuzo Otani, Toshifumi Takisawa, Shin-ichi Kinoshita, Masato Fujita
  • Patent number: 5207878
    Abstract: A finely divided metal-containing compound can be efficiently prepared by irradiating a mixed vapor phase of an organometallic compound in a concentration to exceed a specified lower limit and a reactant gaseous compound with laser beams having an incident energy density to exceed a specified lower limit. When the reactant gaseous compound in the vapor phase is an oxygen-containing compound, e.g., air, the resultant powdery product is an oxide of the metallic element of the organometallic compound. When the reactant gaseous compound in the vapor phase is a halogen-containing compound, e.g., methyl halides, the resultant powdery product is a halide of the metallic element of the organometallic compound.
    Type: Grant
    Filed: July 10, 1991
    Date of Patent: May 4, 1993
    Assignee: Idemitsu Kosan Company Limited
    Inventors: Nobuo Shimo, Masato Fujita
  • Patent number: 4745088
    Abstract: The vapor phase growth on semiconductor wafers is carried out by an apparatus in which a multiplicity of semiconductor wafers are held by a holder so that the semiconductor wafers lie one over another in a vertical direction, and are rotated together with the holder, the holder is placed in a heater disposed in a reaction vessel, a raw material gas supply nozzle and a raw material gas exhaust nozzle are provided within the heater so that the semiconductor wafers are interposed between the gas supply nozzle and the gas discharge nozzle, and the gas supply nozzle and the gas discharge nozzle have gas supply holes and gas discharge holes, respectively, so that a raw material gas can flow on each semiconductor wafer in horizontal directions. When the temperature of the heater is raised by a heating source to heat the semiconductor wafers, the raw material gas is supplied from the gas supply holes to each semiconductor wafer, and thus a uniform layer is grown on each semiconductor wafer from the raw material gas.
    Type: Grant
    Filed: February 19, 1986
    Date of Patent: May 17, 1988
    Assignees: Hitachi, Ltd., Kokusai Elect. Co. Ltd.
    Inventors: Yosuke Inoue, Takaya Suzuki, Masahiro Okamura, Noboru Akiyama, Masato Fujita, Hiroo Tochikubo, Shinya Iida
  • Patent number: 3951728
    Abstract: A method of treating wafers, wherein a plurality of wafers are stacked and immersed in an etchant, to work, i.e., etch, the peripheral surfaces of the wafers. Sliced semiconductor wafers or metallic or ceramic wafers can be chemically chamfered in this manner.
    Type: Grant
    Filed: July 30, 1974
    Date of Patent: April 20, 1976
    Assignee: Hitachi, Ltd.
    Inventors: Etsuo Egashira, Shinichiro Miyoshi, Yukio Takei, Masato Fujita
  • Patent number: D410601
    Type: Grant
    Filed: June 18, 1998
    Date of Patent: June 8, 1999
    Assignee: The Ohtsu Tire & Rubber Co., Ltd.
    Inventors: Takehiko Murata, Masato Fujita