Abstract: There is provided a non-oriented electrical steel sheet in which, in a cross section of a base material in a sheet thickness direction, the number density N2-5 of precipitates with an equivalent circle diameter of 50 to 500 nm present in a range of 2.0 to 5.0 ?m from the surface of the base material in the sheet thickness direction is 0.30 pieces/?m2 or less, and the relationship between the number density N2-5 and the number density N0-2 of precipitates with an equivalent circle diameter of 50 to 500 nm present in a range from the surface of the base material to 2.0 ?m satisfies Formula (1): (N2-5)/(N0-2)?0.5??Formula (1).

Abstract: In leakage detection device, coupling capacitor has a first end connected to a current path of power storage unit connected to load in a state of being insulated from a ground. Voltage output unit generates a periodic voltage that changes periodically, and applies the periodic voltage to a second end of coupling capacitor via impedance element. Voltage output unit measures a voltage at a node between coupling capacitor and impedance element. Leakage determination unit estimates at least one of an upper peak value and a lower peak value at a certain time, calculates a peak-to-peak value between the upper peak value and the lower peak value with virtually aligned time axes, and determines presence or absence of a leakage between a current path of power storage unit and the ground.

Abstract: A wet-laid nonwoven fabric sheet includes at least three types of thermoplastic fibers having different fiber diameters, in which the wet-laid nonwoven fabric sheet has a fiber diameter ratio (R/r) of a fiber diameter R of a fiber having a maximum fiber diameter to a fiber diameter r of a fiber having a minimum fiber diameter of 30?R/r?150, an average pore size of 0.10 ?m to 15 ?m, and a maximum frequency of a pore size distribution of 70% or more.

Abstract: The present invention provides an intra-hoistway measurement system automatically measuring dimensions within an elevator hoistway prior to elevator installation to reduce labor of workers. An intra-hoistway measurement system according to the present invention includes: a reference laser device that is mounted to a structure on a ceiling or in an upper portion of the hoistway for an elevator and emits a laser beam toward a lowermost part; a mobile measuring device that has a plane measuring device to measure horizontal dimensions within the hoistway; and a moving device that is mounted to the structure on the ceiling or in the upper portion of the hoistway and moves the mobile measuring device up and down. The mobile measuring device has a reference laser detection device that detects the laser beam emitted from the reference laser device, and an attitude detection device that detects its own attitude.

Abstract: A plating apparatus 1 includes a substrate holder 10, a first electrode, a second electrode and a voltage applying unit 30. The substrate holder 10 is configured to hold a substrate. The first electrode is electrically connected to the substrate. The second electrode is configured to scan with respect to a front surface of the substrate. The voltage applying unit 30 is configured to apply a voltage between the first electrode and the second electrode. A first discharge opening 23 configured to discharge a plating liquid L1 and a second discharge opening 24 configured to discharge a cleaning liquid L2 are formed in a bottom surface 22a of the second electrode.

Abstract: A plating method includes holding a substrate, supplying a plating liquid L1, supplying a conductive liquid L2 and applying a voltage. In the holding of the substrate, the substrate is held. In the supplying of the plating liquid L1, the plating liquid L1 is supplied onto the held substrate. In the supplying of the conductive liquid L2, the conductive liquid L2, which is different from the plating liquid L1 supplied on the substrate, is supplied onto the plating liquid L1. In the applying of the voltage, the voltage is applied between the substrate and the conductive liquid L2.

Abstract: An electrolytic processing jig configured to perform an electrolytic processing on a processing target substrate includes a base body having a flat plate shape; an electrode provided at the base body; three or more terminals provided at the base body, each having elasticity and configured to be brought into contact with a peripheral portion of the processing target substrate; and a detecting unit configured to electrically detect a contact of at least one of the terminals with the processing target substrate.

Abstract: An electrolytic processing jig configured to perform an electrolytic processing on a processing target substrate by using a processing liquid supplied to the processing target substrate includes a base body having a flat plate shape; and a direct electrode provided on a front surface of the base body and configured to be brought into contact with the processing liquid to apply a voltage between the processing target substrate and the direct electrode. An irregularity pattern is formed on a front surface of the electrolytic processing jig at a processing target substrate side.

Abstract: An electrolytic treatment apparatus 1 (1A) configured to perform an electrolytic treatment on a target substrate includes a substrate holder 10 and an electrolytic processor 20. The substrate holder 10 includes an insulating holding body 11 configured to hold the target substrate and an indirect negative electrode 12 disposed within the holding body 11. A negative voltage is applied to the indirect negative electrode 12. The electrolytic processor 20 is disposed to face the substrate holder 10 and configured to apply a voltage to the target substrate and an electrolyte in contact with the target substrate.

Abstract: An electrolytic treatment apparatus 1 (1A) configured to perform an electrolytic treatment on a target substrate includes a substrate holder 10 and an electrolytic processor 20. The substrate holder 10 includes an insulating holding body 11 configured to hold the target substrate and an indirect negative electrode 12 disposed within the holding body 11. A negative voltage is applied to the indirect negative electrode 12. The electrolytic processor 20 is disposed to face the substrate holder 10 and configured to apply a voltage to the target substrate and an electrolyte in contact with the target substrate.

Abstract: A manufacturing apparatus for a semiconductor device includes a substrate holding unit configured to hold a substrate; a processing liquid supply unit configured to supply a processing liquid onto the substrate held by the substrate holding unit; an electrolytic processing unit disposed to face the substrate holding unit and configured to perform an electrolytic processing on the substrate held by the substrate holding unit; and a terminal configured to apply a voltage to the substrate. The electrolytic processing unit includes a direct electrode configured to be brought into contact with the processing liquid supplied onto the substrate to apply a voltage with respect to the substrate; and an indirect electrode configured to form an electric field in the processing liquid supplied onto the substrate.

Abstract: A substrate processing method is provided for performing a plating processing on a substrate having, on a surface thereof, an impurity-doped polysilicon film containing a high concentration of impurities. The substrate processing method includes forming a catalyst layer by supplying, onto the substrate, an alkaline catalyst solution containing a complex of a palladium ion and a monocyclic 5- or 6-membered heterocyclic compound having one or two nitrogen atoms as a heteroatom; and forming a plating layer through electroless plating by supplying a plating liquid onto the substrate after the forming of the catalyst layer.

Abstract: An electrolytic treatment apparatus of the present disclosure includes a common electrode and a counter electrode that are disposed such that the treatment liquid is interposed therebetween. A first wiring and a second wiring are connected to the common electrode, a capacitor is provided in the first wiring. Copper ions are moved to the counter electrode side by forming an electric field in the treatment liquid when the capacitor is charged without connecting the first wiring and the second wiring to each other, and the copper ions moved to the counter electrode side are reduced by applying a voltage between the common electrode and the counter electrode when the capacitor is discharged by connecting the first wiring and the second wiring to each other.

Abstract: An electrolytic processing jig configured to perform an electrolytic processing on a processing target substrate by using a processing liquid supplied to the processing target substrate includes a base body having a flat plate shape; and a direct electrode provided on a front surface of the base body and configured to be brought into contact with the processing liquid to apply a voltage between the processing target substrate and the direct electrode. An irregularity pattern is formed on a front surface of the electrolytic processing jig at a processing target substrate side.

Abstract: An electrolytic processing jig configured to perform an electrolytic processing on a processing target substrate includes a base body having a flat plate shape; an electrode provided at the base body; three or more terminals provided at the base body, each having elasticity and configured to be brought into contact with a peripheral portion of the processing target substrate; and a detecting unit configured to electrically detect a contact of at least one of the terminals with the processing target substrate.

Abstract: An adhesion layer formed of a thin film can be formed on a surface of a substrate. An adhesion layer forming method of forming the adhesion layer on the substrate includes supplying a coupling agent onto the substrate 2 while rotating the substrate 2. The substrate 2 is rotated at a low speed equal to or less than 300 rpm and the coupling agent diluted with IPA is supplied onto the substrate 2.

Abstract: A manufacturing apparatus for a semiconductor device includes a substrate holding unit configured to hold a substrate; a processing liquid supply unit configured to supply a processing liquid onto the substrate held by the substrate holding unit; an electrolytic processing unit disposed to face the substrate holding unit and configured to perform an electrolytic processing on the substrate held by the substrate holding unit; and a terminal configured to apply a voltage to the substrate. The electrolytic processing unit includes a direct electrode configured to be brought into contact with the processing liquid supplied onto the substrate to apply a voltage with respect to the substrate; and an indirect electrode configured to form an electric field in the processing liquid supplied onto the substrate.

Abstract: A substrate processing method is provided for performing a plating processing on a substrate having, on a surface thereof, an impurity-doped polysilicon film containing a high concentration of impurities. The substrate processing method includes forming a catalyst layer by supplying, onto the substrate, an alkaline catalyst solution containing a complex of a palladium ion and a monocyclic 5- or 6-membered heterocyclic compound having one or two nitrogen atoms as a heteroatom; and forming a plating layer through electroless plating by supplying a plating liquid onto the substrate after the forming of the catalyst layer.

Abstract: A substrate processing apparatus can allow palladium atoms to be coupled to a surface of a substrate without performing a silane coupling processing with a silane coupling agent on the substrate. In a substrate processing apparatus 1, a plating unit 4 includes a catalyst solution supply unit 43a and a plating liquid supply unit 45. The catalyst solution supply unit 43a forms a catalyst layer 91 on a surface of a substrate W1 by supplying, onto the substrate W1, a catalyst solution L1 containing a complex of a palladium ion and a monocyclic 5- or 6-membered aromatic or aliphatic heterocyclic compound having one or two nitrogen atoms as a heteroatom. After the catalyst solution L1 is supplied, the plating liquid supply unit 45 forms an electroless plating layer 92 on the catalyst layer 91 formed on a substrate W2 by supplying a plating liquid M1 onto the substrate W2.

Abstract: In a substrate processing apparatus 1, a plating unit 4 includes a catalyst solution supply unit 43a and a plating liquid supply unit 45. By supplying, from the catalyst solution supply unit 43a onto a substrate W1 having an impurity-doped polysilicon film 90 containing a high concentration of impurities on a surface thereof, an alkaline catalyst solution L1 containing a complex of a palladium ion and a monocyclic 5- or 6-membered aromatic or aliphatic heterocyclic compound having one or two nitrogen atoms as a heteroatom, a catalyst layer 91 is formed on a surface of the impurity-doped polysilicon film 90 of the substrate W1. After the catalyst solution L1 is supplied, an electroless plating layer 92 is formed on the catalyst layer 91 formed on a substrate W2 by supplying a plating liquid M1 from the plating liquid supply unit 45 onto the substrate W2.