Abstract: A fiber dispersion liquid includes ultrafine fibers having a fiber diameter of 100 to 5000 nm dispersed in an aqueous medium, wherein the fiber dispersion liquid has a solid content concentration of 0.01% to 10% by weight and a dispersion index of 20 or less, in which the dispersion index is measured by preparing a fiber dispersion liquid such that a solid content concentration is 0.01% by weight with respect to a total amount of the fiber dispersion liquid, an image of the obtained fiber dispersion liquid at a magnification of 50 times is captured with a microscope under transmitted illumination, the image is converted into a monochrome image by using an image processing software, then a luminance histogram is formed with 256 grades, and a standard deviation obtained from the luminance histogram is used as the dispersion index.

Abstract: A money handling apparatus includes a banknote handling assembly, a coin handling assembly, and a first operation surface having a banknote inlet portion, a banknote outlet portion, a coin inlet portion, and a coin outlet portion and facing a front direction in a front-back direction of the money handling apparatus. The banknote inlet portion and the coin inlet portion are aligned and the banknote outlet portion and the coin outlet portion are aligned in a right-left direction of the money handling apparatus, which is perpendicular to the front-back direction. The banknote inlet portion and the banknote outlet portion overlap and the coin inlet portion and the coin outlet portion overlap in the up-down direction of the money handling apparatus, which is perpendicular to the right-left direction and perpendicular to the front-back direction.

Abstract: An automatic transaction apparatus includes: a money handling assembly configured to handle money including banknotes and coins; a first display above the money handling assembly, the first display facing a first direction and the first display to display a first screen for input of a transaction instruction; a second display above the money handling assembly, the second display facing a second direction which is opposite the first direction, and the second display to display a second screen for input of a transaction instruction; and an operation device that faces the second direction, the operation device on which an operation for performing electronic settlement of a monetary amount corresponding to a transaction input to the second display is performed.

Abstract: An ultrafine fiber has a fiber diameter (D) of 100 to 5000 nm, a ratio (L/D) of a fiber length (L) to the fiber diameter (D) of 3000 to 6000, and a carboxyl terminal group amount of 40 eq/ton or more. At least a part of a surface layer of the ultrafine fiber may be formed of polyester.

Abstract: A controller outputs a control signal to control a plating liquid supply and a power applying device to perform a first electrolytic plating processing by applying power to a processing surface in a state that a plating liquid is in contact with a first facing range, which is a partial range of an electrode facing surface, and the controller also outputs, after the first electrolytic plating processing is performed, a control signal to control the plating liquid supply and the power applying device to perform a second electrolytic plating processing by applying the power to the processing surface in a state that the plating liquid is in contact with a second facing range of the electrode facing surface, the second facing range being wider than the first facing range.

Abstract: A plating apparatus 1 includes a substrate holder 10, a first electrode, a second electrode and a voltage applying unit 30. The substrate holder 10 is configured to hold a substrate. The first electrode is electrically connected to the substrate. The second electrode is configured to scan with respect to a front surface of the substrate. The voltage applying unit 30 is configured to apply a voltage between the first electrode and the second electrode. A first discharge opening 23 configured to discharge a plating liquid L1 and a second discharge opening 24 configured to discharge a cleaning liquid L2 are formed in a bottom surface 22a of the second electrode.

Abstract: A plating method includes holding a substrate, supplying a plating liquid L1, supplying a conductive liquid L2 and applying a voltage. In the holding of the substrate, the substrate is held. In the supplying of the plating liquid L1, the plating liquid L1 is supplied onto the held substrate. In the supplying of the conductive liquid L2, the conductive liquid L2, which is different from the plating liquid L1 supplied on the substrate, is supplied onto the plating liquid L1. In the applying of the voltage, the voltage is applied between the substrate and the conductive liquid L2.

Abstract: An electrolytic processing jig configured to perform an electrolytic processing on a processing target substrate includes a base body having a flat plate shape; an electrode provided at the base body; three or more terminals provided at the base body, each having elasticity and configured to be brought into contact with a peripheral portion of the processing target substrate; and a detecting unit configured to electrically detect a contact of at least one of the terminals with the processing target substrate.

Abstract: An electrolytic processing jig configured to perform an electrolytic processing on a processing target substrate by using a processing liquid supplied to the processing target substrate includes a base body having a flat plate shape; and a direct electrode provided on a front surface of the base body and configured to be brought into contact with the processing liquid to apply a voltage between the processing target substrate and the direct electrode. An irregularity pattern is formed on a front surface of the electrolytic processing jig at a processing target substrate side.

Abstract: An electrolytic treatment apparatus 1 (1A) configured to perform an electrolytic treatment on a target substrate includes a substrate holder 10 and an electrolytic processor 20. The substrate holder 10 includes an insulating holding body 11 configured to hold the target substrate and an indirect negative electrode 12 disposed within the holding body 11. A negative voltage is applied to the indirect negative electrode 12. The electrolytic processor 20 is disposed to face the substrate holder 10 and configured to apply a voltage to the target substrate and an electrolyte in contact with the target substrate.

Abstract: An electrolytic treatment apparatus 1 (1A) configured to perform an electrolytic treatment on a target substrate includes a substrate holder 10 and an electrolytic processor 20. The substrate holder 10 includes an insulating holding body 11 configured to hold the target substrate and an indirect negative electrode 12 disposed within the holding body 11. A negative voltage is applied to the indirect negative electrode 12. The electrolytic processor 20 is disposed to face the substrate holder 10 and configured to apply a voltage to the target substrate and an electrolyte in contact with the target substrate.

Abstract: A manufacturing apparatus for a semiconductor device includes a substrate holding unit configured to hold a substrate; a processing liquid supply unit configured to supply a processing liquid onto the substrate held by the substrate holding unit; an electrolytic processing unit disposed to face the substrate holding unit and configured to perform an electrolytic processing on the substrate held by the substrate holding unit; and a terminal configured to apply a voltage to the substrate. The electrolytic processing unit includes a direct electrode configured to be brought into contact with the processing liquid supplied onto the substrate to apply a voltage with respect to the substrate; and an indirect electrode configured to form an electric field in the processing liquid supplied onto the substrate.

Abstract: A substrate processing method is provided for performing a plating processing on a substrate having, on a surface thereof, an impurity-doped polysilicon film containing a high concentration of impurities. The substrate processing method includes forming a catalyst layer by supplying, onto the substrate, an alkaline catalyst solution containing a complex of a palladium ion and a monocyclic 5- or 6-membered heterocyclic compound having one or two nitrogen atoms as a heteroatom; and forming a plating layer through electroless plating by supplying a plating liquid onto the substrate after the forming of the catalyst layer.

Abstract: An electrolytic treatment apparatus of the present disclosure includes a common electrode and a counter electrode that are disposed such that the treatment liquid is interposed therebetween. A first wiring and a second wiring are connected to the common electrode, a capacitor is provided in the first wiring. Copper ions are moved to the counter electrode side by forming an electric field in the treatment liquid when the capacitor is charged without connecting the first wiring and the second wiring to each other, and the copper ions moved to the counter electrode side are reduced by applying a voltage between the common electrode and the counter electrode when the capacitor is discharged by connecting the first wiring and the second wiring to each other.

Abstract: An electrolytic processing jig configured to perform an electrolytic processing on a processing target substrate by using a processing liquid supplied to the processing target substrate includes a base body having a flat plate shape; and a direct electrode provided on a front surface of the base body and configured to be brought into contact with the processing liquid to apply a voltage between the processing target substrate and the direct electrode. An irregularity pattern is formed on a front surface of the electrolytic processing jig at a processing target substrate side.

Abstract: An electrolytic processing jig configured to perform an electrolytic processing on a processing target substrate includes a base body having a flat plate shape; an electrode provided at the base body; three or more terminals provided at the base body, each having elasticity and configured to be brought into contact with a peripheral portion of the processing target substrate; and a detecting unit configured to electrically detect a contact of at least one of the terminals with the processing target substrate.

Abstract: An adhesion layer formed of a thin film can be formed on a surface of a substrate. An adhesion layer forming method of forming the adhesion layer on the substrate includes supplying a coupling agent onto the substrate 2 while rotating the substrate 2. The substrate 2 is rotated at a low speed equal to or less than 300 rpm and the coupling agent diluted with IPA is supplied onto the substrate 2.

Abstract: A manufacturing apparatus for a semiconductor device includes a substrate holding unit configured to hold a substrate; a processing liquid supply unit configured to supply a processing liquid onto the substrate held by the substrate holding unit; an electrolytic processing unit disposed to face the substrate holding unit and configured to perform an electrolytic processing on the substrate held by the substrate holding unit; and a terminal configured to apply a voltage to the substrate. The electrolytic processing unit includes a direct electrode configured to be brought into contact with the processing liquid supplied onto the substrate to apply a voltage with respect to the substrate; and an indirect electrode configured to form an electric field in the processing liquid supplied onto the substrate.

Abstract: A substrate processing method is provided for performing a plating processing on a substrate having, on a surface thereof, an impurity-doped polysilicon film containing a high concentration of impurities. The substrate processing method includes forming a catalyst layer by supplying, onto the substrate, an alkaline catalyst solution containing a complex of a palladium ion and a monocyclic 5- or 6-membered heterocyclic compound having one or two nitrogen atoms as a heteroatom; and forming a plating layer through electroless plating by supplying a plating liquid onto the substrate after the forming of the catalyst layer.

Abstract: A substrate processing apparatus can allow palladium atoms to be coupled to a surface of a substrate without performing a silane coupling processing with a silane coupling agent on the substrate. In a substrate processing apparatus 1, a plating unit 4 includes a catalyst solution supply unit 43a and a plating liquid supply unit 45. The catalyst solution supply unit 43a forms a catalyst layer 91 on a surface of a substrate W1 by supplying, onto the substrate W1, a catalyst solution L1 containing a complex of a palladium ion and a monocyclic 5- or 6-membered aromatic or aliphatic heterocyclic compound having one or two nitrogen atoms as a heteroatom. After the catalyst solution L1 is supplied, the plating liquid supply unit 45 forms an electroless plating layer 92 on the catalyst layer 91 formed on a substrate W2 by supplying a plating liquid M1 onto the substrate W2.