Abstract: In a method of an embodiment, radicals, which are generated from a processing gas, is adsorbed to a layer to be etched without applying a high-frequency bias to a lower electrode, in an adsorption step. In the subsequent etching step, ions, which are generated from the processing gas, are drawn into the layer to be etched by applying a high-frequency bias to the lower electrode. The adsorption step and the etching step are alternately repeated. In the adsorption step, a density of radicals is 200 or greater times a density of ions. In the etching step, RF energy having a power density of 0.07 W/cm2 or less is supplied to the lower electrode or a high-frequency bias having a power density of 0.14 W/cm2 or less is supplied to the lower electrode for a period of 0.5 seconds or less.

Abstract: A plasma processing apparatus includes a dielectric member having communication holes through which an internal space communicates with a processing space; a first electrode and a second electrode; a first gas supply device which supplies a first processing gas; a first high frequency power supply which supplies a first high frequency power to at least one of the electrodes to generate a first plasma of the first processing gas; a depressurizing device which introduces the first processing gas and radicals in the first plasma; a second high frequency power supply which supplies a second high frequency power to generate a second plasma of the first processing gas and to attract ions; and a control unit which adjusts, by controlling a total amount of the first high frequency powers, the radical amount in the second plasma and adjusts, by controlling a ratio therebetween, the ion amount therein.

Abstract: An electrode assembly of a plasma processing apparatus that enables damage to an electrode plate to be prevented, and enables an increase in the number of parts to be prevented, so that the ability to carry out maintenance can be easily maintained. An upper electrode assembly has an upper electrode plate, a cooling plate (C/P) and a spacer interposed between the upper electrode plate and the C/P. The upper electrode plate has therein electrode plate gas-passing holes that penetrate through the upper electrode plate. The C/P has therein C/P gas-passing holes that penetrate through the C/P. The spacer has therein spacer gas-passing holes that penetrate through the spacer. The electrode plate gas-passing holes, the C/P gas-passing holes and the spacer gas-passing holes are not disposed collinearly.

Abstract: Disclosed is a substrate processing apparatus capable of suppressing generation of plasma in the space between a moving electrode and an end wall at one side of a cylindrical chamber. The substrate processing apparatus includes a cylindrical chamber to receive a wafer, a shower head movable along a central axis of the chamber inside the chamber, a susceptor opposing the shower head in the chamber, and a flexible bellows connecting the shower head to a cover of the chamber, wherein a high frequency power is applied to a processing space presented between the shower head and the susceptor, processing gas is introduced into the processing space, the shower head and the side wall of the chamber are non-contact to each other, and a bypass member is installed electrically connecting the shower head and the cover or the side wall of the chamber.

Abstract: A plasma processing apparatus includes a dielectric member having communication holes through which an internal space communicates with a processing space; a first electrode and a second electrode; a first gas supply device which supplies a first processing gas; a first high frequency power supply which supplies a first high frequency power to at least one of the electrodes to generate a first plasma of the first processing gas; a depressurizing device which introduces the first processing gas and radicals in the first plasma; a second high frequency power supply which supplies a second high frequency power to generate a second plasma of the first processing gas and to attract ions; and a control unit which adjusts, by controlling a total amount of the first high frequency powers, the radical amount in the second plasma and adjusts, by controlling a ratio therebetween, the ion amount therein.

Abstract: A streaming system includes an authoring unit, a stream server and a client terminal. The authoring unit generates a file composed of encrypted contents data and the ancillary information at least containing the packetizing control information for generating an RTP packet, a non-encrypted codec dependent header made up of the information pertinent to encoded contents data, and the encryption information for decrypting the encrypted contents data form packet to packet. The streaming server packetizes the encrypted contents data along with at least the codec dependent header and distributes the resulting data as a stream. The client terminal refers to the codec dependent header of the received packet, re-assembles the packet, and decrypts the encrypted contents data of the re-assembled packet to generate contents data.

Abstract: A streaming system includes an authoring unit (2), a stream server (3) and a client terminal (5). The authoring unit generates a file composed of encrypted contents data and the ancillary information at least containing the packetizing control information for generating an RTP packet, a non-encrypted codec dependent header made up of the information pertinent to encoded contents data, and the encryption information for decrypting the encrypted contents data form packet to packet. The streaming server packetizes the encrypted contents data along with at least the codec dependent header and distributes the resulting data as a stream. The client terminal refers to the codec dependent header of the received packet, re-assembles the packet, and decrypts the encrypted contents data of the re-assembled packet to generate contents data.

Abstract: There is provided a plasma processing apparatus capable of easily exhausting a processing gas introduced in a space above a vertically movable upper electrode. The plasma processing apparatus includes a vertically movable upper electrode 120 installed at a ceiling wall 105 of a processing chamber 102 so as to face a lower electrode 111 and having a multiple number of discharge holes 123 for introducing the processing gas; a shield sidewall 310 configured to surround the electrodes and a processing space between the electrodes; an inner gas exhaust path 330 formed at the inside of the shield sidewall and configured to exhaust the atmosphere in the processing space; and an outer gas exhaust path 138 installed at the outside of the shield sidewall and configured to exhaust the processing gas introduced into a space between the upper electrode and the ceiling wall.

Abstract: A streaming system includes an authoring unit (2), a stream server (3) and a client terminal (5). The authoring unit generates a file composed of encrypted contents data and the ancillary information at least containing the packetizing control information for generating an RTP packet, a non-encrypted codec dependent header made up of the information pertinent to encoded contents data, and the encryption information for decrypting the encrypted contents data form packet to packet. The streaming server packetizes the encrypted contents data along with at least the codec dependent header and distributes the resulting data as a stream. The client terminal refers to the codec dependent header of the received packet, re-assembles the packet, and decrypts the encrypted contents data of the re-assembled packet to generate contents data.

Abstract: A streaming system includes an authoring unit (2), a stream server (3) and a client terminal (5). The authoring unit generates a file composed of encrypted contents data and the ancillary information at least containing the packetizing control information for generating an RTP packet, a non-encrypted codec dependent header made up of the information pertinent to encoded contents data, and the encryption information for decrypting the encrypted contents data form packet to packet. The streaming server packetizes the encrypted contents data along with at least the codec dependent header and distributes the resulting data as a stream. The client terminal refers to the codec dependent header of the received packet, re-assembles the packet, and decrypts the encrypted contents data of the re-assembled packet to generate contents data.

Abstract: A streaming system includes an authoring unit (2), a stream server (3) and a client terminal (5). The authoring unit generates a file composed of encrypted contents data and the ancillary information at least containing the packetizing control information for generating an RTP packet, a non-encrypted codec dependent header made up of the information pertinent to encoded contents data, and the encryption information for decrypting the encrypted contents data form packet to packet. The streaming server packetizes the encrypted contents data along with at least the codec dependent header and distributes the resulting data as a stream. The client terminal refers to the codec dependent header of the received packet, re-assembles the packet, and decrypts the encrypted contents data of the re-assembled packet to generate contents data.

Abstract: An electrode assembly of a plasma processing apparatus that enables damage to an electrode plate to be prevented, and enables an increase in the number of parts to be prevented, so that the ability to carry out maintenance can be easily maintained. An upper electrode assembly has an upper electrode plate, a cooling plate (C/P) and a spacer interposed between the upper electrode plate and the C/P. The upper electrode plate has therein electrode plate gas-passing holes that penetrate through the upper electrode plate. The C/P has therein C/P gas-passing holes that penetrate through the C/P. The spacer has therein spacer gas-passing holes that penetrate through the spacer. The electrode plate gas-passing holes, the C/P gas-passing holes and the spacer gas-passing holes are not disposed collinearly.

Abstract: In a plasma etching apparatus for performing a plasma etching on a surface of a substrate mounted on a susceptor in a processing vessel, a focus ring is installed to surround the substrate and has a first region at an inner side on a surface thereof, in which an average surface roughness is small such that a reaction product produced during an etching processing is not captured to be deposited, and a second region at an outer side from the first region, in which an average surface roughness is large such that a reaction product produced during the etching process is captured to be deposited. A boundary between the first and the second region is a part where an etching amount is relatively significantly changed compared to other parts while the focus ring is equipped in the plasma etching apparatus and the plasma etching is performed on the substrate.

Abstract: A streaming system includes an authoring unit (2), a stream server (3) and a client terminal (5). The authoring unit generates a file composed of encrypted contents data and the ancillary information at least containing the packetizing control information for generating an RTP packet, a non-encrypted codec dependent header made up of the information pertinent to encoded contents data, and the encryption information for decrypting the encrypted contents data form packet to packet. The streaming server packetizes the encrypted contents data along with at least the codec dependent header and distributes the resulting data as a stream. The client terminal refers to the codec dependent header of the received packet, re-assembles the packet, and decrypts the encrypted contents data of the re-assembled packet to generate contents data.

Abstract: There is provided a plasma processing apparatus capable of easily exhausting a processing gas introduced in a space above a vertically movable upper electrode. The plasma processing apparatus includes a vertically movable upper electrode 120 installed at a ceiling wall 105 of a processing chamber 102 so as to face a lower electrode 111 and having a multiple number of discharge holes 123 for introducing the processing gas; a shield sidewall 310 configured to surround the electrodes and a processing space between the electrodes; an inner gas exhaust path 330 formed at the inside of the shield sidewall and configured to exhaust the atmosphere in the processing space; and an outer gas exhaust path 138 installed at the outside of the shield sidewall and configured to exhaust the processing gas introduced into a space between the upper electrode and the ceiling wall.

Abstract: Disclosed is a substrate processing apparatus capable of suppressing generation of plasma in the space between a moving electrode and an end wall at one side of a cylindrical chamber. The substrate processing apparatus includes a cylindrical chamber to receive a wafer, a shower head movable along a central axis of the chamber inside the chamber, a susceptor opposing the shower head in the chamber, and a flexible bellows connecting the shower head to a cover of the chamber, wherein a high frequency power is applied to a processing space presented between the shower head and the susceptor, processing gas is introduced into the processing space, the shower head and the side wall of the chamber are non-contact to each other, and a bypass member is installed electrically connecting the shower head and the cover or the side wall of the chamber.

Abstract: In a plasma etching apparatus for performing a plasma etching on a surface of a substrate mounted on a susceptor in a processing vessel, a focus ring is installed to surround the substrate and has a first region at an inner side on a surface thereof, in which an average surface roughness is small such that a reaction product produced during an etching processing is not captured to be deposited, and a second region at an outer side from the first region, in which an average surface roughness is large such that a reaction product produced during the etching process is captured to be deposited. A boundary between the first and the second region is a part where an etching amount is relatively significantly changed compared to other parts while the focus ring is equipped in the plasma etching apparatus and the plasma etching is performed on the substrate.

Abstract: In a plasma etching apparatus for performing a plasma etching on a surface of a substrate mounted on a susceptor in a processing vessel, a focus ring is installed to surround the substrate and has a first region at an inner side on a surface thereof, in which an average surface roughness is small such that a reaction product produced during an etching processing is not captured to be deposited, and a second region at an outer side from the first region, in which an average surface roughness is large such that a reaction product produced during the etching process is captured to be deposited. A boundary between the first and the second region is a part where an etching amount is relatively significantly changed compared to other parts while the focus ring is equipped in the plasma etching apparatus and the plasma etching is performed on the substrate.

Abstract: This invention relates to an information-processing apparatus for transmitting streaming data through a network, including: an addition element for adding information used for carrying out processing on streaming data to the streaming data; a storage element for storing the streaming data and the information added to the streaming data by the addition element; and a transmission element for transmitting the streaming data which is stored by the storage element and which includes the information.

Abstract: An electrode assembly of a plasma processing apparatus that enables damage to an electrode plate to be prevented, and enables an increase in the number of parts to be prevented so that a worsening of the ability to carry out maintenance can be prevented. An upper electrode assembly has an upper electrode plate 32, a cooling plate (C/P) 34 and a spacer 37 interposed between the upper electrode plate 32 and the C/P 34. The upper electrode plate 32 has therein electrode plate gas-passing holes 32a that penetrate through the upper electrode plate 32. The C/P 34 has therein C/P gas-passing holes 34a that penetrate through the C/P 34. The spacer 37 has therein spacer gas-passing holes 37a that penetrate through the spacer 37. The electrode plate gas-passing holes 32a, C/P gas-passing holes 34a and the spacer gas-passing holes 37a are not disposed collinearly.