Abstract: A vehicle control device includes a plurality of IC units, while maintaining the operational reliability. The vehicle control device includes an IC unit for performing image processing on outputs from cameras; an IC unit for performing recognition processing of an external environment of the vehicle; and an IC unit for performing judgment processing for cruise control of the vehicle. A control flow is provided so as to allow the IC unit to transmit a control signal to the IC units and. The control flow is provided separately from a data flow configured to transmit the output from the cameras, the image data, and the external environment data.

Abstract: A plurality of first cameras are provided in a vehicle so as to surround the vehicle. A plurality of second cameras are provided in the vehicle so as to surround the vehicle. A control unit performs a first operation of outputting a control signal for cruise control of the vehicle based on both outputs from the plurality of the first cameras and outputs from the plurality of the second cameras, a second operation of outputting the control signal based on the outputs from the plurality of the first cameras, and a third operation of outputting the control signal based on the outputs from the plurality of the second cameras.

Abstract: A vehicle control device includes: a signal processing IC unit that outputs image processing data; a recognition processing IC unit that performs recognition processing of the external environment of a vehicle to output external environment data obtained through the recognition processing; a judgment processing IC unit that performs judgment processing for cruise control of the vehicle; a power management unit capable of controlling an on or off state of a recognition function of the external environment of the vehicle in the recognition processing IC unit according to the conditions of the vehicle; and a bypass path for enabling data communications from the signal processing IC unit to the judgment processing IC unit without performing the recognition processing of the external environment of the vehicle by the recognition processing IC unit.

Abstract: Provided is a laminated ceramic capacitor which can suppress degradation of the insulation resistance due to the addition of vanadium. Second insulating layers are stacked on both sides in the stacking direction of a first insulating layer group, which has first insulating layers stacked over one another, and internal electrodes are placed on principal surfaces of the first insulating layers. At least one internal electrode is placed between the first and second insulating layers. Both contain, as their main constituent, a perovskite-type compound represented by the formula “ABO3” wherein “A” denotes at least one of Ba, Sr, and Ca, “B” denotes at least one of Ti, Zr, and Hf. V is added to only the first insulating layers.

Abstract: Provided is a natural leather having a novel coating layer which feels leathery. The coating film retains material properties such as strength and wearing resistance. When the user directly touches the natural leather, the coating layer present on the surface of the natural leather gives slick characteristics of natural leathers and smoothness. The natural leather has a coating film formed on a surface thereof, the coating film including: a color coat layer formed from a mixture of a hard component (10% modulus is more than 2.3 but no more than 3.0) and a soft component (10% modulus is more than 0.0 but no more than 1.0) of a two-component polyurethane resin; and a topcoat layer formed from a mixture of a medium component (resin having a 10% modulus of more than 1.0 but no more than 2.3) and a soft component (resin having a 10% modulus of more than 0.0 but no more than 1.0) of a two-component polyurethane resin.

Abstract: A hood frame is provided with a center bead, front radiating beads and rear radiating beads to ensure that the front hood bends in the shape of inverted letter-V under a frontal crash load. Further, the beads provide the hood frame with a stiffness (including an out-of-plane stiffness) which is required of the front hood while the downward deformation of the hood frame under a downward load can be controlled and the HIC level can be set at an appropriate level.

Abstract: Provided are a semiconductor device making it possible to form an element region having a dimension close to a designed dimension, restrain a phenomenon similar to gate-induced drain leakage, and further restrain compressive stress to be applied to the element region by oxidation of a conductive film; and a method for manufacturing the semiconductor device. Trenches are made in a main surface of a semiconductor substrate. By oxidizing the wall surface of each of the trenches, a first oxide film is formed on the wall surface. An embedded conductive film is formed to be embedded into the trench. The embedded conductive film is oxidized in an atmosphere containing an active oxidizing species, thereby forming a second oxide film. A third oxide film is formed on the second oxide film by CVD or coating method.

Abstract: A hood frame is provided with a center bead, front radiating beads and rear radiating beads to ensure that the front hood bends in the shape of inverted letter-V under a frontal crash load. Further, the beads provide the hood frame with a stiffness (including an out-of-plane stiffness) which is required of the front hood while the downward deformation of the hood frame under a downward load can be controlled and the HIC level can be set at an appropriate level.

Abstract: Provided is an allergen reduction-processing agent capable of giving an allergen reducing effect to a fibrous product while restraining whitening, and chalk marks. As chemical agents having an allergen-restraining effect, a zirconium based compound and a sulfonyl group-containing aromatic compound are used. An aqueous dispersion containing these components is used as an allergen reduction-processing agent for processing a fibrous product. The ratio by weight of the zirconium based compound to the aromatic compound is preferably 1 to 6:0.05 to 1.5.

Abstract: Provided is an allergen reduction-processing agent capable of giving an allergen reducing effect to a fibrous product while restraining whitening, and chalk marks. As chemical agents having an allergen-restraining effect, a zirconium based compound and a sulfonyl group-containing aromatic compound are used. An aqueous dispersion containing these components is used as an allergen reduction-processing agent for processing a fibrous product. The ratio by weight of the zirconium based compound to the aromatic compound is preferably 1 to 6:0.05 to 1.5.

Abstract: To manufacture in high productivity a semiconductor device capable of securely achieving element isolation by a trench-type element isolation and capable of effectively preventing potentials of adjacent elements from affecting other nodes, a method of manufacturing the semiconductor device includes: a step of forming a first layer on a substrate; a step of forming a trench by etching the first layer and the substrate; a step of thermally oxidizing an inner wall of the trench; a step of depositing a first conductive film having a film thickness equal to or larger than one half of the trench width of the trench on the substrate including the trench; a step of removing a first conductive film from the first layer by a CMP method and keeping the first conductive film left in only the trench; a step of anisotropically etching the first conductive film within the trench to adjust the height of the conductive film to become lower than the height of the surface of the substrate; a step of depositing an insulating fil

Abstract: Provided is a natural leather having a novel coating layer which feels leathery. The coating film retains material properties such as strength and wearing resistance. When the user directly touches the natural leather, the coating layer present on the surface of the natural leather gives slick characteristics of natural leathers and smoothness. The natural leather has a coating film formed on a surface thereof, the coating film including: a color coat layer formed from a mixture of a hard component (10% modulus is more than 2.3 but no more than 3.0) and a soft component (10% modulus is more than 0.0 but no more than 1.0) of a two-component polyurethane resin; and a topcoat layer formed from a mixture of a medium component (resin having a 10% modulus of more than 1.0 but no more than 2.3) and a soft component (resin having a 10% modulus of more than 0.0 but no more than 1.0) of a two-component polyurethane resin.

Abstract: To manufacture in high productivity a semiconductor device capable of securely achieving element isolation by a trench-type element isolation and capable of effectively preventing potentials of adjacent elements from affecting other nodes, a method of manufacturing the semiconductor device includes: a step of forming a first layer on a substrate; a step of forming a trench by etching the first layer and the substrate; a step of thermally oxidizing an inner wall of the trench; a step of depositing a first conductive film having a film thickness equal to or larger than one half of the trench width of the trench on the substrate including the trench; a step of removing a first conductive film from the first layer by a CMP method and keeping the first conductive film left in only the trench; a step of anisotropically etching the first conductive film within the trench to adjust the height of the conductive film to become lower than the height of the surface of the substrate; a step of depositing an insulating fil

Abstract: In the process of manufacturing a semiconductor device, a first layer is formed on a substrate, and the first layer and the substrate are etched to form a trench. The inner wall of the trench is thermally oxidized. On the substrate, including inside the trench, is deposited a first conductive film having a thickness equal to or larger than one half of the width of the trench. The first conductive film on the first layer is removed by chemical mechanical polishing such that the first conductive film remains in only the trench. The height of the first conductive film in the trench is adjusted to be lower than a surface of the substrate by anisotropically etching the first conductive film. An insulating film is deposited on the substrate by chemical vapor deposition to cover an upper surface of the first conductive film in the trench. The insulating film is flattened by chemical mechanical polishing, and the first layer is removed.

Abstract: Provided are a semiconductor device making it possible to form an element region having a dimension close to a designed dimension, restrain a phenomenon similar to gate-induced drain leakage, and further restrain compressive stress to be applied to the element region by oxidation of a conductive film; and a method for manufacturing the semiconductor device. Trenches are made in a main surface of a semiconductor substrate. By oxidizing the wall surface of each of the trenches, a first oxide film is formed on the wall surface. An embedded conductive film is formed to be embedded into the trench. The embedded conductive film is oxidized in an atmosphere containing an active oxidizing species, thereby forming a second oxide film. A third oxide film is formed on the second oxide film by CVD or coating method.

Abstract: The present disclosure is directed to a roof lining for a vehicle and a manufacturing method thereof, and in particular, to the roof lining for a vehicle using a composite material having basalt fibers mixed into a thermoplastic resin as a substrate. The resulting roof lining can be lightweight, have enhanced sound absorbency and increased heat insulating properties. Due to the use of basalt fibers, which do not coat incinerator walls like glass fibers do, the roof lining is more easily recycled.

Abstract: In the process of manufacturing a semiconductor device, a first layer is formed on a substrate, and the first layer and the substrate are etched to form a trench. The inner wall of the trench is thermally oxidized. On the substrate, including inside the trench, is deposited a first conductive film having a thickness equal to or larger than one half of the width of the trench. The first conductive film on the first layer is removed by chemical mechanical polishing such that the first conductive film remains in only the trench. The height of the first conductive film in the trench is adjusted to be lower than a surface of the substrate by anisotropically etching the first conductive film. An insulating film is deposited on the substrate by chemical vapor deposition to cover an upper surface of the first conductive film in the trench. The insulating film is flattened by chemical mechanical polishing, and the first layer is removed.

Abstract: Resin laminate mat is produced by laminating an outer layer comprising a transparent base resin and highly luminant particles dispersed in the transparent resin, and a back layer made of a colored resin. Back layer is composed of upper layer containing a coloring agent and lower layer containing a filler. Preferably, the transparent base resin of the outer layer is mainly composed of a linear low-density polyethylene resin, while the back layer is mainly composed of a mixture of a linear low-density polyethylene resin and a low-density polyethylene resin.

Abstract: First active region and second and third active regions are defined in a semiconductor substrate within a memory cell area and a logic circuit area, respectively. First to third MOS transistors are formed in the first to third active regions, respectively. As viewed from above, the length of the first and second active regions along the gate width is not greater than the length of the third active region along the gate width. In the isolation insulation film, the upper surface of a peripheral portion provided around the first active region is positioned below the upper surface thereof, and the upper surface of a peripheral portion provided around the second active region is positioned below the upper surface thereof. A gate electrode is formed on the upper surfaces of the first to third active regions and the side surfaces of the first and second active regions.

Abstract: A fabric having a unique combination of stain resistance, fluid barrier properties, aesthetic characteristics and drape ability is described, and a method of making such fabrics. The fabric includes a fabric substrate that has been treated with a low surface energy stain resist compound on at least one of its surfaces, and one or more layers secured to the other of its surfaces, with the layers providing the fabric with the unique combination of characteristics. In addition, the fabric is desirably provided with flame resisting and ultraviolet resisting characteristics, to enable it to be used as a seating material for transportation vehicles. Methods for making the fabric are also described.