Patents by Inventor Masato Ishizaki

Masato Ishizaki has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20220151060
    Abstract: A terminal substrate includes a signal terminal disposed on a terminal surface of an insulation ceramic layer. An insulation resin layer of a flexible substrate includes a first surface facing the terminal surface, and a second surface on an opposite side of the first surface. A first signal pad disposed on the first surface is joined to the signal terminal. A first penetration conductive part penetrates the insulation resin layer from the first signal pad. A first signal line is disposed on the second surface. A second penetration conductive part penetrates the insulation resin layer from the first signal line. A second signal line is disposed on the first surface. A third penetration conductive part penetrates the insulation resin layer from the second signal line. A second signal pad is disposed on the second surface.
    Type: Application
    Filed: August 24, 2021
    Publication date: May 12, 2022
    Applicants: NGK Electronics Devices, Inc., NGK Insulators, Ltd., Fujitsu Optical Components Limited
    Inventors: Noboru KUBO, Masato ISHIZAKI, Kento TAKAHASHI
  • Patent number: 11319212
    Abstract: This disclosure is to make it possible to easily stabilize a chlorosilane polymer while preventing a solid chlorosilane polymer from being generated. Disclosed is a method for stabilizing a chlorosilane polymer generated secondarily in a step of a chemical vapor deposition method using chlorosilane-based gas, the method including: a step of bringing alcohol into contact with the chlorosilane polymer, degrading the chlorosilane polymer to alkoxide, hydrogen chloride and hydrogen, and diluting the degraded alkoxide with the alcohol; and a step of performing hydrolysis for the alkoxide.
    Type: Grant
    Filed: February 22, 2019
    Date of Patent: May 3, 2022
    Assignee: IHI Corporation
    Inventors: Yasutomo Tanaka, Yuuta Ootsuka, Wataru Kubota, Masato Ishizaki, Kozue Akazaki
  • Patent number: 11178762
    Abstract: A connection structure for a wiring substrate and a flexible substrate including a wiring substrate and a flexible substrate, in which the wiring substrate includes an insulating member, conductor layer, and ground layer, the flexible substrate includes an insulating sheet and metal film, and the metal film includes a signal line pad joined to the conductor layer via a joining material when viewed from the back surface of the flexible substrate. When viewed from behind the flexible substrate, there is an overlap region where the signal line pad and conductor layer overlap. In a cross-section when the overlap region is cut in a direction perpendicular to a signal transmission direction, in a case where a width of the signal line pad including the overlap region is W, and a width of the conductor layer including the overlap region is W0, the connection structure satisfies W0<W.
    Type: Grant
    Filed: March 3, 2020
    Date of Patent: November 16, 2021
    Assignees: NGK Electronics Devices, Inc., NGK Insulators, Ltd.
    Inventors: Takashi Kawamura, Masato Ishizaki, Naoki Gotou
  • Publication number: 20210221744
    Abstract: A ceramic matrix composite of the present disclosure includes a fiber substrate including a silicon carbide fiber bundle, and a silicon carbide film formed on a surface of each silicon carbide fiber of the silicon carbide fiber bundle, in which a ratio of an average film thickness D2 to an average film thickness Di is 1.0 to 1.3, the average film thickness Di being an average film thickness of the silicon carbide film formed on a surface of the silicon carbide fiber in an outer layer of the silicon carbide fiber bundle, and the average film thickness D2 being an average film thickness of the silicon carbide film formed on a surface of the silicon carbide fiber in an inner layer, which is positioned inside the outer layer, of the silicon carbide fiber bundle.
    Type: Application
    Filed: June 7, 2019
    Publication date: July 22, 2021
    Applicant: IHI Corporation
    Inventors: Yuuta OOTSUKA, Masato ISHIZAKI, Yasutomo TANAKA, Hisato INOUE, Wataru KUBOTA, Izumi MATSUKURA
  • Publication number: 20210078910
    Abstract: A production method for a composite material, which includes a porous substrate and a silicon carbide film formed on a surface of a material forming the porous substrate, includes causing a silicon source containing a silicon atom, a chlorine source containing a chlorine atom, and a carbon source containing a carbon atom to react with each other to form the silicon carbide film on the surface of the material forming the porous substrate.
    Type: Application
    Filed: November 30, 2020
    Publication date: March 18, 2021
    Applicant: IHI Corporation
    Inventors: Yuuta OOTSUKA, Yasutomo TANAKA, Hisato INOUE, Wataru KUBOTA, Masato ISHIZAKI, Yasuyuki FUKUSHIMA, Izumi MATSUKURA
  • Publication number: 20200214130
    Abstract: A connection structure for a wiring substrate and a flexible substrate including a wiring substrate and a flexible substrate, in which the wiring substrate includes an insulating member, conductor layer, and ground layer, the flexible substrate includes an insulating sheet and metal film, and the metal film includes a signal line pad joined to the conductor layer via a joining material when viewed from the back surface of the flexible substrate. When viewed from behind the flexible substrate, there is an overlap region where the signal line pad and conductor layer overlap. In a cross-section when the overlap region is cut in a direction perpendicular to a signal transmission direction, in a case where a width of the signal line pad including the overlap region is W, and a width of the conductor layer including the overlap region is W0, the connection structure satisfies W0<W.
    Type: Application
    Filed: March 3, 2020
    Publication date: July 2, 2020
    Applicants: NGK Electronics Devices, Inc., NGK Insulators, Ltd.
    Inventors: Takashi KAWAMURA, Masato ISHIZAKI, Naoki GOTOU
  • Patent number: 10507414
    Abstract: A reheating collection device for a gas phase process is provided with a container elongated in an axial direction along an axis to define a chamber, an inflow path and an exhaust path respectively in communication with the chamber and apart in the axial direction from each other, and a heater heating the chamber between the inflow path and the exhaust path.
    Type: Grant
    Filed: January 4, 2019
    Date of Patent: December 17, 2019
    Assignee: IHI Corporation
    Inventors: Yuuta Ootsuka, Yasutomo Tanaka, Wataru Kubota, Masato Ishizaki
  • Publication number: 20190256362
    Abstract: This disclosure is to make it possible to easily stabilize a chlorosilane polymer while preventing a solid chlorosilane polymer from being generated. Disclosed is a method for stabilizing a chlorosilane polymer generated secondarily in a step of a chemical vapor deposition method using chlorosilane-based gas, the method including: a step of bringing alcohol into contact with the chlorosilane polymer, degrading the chlorosilane polymer to alkoxide, hydrogen chloride and hydrogen, and diluting the degraded alkoxide with the alcohol; and a step of performing hydrolysis for the alkoxide.
    Type: Application
    Filed: February 22, 2019
    Publication date: August 22, 2019
    Applicant: IHI Corporation
    Inventors: Yasutomo TANAKA, Yuuta OOTSUKA, Wataru KUBOTA, Masato ISHIZAKI, Kozue AKAZAKI
  • Publication number: 20190134545
    Abstract: A reheating collection device for a gas phase process is provided with a container elongated in an axial direction along an axis to define a chamber, an inflow path and an exhaust path respectively in communication with the chamber and apart in the axial direction from each other, and a heater heating the chamber between the inflow path and the exhaust path.
    Type: Application
    Filed: January 4, 2019
    Publication date: May 9, 2019
    Applicant: IHI Corporation
    Inventors: Yuuta OOTSUKA, Yasutomo TANAKA, Wataru KUBOTA, Masato ISHIZAKI
  • Patent number: 10221104
    Abstract: A mixed gas containing a precursor gas, an additive gas and a carrier gas is supplied to a preform stored in an electric furnace, and silicon carbide is deposited by chemical vapor deposition or chemical vapor phase impregnation to form a film. The preform includes multiple fiber bundles, and the fiber bundles include multiple fibers. This heat-resistant composite material includes a ceramic fiber preform impregnated with silicon carbide, and producing the composite material involves a step in which silicon carbide is deposited between the fibers to integrate the fibers which configure the fiber bundles, and a step in which silicon carbide is deposited between the fiber bundles to integrate the fiber bundles. Hereby, uniformity of embedding and growth rate of the silicon carbide film are both attained.
    Type: Grant
    Filed: May 26, 2016
    Date of Patent: March 5, 2019
    Assignees: IHI CORPORATION, THE UNIVERSITY OF TOKYO
    Inventors: Takeshi Nakamura, Masato Ishizaki, Kozue Hotozuka, Yasuyuki Fukushima, Yukihiro Shimogaki, Takeshi Momose, Hidetoshi Sugiura, Kohei Shima, Yuichi Funato
  • Publication number: 20180104862
    Abstract: A fiber reinforced composite member molding apparatus comprises a pair of mold parts which are brought nearer to and away from each other, and in a mold clamping state, clamp laminated sheets of prepreg formed of woven fiber fabric impregnated with resin, and heat sources for heating the resin in the prepreg through the pair of mold parts, wherein the two mold parts each comprise a base mold and a design mold which is detachably attached to the base mold and brought into contact with the prepreg, wherein the design molds of the mold parts are made of a metal lower in thermal expansion rate than the base molds. The mold parts having such split structure can reduce the burden on operators handling replacement of the mold parts, and also can suppress, during heating for molding, the influence of thermal expansion of the mold parts upon a to-be-molded fiber reinforced composite member.
    Type: Application
    Filed: December 18, 2017
    Publication date: April 19, 2018
    Applicant: IHI Corporation
    Inventors: Tsutomu Murakami, Akira Kobiki, Masato Ishizaki
  • Publication number: 20180093398
    Abstract: In a fiber reinforced composite member molding apparatus comprising a lower mold having a cavity, an upper mold having a core which, in a mold clamping state, engages with the cavity in the lower mold and thereby clamps layered prepreg, and heat sources for heating the layered prepreg through the lower mold and the upper mold, and adapted to mold a fiber reinforced composite member from the layered prepreg by applying pressure while heating resin in the layered prepreg between the lower mold and the upper mold by the heat sources, the lower mold is equipped with a cavity heat-escape prevention portion and the upper mold is equipped with a core heat-escape prevention portion. During heating for molding, escape of heat from the periphery of the cavity of the upper mold and the periphery of the core of the lower mold can be prevented, which allows a fiber reinforced composite member to be molded with almost no defects such as wrinkles.
    Type: Application
    Filed: December 6, 2017
    Publication date: April 5, 2018
    Applicant: IHI CORPORATION
    Inventors: Masato ISHIZAKI, Akira KOBIKI, Tsutomu MURAKAMI
  • Patent number: 9822445
    Abstract: By using chemical vapor deposition or chemical vapor infiltration, silicon carbide is deposited on a preform 100 accommodated in a reaction furnace 11 for film formation, and the amount of additive gas added to raw material gas and carrier gas to be supplied to the reactive furnace 11 is used to control the growth rate and filling uniformity at film formation of silicon carbide. When the film formation of silicon carbide follows a first-order reaction, the amount of added additive gas is used to control the sticking probability of the film-forming species. When the film formation of silicon carbide follows a Langmuir-Hinshelwood rate formula, the amount of added additive gas is used to make a control so that a zero-order reaction region of the Langmuir-Hinshelwood rate formula is used.
    Type: Grant
    Filed: February 12, 2015
    Date of Patent: November 21, 2017
    Assignees: IHI Corporation, The University of Tokyo
    Inventors: Takeshi Nakamura, Masato Ishizaki, Kenji Fuchigami, Kozue Hotozuka, Yukihiro Shimogaki, Takeshi Momose, Yasuyuki Fukushima, Noboru Sato, Yuichi Funato, Hidetoshi Sugiura
  • Publication number: 20160297716
    Abstract: A mixed gas containing a precursor gas, an additive gas and a carrier gas is supplied to a preform stored in an electric furnace, and silicon carbide is deposited by chemical vapor deposition or chemical vapor phase impregnation to form a film. The preform includes multiple fiber bundles, and the fiber bundles include multiple fibers. This heat-resistant composite material includes a ceramic fiber preform impregnated with silicon carbide, and producing the composite material involves a step in which silicon carbide is deposited between the fibers to integrate the fibers which configure the fiber bundles, and a step in which silicon carbide is deposited between the fiber bundles to integrate the fiber bundles. Hereby, uniformity of embedding and growth rate of the silicon carbide film are both attained.
    Type: Application
    Filed: May 26, 2016
    Publication date: October 13, 2016
    Applicants: IHI Corporation, The University of Tokyo
    Inventors: Takeshi NAKAMURA, Masato ISHIZAKI, Kozue HOTOZUKA, Yasuyuki FUKUSHIMA, Yukihiro SHIMOGAKI, Takeshi MOMOSE, Hidetoshi SUGIURA, Kohei SHIMA, Yuichi FUNATO
  • Publication number: 20150152547
    Abstract: By using chemical vapor deposition or chemical vapor infiltration, silicon carbide is deposited on a preform 100 accommodated in a reaction furnace 11 for film formation, and the amount of additive gas added to raw material gas and carrier gas to be supplied to the reactive furnace 11 is used to control the growth rate and filling uniformity at film formation of silicon carbide. When the film formation of silicon carbide follows a first-order reaction, the amount of added additive gas is used to control the sticking probability of the film-forming species. When the film formation of silicon carbide follows a Langmuir-Hinshelwood rate formula, the amount of added additive gas is used to make a control so that a zero-order reaction region of the Langmuir-Hinshelwood rate formula is used.
    Type: Application
    Filed: February 12, 2015
    Publication date: June 4, 2015
    Applicants: IHI Corporation, The University of Tokyo
    Inventors: Takeshi NAKAMURA, Masato ISHIZAKI, Kenji FUCHIGAMI, Kozue HOTOZUKA, Yukihiro SHIMOGAKI, Takeshi MOMOSE, Yasuyuki FUKUSHIMA, Noboru SATO, Yuichi FUNATO, Hidetoshi SUGIURA
  • Patent number: 5104633
    Abstract: A method and apparatus for producing or manufacturing a high purity metallic silicon takes a process for generating silicon monoxide by causing reaction between a silicon dioxide containing material and molten state metallic silicon. The silicon monoxide thus generated is sucked for reduction by means of a reducing agent including a carbon containing material and a silicon containing material.
    Type: Grant
    Filed: December 18, 1989
    Date of Patent: April 14, 1992
    Assignees: Kawasaki Steel Corporation, Technical Research Division, Nippon Sheet Glass Co., Ltd.
    Inventors: Yasuhiko Sakaguchi, Fukuo Aratani, Kazuhiro Uchino, Mitsugi Yoshiyagawa, Kunio Miyata, Masato Ishizaki, Tetsuro Kawahara
  • Patent number: D809575
    Type: Grant
    Filed: October 1, 2015
    Date of Patent: February 6, 2018
    Assignee: IHI CORPORATION
    Inventors: Masato Ishizaki, Tsutomu Murakami, Akira Kobiki
  • Patent number: D833489
    Type: Grant
    Filed: May 30, 2017
    Date of Patent: November 13, 2018
    Assignee: IHI CORPORATION
    Inventors: Masato Ishizaki, Tsutomu Murakami, Akira Kobiki
  • Patent number: D834624
    Type: Grant
    Filed: May 30, 2017
    Date of Patent: November 27, 2018
    Assignee: IHI CORPORATION
    Inventors: Masato Ishizaki, Tsutomu Murakami, Akira Kobiki
  • Patent number: D839326
    Type: Grant
    Filed: May 30, 2017
    Date of Patent: January 29, 2019
    Assignee: IHI CORPORATION
    Inventors: Masato Ishizaki, Tsutomu Murakami, Akira Kobiki