Abstract: A rotating electric machine according to the present disclosure is a rotating electric machine including a stator and a rotor, in which the rotor includes a plurality of permanent magnets arranged in a circumferential direction of a rotation axis and a plurality of protrusions arranged in the circumferential direction, the stator includes a plurality of teeth, an armature winding wound around the plurality of teeth, and a field winding wound around the plurality of teeth, a field pole is formed in the plurality of protrusions by energization to the field winding and the plurality of permanent magnets, the plurality of permanent magnets and the plurality of teeth are alternately arranged at intervals in the circumferential direction to form the field pole, all the permanent magnets have the same polarity, wherein, |Pa?Pf|?1, |Pr?Pf|?1, and |Pa?Pr|?1, and Pr is even.

Abstract: According to one embodiment, a memory device includes a first conductive layer, a second conductive layer, a first insulating layer and a first layer. The first conductive layer includes a first metal capable of forming a compound with silicon. The second conductive layer includes at least one selected from a group consisting of tungsten, molybdenum, platinum, tungsten nitride, molybdenum nitride, and titanium nitride. The first insulating layer is provided between the first conductive layer and the second conductive layer. The first layer is provided between the first insulating layer and the second conductive layer. The first layer includes silicon.

Abstract: According to one embodiment, a memory device includes a first conductive layer, a second conductive layer, a first insulating layer and a first layer. The first conductive layer includes a first metal capable of forming a compound with silicon. The second conductive layer includes at least one selected from a group consisting of tungsten, molybdenum, platinum, tungsten nitride, molybdenum nitride, and titanium nitride. The first insulating layer is provided between the first conductive layer and the second conductive layer. The first layer is provided between the first insulating layer and the second conductive layer. The first layer includes silicon.

Abstract: A damping device includes a first member to be fixed to one of the horizontal members and protruding toward the other horizontal member, a second member to be fixed to the other horizontal member having a flexural rigidity smaller than the flexural rigidity of the one horizontal member and protruding toward the one horizontal member, and attenuation means coupled to the First member and to the second member. The attenuation means is provided closer to the other horizontal member.

Abstract: A memory device includes a first electrode, a second electrode, a third electrode, a first variable resistance layer between the first electrode and the third electrode, and a second variable resistance layer between the second electrode and the third electrode. The first, second, and third electrodes, and the first and second variable resistance layers are formed of materials that cause the first variable resistance layer to transition from a high resistance state to a low resistance state when a voltage is applied across the first and second electrodes and maintain the high resistance state when the voltage is cut off, and cause the second variable resistance layer to transition from a high resistance state to a low resistance state when the voltage is applied across the first and second electrodes and transition from the high resistance state to the low resistance state when the voltage is cut off.

Abstract: It is made possible to provide an insulating film that can reduce the leakage current. An insulating film includes: an amorphous oxide dielectric film containing a metal, hydrogen, and nitrogen. The nitrogen amount [N] and the hydrogen amount [H] in the oxide dielectric film satisfy the following relationship: {[N]?[H]}/2?1.0×1021 cm?3.

Abstract: It is made possible to provide an insulating film that can reduce the leakage current. An insulating film includes: an amorphous oxide dielectric film containing a metal, hydrogen, and nitrogen. The nitrogen amount [N] and the hydrogen amount [H] in the oxide dielectric film satisfy the following relationship: {[N]?[H]}/2?1.0×1021 cm?3.

Abstract: It is made possible to provide an insulating film that can reduce the leakage current. An insulating film includes: an amorphous oxide dielectric film containing a metal, hydrogen, and nitrogen. The nitrogen amount [N] and the hydrogen amount [H] in the oxide dielectric film satisfy the following relationship: {[N]—[H]}/2?1.0×1021 cm?3.

Abstract: A power converting apparatus includes a first inverter circuit including a high-voltage first DC voltage source and operated at a low frequency using Si IGBTs having a high withstand voltage exceeding 1000 V and a second inverter circuit including a low-voltage capacitor operated by high-frequency PWM using SiC MOSFETs having a low withstand voltage, wherein an AC side of the first inverter circuit is connected in series to an AC side of the second inverter circuit. The power converting apparatus outputs AC power having a prescribed voltage waveform obtained from the sum of voltages generated by the first and second inverter circuits.

Abstract: According to one embodiment, nonvolatile memory device includes a semiconductor layer, a conductive layer and a resistance change layer. The semiconductor layer has an impurity concentration less than 1×1019 cm?3. The resistance change layer is provided between the semiconductor layer and the conductive layer. The resistance change layer includes a fixed charge. The resistance change layer is reversibly transitionable between a first state and a second state by at least one selected from a current supplied via the semiconductor layer and the conductive layer and a voltage applied via the semiconductor layer and the conductive layer. A resistance of the resistance change layer in the second state is higher than a resistance of the resistance change layer in the first state.

Abstract: According to an embodiment, a semiconductor device includes first and second memristors. The first memristor includes a first electrode made of a first material, a second electrode made of a second material, and a first resistive switching film arranged between the first and second electrodes. The first resistive switching film is connected to both the first and second electrodes. The second memristor includes a third electrode made of a third material, a fourth electrode made of the second material, and a second resistive switching film arranged between the third and fourth electrodes. The second resistive switching film is connected to both the third and fourth electrodes. The work function of the first material is smaller than that of the second material. The work function of the third material is larger than that of the second material.

Abstract: A semiconductor device includes a semiconductor substrate having a semiconductor layer, a gate electrode, a source region, a drain region, an element separation insulating film layer and a wiring. The gate electrode include a laminated structure having a gate insulating film formed on the semiconductor layer, a metal or a metallic compound formed on the gate insulating film and a polycrystalline silicon layer formed on the metal or metallic compound. The source region and drain region are formed on a surface portion of the semiconductor substrate and sandwich the gate electrode therebetween. The element separation insulating film layer surrounds the semiconductor layer. The wiring is in contact with the metal or metallic compound of the gate electrode.

Abstract: A memory device includes a first electrode, a second electrode, a third electrode, a first variable resistance layer between the first electrode and the third electrode, and a second variable resistance layer between the second electrode and the third electrode. The first, second, and third electrodes, and the first and second variable resistance layers are formed of materials that cause the first variable resistance layer to transition from a high resistance state to a low resistance state when a voltage is applied across the first and second electrodes and maintain the high resistance state when the voltage is cut off, and cause the second variable resistance layer to transition from a high resistance state to a low resistance state when the voltage is applied across the first and second electrodes and transition from the high resistance state to the low resistance state when the voltage is cut off.

Abstract: According to an embodiment, a semiconductor device includes first and second memristors. The first memristor includes a first electrode made of a first material, a second electrode made of a second material, and a first resistive switching film arranged between the first and second electrodes. The first resistive switching film is connected to both the first and second electrodes. The second memristor includes a third electrode made of a third material, a fourth electrode made of the second material, and a second resistive switching film arranged between the third and fourth electrodes. The second resistive switching film is connected to both the third and fourth electrodes. The work function of the first material is smaller than that of the second material. The work function of the third material is larger than that of the second material.

Abstract: It is made possible to provide a method for manufacturing a semiconductor device that includes CMISs each having a low threshold voltage Vth and a Ni-FUSI/SiON or high-k gate insulating film structure. The method comprises: forming a p-type semiconductor region and an n-type semiconductor region insulated from each other in a substrate; forming a first and second gate insulating films on the p-type and n-type semiconductor regions, respectively; forming a first nickel silicide having a composition of Ni/Si<31/12 above the first gate insulating film, and a second nickel silicide having a composition of Ni/Si?31/12 on the second gate insulating film; and segregating aluminum at an interface between the first nickel silicide and the first gate insulating film by diffusing aluminum through the first nickel silicide.

Abstract: A semiconductor device includes a semiconductor substrate, an nMISFET formed on the substrate, the nMISFET including a first dielectric formed on the substrate and a first metal gate electrode formed on the first dielectric and formed of one metal element selected from Ti, Zr, Hf, Ta, Sc, Y, a lanthanoide and actinide series and of one selected from boride, silicide and germanide compounds of the one metal element, and a pMISFET formed on the substrate, the pMISFET including a second dielectric formed on the substrate and a second metal gate electrode formed on the second dielectric and made of the same material as that of the first metal gate electrode, at least a portion of the second dielectric facing the second metal gate electrode being made of an insulating material different from that of at least a portion of the first dielectric facing the first metal gate electrode.

Abstract: A semiconductor device includes a semiconductor substrate, an nMISFET formed on the substrate, the nMISFET including a first dielectric formed on the substrate and a first metal gate electrode formed on the first dielectric and formed of one metal element selected from Ti, Zr, Hf, Ta, Sc, Y, a lanthanoide and actinide series and of one selected from boride, silicide and germanide compounds of the one metal element, and a pMISFET formed on the substrate, the pMISFET including a second dielectric formed on the substrate and a second metal gate electrode formed on the second dielectric and made of the same material as that of the first metal gate electrode, at least a portion of the second dielectric facing the second metal gate electrode being made of an insulating material different from that of at least a portion of the first dielectric facing the first metal gate electrode.