Abstract: Disclosed is a semiconductor device comprising a substrate, an insulating film formed above the substrate and containing a metal, Si, N and O, the insulating film containing metal-N bonds larger than the sum total of metal-metal bonds and metal-Si bonds, and an electrode formed above the insulating film.

Abstract: A power control apparatus has a generator power converting circuit (3) for converting power from a generator (2) to DC power to output the DC power to a direct-current line (8), a battery (4), chopper circuits (5, 7) for converting power from a capacitor (6) to DC power to output the DC power to the direct-current line (8), a motor-driving circuit (9) for driving an electric motor (10) based on the power supplied by way of the direct-current line (8), and a power control circuit (23) for controlling the generator power converting circuit (3) and the chopper circuits (5, 7) in such a manner that the voltage of the DC line (8) is maintained at a substantially constant level irrespective of variation of demanded power from a load (11), whereby power just enough for the demanded power from the load (11) is supplied.

Abstract: There is disclosed a MIS field effect transistor, comprising a silicon substrate, an insulating film formed over the silicon substrate and containing silicon and at least one of nitrogen and oxygen, a metal oxynitride film formed on the insulating film and containing at least one kind of metal atom selected from the group consisting of zirconium, hafnium and a lanthanoide series metal, the metal oxynitride film containing nitrogen atom not bonding with the metal atom without metal-nitrogen bond at the density of higher than 1019/cm3, and a gate electrode formed on the metal oxynitride film.

Abstract: There is disclosed a MIS field effect transistor, comprising a silicon substrate, an insulating film formed over the silicon substrate and containing silicon and at least one of nitrogen and oxygen, a metal oxynitride film formed on the insulating film and containing at least one kind of metal atom selected from the group consisting of zirconium, hafnium and a lanthanide series metal, the metal oxynitride film containing nitrogen atom not bonding with the metal atom without metal-nitrogen bond at the density of higher than 1019/cm3, and a gate electrode formed on the metal oxynitride film.

Abstract: There is disclosed a method of manufacturing a semiconductor device, wherein a thin film containing a metal and capable of bonding with oxygen is deposited on a silicon substrate, a metal oxide film is formed on the thin film, and the thin film is oxidized by heat treatment to form a gate insulating film comprising the oxidized thin film and the metal oxide film.

Abstract: There is provided a transparent conductive film comprising: a substrate(A), and a transparent conductive layer(B) formed on one main surface of the substrate(A), wherein the layer(B) mainly comprises indium, tin and oxygen atoms, and a resistance variation rate of the layer(B) is 5% or less after 60% to 70% of the surface area of the layer(B) is covered with a 28 wt % aqueous ammonia solution for five hours.

Abstract: The present invention is intended to provide a semiconductor device having a gate electrode free from increasing of resistance of the gate electrode, from decreasing of capacitance of the insulation film due to depletion, and from penetrating of impurity. The semiconductor device comprises a silicon layer, a gate insulating film formed on the silicon layer, a metal boron compound layer formed on the gate insulating film, and a gate electrode formed on the metal boron compound layer and containing at least silicon.

Abstract: There is disclosed a MIS field effect transistor, comprising a silicon substrate, an insulating film formed over the silicon substrate and containing silicon and at least one of nitrogen and oxygen, a metal oxynitride film formed on the insulating film and containing at least one kind of metal atom selected from the group consisting of zirconium, hafnium and a lanthanoide series metal, the metal oxynitride film containing nitrogen atom not bonding with the metal atom without metal-nitrogen bond at the density of higher than 1019/cm3, and a gate electrode formed on the metal oxynitride film.

Abstract: There is disclosed a method of manufacturing a semiconductor device, wherein a thin film containing a metal and capable of bonding with oxygen is deposited on a silicon substrate, a metal oxide film is formed on the thin film, and the thin film is oxidized by heat treatment to form a gate insulating film comprising the oxidized thin film and the metal oxide film.

Abstract: Disclosed is a semiconductor device comprising a semiconductor substrate and a circuit element using an insulating film formed on the semiconductor substrate. The insulating film contains a silicon compound containing at least one element selected from the group consisting of an oxygen and a nitrogen, and a metal compound containing a metal other than silicon and at least one element selected from the group consisting of an oxygen and a nitrogen. Nano-crystals are formed in the insulating film. The size of the nano-crystal is small enough to permit observation of a polycrystalline ring as a diffraction image when an electron beam having a beam diameter of the nanometer order is incident in parallel to the insulating film surface.

Abstract: An induction motor control device includes a power conversion circuit, a current sensor, a current component calculation circuit for calculating first and second current components, a magnetic flux command calculation circuit for calculating a magnetic flux command value such that the amplitude ratio between a squared value of the first current component and a squared value of the second current component takes a preset value, a voltage component calculation circuit for calculating a primary voltage component command value, and a primary voltage component command calculation circuit. The current component calculation circuit calculates first and second current components in phase and 90° out of phase with the primary voltage component command value, respectively.

Abstract: Transparent laminates which have high transparency and, moreover, excellent electromagnetic shielding characteristics and near-infrared cutting-off characteristics, and optical filters for displays using these transparent laminates. These transparent laminates are formed by laminating a transparent electrically conductive layer composed of high-refractive-index transparent film layers (B) and metal film layers (C) consisting of silver or a silver-containing alloy on one major surface of a transparent substrate (A) in such a way that a repeating unit comprising a combination of one high-refractive-index transparent film layer (B) and one metal film layer (C) is laminated three times or more, and further laminating one high-refractive-index transparent film layer (B) thereon. The transparent laminate has a sheet resistance of not greater than 3 .OMEGA./sq., a visible light transmittance of not less than 50%, and a light transmittance of not greater than 20% in a wavelength region longer than 820 nm.

Abstract: A method of controlling a pulse width modulation or PWM inverter apparatus that generates and controls AC output voltages with PWM control, comprises the steps of: generating a reference voltage vector for setting the AC output voltages; and changing timing of the generation of the AC output voltages during a predetermined period of time determined by a carrier signal at predetermined intervals determined by the carrier signal without changing the pulse widths of the AC output voltages determined by the PWM control so that a vector representing the averages of instantaneous amplitudes of the AC output voltages for a predetermined period of time agrees with the reference voltage vector, and so that the spectra of high-frequency components of each of the AC output voltages are spread out over a predetermined wide range of frequencies.

Abstract: A transparent heater panel having a transparent substrate, a transparent conductive layer formed on the transparent substrate, electrodes formed on the transparent conductive layer and a transparent protective layer formed on the transparent conductive layer except portions reserved for the electrodes with the end faces of the transparent conductive layer corrosion treated with a transparent protective plastic member or an anticorrosive; and a process for producing the same. The heater panel has improved durability against pollutants, environmental durability, reliability and light transmission.

Abstract: A positioning control apparatus for accurately positioning a tool and workpiece and for reducing the vibration related to positioning. The system comprises a machining table fitted with a workpiece and designed to be movable on a bed. A first detector detects the acceleration of the machining table in a moving direction, and a second detector detects the acceleration in the moving direction of a tool fitted to a column that also is coupled with the bed. The outputs of the first and second detectors are used to suppress the relative vibration of the workpiece fitted to the machining table and the tool fitted to the column in the moving direction.

Abstract: A position controller for controlling an electric motor comprises first position control circuit which provides first speed signal, second position control circuit which controls a mechanical system simulating circuit and provides second speed signal, an adder which adds the first and second speed signals to provide third speed control signal, first speed control circuit which receives the third speed signal and provides first torque signal, second speed control circuit which provides second torque signal, third speed control circuit which provides third torque signal, and an adder which adds the first, second and third torque signals to provide final torque signal. The output torque of the electric motor is controlled so that the output torque coincides with a torque represented by the final torque signal.

Abstract: A three-level three-phase inverter apparatus operating on a proposed pulse width modulation method whereby good output voltages are obtained free of the effects of the minimum pulse width constraints of switching devices and whereby the neutral point voltage is controlled. The apparatus has a modulation circuit containing a microprocessor and a voltage vector selection circuit. The microprocessor divides one period into six segments of 60 degrees each. Each segment is divided into four triangular regions each determined by the vertexes of voltage vectors. An output voltage command is given as a vector. Once the segment and region to which a given vector belongs are determined, the voltage vectors corresponding to that region and the order in which to output these vectors are derived from the predetermined vector combinations and their output orders stored beforehand in the voltage vector selection circuit.

Abstract: A DC-DC converter for outputting dc voltage whose peak value is higher than an input dc voltage value and high-frequency voltage corresponding to a command value is superimposed. An insulated switching power supply 27 and a series regulator 26 are connected in parallel to a dc power supply 1. The insulated switching power supply 27 generates output voltage V.sub.2 having a certain level, and the series regulator 26, output voltage V.sub.1 whose voltage varies depending on a command value (command voltage varying at a high frequency). Then, the sum of the output voltages V.sub.1 and V.sub.2 is fed to the load 9.

Abstract: An error current component which becomes zero when an actual value of a primary flux coincides with a set value inducted by a product of an exciting current command and a primary self-inductance by detecting a primary current of an inductance motor, is inducted by an error current component processing circuit. A primary resistance compensation circuit processes a compensation amount of a primary resistance compensation amount. And a compensation voltage processing circuit processes a compensation voltage which directs the error current component to zero. A rotating speed of the induction motor can be controlled in a stable state even though a value of primary resistance of the induction motor is varied by temperature. Further, inadequate torque and excess current can be avoided.

Abstract: A method for preparing an amorphous silicon solar cell is disclosed which comprises forming on a substrate, in the following order, a first electrode, a first conductive film, a thin first substantially intrinsic film, a thicker second substantially intrinsic film, a second conductive film and a second electrode.the method being characterized in that at least the thicker second substantially intrinsic film is formed by the sequential steps of:(a) depositing a semiconductor film containing 20 atom % or less of bound hydrogen and/or bound deuterium to a thickness of from 5 to 1000 .ANG., and then (b) modifying the deposited film, the sequence of steps being repeated multiple times.The solar cell formed by the above-mentioned method is particularly excellent in long-term stability.