Abstract: The metal plate includes a plurality of pits located on the surface of the metal plate. The manufacturing method for a metal plate for use in manufacturing of a deposition mask includes an inspection step of determining a quality of the metal plate based on a sum of volumes of a plurality of pits located at a portion of the surface of the metal plate.

Abstract: A metal plate includes a surface including a longitudinal direction of the metal plate and a width direction orthogonal to the longitudinal direction. A surface reflectance by regular reflection of a light is 8% or more and 25% or less. The surface reflectance is measured when the light is incident on the surface at an angle of 45°±0.2°. The light is in at least one plane orthogonal to the surface.

Abstract: A deposition mask includes an effective part in which a plurality of openings are provided, and an outer frame part surrounding the effective part. The effective part includes an outer peripheral area that is adjacent to the outer frame part, and a central area which is surrounded by the outer peripheral area and has a thickness larger than a thickness of the outer peripheral area.

Abstract: A method for producing a vapor deposition mask capable of satisfying both enhancement in definition and reduction in weight even when a size increased, a method for producing a vapor deposition mask device capable of aligning the vapor deposition mask to a frame with high precision, and a method for producing an organic semiconductor element capable of producing an organic semiconductor element with high definition are provided. A metal mask provided with a slit, and a resin mask that is positioned on a front surface of the metal mask and has openings corresponding to a pattern to be produced by vapor deposition arranged by lengthwise and crosswise in a plurality of rows, are stacked.

Abstract: A deposition mask includes: a first mask having an opening formed therein; and a second mask superposed on the first mask and having a plurality of through-holes formed therein, the through-hole having a planar dimension smaller than a planar dimension of the opening; wherein: the deposition mask has a plurality of joints that join the second mask and the first mask to each other; the plurality of joints are arranged along an outer edge of the second mask; and a notch is formed at a position in the outer edge of the second mask, the position corresponding to a space between the adjacent two joints.

Abstract: The metal plate includes a plurality of pits located on the surface of the metal plate. The manufacturing method for a metal plate for use in manufacturing of a deposition mask includes an inspection step of determining a quality of the metal plate based on a sum of volumes of a plurality of pits located at a portion of the surface of the metal plate.

Abstract: The metal plate includes a plurality of pits located on the surface of the metal plate. The manufacturing method for a metal plate for use in manufacturing of a deposition mask includes an inspection step of determining a quality of the metal plate based on a sum of volumes of a plurality of pits located at a portion of the surface of the metal plate.

Abstract: A vapor deposition mask device includes a vapor deposition mask having an effective region in which a plurality of first through holes is disposed, and a frame attached to the vapor deposition mask. The vapor deposition mask device includes a plurality of joint portions that joins the vapor deposition mask and the frame to each other. The plurality of joint portions is arranged along the outer edge of the vapor deposition mask. A notch is formed at a position corresponding to between two adjacent joint portions in the outer edge of the vapor deposition mask.

Abstract: A metal plate used for manufacturing a deposition mask has a thickness of equal to or less than 30 ?m. An average cross-sectional area of the crystals grains on a cross section of the metal plate is from 0.5 ?m2 to 50 ?m2. The average cross-sectional area of crystal grains is calculated by analyzing measurement results obtained by an EBSD method, the measuring results being analyzed by an area method under conditions where a portion with a difference in crystal orientation of 5 degrees or more is recognized as a crystal grain boundary.

Abstract: A method for producing a vapor deposition mask capable of satisfying both enhancement in definition and reduction in weight even when a size increased, a method for producing a vapor deposition mask device capable of aligning the vapor deposition mask to a frame with high precision, and a method for producing an organic semiconductor element capable of producing an organic semiconductor element with high definition are provided. A metal mask provided with a slit, and a resin mask that is positioned on a front surface of the metal mask and has openings corresponding to a pattern to be produced by vapor deposition arranged by lengthwise and crosswise in a plurality of rows, are stacked.

Abstract: A method for producing a vapor deposition mask capable of satisfying both enhancement in definition and reduction in weight even when a size increased, a method for producing a vapor deposition mask device capable of aligning the vapor deposition mask to a frame with high precision, and a method for producing an organic semiconductor element capable of producing an organic semiconductor element with high definition are provided. A metal mask provided with a slit, and a resin mask that is positioned on a front surface of the metal mask and has openings corresponding to a pattern to be produced by vapor deposition arranged by lengthwise and crosswise in a plurality of rows, are stacked.

Abstract: A method for producing a multiple-surface imposition vapor deposition mask that enhances definition and reduces weight even when a size is increased. Each of multiple masks in an open space in a frame is configured by a metal mask having a slit, and a resin mask that is positioned on a front surface of the metal mask and has openings corresponding to a pattern to be produced by vapor deposition arranged by lengthwise and crosswise in a plurality of rows. In formation of the plurality of masks, after each of the metal masks and a resin film material for producing the resin mask are attached to the frame, the resin film material is processed, and the openings corresponding to the pattern to be produced by vapor deposition are formed in a plurality of rows lengthwise and crosswise, whereby the multiple-surface imposition vapor deposition mask of the above described configuration is produced.

Abstract: A deposition mask includes an effective part in which a plurality of openings are provided, and an outer frame part surrounding the effective part. The effective part includes an outer peripheral area that is adjacent to the outer frame part, and a central area which is surrounded by the outer peripheral area and has a thickness larger than a thickness of the outer peripheral area.

Abstract: A metal plate used for manufacturing a deposition mask has a thickness of equal to or less than 30 ?m. An average cross-sectional area of the crystals grains on a cross section of the metal plate is from 0.5 ?m2 to 50 ?m2. The average cross-sectional area of crystal grains is calculated by analyzing measurement results obtained by an EBSD method, the measuring results being analyzed by an area method under conditions where a portion with a difference in crystal orientation of 5 degrees or more is recognized as a crystal grain boundary.

Abstract: A deposition mask includes: a first mask having an opening formed therein; and a second mask superposed on the first mask and having a plurality of through-holes formed therein, the through-hole having a planar dimension smaller than a planar dimension of the opening; wherein: the deposition mask has a plurality of joints that join the second mask and the first mask to each other; the plurality of joints are arranged along an outer edge of the second mask; and a notch is formed at a position in the outer edge of the second mask, the position corresponding to a space between the adjacent two joints.

Abstract: The metal plate includes a plurality of pits located on the surface of the metal plate. The manufacturing method for a metal plate for use in manufacturing of a deposition mask includes an inspection step of determining a quality of the metal plate based on a sum of volumes of a plurality of pits located at a portion of the surface of the metal plate.

Abstract: A metal plate includes a surface including a longitudinal direction of the metal plate and a width direction orthogonal to the longitudinal direction. A surface reflectance by regular reflection of a light is 8% or more and 25% or less. The surface reflectance is measured when the light is incident on the surface at an angle of 45°±0.2°. The light is in at least one plane orthogonal to the surface.

Abstract: A metal plate used for manufacturing a deposition mask has a thickness of equal to or less than 30 ?m. An average cross-sectional area of the crystals grains on a cross section of the metal plate is from 0.5 ?m2 to 50 ?m2. The average cross-sectional area of crystal grains is calculated by analyzing measurement results obtained by an EBSD method, the measuring results being analyzed by an area method under conditions where a portion with a difference in crystal orientation of 5 degrees or more is recognized as a crystal grain boundary.

Abstract: A vapor deposition mask device includes a vapor deposition mask having an effective region in which a plurality of first through holes is disposed, and a frame attached to the vapor deposition mask. The vapor deposition mask device includes a plurality of joint portions that joins the vapor deposition mask and the frame to each other. The plurality of joint portions is arranged along the outer edge of the vapor deposition mask. A notch is formed at a position corresponding to between two adjacent joint portions in the outer edge of the vapor deposition mask.

Abstract: A method for producing a vapor deposition mask capable of satisfying both enhancement in definition and reduction in weight even when a size increased, a method for producing a vapor deposition mask device capable of aligning the vapor deposition mask to a frame with high precision, and a method for producing an organic semiconductor element capable of producing an organic semiconductor element with high definition are provided. A metal mask provided with a slit, and a resin mask that is positioned on a front surface of the metal mask and has openings corresponding to a pattern to be produced by vapor deposition arranged by lengthwise and crosswise in a plurality of rows, are stacked.