Abstract: A semiconductor device of the present invention includes a semiconductor substrate (10) having a bit line (14), an ONO film (16) that is provided on the semiconductor substrate (10) and has an opening (46), an interlayer insulating film (30) that is provided on the ONO film (16) and has a contact hole (40) connected to the bit line (14) and provided in the opening (46), and an insulation layer (44) provided between and separating the ONO film (16) and the contact hole (40). In forming the contact hole (40) in the interlayer insulating film (30), the ONO film (16) being provided separately from the contact hole (40) prevents the damage region from being created in the ONO film (16). This makes it possible to suppress charge loss from the trapping layer due to the damage region and provide a highly reliable semiconductor device.

Abstract: A semiconductor device includes a substrate having a pair of first diffused regions, and a gate including an oxide film provided on the substrate, and a charge storage layer provided on the oxide film, the charge storage layer being an electrical insulator capable of storing charges in bit areas. The oxide film has first portions related to the bit areas and a second portion that is located between the bit areas and is thicker than the first potions. The first portions serve as tunneling oxide portions, while the second portion allows reduced tunneling.